BSIM4 Version 6

GISL and GIDL Leakage Module

Four new parameters have been added.

Junction Diode I-V

In BSIM4.5.0, the junction diode current due to the trap-assisted tunneling current in space-charge region has same set of parameters for both source and drain junctions.

Gate Tunneling Current

In BSIM4.5.0, the gate tunneling current in the overlapping S/D diffusion regions (IGS / IGD) share the same set of parameters for both source and drain ( DLCIG, AIGSD, BIGSD, CIGSD).

In BSIM4.6.0, the parameters for IGS and IGD are separate.

I_GS : DLCIG, AIGS, BIGS, CIGS
I_GD : DLCIGD, AIGD, BIGD, CIGD

Mobility Model

The coulomb scattering term has been modified in BSIM4.6.0 release to avoid the possibility of non-monotonic drain current trend with respect to gate voltage.

mobMod=0

(-258)