Vertical NPN/PNP Transistor (bjt503)
The bjt503 model provides a detailed description of a vertical integrated NPN and PNP transistor. It is described in the Philips Bipolar Modelbook (Dec.95) as TN/TNS and TP/TPS level 503.
The NPN is also described in Nat.Lab. Unclassified Report Nr. 006/94 as Mextram Bipolar Transistor Model. Information on how to obtain this document can be found on Source Link by searching for Philips.
(c) Philips Electronics N.V. 1993,1996
In addition to the model description a level parameter is added. Via the level parameter the user can switch between Philips Bipolar Modelbook (Dec.95) and Philips Bipolar Modelbook (Dec.94).
The imax parameter is used to aid convergence and to prevent numerical overflow. The junction characteristics of the transistor are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor and a warning is printed.
The descriptions of the operating point derivatives are given for the NPN type. For the PNP type the terminal voltage in the descriptions has to be exchanged. E.g.:
NPN: gx = dIn/dVb2e1
PNP: gx = dIn/dVe1b2
This device is supported within altergroups.
This device is dynamically loaded from the shared object /vols/mmsimP4_t1b_006/ws/ling/ling_2110_isr3_mif/spectre_dev/tools.lnx86/cmi/lib/64bit/5.0.doc/libphilips_sh.so
Sample Instance Statement
q4 (vcc net3 minus) npn_mod region=fwd m=1 mult=1
Sample Model Statement:
model npn_mod bjt503 type=npn level=2 exmod=1 is=1e-14 bf=85 ik=95e-6 rbc=50 cje=0.352e-12
Instance Syntax
Name c b e [s] ModelName parameter=value ...
Instance Parameters
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area=1
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Area factor.
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mult=1
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Alias of area factor.
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m=1
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Multiplication factor.
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region=fwd
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Estimated DC operating region, used as a convergence aid. Possible values are off, fwd, rev, and sat.
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trise=0.0 K
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Temperature rise from ambient.
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lv1=1
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lv4=1
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Model Syntax
model modelName bjt503 parameter=value ...
Model Parameters
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type=npn
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Transistor type. Possible values are npn, npnv, pnp, and pnpv.
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level=2.0
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Transistor Level. Possible values are 1 (Philips Bipolar Modelbook Dec.94) or 2 (Philips Bipolar Modelbook Dec.95).
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exmod=0
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Flag for extended modeling of the reverse current gain.
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exphi=0
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Flag for distributed high frequency effects.
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exavl=1
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Flag for extended modeling of avalanche currents.
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is=5.0e-17 A
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Collector-emitter saturation current.
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bf=140.0 A/A
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Ideal forward current gain.
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xibi=0.0
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Fraction of ideal base current that belongs to the sidewall.
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ibf=2.0e-14 A
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Saturation current of the non-ideal forward base current.
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vlf=0.5 V
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Cross-over voltage of the non-ideal forward base current.
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ik=15.0e-3 A
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High-injection knee current.
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bri=16.0 A/A
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Ideal reverse current gain.
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ibr=8.0e-15 A
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Saturation current of the non-ideal reverse base current.
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vlr=0.5 V
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Cross-over voltage of the non-ideal reverse base current.
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xext=0.5
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Part of Iex, Qex, Qtex and Isub that depends on Vbc1.
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qbo=1.2e-12 Coul
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Base charge at zero bias.
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eta=4.0
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Factor of the built-in field of the base.
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avl=50.0
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Weak avalanche parameter.
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efi=0.7
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Electric field intercept (with exavl=1.
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ihc=3.0e-3 A
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Critical current for hot carriers.
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rcc=25.0 Ω
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Constant part of the collector resistance.
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rcv=750.0 Ω
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Resistance of the unmodulated epilayer.
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scrcv=1000.0 Ω
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Space charge resistance of the epilayer.
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sfh=0.6
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Current spreading factor epilayer.
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rbc=50.0 Ω
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Constant part of the base resistance.
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rbv=100.0 Ω
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Variable part of the base resistance at zero bias.
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re=2.0 Ω
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Emitter series resistance.
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taune=3.0e-10 s
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Minimum delay time of neutral and emitter charge.
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mtau=1.18
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Non-ideality factor of the neutral and emitter charge.
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cje=2.5e-13 F
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Zero bias emitter-base depletion capacitance.
