|
1
|
level=103
|
Model level.
|
|
2
|
type=n
|
Channel type parameter, n=NMOS p=PMOS. Possible values are n and p.
|
|
3
|
tr=value of tnom C
|
|
|
|
|
Nominal (reference) temperature.
|
|
4
|
tref=value of tnom C
|
|
|
|
Nominal (reference) temperature.
|
|
5
|
swnqs=0
|
Flag for NQS, 0, off, 1, 2, 3, 5, or 9, number of collocation points.
|
|
6
|
swgeo=1
|
Flag for geometrical model, 0: local, 1: global, 2: binning.
|
|
7
|
swigate=0
|
Flag for gate current, 0,turn off IG.
|
|
8
|
swimpact=0
|
Flag for impact ionization current, 0,turn off II.
|
|
9
|
swgidl=0
|
Flag for GIDL current, 0,turn off IGIDL.
|
|
10
|
swjuncap=0
|
Flag for juncap, 0,turn off juncap.
|
|
11
|
swjunasym=0
|
Flag for asymmetric junctions; 0,symmetric, 1,asymmetric.
|
|
12
|
swnud=0
|
Flag for NUD-effect. Possible values are:
0: off
1: on
2: on+CV-correction.
|
|
13
|
swedge=0.0
|
Flag for drain current of edge transistors. Possible values are 0=off and 1=on.
|
|
14
|
swdelvtac=0
|
Flag for separate capacitance calculation. Possible values are 0: off and 1: on.
|
|
15
|
swign=1.0
|
Flag for induced gate noise. Possible values are 0: off and 1: on.
|
|
16
|
swfix=0
|
Flag for fixes introduced in PSP103.8.2.
|
|
17
|
qmc=1.0
|
Quantum-mechanical correction factor.
|
|
18
|
version=103.0
|
This parameter accepts only a real number values, for example, use 103.11 for the 103.1.1 version. The available versions are 103.0, 103.1, 103.11 (103.1.1), 103.2, 103.3, 103.4, 103.5, 103.6, and 103.7.
|
|
19
|
minr=0.0
|
Minimum resistance, in order to be compatible with the original model, set its default to 0.0.
|
|
20
|
mvt=0.0
|
DCmatch parameter.
|
|
21
|
mvto=0.0
|
DCmatch parameter.
|
|
22
|
mbe=0.0
|
DCmatch parameter.
|
|
23
|
mbeo=0.0
|
DCmatch parameter.
|
|
24
|
vfb=-1.0 V
|
Flat band voltage at TR.
|
|
25
|
stvfb=5.0e-4 V/K
|
Temperature dependence of VFB.
|
|
26
|
tox=2.0e-09 m
|
Gate oxide thickness.
|
|
27
|
epsrox=3.9
|
Relative permittivity of gate dielectric.
|
|
28
|
neff=5.0e+23 m-3
|
Effective substrate doping.
|
|
29
|
facneffac=1.0
|
Pre-factor for effective substrate doping in separate charge calculation.
|
|
30
|
gfacnud=1.0
|
Bodyfactor change due to NUD-effect.
|
|
31
|
vsbnud=0.0 V
|
Lower Vsb value for NUD-effect.
|
|
32
|
dvsbnud=1.0 V
|
Vsb-range for NUD-effect.
|
|
33
|
vnsub=0.0 V
|
Effective doping bias-dependence parameter.
|
|
34
|
nslp=0.05 V
|
Effective doping bias-dependence parameter.
|
|
35
|
dnsub=0.0 V^-1
|
Effective doping bias-dependence parameter.
|
|
36
|
dphib=0.0 V
|
Offset parameter for PHIB.
|
|
37
|
delvtac=0.0 V
|
Offset parameter for PHIB in separate charge calculation.
|
|
38
|
np=1.0e+26 m-3
|
Gate poly-silicon doping.
|
|
39
|
ct=0.0
|
Interface states factor.
|
|
40
|
toxov=2.0e-09 m
|
Overlap oxide thickness.
|
|
41
|
toxovd=2.0e-09 m
|
Overlap oxide thickness for drain side.
|
|
42
|
nov=5.0e+25 m-3
|
Effective doping of overlap region.
|
|
43
|
novd=5.0e+25 m-3
|
Effective doping of overlap region for drain side.
|
|
44
|
cf=0.0
|
DIBL parameter.
|
|
45
|
cfb=0.0 V^-1
|
Back bias dependence of CF.
|
|
46
|
betn=7e-2 m2/V/s
|
Channel aspect ratio times zero-field mobility.
|
|
47
|
stbet=1.0
|
Temperature dependence of BETN.
|
|
48
|
mue=0.5 m/V
|
Mobility reduction coefficient at TR.
|
|
49
|
stmue=0.0
|
Temperature dependence of MUE.
|
|
50
|
themu=1.5
|
Mobility reduction exponent at TR.
|
|
51
|
stthemu=1.5
|
Temperature dependence of THEMU.
|
|
52
|
cs=0.0
|
Coulomb scattering parameter at TR.
|
|
53
|
stcs=0.0
|
Temperature dependence of CS.
|
|
54
|
xcor=0.0 V^-1
|
Non-universality factor.
|
|
55
|
stxcor=0.0
|
Temperature dependence of XCOR.
|
|
56
|
feta=1.0
|
Effective field parameter.
|
|
57
|
rs=30 Ω
|
Series resistance at TR.
|
|
58
|
strs=1.0
|
Temperature dependence of RS.
|
|
59
|
rsb=0.0 V^-1
|
Back-bias dependence of series resistance.
|
|
60
|
rsg=0.0 V^-1
|
Gate-bias dependence of series resistance.
|
|
61
|
thesat=1.0 V^-1
|
Velocity saturation parameter at TR.
|
|
62
|
stthesat=1.0
|
Temperature dependence of THESAT.
|
|
63
|
thesatb=0.0 V^-1
|
Back-bias dependence of velocity saturation.
|
|
64
|
thesatg=0.0 V^-1
|
Gate-bias dependence of velocity saturation.
|
|
65
|
ax=3.0
|
Linear/saturation transition factor.
|
|
66
|
alp=0.01
|
CLM pre-factor.
|
|
67
|
alp1=0.00 V
|
CLM enhancement factor above threshold.
|
|
68
|
alp2=0.00 V^-1
|
CLM enhancement factor below threshold.
|
|
69
|
vp=0.05 V
|
CLM logarithm dependence factor.
|
|
70
|
a1=1.0
|
Impact-ionization pre-factor.
|
|
71
|
a2=10.0 V
|
Impact-ionization exponent at TR.
|
|
72
|
sta2=0.0 V
|
Temperature dependence of A2.
|
|
73
|
a3=1.0
|
Saturation-voltage dependence of impact-ionization.
|
|
74
|
a4=0.0 V^-0.5
|
Back-bias dependence of impact-ionization.
|
|
75
|
gco=0.0
|
Gate tunneling energy adjustment.
|
|
76
|
iginv=0.0 A
|
Gate channel current pre-factor.
|
|
77
|
igov=0.0 A
|
Gate overlap current pre-factor.
|
|
78
|
igovd=0.0 A
|
Gate overlap current pre-factor for drain side.
|
|
79
|
stig=2.0
|
Temperature dependence of IGINV and IGOV.
|
|
80
|
gc2=0.375
|
Gate current slope factor.
|
|
81
|
gc3=0.063
|
Gate current curvature factor.
|
|
82
|
chib=3.1 V
|
Tunneling barrier height.
|
|
83
|
agidl=0.0 A/V3
|
GIDL pre-factor.
|
|
84
|
agidld=0.0 A/V3
|
GIDL pre-factor for drain side.
|
|
85
|
bgidl=41.0 V
|
GIDL probability factor at TR.
|
|
86
|
bgidld=41.0 V
|
GIDL probability factor at TR for drain side.
|
|
87
|
stbgidl=0.0 V/K
|
Temperature dependence of BGIDL.
|
|
88
|
stbgidld=0.0 V/K
|
Temperature dependence of BGIDL for drain side.
|
|
89
|
cgidl=0.0
|
Back-bias dependence of GIDL.
|
|
90
|
cgidld=0.0
|
Back-bias dependence of GIDL for drain side.
|
|
91
|
cox=1.0e-14 F
|
Oxide capacitance for intrinsic channel.
|
|
92
|
cgov=1.0e-15 F
|
Oxide capacitance for gate-drain/source overlap.
|
|
93
|
cgovd=1.0e-15 F
|
Oxide capacitance for gate-drain overlap.
|
|
94
|
cgbov=0.0 F
|
Oxide capacitance for gate-bulk overlap.
|
|
95
|
cfr=0.0 F
|
Outer fringe capacitance.
|
|
96
|
cfrd=0.0 F
|
Outer fringe capacitance for drain side.
|
|
97
|
fcgovacc=0.0
|
Factor for overlap capacitances in accumulation regime.
|
|
98
|
fcgovaccd=0.0
|
Factor for overlap capacitances in accumulation regime for drain side.
|
|
99
|
cgovaccg=1.0
|
Gate voltage dependence parameter of overlap capacitances in accumulation regime.
|
|
100
|
cinr=0.0 F
|
Inner fringe capacitance.
|
|
101
|
cinrd=0.0 F
|
Inner fringe capacitance for drain side.
|
|
102
|
dvfbinr=0.0 V
|
Flat-band voltage offset of inner fringe capacitances.
|
|
103
|
fcinrdep=0.3
|
Bias dependence parameter of inner fringe capacitances in depletion regime.
