BSIM4 Version 6.2

Width Dependent TAT Model

New Model Parameter

A new model parameter JTWEFF is added to describe the TAT current width dependence.

Change in Equation for Temperature Dependence of Junction Diode IV

Side Source Diode 0

(-269)

where

(-270)

(-271)

(-272)

where

(-273)

(-274)

(-275)

High K Mobility

New Model Parameters

The following new model parameters are added:

• LUCS
• LUCSTE
• PUCS
• PUCSTE
• UCS
• UCSTE
• WUCS
• WUCSTE

The UCS parameter is temperature dependent as given below:

(-276)

New Mobility Model for High K Material

A new mobility model mobMod=3 is added to enhance the modeling of coulomb scattering in high-k and metal gate transistors.

New Temperature Mode (tempMod = 3) for Mobility

tempMod=3 only affects the mobility. Other parameters, such as Rs and Rd are the same as in tempMod=2.

Note the following:

• For tempMod=1, tempMod=2 and tempMod=3:

(-277)

and

(-278)

• However, when tempMod=3:

(-279)

(-280)

(-281)

(-282)

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