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vde=0.9 V
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Emitter-base diffusion voltage.
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pe=0.33
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Emitter-base grading coefficient.
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xcje=0.5
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Fraction of the e-b depletion cap. that belongs to the sidewall.
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cjc=1.3e-13 F
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Zero bias collector-base depletion capacitance.
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vdc=0.6 V
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Collector-base diffusion voltage.
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pc=0.4
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Collector-base grading coefficient variable part.
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xp=0.2
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Constant part of cjc.
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mc=0.5
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Collector current modulation coefficient.
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xcjc=0.1
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Fraction of the collector-base depletion cap. under the emitter area.
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tref (C)
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Reference temperature. Default set by option tnom.
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tnom (C)
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Alias of tref. Default set by option tnom.
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tr (C)
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Alias of tref. Default set by option tnom.
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dta=0.0 K
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Difference of the device temperature to the ambient temperature. It served as the default value of instance trise.
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trise=0.0 K
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Alias of dta.
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vge=1.01 V
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Band-gap voltage of the emitter.
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vgb=1.18 V
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Band-gap voltage of the base.
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vgc=1.205 V
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Band-gap voltage of the collector.
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vgj=1.1 V
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Band-gap voltage recombination emitter-base junction.
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vi=0.04 V
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Ionization voltage base dope.
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na=3.0e17 cm-3
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Maximum base dope concentration.
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er=2.0e-3
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Temperature coefficient of vlf and vlr.
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ab=1.35
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Temperature coefficient resistivity base.
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aepi=2.15
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Temperature coefficient resistivity of the epilayer.
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aex=1.0
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Temperature coefficient resistivity of the extrinsic base.
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ac=0.4
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Temperature coefficient resistivity of the buried layer.
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kf=2.0e-16
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Flickernoise coefficient ideal base current.
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kfn=2.0e-16
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Flickernoise coefficient non-ideal base current.
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af=1.0
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Flickernoise exponent.
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iss=6.0e-16 A
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Base-substrate saturation current.
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iks=5.0e-6 A
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Knee current of the substrate.
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cjs=1.0e-12 F
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Zero bias collector-substrate depletion capacitance.
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vds=0.5 V
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Collector-substrate diffusion voltage.
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ps=0.33
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Collector-substrate grading coefficient.
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vgs=1.15 V
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Band-gap voltage of the substrate.
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as=2.15
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For a closed buried layer: as=ac. For an open buried layer: as=aepi.
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imax=1.0 A
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Explosion current.
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vers=503
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Version mextrem.
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compatible=spectre
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Encourage device equations to be compatible with a foreign simulator. This option does not affect input syntax. Possible values are spectre, spice2, spice3, cdsspice, and spiceplus.
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subs=1
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Operating-Point Parameters
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ib (A)
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Base current.
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ic (A)
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Collector current.
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ie (A)
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Emitter current.
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is (A)
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Substrate current.
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vbe (V)
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Base-emitter voltage.
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vbc (V)
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Base-collector voltage.
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vce (V)
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Collector-emitter voltage.
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vsc (V)
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Substrate voltage.
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re (Ω)
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Constant emitter resistance.
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rcc (Ω)
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Constant collector resistance.
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rbc (Ω)
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Constant part of base resistance.
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betadc (A/A)
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DC current gain.
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pwr (W)
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Power.
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Vb1e1 (V)
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Internal voltage.
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Vb2e1 (V)
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Internal voltage.
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Vb2c1 (V)
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Internal voltage.
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Vb2c2 (V)
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Internal voltage.
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Vb1b2 (V)
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Internal voltage.
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Vb1c1 (V)
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Internal voltage.
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Vbc1 (V)
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Internal voltage.
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in (A)
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Main current.
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ic1c2 (A)
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Variable collector resistance current.
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ib1 (A)
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Bulk component of ideal base current.
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ib1s (A)
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Sidewall component of ideal base current.
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ib2 (A)
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Non-ideal base current.
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iavl (A)
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Weak avalanche current.
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ib1b2 (A)
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Variable base resistance current.
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ib3 (A)
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Non-ideal reverse base current.
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iex (A)
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Internal extrinsic base current.
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isub (A)
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Internal base-substrate current.
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isf (A)
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Substrate-collector current.
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xiex (A)
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External extrinsic base current.
