I-V Model

Threshold Voltage

(-5)

where

(-6)

(-7)

(-8)

(-9)

(-10)

(-11)

(-12)

(-13)

(-14)

Effective Vgs-Vthc

(-15)

(-16)

(-17)

Mobility

For Mobmod=1,

(-18)

For Mobmod=2,

(-19)

For Mobmod=3,

(-20)

Drain Saturation Voltage

For R_ds > 0 or λ ≠ 1,

(-21)

(-22)

(-23)

(-24)

(-25)

For R_ds = 0 and λ = 1,

(-26)

(-27)

(-28)

Effective Vds

(-29)

Drain Current Expression

(-30)

(-31)

(-32)

(-33)

(-34)

(-35)

(-36)

(-37)

(-38)

Substrate Current

(-39)

(-40)

Junction Saturation Current

is always overrides js. If you give js but not is, the saturation currents are calculated from js and the source and drain areas.

Polysilicon Depletion Effect

(-41)

(-42)

(-43)

(-44)

(-45)

(-46)

Effective Channel Length and Width

(-47)

where

(-48)

(-49)

(-50)

(-51)

(-52)

(-53)

(-54)

Drain/Source Resistance

(-55)

Temperature Effects

(-56)

(-57)

(-58)

(-59)

(-60)

(-61)

(-62)

Related Topics

BSIM3v3 Level-11 Model (bsim3v3)

LOD Model

Capacitance Model

Nonquasi-static (NQS) Model

SPICE3 Junction Diode Model

Return to top