|
|
104
|
fcinracc=0.5
|
Bias dependence parameter of inner fringe capacitances in accumulation regime.
|
|
105
|
axinr=0.5
|
Accumulation/depletion transition factor of inner fringe capacitances.
|
|
106
|
fnt=1.0
|
Thermal noise coefficient.
|
|
107
|
FNTEXC=0.0
|
Excess noise coefficient.
|
|
108
|
nfa=8.0e+22 V^-1/m4
|
|
|
|
|
First coefficient of flicker noise.
|
|
109
|
nfb=3.0e+07 V^-1/m2
|
|
|
|
|
Second coefficient of flicker noise.
|
|
110
|
nfc=0.0 V^-1
|
Third coefficient of flicker noise.
|
|
111
|
ef=1.0
|
Flicker noise frequency exponent.
|
|
112
|
munqs=1.0
|
Relative mobility for NQS modelling.
|
|
113
|
rg=0.0 Ω
|
Gate resistance.
|
|
114
|
rse=0.0 Ω
|
External source resistance.
|
|
115
|
rde=0.0 Ω
|
External drain resistance.
|
|
116
|
rbulk=0.0 Ω
|
Bulk resistance between node BP and BI.
|
|
117
|
rwell=0.0 Ω
|
Well resistance between node BI and B.
|
|
118
|
rjuns=0.0 Ω
|
Source-side bulk resistance between node BI and BS.
|
|
119
|
rjund=0.0 Ω
|
Drain-side bulk resistance between node BI and BD.
|
|
120
|
rth=0.0 K/W
|
Thermal resistance.
|
|
121
|
cth=0.0 J/K
|
Thermal capacitance.
|
|
122
|
strth=0.0
|
Temperature sensitivity of RTH.
|
|
123
|
povfb=-1 V
|
Coefficient for the geometry-independent part of VFB.
|
|
124
|
plvfb=0.0 V
|
Coefficient for the length dependence of VFB.
|
|
125
|
pwvfb=0.0 V
|
Coefficient for the width dependence of VFB.
|
|
126
|
plwvfb=0.0 V
|
Coefficient for the length times width dependence of VFB.
|
|
127
|
postvfb=0.0005 V/K
|
|
|
|
|
Coefficient for the geometry-independent part of STVFB.
|
|
128
|
plstvfb=0.0 V/K
|
Coefficient for the length dependence of STVFB.
|
|
129
|
pwstvfb=0.0 V/K
|
Coefficient for the width dependence of STVFB.
|
|
130
|
plwstvfb=0.0 V/K
|
Coefficient for the length times width dependence of STVFB.
|
|
131
|
potox=2E-09 m
|
Coefficient for the geometry-independent part of TOX.
|
|
132
|
poepsrox=3.9
|
Coefficient for the geometry-independent part of EPSOX.
|
|
133
|
poneff=5E+23 m-3
|
Coefficient for the geometry-independent part of NEFF.
|
|
134
|
plneff=0.0 m-3
|
Coefficient for the length dependence of NEFF.
|
|
135
|
pwneff=0.0 m-3
|
Coefficient for the width dependence of NEFF.
|
|
136
|
plwneff=0.0 m-3
|
Coefficient for the length times width dependence of NEFF.
|
|
137
|
pofacneffac=1.0
|
Coefficient for the geometry-independent part of FACNEFFAC.
|
|
138
|
plfacneffac=0.0
|
Coefficient for the length dependence of FACNEFFAC.
|
|
139
|
pwfacneffac=0.0
|
Coefficient for the width dependence of FACNEFFAC.
|
|
140
|
plwfacneffac=0.0
|
Coefficient for the length times width dependence of FACNEFFAC.
|
|
141
|
pogfacnud=1.0
|
Coefficient for the geometry-independent part of GFACNUD.
|
|
142
|
plgfacnud=0.0
|
Coefficient for the length dependence of GFACNUD.
|
|
143
|
pwgfacnud=0.0
|
Coefficient for the width dependence of GFACNUD.
|
|
144
|
plwgfacnud=0.0
|
Coefficient for the length times width dependence of GFACNUD.
|
|
145
|
povsbnud=0.0 V
|
Coefficient for the geometry-independent part of VSBNUD.
|
|
146
|
podvsbnud=1.0 V
|
Coefficient for the geometry-independent part of DVSBNUD.
|
|
147
|
povnsub=0 V
|
Coefficient for the geometry-independent part of VNSUB.
|
|
148
|
ponslp=0.05 V
|
Coefficient for the geometry-independent part of NSLP.
|
|
149
|
podnsub=0 V^-1
|
Coefficient for the geometry-independent part of DNSUB.
|
|
150
|
podphib=0 V
|
Coefficient for the geometry-independent part of DPHIB.
|
|
151
|
pldphib=0.0 V
|
Coefficient for the length dependence of DPHIB.
|
|
152
|
pwdphib=0.0 V
|
Coefficient for the width dependence of DPHIB.
|
|
153
|
plwdphib=0.0 V
|
Coefficient for the length times width dependence of DPHIB.
|
|
154
|
podelvtac=0 V
|
Coefficient for the geometry-independent part of DELVTAC.
|
|
155
|
pldelvtac=0.0 V
|
Coefficient for the length dependence of DELVTAC.
|
|
156
|
pwdelvtac=0.0 V
|
Coefficient for the width dependence of DELVTAC.
|
|
157
|
plwdelvtac=0.0 V
|
Coefficient for the length times width dependence of DELVTAC.
|
|
158
|
ponp=1E+26 m-3
|
Coefficient for the geometry-independent part of NP.
|
|
159
|
plnp=0.0 m-3
|
Coefficient for the length dependence of NP.
|
|
160
|
pwnp=0.0 m-3
|
Coefficient for the width dependence of NP.
|
|
161
|
plwnp=0.0 m-3
|
Coefficient for the length times width dependence of NP.
|
|
162
|
poct=0
|
Coefficient for the geometry-independent part of CT.
|
|
163
|
plct=0.0
|
Coefficient for the length dependence of CT.
|
|
164
|
pwct=0.0
|
Coefficient for the width dependence of CT.
|
|
165
|
plwct=0.0
|
Coefficient for the length times width dependence of CT.
|
|
166
|
potoxov=2E-09 m
|
Coefficient for the geometry-independent part of TOXOV.
|
|
167
|
potoxovd=2E-09 m
|
Coefficient for the geometry-independent part of TOXOV for drain side.
|
|
168
|
ponov=5E+25 m-3
|
Coefficient for the geometry-independent part of NOV.
|
|
169
|
plnov=0.0 m-3
|
Coefficient for the length dependence of NOV.
|
|
170
|
pwnov=0.0 m-3
|
Coefficient for the width dependence of NOV.
|
|
171
|
plwnov=0.0 m-3
|
Coefficient for the length times width dependence of NOV.
|
|
172
|
ponovd=5E+25 m-3
|
Coefficient for the geometry-independent part of NOV for drain side.
|
|
173
|
plnovd=0.0 m-3
|
Coefficient for the length dependence of NOV for drain side.
|
|
174
|
pwnovd=0.0 m-3
|
Coefficient for the width dependence of NOV for drain side.
|
|
175
|
plwnovd=0.0 m-3
|
Coefficient for the length times width dependence of NOV for drain side.
|
|
176
|
pocf=0
|
Coefficient for the geometry-independent part of CF.
|
|
177
|
plcf=0.0
|
Coefficient for the length dependence of CF.
|
|
178
|
pwcf=0.0
|
Coefficient for the width dependence of CF.
|
|
179
|
plwcf=0.0
|
Coefficient for the length times width dependence of CF.
|
|
180
|
plcfd=0.0 V^-1
|
Coefficient for the geometry-independent part of CFD.
|
|
181
|
pocfd=0 V^-1
|
Coefficient for the geometry-independent part of CFD.
|
|
182
|
pocfb=0 V^-1
|
Coefficient for the geometry-independent part of CFB.
|
|
183
|
pobetn=0.07 m2/V/s
|
|
|
|
|
Coefficient for the geometry-independent part of BETN.
|
|
184
|
plbetn=0.0 m2/V/s
|
|
|
|
|
Coefficient for the length dependence of BETN.
|
|
185
|
pwbetn=0.0 m2/V/s
|
|
|
|
|
Coefficient for the width dependence of BETN.
|
|
186
|
plwbetn=0.0 m2/V/s
|
|
|
|
|
Coefficient for the length times width dependence of BETN.
|
|
187
|
postbet=1
|
Coefficient for the geometry-independent part of STBET.
|
|
188
|
plstbet=0.0
|
Coefficient for the length dependence of STBET.
|
|
189
|
pwstbet=0.0
|
Coefficient for the width dependence of STBET.
|
|
190
|
plwstbet=0.0
|
Coefficient for the length times width dependence of STBET.
|
|
191
|
pomue=0.5 m/V
|
Coefficient for the geometry-independent part of MUE.
|
|
192
|
plmue=0.0 m/V
|
Coefficient for the length dependence of MUE.
|
|
193
|
pwmue=0.0 m/V
|
Coefficient for the width dependence of MUE.
|
|
194
|
plwmue=0.0 m/V
|
Coefficient for the length times width dependence of MUE.
|
|
195
|
postmue=0
|
Coefficient for the geometry-independent part of STMUE.
|
|
196
|
pothemu=1.5
|
Coefficient for the geometry-independent part of THEMU.