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Xisub (A)
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External base-substrate current.
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gx (S)
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dIn/dVb2e1.
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gy (S)
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dIn/dVb2c2.
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gz (S)
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dIn/dVb2c1.
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grcvy (S)
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dIc1c2/dVb2c2.
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grcvz (S)
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dIc1c2/dVb2c1.
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gpi (S)
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Conductance floor base-emitter junction: dIb1/dVb2e1 + dIb2/dVb2e1.
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sgpi (S)
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Conductance sidewall base-emitter junction: dIb1S/dVb1e1.
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gmux (S)
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Dependence avalanche multiplication on internal b-e junction: -dIavl/dVb2e1.
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gmu (S)
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Dependence avalanche multiplication on internal b-c junction: -dIavl/dVb2c2.
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gmuz (S)
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Dependence avalanche multiplication on external b-c junction:-dIavl/dVb2c1.
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grbv (S)
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dIb1b2/dVb1b2.
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grbvx (S)
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Emitter Early-effect on Ib1b2: dIb1b2/dVb2e1.
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grbvy (S)
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Internal collector Early-effect on Ib1b2: dIb1b2/dVb2c2.
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grbvz (S)
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External collector Early effect on Ib1b2: dIb1b2/dVb2c1.
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gmuex (S)
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Conductance floor extrinsic b-c junction: dIex/dVb1c1 + dIsub/dVb1c1 + dIb3/dVb1c1.
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xgmuex (S)
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Conductance sidewall extrinsic b-c junction: dXIex/dVbc1 + dXIsub/dVbc1.
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gsub (S)
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Conductance s-c junction: dIsf/dVsc1.
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gpnp (S)
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Transconductance floor extrinsic PNP transistor: dIsub/dVb1c1.
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xgpnp (S)
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Transconductance sidewall extrinsic PNP transistor: dXIsub/dVbc1.
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cbex (F)
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Capacitance floor b-e junction: dQte/dVb2e1 + dQbe/dVb2e1 + dQn/dVb2e1.
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cbey (F)
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Internal collector Early-effect on Qbe: dQbe/dVb2c2.
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cbez (F)
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External collector Early-effect on Qbe: dQbe/dVb2c1.
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scte (F)
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Dependence of QteS on internal b-e junction: dQteS/dVb2e1.
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cbcx (F)
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Emitter Early-effect on Qbc: dQbc/dVb2e1.
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cbcy (F)
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Capacitance intrinsic b-c junction: dQtc/dVb2c2 + dQbc/dVb2c2 + dQepi/dVb2c2.
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cbcz (F)
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Collector Early-effect on Qtc: dQtc/dVb2c1 + dQbc/dVb2c1 + dQepi/dVb2c1.
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cb1b2 (F)
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Capacitance AC current crowding: dQb1b2/dVb1b2 = Cb.
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cb1b2x (F)
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Dependence of Qb1b2 on internal b-e junction voltage: dQb1b2/dVb2e1.
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cbcex (F)
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Capacitance floor extrinsic b-c junction: dQtex/dVb1c1 + dQex/dVb1c1.
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xcbcex (F)
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Capacitance sidewall extrinsic b-c junction: dXQtex/dVbc1 + dXQex/dVbc1.
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cts (F)
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Capacitance s-c junction: dQtex/dVb1c1 + dQex/dVb1c1.
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lv6 (A)
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lv7 (S)
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lv8 (A)
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lv9 (A)
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lv10 (A/A)
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lv11 (A/A)
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lv14 (Ω)
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lv15 (Ω)
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lv16 (S)
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lx0 (V)
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lx1 (V)
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lx2 (A)
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lx3 (A)
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cbe (F)
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Cbe.
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cbc (F)
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Cbc.
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csc (F)
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Csc.
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Related Topics
Philips Models
Compact Bipolar-Transistor Model (bjt504)
Compact Bipolar-Transistor Model (bjt504t)
Compact Bipolar-Transistor Model (bjt505)
Compact Bipolar-Transistor Model (bjt505t)
Compact Bipolar-Transistor Model (bjtd504)
Compact Bipolar-Transistor Model (bjtd504t)
Compact Bipolar-Transistor Model (bjtd505t)
Compact Bipolar-Transistor Model (bjtd3500)
Compact Bipolar-Transistor Model (bjtd3500t)
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