LOD Model

The following diagram displays the LOD instance geometry parameters sa and sb.

(-252)

(-253)

(-254)

(-255)

For irregular LOD device,

(-256)

(-257)

Stress Effect

(-258)

(-259)

where μ_effo, υ_sato are low field mobility, saturation velocity at SA_ref, SB_ref.

(-260)

(-261)

(-262)

(-263)

Well Proximity Effect

(-264)

(-265)

(-266)

SC is defined as the distance to a single well edge used in calculations of SCA, SCB, and SCC when layout information is not available. If SCA, SCB, and SCC are not given, their estimation is as follows:

(-267)

(-268)

(-269)

Related Topics

BSIM3v3 Level-11 Model (bsim3v3)

I-V Model

SPICE3 Junction Diode Model

Nonquasi-static (NQS) Model

Differences between BSIM3v3 Subversions

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