|
|
197
|
postthemu=1.5
|
Coefficient for the geometry-independent part of STTHEMU.
|
|
198
|
pocs=0
|
Coefficient for the geometry-independent part of CS.
|
|
199
|
plcs=0.0
|
Coefficient for the length dependence of CS.
|
|
200
|
pwcs=0.0
|
Coefficient for the width dependence of CS.
|
|
201
|
plwcs=0.0
|
Coefficient for the length times width dependence of CS.
|
|
202
|
postcs=0
|
Coefficient for the geometry-independent part of STCS.
|
|
203
|
poxcor=0 V^-1
|
Coefficient for the geometry-independent part of XCOR.
|
|
204
|
plxcor=0.0 V^-1
|
Coefficient for the length dependence of XCOR.
|
|
205
|
pwxcor=0.0 V^-1
|
Coefficient for the width dependence of XCOR.
|
|
206
|
plwxcor=0.0 V^-1
|
Coefficient for the length times width dependence of XCOR.
|
|
207
|
postxcor=0
|
Coefficient for the geometry-independent part of STXCOR.
|
|
208
|
pofeta=1
|
Coefficient for the geometry-independent part of FETA.
|
|
209
|
pors=30 Ω
|
Coefficient for the geometry-independent part of RS.
|
|
210
|
plrs=0.0 Ω
|
Coefficient for the length dependence of RS.
|
|
211
|
pwrs=0.0 Ω
|
Coefficient for the width dependence of RS.
|
|
212
|
plwrs=0.0 Ω
|
Coefficient for the length times width dependence of RS.
|
|
213
|
postrs=1
|
Coefficient for the geometry-independent part of STRS.
|
|
214
|
porsb=0 V^-1
|
Coefficient for the geometry-independent part of RSB.
|
|
215
|
porsg=0 V^-1
|
Coefficient for the geometry-independent part of RSG.
|
|
216
|
pothesat=1 V^-1
|
Coefficient for the geometry-independent part of THESAT.
|
|
217
|
plthesat=0.0 V^-1
|
Coefficient for the length dependence of THESAT.
|
|
218
|
pwthesat=0.0 V^-1
|
Coefficient for the width dependence of THESAT.
|
|
219
|
plwthesat=0.0 V^-1
|
|
|
|
|
Coefficient for the length times width dependence of THESAT.
|
|
220
|
postthesat=1
|
Coefficient for the geometry-independent part of STTHESAT.
|
|
221
|
plstthesat=0.0
|
Coefficient for the length dependence of STTHESAT.
|
|
222
|
pwstthesat=0.0
|
Coefficient for the width dependence of STTHESAT.
|
|
223
|
plwstthesat=0.0
|
Coefficient for the length times width dependence of STTHESAT.
|
|
224
|
pothesatb=0 V^-1
|
Coefficient for the geometry-independent part of THESATB.
|
|
225
|
plthesatb=0.0 V^-1
|
|
|
|
|
Coefficient for the length dependence of THESATB.
|
|
226
|
pwthesatb=0.0 V^-1
|
|
|
|
|
Coefficient for the width dependence of THESATB.
|
|
227
|
plwthesatb=0.0 V^-1
|
|
|
|
|
Coefficient for the length times width dependence of THESATB.
|
|
228
|
pothesatg=0 V^-1
|
Coefficient for the geometry-independent part of THESATG.
|
|
229
|
plthesatg=0.0 V^-1
|
|
|
|
|
Coefficient for the length dependence of THESATG.
|
|
230
|
pwthesatg=0.0 V^-1
|
|
|
|
|
Coefficient for the width dependence of THESATG.
|
|
231
|
plwthesatg=0.0 V^-1
|
|
|
|
|
Coefficient for the length times width dependence of THESATG.
|
|
232
|
poax=3
|
Coefficient for the geometry-independent part of AX.
|
|
233
|
plax=0.0
|
Coefficient for the length dependence of AX.
|
|
234
|
pwax=0.0
|
Coefficient for the width dependence of AX.
|
|
235
|
plwax=0.0
|
Coefficient for the length times width dependence of AX.
|
|
236
|
poalp=0.01
|
Coefficient for the geometry-independent part of ALP.
|
|
237
|
plalp=0.0
|
Coefficient for the length dependence of ALP.
|
|
238
|
pwalp=0.0
|
Coefficient for the width dependence of ALP.
|
|
239
|
plwalp=0.0
|
Coefficient for the length times width dependence of ALP.
|
|
240
|
poalp1=0 V
|
Coefficient for the geometry-independent part of ALP1.
|
|
241
|
plalp1=0.0 V
|
Coefficient for the length dependence of ALP1.
|
|
242
|
7 pwalp1=0.0 V
|
Coefficient for the width dependence of ALP1.
|
|
243
|
plwalp1=0.0 V
|
Coefficient for the length times width dependence of ALP1.
|
|
244
|
poalp2=0 V^-1
|
Coefficient for the geometry-independent part of ALP2.
|
|
245
|
plalp2=0.0 V^-1
|
Coefficient for the length dependence of ALP2.
|
|
246
|
pwalp2=0.0 V^-1
|
Coefficient for the width dependence of ALP2.
|
|
247
|
plwalp2=0.0 V^-1
|
Coefficient for the length times width dependence of ALP2.
|
|
248
|
povp=0.05 V
|
Coefficient for the geometry-independent part of VP.
|
|
249
|
poa1=1
|
Coefficient for the geometry-independent part of A1.
|
|
250
|
pla1=0.0
|
Coefficient for the length dependence of A1.
|
|
251
|
pwa1=0.0
|
Coefficient for the width dependence of A1.
|
|
252
|
plwa1=0.0
|
Coefficient for the length times width dependence of A1.
|
|
253
|
poa2=10 V
|
Coefficient for the geometry-independent part of A2.
|
|
254
|
posta2=0 V
|
Coefficient for the geometry-independent part of STA2.
|
|
255
|
poa3=1
|
Coefficient for the geometry-independent part of A3.
|
|
256
|
pla3=0.0
|
Coefficient for the length dependence of A3.
|
|
257
|
pwa3=0.0
|
Coefficient for the width dependence of A3.
|
|
258
|
plwa3=0.0
|
Coefficient for the length times width dependence of A3.
|
|
259
|
poa4=0 V^-0.5
|
Coefficient for the geometry-independent part of A4.
|
|
260
|
pla4=0.0 V^-0.5
|
Coefficient for the length dependence of A4.
|
|
261
|
pwa4=0.0 V^-0.5
|
Coefficient for the width dependence of A4.
|
|
262
|
plwa4=0.0 V^-0.5
|
Coefficient for the length times width dependence of A4.
|
|
263
|
pogco=0
|
Coefficient for the geometry-independent part of GCO.
|
|
264
|
poiginv=0 A
|
Coefficient for the geometry-independent part of IGINV.
|
|
265
|
pliginv=0.0 A
|
Coefficient for the length dependence of IGINV.
|
|
266
|
pwiginv=0.0 A
|
Coefficient for the width dependence of IGINV.
|
|
267
|
plwiginv=0.0 A
|
Coefficient for the length times width dependence of IGINV.
|
|
268
|
poigov=0 A
|
Coefficient for the geometry-independent part of IGOV.
|
|
269
|
pligov=0.0 A
|
Coefficient for the length dependence of IGOV.
|
|
270
|
pwigov=0.0 A
|
Coefficient for the width dependence of IGOV.
|
|
271
|
plwigov=0.0 A
|
Coefficient for the length times width dependence of IGOV.
|
|
272
|
poigovd=0 A
|
Coefficient for the geometry-independent part of IGOV for drain side.
|
|
273
|
pligovd=0.0 A
|
Coefficient for the length dependence of IGOV for drain side.
|
|
274
|
pwigovd=0.0 A
|
Coefficient for the width dependence of IGOV for drain side.
|
|
275
|
plwigovd=0.0 A
|
Coefficient for the length times width dependence of IGOV for drain side.
|
|
276
|
postig=2
|
Coefficient for the geometry-independent part of STIG.
|
|
277
|
pogc2=0.375
|
Coefficient for the geometry-independent part of GC2.
|
|
278
|
pogc3=0.063
|
Coefficient for the geometry-independent part of GC3.
|
|
279
|
pochib=3.1 V
|
Coefficient for the geometry-independent part of CHIB.
|
|
280
|
poagidl=0 A/V3
|
Coefficient for the geometry-independent part of AGIDL.
|
|
281
|
plagidl=0.0 A/V3
|
Coefficient for the length dependence of AGIDL.
|
|
282
|
pwagidl=0.0 A/V3
|
Coefficient for the width dependence of AGIDL.
|
|
283
|
plwagidl=0.0 A/V3
|
|
|
|
|
Coefficient for the length times width dependence of AGIDL.
|
|
284
|
poagidld=0 A/V3
|
Coefficient for the geometry-independent part of AGIDL for drain side.
|
|
285
|
plagidld=0.0 A/V3
|
|
|
|
|
Coefficient for the length dependence of AGIDL for drain side.
|
|
286
|
pwagidld=0.0 A/V3
|
|
|
|
|
Coefficient for the width dependence of AGIDL for drain side.
|
|
287
|
plwagidld=0.0 A/V3
|
|
|
|
|
Coefficient for the length times width dependence of AGIDL for drain side.
|
|
288
|
pobgidl=41 V
|
Coefficient for the geometry-independent part of BGIDL.
|
|
289
|
pobgidld=41 V
|
Coefficient for the geometry-independent part of BGIDL for drain side.
|
|
290
|
postbgidl=0 V/K
|
Coefficient for the geometry-independent part of STBGIDL.
|
|
291
|
postbgidld=0 V/K
|
Coefficient for the geometry-independent part of STBGIDL for drain side.
|
|
292
|
pocgidl=0
|
Coefficient for the geometry-independent part of CGIDL.
|
|
293
|
pocgidld=0
|
Coefficient for the geometry-independent part of CGIDL for drain side.
|
|
294
|
pocox=1E-14 F
|
Coefficient for the geometry-independent part of COX.
|
|
295
|
plcox=0.0 F
|
Coefficient for the length dependence of COX.
|
|
296
|
pwcox=0.0 F
|
Coefficient for the width dependence of COX.
|
|
297
|
plwcox=0.0 F
|
Coefficient for the length times width dependence of COX.
|
|
298
|
pocgov=1E-15 F
|
Coefficient for the geometry-independent part of CGOV.
|
|
299
|
plcgov=0.0 F
|
Coefficient for the length dependence of CGOV.
|
|
300
|
pwcgov=0.0 F
|
Coefficient for the width dependence of CGOV.
|
|
301
|
plwcgov=0.0 F
|
Coefficient for the length times width dependence of CGOV.
|
|
302
|
pocgovd=1E-15 F
|
Coefficient for the geometry-independent part of CGOV for drain side.
|
|
303
|
plcgovd=0.0 F
|
Coefficient for the length dependence of CGOV for drain side.
|
|
304
|
pwcgovd=0.0 F
|
Coefficient for the width dependence of CGOV for drain side.
|
|
305
|
plwcgovd=0.0 F
|
Coefficient for the length times width dependence of CGOV for drain side.
|
|
306
|
pocgbov=0 F
|
Coefficient for the geometry-independent part of CGBOV.
|
|
307
|
plcgbov=0.0 F
|
Coefficient for the length dependence of CGBOV.
|
|
308
|
pwcgbov=0.0 F
|
Coefficient for the width dependence of CGBOV.
|
|
309
|
plwcgbov=0.0 F
|
Coefficient for the length times width dependence of CGBOV.
|
|
310
|
pocfr=0 F
|
Coefficient for the geometry-independent part of CFR.
|
|
311
|
plcfr=0.0 F
|
Coefficient for the length dependence of CFR.
|
|
312
|
pwcfr=0.0 F
|
Coefficient for the width dependence of CFR.
|
|
313
|
plwcfr=0.0 F
|
Coefficient for the length times width dependence of CFR.
|
|
314
|
pocfrd=0 F
|
Coefficient for the geometry-independent part of CFR for drain side.
|
|
315
|
plcfrd=0.0 F
|
Coefficient for the length dependence of CFR for drain side.
|
|
316
|
pwcfrd=0.0 F
|
Coefficient for the width dependence of CFR for drain side.
|
|
317
|
plwcfrd=0.0 F
|
Coefficient for the length times width dependence of CFR for drain side.
|
|
318
|
pofcgovacc=0.0
|
Coefficient for the geometry-independent part of FCGOVACC.
|
|
319
|
pofcgovaccd=0.0
|
Coefficient for the geometry-independent part of FCGOVACC for drain side.
|
|
320
|
pocgovaccg=1.0
|
Coefficient for the geometry-independent part of CGOVACCG.
|
|
321
|
pocinr=0.0 F
|
Coefficient for the geometry-independent part of CINR.
|
|
322
|
plcinr=0.0 F
|
Coefficient for the length dependence of CINR.
|
|
323
|
pwcinr=0.0 F
|
Coefficient for the width dependence of CINR.
|
|
324
|
plwcinr=0.0 F
|
Coefficient for the length times width dependence of CINR.
|
|
325
|
pocinrd=0.0 F
|
Coefficient for the geometry-independent part of CINR for drain side.
|
|
326
|
plcinrd=0.0 F
|
Coefficient for the length dependence of CINR for drain side.
|
|
327
|
pwcinrd=0.0 F
|
Coefficient for the width dependence of CINR for drain side.
|
|
328
|
plwcinrd=0.0 F
|
Coefficient for the length times width dependence of CINR for drain side.
|
|
329
|
podvfbinr=0.0 V
|
Coefficient for the geometry-independent part of DVFBINR.
|
|
330
|
pofcinrdep=0.3
|
Coefficient for the geometry-independent part of FCINRDEP.
|
|
331
|
pofcinracc=0.5
|
Coefficient for the geometry-independent part of FCINRACC.
|
|
332
|
poaxinr=0.5
|
Coefficient for the geometry-independent part of AXINR.
|
|
333
|
pofnt=1
|
Coefficient for the geometry-independent part of FNT.
|
|
334
|
pofntexc=0.0
|
Coefficient for the geometry-independent part of FNTEXC.
|
|
335
|
plfntexc=0.0
|
Coefficient for the length dependence of FNTEXC.
|
|
336
|
pwfntexc=0.0
|
Coefficient for the width dependence of FNTEXC.
|
|
337
|
plwfntexc=0.0
|
Coefficient for the length times width dependence of FNTEXC.
|
|
338
|
ponfa=8E+22 V^-1/m4
|
|
|
|
|
Coefficient for the geometry-independent part of NFA.
|
|
339
|
plnfa=0.0 V^-1/m4
|
|
|
|
|
Coefficient for the length dependence of NFA.
|
|
340
|
pwnfa=0.0 V^-1/m4
|
|
|
|
|
Coefficient for the width dependence of NFA.
|
|
341
|
plwnfa=0.0 V^-1/m4
|
|
|
|
|
Coefficient for the length times width dependence of NFA.
|
|
342
|
ponfb=3E+07 V^-1/m2
|
|
|
|
|
Coefficient for the geometry-independent part of NFB.
|
|
343
|
plnfb=0.0 V^-1/m2
|
|
|
|
|
Coefficient for the length dependence of NFB.
|
|
344
|
pwnfb=0.0 V^-1/m2
|
|
|
|
|
Coefficient for the width dependence of NFB.
|
|
345
|
plwnfb=0.0 V^-1/m2
|
|
|
|
|
Coefficient for the length times width dependence of NFB.
|
|
346
|
ponfc=0 V^-1
|
Coefficient for the geometry-independent part of NFC.
|
|
347
|
plnfc=0.0 V^-1
|
Coefficient for the length dependence of NFC.
|
|
348
|
pwnfc=0.0 V^-1
|
Coefficient for the width dependence of NFC.
|
|
349
|
plwnfc=0.0 V^-1
|
Coefficient for the length times width dependence of NFC.
|
|
350
|
poef=1.0
|
Coefficient for the flicker noise frequency exponent.
|
|
351
|
pokvthowe=0
|
Coefficient for the geometry-independent part of KVTHOWE.
|
|
352
|
plkvthowe=0
|
Coefficient for the length dependence part of KVTHOWE.
|
|
353
|
pwkvthowe=0
|
Coefficient for the width dependence part of KVTHOWE.
|
|
354
|
plwkvthowe=0
|
Coefficient for the length times width dependence part of KVTHOWE.
|
|
355
|
pokuowe=0
|
Coefficient for the geometry-independent part of KUOWE.
|
|
356
|
plkuowe=0
|
Coefficient for the length dependence part of KUOWE.
|
|
357
|
pwkuowe=0
|
Coefficient for the width dependence part of KUOWE.
|
|
358
|
plwkuowe=0
|
Coefficient for the length times width dependence part of KUOWE.
|
|
359
|
lmin=0 m
|
Dummy parameter to label binning set.
|
|
360
|
lmax=1.0 m
|
Dummy parameter to label binning set.
|
|
361
|
wmin=0 m
|
Dummy parameter to label binning set.
|
|
362
|
wmax=1.0 m
|
Dummy parameter to label binning set.
|
|
363
|
popsce=0.0
|
Coefficient for the geometry-independent part of PSCE.
|
|
364
|
plpsce=0.0
|
Coefficient for the length dependence of PSCE.
|
|
365
|
pwpsce=0.0
|
Coefficient for the width dependence of PSCE.
|
|
366
|
plwpsce=0.0
|
Coefficient for the length times width dependence of PSCE.
|
|
367
|
popsceb=0.0 V^-1
|
Coefficient for the geometry-independent part of PSCEB.
|
|
368
|
popsced=0.0 V^-1
|
Coefficient for the geometry-independent part of PSCED.
|
|
369
|
povfbedge=(-1.0) V
|
Coefficient for the geometry-independent part of VFBEDGE.
|
|
370
|
postvfbedge=0.0 V/K
|
Coefficient for the geometry-independent part of STVFBEDGE.
|
|
371
|
plstvfbedge=0.0 V/K
|
Coefficient for the length dependence of STVFBEDGE
|
|
372
|
pwstvfbedge=0.0 V/K
|
Coefficient for the width dependence of STVFBEDGE.
|
|
373
|
plwstvfbedge=0.0 V/K
|
Coefficient for the length times width dependence of STVFBEDGE.
|
|
374
|
podphibedge=0.0 V
|
Coefficient for the geometry-independent part of DPHIBEDGE.
|
|
375
|
pldphibedge=0.0 V
|
Coefficient for the length dependence of DPHIBEDGE.
|
|
376
|
pwdphibedge=0.0 V
|
Coefficient for the width dependence of DPHIBEDGE.
|
|
377
|
plwdphibedge=0.0 V
|
Coefficient for the length times width dependence of DPHIBEDGE.
|
|
378
|
poneffedge=5.0e23 m-3
|
Coefficient for the geometry-independent part of NEFFEDGE.
|
|
379
|
plneffedge=0.0 m-3
|
Coefficient for the length dependence of NEFFEDGE.
|
|
380
|
pwneffedge=0.0 m-3
|
Coefficient for the width dependence of NEFFEDGE.
|
|
381
|
plwneffedge=0.0 m-3
|
Coefficient for the length times width dependence of NEFFEDGE.
|
|
382
|
poctedge=0.0
|
Coefficient for the geometry-independent part of CTEDGE.
|
|
383
|
plctedge=0.0
|
Coefficient for the length dependence of CTEDGE.
|
|
384
|
pwctedge=0.0
|
Coefficient for the width dependence of CTEDGE.
|
|
385
|
plwctedge=0.0
|
Coefficient for the length times width dependence of CTEDGE.
|
|
386
|
pobetnedge=5.0e-4 m2/V/s
|
|
|
|
Coefficient for the geometry-independent part of BETNEDGE.
|
|
387
|
plbetnedge=0.0 m2/V/s
|
|
|
|
Coefficient for the length dependence of BETNEDGE.
|
|
388
|
pwbetnedge=0.0 m2/V/s
|
|
|
|
Coefficient for the width dependence of BETNEDGE.
|
|
389
|
plwbetnedge=0.0 m2/V/s
|
|
|
|
Coefficient for the length times width dependence of BETNEDGE.
|
|
390
|
postbetedge=1.0
|
Coefficient for the geometry-independent part of STBETEDGE.
|
|
391
|
plstbetedge=0.0
|
Coefficient for the length dependence of STBETEDGE.
|
|
392
|
pwstbetedge=0.0
|
Coefficient for the width dependence of STBETEDGE.
|
|
393
|
plwstbetedge=0.0
|
Coefficient for the length times width dependence of STBETEDGE.
|
|
394
|
popsceedge=0.0
|
Coefficient for the geometry-independent part of PSCEEDGE.
|
|
395
|
plpsceedge=0.0
|
Coefficient for the length dependence of PSCEEDGE.
|
|
396
|
pwpsceedge=0.0
|
Coefficient for the width dependence of PSCEEDGE.
|
|
397
|
plwpsceedge=0.0
|
Coefficient for the length times width dependence of PSCEEDGE.
|
|
398
|
popscebedge=0.0 V^-1
|
|
|
|
Coefficient for the geometry-independent part of PSCEBEDGE.
|
|
399
|
popscededge=0.0 V^-1
|
|
|
|
Coefficient for the geometry-independent part of PSCEDEDGE.
|
|
400
|
pocfedge=0.0
|
Coefficient for the geometry-independent part of CFEDGE.
|
|
401
|
plcfedge=0.0
|
Coefficient for the length dependence of CFEDGE.
|
|
402
|
pwcfedge=0.0
|
Coefficient for the width dependence of CFEDGE.
|
|
403
|
plwcfedge=0.0
|
Coefficient for the length times width dependence of CFEDGE.
|
|
404
|
pocfdedge=0.0 V^-1
|
Coefficient for the geometry-independent part of CFDEDGE.
|
|
405
|
pocfbedge=0.0 V^-1
|
Coefficient for the geometry-independent part of CFBEDGE.
|
|
406
|
pofntedge=1.0
|
Coefficient for the geometry-independent part of FNTEDGE.
|
|
407
|
ponfaedge=8.0e22 V^-1/m4
|
|
|
|
Coefficient for the geometry-independent part of NFAEDGE.
|
|
408
|
plnfaedge=0.0 V^-1/m4
|
|
|
|
Coefficient for the length dependence of NFAEDGE.
|
|
409
|
pwnfaedge=0.0 V^-1/m4
|
|
|
|
Coefficient for the width dependence of NFAEDGE.
|
|
410
|
plwnfaedge=0.0 V^-1/m4
|
|
|
|
Coefficient for the length times width dependence of NFAEDGE.
|
|
411
|
ponfbedge=3.0e7 V^-1/m2
|
|
|
|
Coefficient for the geometry-independent part of NFBEDGE.
|
|
412
|
plnfbedge=0.0 V^-1/m2
|
|
|
|
Coefficient for the length dependence of NFBEDGE.
|
|
413
|
pwnfbedge=0.0 V^-1/m2
|
|
|
|
Coefficient for the width dependence of NFBEDGE.
|
|
414
|
plwnfbedge=0.0 V^-1/m2
|
|
|
|
Coefficient for the length times width dependence of NFBEDGE.
|
|
415
|
ponfcedge=0.0 V^-1
|
Coefficient for the geometry-independent part of NFCEDGE.
|
|
416
|
plnfcedge=0.0 V^-1
|
Coefficient for the length dependence of NFCEDGE.
|
|
417
|
pwnfcedge=0.0 V^-1
|
Coefficient for the width dependence of NFCEDGE.
|
|
418
|
plwnfcedge=0.0 V^-1
|
Coefficient for the length times width dependence of NFCEDGE.
|
|
419
|
poefedge=1.0
|
Coefficient for the geometry-independent part of EFEDGE.
|
|
420
|
lvaro=0.0 m
|
Geometry-independent difference between actual and programmed gate length.
|
|
421
|
lvarl=0.0
|
Length dependence of LVAR.
|
|
422
|
lvarw=0.0
|
Width dependence of LVAR.
|
|
423
|
lap=0.0 m
|
Effective channel length reduction per side.
|
|
424
|
wvaro=0.0 m
|
Geometry-independent difference between actual and programmed field-oxide opening.
|
|
425
|
wvarl=0.0
|
Length dependence of WVAR.
|
|
426
|
wvarw=0.0
|
Width dependence of WVAR.
|
|
427
|
wot=0.0 m
|
Effective channel width reduction per side.
|
|
428
|
dlq=0.0 m
|
Effective channel length reduction for CV.
|
|
429
|
dwq=0.0 m
|
Effective channel width reduction for CV.
|
|
430
|
vfbo=-1.0 V
|
Geometry-independent flat-band voltage at TR.
|
|
431
|
vfbl=0.0 V
|
Length dependence of flat-band voltage.
|
|
432
|
vfbw=0.0 V
|
Width dependence of flat-band voltage.
|
|
433
|
vfblw=0.0 V
|
Area dependence of flat-band voltage.
|
|
434
|
stvfbo=5e-4 V/K
|
Geometry-independent temperature dependence of VFB.
|
|
435
|
stvfbl=0.0 V/K
|
Length dependence of temperature dependence of VFB.
|
|
436
|
stvfbw=0.0 V/K
|
Width dependence of temperature dependence of VFB.
|
|
437
|
stvfblw=0.0 V/K
|
Area dependence of temperature dependence of VFB.
|
|
438
|
toxo=2e-9 m
|
Gate oxide thickness.
|
|
439
|
epsroxo=3.9
|
Relative permittivity of gate dielectric.
|
|
440
|
nsubo=3e23 m-3
|
Geometry-independent substrate doping.
|
|
441
|
nsubw=0.0
|
Width dependence of background doping NSUBO due to segregation.
|
|
442
|
wseg=1e-8 m
|
Character length of segregation of background doping NSUBO.
|
|
443
|
npck=1e24 m-3
|
Pocket doping level.
|
|
444
|
npckw=0.0
|
Width dependence of pocket doping NPCK due to segregation.
|
|
445
|
wsegp=1e-8 m
|
Character length of segregation of pocket doping NPCK.
|
|
446
|
lpck=1e-8 m
|
Character length of lateral doping profile.
|
|
447
|
lpckw=0.0
|
Width dependence of character length of lateral doping profile.
|
|
448
|
fol1=0.0
|
First length dependence coefficient for short channel body effect.
|
|
449
|
fol2=0.0
|
Second length dependence coefficient for short channel body effect.
|
|
450
|
facneffaco=1.0
|
Geometry-independent pre-factor for effective substrate doping in separate charge calculation.
|
|
451
|
facneffacl=0.0
|
Length dependence of FACNEFFAC.
|
|
452
|
facneffacw=0.0
|
Width dependence of FACNEFFAC.
|
|
453
|
facneffaclw=0.0
|
Area dependence of FACNEFFAC.
|
|
454
|
gfacnudo=1.0
|
Geometry-independent bodyfactor change due to NUD-effect.
|
|
455
|
gfacnudl=0.0
|
Length dependence of GFACNUD.
|
|
456
|
gfacnudlexp=1.0
|
Exponent for length dependence of GFACNUD.
|
|
457
|
gfacnudw=0.0
|
Width dependence of GFACNUD.
|
|
458
|
gfacnudlw=0.0
|
Area dependence of GFACNUD.
|
|
459
|
vsbnudo=0.0 V
|
Lower Vsb value for NUD-effect.
|
|
460
|
dvsbnudo=1.0 V
|
Vsb range for NUD-effect.
|
|
461
|
vnsubo=0.0 V
|
Effective doping bias-dependence parameter.
|
|
462
|
nslpo=0.05 V
|
Effective doping bias-dependence parameter.
|
|
463
|
dnsubo=0.0 V^-1
|
Effective doping bias-dependence parameter.
|
|
464
|
dphibo=0.0 V
|
Geometry-independent offset of PHIB.
|
|
465
|
dphibl=0.0 V
|
Length dependence offset of PHIB.
|
|
466
|
dphiblexp=1.0
|
Exponent for length dependence of offset of PHIB.
|
|
467
|
dphibw=0.0 V
|
Width dependence of offset of PHIB.
|
|
468
|
dphiblw=0.0 V
|
Area dependence of offset of PHIB.
|
|
469
|
delvtaco=0.0 V
|
Geometry-independent offset parameter for PHIB in separate charge calculation.
|
|
470
|
delvtacl=0.0 V
|
Length dependence of DELVTAC.
|
|
471
|
delvtaclexp=1.0
|
Exponent for length dependence of offset of DELVTAC.
|
|
472
|
delvtacw=0.0 V
|
Width dependence of DELVTAC.
|
|
473
|
delvtaclw=0.0 V
|
Area dependence of DELVTAC.
|
|
474
|
npo=1e26 m-3
|
Geometry-independent gate poly-silicon doping.
|
|
475
|
npl=0.0
|
Length dependence of gate poly-silicon doping.
|
|
476
|
cto=0.0
|
Geometry-independent interface states factor.
|
|
477
|
ctl=0.0
|
Length dependence of interface states factor.
|
|
478
|
ctlexp=1.0
|
Exponent for length dependence of interface states factor.
|
|
479
|
ctw=0.0
|
Width dependence of interface states factor.
|
|
480
|
ctlw=0.0
|
Area dependence of interface states factor.
|
|
481
|
toxovo=2e-9 m
|
Overlap oxide thickness.
|
|
482
|
toxovdo=2e-9 m
|
Overlap oxide thickness for drain side.
|
|
483
|
lov=0 m
|
Overlap length for gate/drain and gate/source overlap capacitance.
|
|
484
|
lovd=0 m
|
Overlap length for gate/drain overlap capacitance.
|
|
485
|
novo=5.0e25 m-3
|
Effective doping of overlap region.
|
|
486
|
novdo=5.0e25 m-3
|
Effective doping of overlap region for drain side.
|
|
487
|
cfl=0.0
|
Length dependence of DIBL-parameter.
|
|
488
|
cflexp=2.0
|
Exponent for length dependence of CF.
|
|
489
|
cfw=0.0
|
Width dependence of CF.
|
|
490
|
cfbo=0.0 V^-1
|
Back-bias dependence of CF.
|
|
491
|
uo=5e-2 m2/V/s
|
Zero-field mobility at TR.
|
|
492
|
fbet1=0.0
|
Relative mobility decrease due to first lateral profile.
|
|
493
|
fbet1w=0.0
|
Width dependence of relative mobility decrease due to first lateral profile.
|
|
494
|
lp1=1e-8 m
|
Mobility-related characteristic length of first lateral profile.
|
|
495
|
lp1w=0.0
|
Width dependence of mobility-related characteristic length of first lateral profile.
|
|
496
|
fbet2=0.0
|
Relative mobility decrease due to second lateral profile.
|
|
497
|
lp2=1e-8 m
|
Mobility-related characteristic length of second lateral profile.
|
|
498
|
betw1=0.0
|
First higher-order width scaling coefficient of BETN.
|
|
499
|
betw2=0.0
|
Second higher-order width scaling coefficient of BETN.
|
|
500
|
wbet=1e-9 m
|
Characteristic width for width scaling of BETN.
|
|
501
|
stbeto=1.0
|
Geometry-independent temperature dependence of BETN.
|
|
502
|
stbetl=0.0
|
Length dependence of temperature dependence of BETN.
|
|
503
|
stbetw=0.0
|
Width dependence of temperature dependence of BETN.
|
|
504
|
stbetlw=0.0
|
Area dependence of temperature dependence of BETN.
|
|
505
|
mueo=0.5 m/V
|
Geometry-independent mobility reduction coefficient at TR.
|
|
506
|
muew=0.0
|
Width dependence of mobility reduction coefficient at TR.
|
|
507
|
stmueo=0.0
|
Temperature dependence of MUE.
|
|
508
|
themuo=1.5
|
Mobility reduction exponent at TR.
|
|
509
|
stthemuo=1.5
|
Temperature dependence of THEMU.
|
|
510
|
cso=0.0
|
Geometry-independent coulomb scattering parameter at TR.
|
|
511
|
csl=0.0
|
Length dependence of CS.
|
|
512
|
cslexp=1.0
|
Exponent for length dependence of CS.
|
|
513
|
csw=0.0
|
Width dependence of CS.
|
|
514
|
cslw=0.0
|
Area dependence of CS.
|
|
515
|
stcso=0.0
|
Temperature dependence of CS.
|
|
516
|
xcoro=0.0 V^-1
|
Geometry-independent non-universality parameter.
|
|
517
|
xcorl=0.0
|
Length dependence of non-universality parameter.
|
|
518
|
xcorw=0.0
|
Width dependence of non-universality parameter.
|
|
519
|
xcorlw=0.0
|
Area dependence of non-universality parameter.
|
|
520
|
stxcoro=0.0
|
Temperature dependence of XCOR.
|
|
521
|
fetao=1.0
|
Effective field parameter.
|
|
522
|
rsw1=50.0 Ω
|
Source/drain series resistance for 1 um wide channel at TR.
|
|
523
|
rsw2=0.0
|
Higher-order width scaling of RS.
|
|
524
|
strso=1.0
|
Temperature dependence of RS.
|
|
525
|
rsbo=0.0 V^-1
|
Back-bias dependence of series resistance.
|
|
526
|
rsgo=0.0 V^-1
|
Gate-bias dependence of series resistance.
|
|
527
|
thesato=0.0 V^-1
|
Geometry-independent velocity saturation parameter at TR.
|
|
528
|
thesatl=0.05 V^-1
|
Length dependence of THESAT.
|
|
529
|
thesatlexp=1.0
|
Exponent for length dependence of THESAT.
|
|
530
|
thesatw=0.0
|
Width dependence of velocity saturation parameter.
|
|
531
|
thesatlw=0.0
|
Area dependence of velocity saturation parameter.
|
|
532
|
stthesato=1.0
|
Geometry-independent temperature dependence of THESAT.
|
|
533
|
stthesatl=0.0
|
Length dependence of temperature dependence of THESAT.
|
|
534
|
stthesatw=0.0
|
Width dependence of temperature dependence of THESAT.
|
|
535
|
stthesatlw=0.0
|
Area dependence of temperature dependence of THESAT.
|
|
536
|
thesatbo=0.0 V^-1
|
Back-bias dependence of velocity saturation.
|
|
537
|
thesatgo=0.0 V^-1
|
Gate-bias dependence of velocity saturation.
|
|
538
|
axo=18
|
Geometry-independent linear/saturation transition factor.
|
|
539
|
axl=0.4
|
Length dependence of AX.
|
|
540
|
alpl=5e-4
|
Length dependence of ALP.
|
|
541
|
alplexp=1.0
|
Exponent for length dependence of ALP.
|
|
542
|
alpw=0.0
|
Width dependence of ALP.
|
|
543
|
alp1l1=0.0 V
|
Length dependence of CLM enhancement factor above threshold.
|
|
544
|
alp1lexp=0.5
|
Exponent for length dependence of ALP1.
|
|
545
|
alp1l2=0.0
|
Second_order length dependence of ALP1.
|
|
546
|
alp1w=0.0
|
Width dependence of ALP1.
|
|
547
|
alp2l1=0.0 V^-1
|
Length dependence of CLM enhancement factor below threshold.
|
|
548
|
alp2lexp=0.5
|
Exponent for length dependence of ALP2.
|
|
549
|
alp2l2=0.0
|
Second_order length dependence of ALP2.
|
|
550
|
alp2w=0.0
|
Width dependence of ALP2.
|
|
551
|
vpo=0.05 V
|
CLM logarithmic dependence parameter.
|
|
552
|
a1o=1.0
|
Geometry-independent impact-ionization pre-factor.
|
|
553
|
a1l=0.0
|
Length dependence of A1.
|
|
554
|
a1w=0.0
|
Width dependence of A1.
|
|
555
|
a2o=10 V
|
Impact-ionization exponent at TR.
|
|
556
|
sta2o=0.0 V
|
Temperature dependence of A2.
|
|
557
|
a3o=1.0
|
Geometry-independent saturation-voltage dependence of II.
|
|
558
|
a3l=0.0
|
Length dependence of A3.
|
|
559
|
a3w=0.0
|
Width dependence of A3.
|
|
560
|
a4o=0.0 V^-0.5
|
Geometry-independent back-bias dependence of II.
|
|
561
|
a4l=0.0
|
Length dependence of A4.
|
|
562
|
a4w=0.0
|
Width dependence of A4.
|
|
563
|
gcoo=0.0
|
Gate tunneling energy adjustment.
|
|
564
|
iginvlw=0.0 A
|
Gate channel current pre-factor for 1 um^2 channel area.
|
|
565
|
igovw=0.0 A
|
Gate overlap current pre-factor for 1 um wide channel.
|
|
566
|
igovdw=0.0 A
|
Gate overlap current pre-factor for 1 um wide channel for drain side.
|
|
567
|
stigo=2.0
|
Temperature dependence of IGINV and IGOV.
|
|
568
|
gc2o=0.375
|
Gate current slope factor.
|
|
569
|
gc3o=0.063
|
Gate current curvature factor.
|
|
570
|
chibo=3.1 V
|
Tunneling barrier height.
|
|
571
|
agidlw=0.0 A/V3
|
Width dependence of GIDL pre-factor.
|
|
572
|
agidldw=0.0 A/V3
|
Width dependence of GIDL pre-factor for drain side.
|
|
573
|
bgidlo=41 V
|
GIDL probability factor at TR.
|
|
574
|
bgidldo=41 V
|
GIDL probability factor at TR for drain side.
|
|
575
|
stbgidlo=0.0 V/K
|
Temperature dependence of BGIDL.
|
|
576
|
stbgidldo=0.0 V/K
|
Temperature dependence of BGIDL for drain side.
|
|
577
|
cgidlo=0.0
|
Back-bias dependence of GIDL.
|
|
578
|
cgidldo=0.0
|
Back-bias dependence of GIDL for drain side.
|
|
579
|
cgbovl=0.0 F
|
Oxide capacitance for gate-bulk overlap for 1 um long channel.
|
|
580
|
cfrw=0.0 F
|
Outer fringe capacitance for 1 um wide channel.
|
|
581
|
cfrdw=0.0 F
|
Outer fringe capacitance for 1 um wide channel for drain side.
|
|
582
|
fcgovacco=0.0
|
Factor for overlap capacitances in accumulation regime.
|
|
583
|
fcgovaccdo=0.0
|
Factor for overlap capacitances in accumulation regime for drain side.
|
|
584
|
cgovaccgo=1.0
|
Gate voltage dependence parameter of overlap capacitances in accumulation regime.
|
|
585
|
cinrw=0.0 F
|
Inner fringe capacitance for 1 um wide channel.
|
|
586
|
cinrdw=0.0 F
|
Inner fringe capacitance for 1 um wide channel for drain side.
|
|
587
|
dvfbinro=0.0 V
|
Flat-band voltage offset of inner fringe capacitances.
|
|
588
|
fcinrdepo=0.3
|
Bias dependence parameter of inner fringe capacitances in depletion regime.
|
|
589
|
fcinracco=0.5
|
Bias dependence parameter of inner fringe capacitances in accumulation regime.
|
|
590
|
axinro=0.5
|
Accumulation/depletion transition factor of inner fringe capacitances.
|
|
591
|
fnto=1.0
|
Thermal noise coefficient.
|
|
592
|
fntexcl=0.0
|
Length dependence coefficient of excess noise.
|
|
593
|
nfalw=8e22 V^-1/m4
|
|
|
|
|
First coefficient of flicker noise for 1 um^2 channel area.
|
|
594
|
nfblw=3e7 V^-1/m2
|
|
|
|
|
Second coefficient of flicker noise for 1 um^2 channel area.
|
|
595
|
nfclw=0.0 V^-1
|
Third coefficient of flicker noise for 1 um^2 channel area.
|
|
596
|
efo=1.0
|
Flicker noise frequency exponent.
|
|
597
|
lintnoi=0.0 m
|
Length offset for flicker noise.
|
|
598
|
alpnoi=2.0
|
Exponent for length offset for flicker noise.
|
|
599
|
kvthoweo=0
|
Geometrical independent threshold shift parameter.
|
|
600
|
kvthowel=0
|
Length dependent threshold shift parameter.
|
|
601
|
kvthowew=0
|
Width dependent threshold shift parameter.
|
|
602
|
kvthowelw=0
|
Area dependent threshold shift parameter.
|
|
603
|
kuoweo=0
|
Geometrical independent mobility degradation factor.
|
|
604
|
kuowel=0
|
Length dependent mobility degradation factor.
|
|
605
|
kuowew=0
|
Width dependent mobility degradation factor.
|
|
606
|
kuowelw=0
|
Area dependent mobility degradation factor.
|
|
607
|
munqso=1.0
|
Relative mobility for NQS modelling.
|
|
608
|
rgo=0.0 Ω
|
Gate resistance.
|
|
609
|
rint=0.0 Ω m2
|
Contact resistance between silicide and ploy.
|
|
610
|
rvpoly=0.0 Ω m2
|
|
|
|
|
Vertical poly resistance.
|
|
611
|
rshg=0.0 Ω/Sqr
|
Gate electrode diffusion sheet resistance.
|
|
612
|
dlsil=0.0 m
|
Silicide extension over the physical gate length.
|
|
613
|
rsh=0.0 Ω/sq
|
Sheet resistance of source diffusion.
|
|
614
|
rshd=0.0 Ω/sq
|
Sheet resistance of drain diffusion.
|
|
615
|
rbulko=0.0 Ω
|
Bulk resistance between node BP and BI.
|
|
616
|
rwello=0.0 Ω
|
Well resistance between node BI and B.
|
|
617
|
rjunso=0.0 Ω
|
Source-side bulk resistance between node BI and BS.
|
|
618
|
rjundo=0.0 Ω
|
Drain-side bulk resistance between node BI and BD.
|
|
619
|
rtho=0.0 K/W
|
Geometry-independent part of thermal resistance.
|
|
620
|
rthw1=0.0 K/W
|
Width dependence of thermal resistance.
|
|
621
|
rthw2=0.0
|
Offset in width dependence of thermal resistance.
|
|
622
|
rthlw=0.0
|
Length-correction to width dependence of thermal resistance.
|
|
623
|
ctho=0.0 J/K
|
Geometry-independent part of thermal capacitance.
|
|
624
|
cthw1=0.0 J/K
|
Width dependence of thermal capacitance.
|
|
625
|
cthw2=0.0
|
Offset in width dependence of thermal capacitance.
|
|
626
|
cthlw=0.0
|
Length-correction to width dependence of thermal capacitance.
|
|
627
|
strtho=0.0
|
Temperature sensitivity of RTH.
|
|
628
|
saref=1.0e-6 m
|
Reference distance between OD-edge and poly from one side.
|
|
629
|
sbref=1.0e-6 m
|
Reference distance between OD-edge and poly from other side.
|
|
630
|
wlod=0 m
|
Width parameter.
|
|
631
|
kuo=0 m
|
Mobility degradation/enhancement coefficient.
|
|
632
|
kvsat=0 m
|
Saturation velocity degradation/enhancement coefficient.
|
|
633
|
tkuo=0
|
Temperature dependence of KUO.
|
|
634
|
lkuo=0 m^LLODKUO
|
Length dependence of KUO.
|
|
635
|
wkuo=0 m^WLODKUO
|
Width dependence of KUO.
|
|
636
|
pkuo=0 m^(LLODKUO+WLODKUO
|
|
|
|
Cross-term dependence of KUO.
|
|
637
|
llodkuo=0
|
Length parameter for UO stress effect.
|
|
638
|
wlodkuo=0
|
Width parameter for UO stress effect.
|
|
639
|
kvtho=0 Vm
|
Threshold shift parameter.
|
|
640
|
lkvtho=0 m^LLODVTH
|
|
|
|
|
Length dependence of KVTHO.
|
|
641
|
wkvtho=0 m^WLODVTH
|
|
|
|
|
Width dependence of KVTHO.
|
|
642
|
pkvtho=0 m^(LLODVTH+WLODVTH
|
|
|
|
Cross-term dependence of KVTHO.
|
|
643
|
llodvth=0
|
Length parameter for VTH-stress effect.
|
|
644
|
wlodvth=0
|
Width parameter for VTH-stress effect.
|
|
645
|
stetao=0 m
|
eta0 shift factor related to VTHO change.
|
|
646
|
lodetao=1.0
|
eta0 shift modification factor for stress effect.
|
|
647
|
scref=1.0e-6 m
|
Distance between OD-edge and well edge of a reference device.
|
|
648
|
web=0
|
Coefficient for SCB.
|
|
649
|
wec=0
|
Coefficient for SCC.
|
|
650
|
imax=1000 A
|
Maximum current up to which forward current behaves exponentially.
|
|
651
|
trj=21 C
|
reference temperature.
|
|
652
|
frev=1.0e3
|
Coefficient for reverse breakdown current limitation.
|
|
653
|
cjorbot=1E-3 Fm-2
|
|
|
|
|
Zero-bias capacitance per unit-of-area of bottom component for source-bulk junction.
|
|
654
|
cjorsti=1E-9 Fm^-1
|
|
|
|
|
Zero-bias capacitance per unit-of-length of STI-edge component for source-bulk junction.
|
|
655
|
cjorgat=1E-9 Fm^-1
|
|
|
|
|
Zero-bias capacitance per unit-of-length of gate-edge component for source-bulk junction.
|
|
656
|
vbirbot=1 V
|
Built-in voltage at the reference temperature of bottom component for source-bulk junction.
|
|
657
|
vbirsti=1 V
|
Built-in voltage at the reference temperature of STI-edge component for source-bulk junction.
|
|
658
|
vbirgat=1 V
|
Built-in voltage at the reference temperature of gate-edge component for source-bulk junction.
|
|
659
|
pbot=0.5
|
Grading coefficient of bottom component for source-bulk junction.
|
|
660
|
psti=0.5
|
Grading coefficient of STI-edge component for source-bulk junction.
|
|
661
|
pgat=0.5
|
Grading coefficient of gate-edge component for source-bulk junction.
|
|
662
|
phigbot=1.16 V
|
Zero-temperature bandgap voltage of bottom component for source-bulk junction.
|
|
663
|
phigsti=1.16 V
|
Zero-temperature bandgap voltage of STI-edge component for source-bulk junction.
|
|
664
|
phiggat=1.16 V
|
Zero-temperature bandgap voltage of gate-edge component for source-bulk junction.
|
|
665
|
idsatrbot=1E-12 Am-2
|
|
|
|
|
Saturation current density at the reference temperature of bottom component for source-bulk junction.
|
|
666
|
idsatrsti=1E-18 Am^-1
|
|
|
|
Saturation current density at the reference temperature of STI-edge component for source-bulk junction.
|
|
667
|
idsatrgat=1E-18 Am^-1
|
|
|
|
|
Saturation current density at the reference temperature of gate-edge component for source-bulk junction.
|
|
668
|
csrhbot=1E2 Am-3
|
Shockley-Read-Hall prefactor of bottom component for source-bulk junction.
|
|
669
|
csrhsti=1E-4 Am-2
|
|
|
|
|
Shockley-Read-Hall prefactor of STI-edge component for source-bulk junction.
|
|
670
|
csrhgat=1E-4 Am-2
|
|
|
|
|
Shockley-Read-Hall prefactor of gate-edge component for source-bulk junction.
|
|
671
|
xjunsti=100E-9 m
|
Junction depth of STI-edge component for source-bulk junction.
|
|
672
|
xjungat=100E-9 m
|
Junction depth of gate-edge component for source-bulk junction.
|
|
673
|
ctatbot=1E2 Am-3
|
Trap-assisted tunneling prefactor of bottom component for source-bulk junction.
|
|
674
|
ctatsti=1E-4 Am-2
|
|
|
|
|
Trap-assisted tunneling prefactor of STI-edge component for source-bulk junction.
|
|
675
|
ctatgat=1E-4 Am-2
|
|
|
|
|
Trap-assisted tunneling prefactor of gate-edge component for source-bulk junction.
|
|
676
|
mefftatbot=0.25
|
Effective mass (in units of m0) for trap-assisted tunneling of bottom component for source-bulk junction.
|
|
677
|
mefftatsti=0.25
|
Effective mass (in units of m0) for trap-assisted tunneling of STI-edge component for source-bulk junction.
|
|
678
|
mefftatgat=0.25
|
Effective mass (in units of m0) for trap-assisted tunneling of gate-edge component for source-bulk junction.
|
|
679
|
cbbtbot=1E-12 AV-3
|
|
|
|
|
Band-to-band tunneling prefactor of bottom component for source-bulk junction.
|
|
680
|
cbbtsti=1E-18 AV-3m
|
|
|
|
|
Band-to-band tunneling prefactor of STI-edge component for source-bulk junction.
|
|
681
|
cbbtgat=1E-18 AV-3m
|
|
|
|
|
Band-to-band tunneling prefactor of gate-edge component for source-bulk junction.
|
|
682
|
fbbtrbot=1E9 Vm^-1
|
|
|
|
|
Normalization field at the reference temperature for band-to-band tunneling of bottom component for source-bulk junction.
|
|
683
|
fbbtrsti=1E9 Vm^-1
|
|
|
|
|
Normalization field at the reference temperature for band-to-band tunneling of STI-edge component for source-bulk junction.
|
|
684
|
fbbtrgat=1E9 Vm^-1
|
|
|
|
|
Normalization field at the reference temperature for band-to-band tunneling of gate-edge component for source-bulk junction.
|
|
685
|
stfbbtbot=-1E-3 K^-1
|
|
|
|
Temperature scaling parameter for band-to-band tunneling of bottom component for source-bulk junction.
|
|
686
|
stfbbtsti=-1E-3 K^-1
|
|
|
|
Temperature scaling parameter for band-to-band tunneling of STI-edge component for source-bulk junction.
|
|
687
|
stfbbtgat=-1E-3 K^-1
|
|
|
|
Temperature scaling parameter for band-to-band tunneling of gate-edge component for source-bulk junction.
|
|
688
|
vbrbot=10 V
|
Breakdown voltage of bottom component for source-bulk junction.
|
|
689
|
vbrsti=10 V
|
Breakdown voltage of STI-edge component for source-bulk junction.
|
|
690
|
vbrgat=10 V
|
Breakdown voltage of gate-edge component for source-bulk junction.
|
|
691
|
pbrbot=4 V
|
Breakdown onset tuning parameter of bottom component for source-bulk junction.
|
|
692
|
pbrsti=4 V
|
Breakdown onset tuning parameter of STI-edge component for source-bulk junction.
|
|
693
|
pbrgat=4 V
|
Breakdown onset tuning parameter of gate-edge component for source-bulk junction.
|
|
694
|
cjorbotd=1E-3 Fm-2
|
|
|
|
|
Zero-bias capacitance per unit-of-area of bottom component for drain-bulk junction.
|
|
695
|
cjorstid=1E-9 Fm^-1
|
|
|
|
|
Zero-bias capacitance per unit-of-length of STI-edge component for drain-bulk junction.
|
|
696
|
cjorgatd=1E-9 Fm^-1
|
|
|
|
|
Zero-bias capacitance per unit-of-length of gate-edge component for drain-bulk junction.
|
|
697
|
vbirbotd=1 V
|
Built-in voltage at the reference temperature of bottom component for drain-bulk junction.
|
|
698
|
vbirstid=1 V
|
Built-in voltage at the reference temperature of STI-edge component for drain-bulk junction.
|
|
699
|
vbirgatd=1 V
|
Built-in voltage at the reference temperature of gate-edge component for drain-bulk junction.
|
|
700
|
pbotd=0.5
|
Grading coefficient of bottom component for drain-bulk junction.
|
|
701
|
pstid=0.5
|
Grading coefficient of STI-edge component for drain-bulk junction.
|
|
702
|
pgatd=0.5
|
Grading coefficient of gate-edge component for drain-bulk junction.
|
|
703
|
phigbotd=1.16 V
|
Zero-temperature bandgap voltage of bottom component for drain-bulk junction.
|
|
704
|
phigstid=1.16 V
|
Zero-temperature bandgap voltage of STI-edge component for drain-bulk junction.
|
|
705
|
phiggatd=1.16 V
|
Zero-temperature bandgap voltage of gate-edge component for drain-bulk junction.
|
|
706
|
idsatrbotd=1E-12 Am-2
|
|
|
|
Saturation current density at the reference temperature of bottom component for drain-bulk junction.
|
|
707
|
idsatrstid=1E-18 Am^-1
|
|
|
|
Saturation current density at the reference temperature of STI-edge component for drain-bulk junction.
|
|
708
|
idsatrgatd=1E-18 Am^-1
|
|
|
|
Saturation current density at the reference temperature of gate-edge component for drain-bulk junction.
|
|
709
|
csrhbotd=1E2 Am-3
|
|
|
|
|
Shockley-Read-Hall prefactor of bottom component for drain-bulk junction.
|
|
710
|
csrhstid=1E-4 Am-2
|
|
|
|
|
Shockley-Read-Hall prefactor of STI-edge component for drain-bulk junction.
|
|
711
|
csrhgatd=1E-4 Am-2
|
|
|
|
|
Shockley-Read-Hall prefactor of gate-edge component for drain-bulk junction.
|
|
712
|
xjunstid=100E-9 m
|
Junction depth of STI-edge component for drain-bulk junction.
|
|
713
|
xjungatd=100E-9 m
|
Junction depth of gate-edge component for drain-bulk junction.
|
|
714
|
ctatbotd=1E2 Am-3
|
|
|
|
|
Trap-assisted tunneling prefactor of bottom component for drain-bulk junction.
|
|
715
|
ctatstid=1E-4 Am-2
|
|
|
|
|
Trap-assisted tunneling prefactor of STI-edge component for drain-bulk junction.
|
|
716
|
ctatgatd=1E-4 Am-2
|
|
|
|
|
Trap-assisted tunneling prefactor of gate-edge component for drain-bulk junction.
|
|
717
|
mefftatbotd=0.25
|
Effective mass (in units of m0) for trap-assisted tunneling of bottom component for drain-bulk junction.
|
|
718
|
mefftatstid=0.25
|
Effective mass (in units of m0) for trap-assisted tunneling of STI-edge component for drain-bulk junction.
|
|
719
|
mefftatgatd=0.25
|
Effective mass (in units of m0) for trap-assisted tunneling of gate-edge component for drain-bulk junction.
|
|
720
|
cbbtbotd=1E-12 AV-3
|
|
|
|
|
Band-to-band tunneling prefactor of bottom component for drain-bulk junction.
|
|
721
|
cbbtstid=1E-18 AV-3m
|
|
|
|
|
Band-to-band tunneling prefactor of STI-edge component for drain-bulk junction.
|
|
722
|
cbbtgatd=1E-18 AV-3m
|
|
|
|
|
Band-to-band tunneling prefactor of gate-edge component for drain-bulk junction.
|
|
723
|
fbbtrbotd=1E9 Vm^-1
|
|
|
|
|
Normalization field at the reference temperature for band-to-band tunneling of bottom component for drain-bulk junction.
|
|
724
|
fbbtrstid=1E9 Vm^-1
|
|
|
|
|
Normalization field at the reference temperature for band-to-band tunneling of STI-edge component for drain-bulk junction.
|
|
725
|
fbbtrgatd=1E9 Vm^-1
|
|
|
|
|
Normalization field at the reference temperature for band-to-band tunneling of gate-edge component for drain-bulk junction.
|
|
726
|
stfbbtbotd=-1E-3 K^-1
|
|
|
|
Temperature scaling parameter for band-to-band tunneling of bottom component for drain-bulk junction.
|
|
727
|
stfbbtstid=-1E-3 K^-1
|
|
|
|
Temperature scaling parameter for band-to-band tunneling of STI-edge component for drain-bulk junction.
|
|
728
|
stfbbtgatd=-1E-3 K^-1
|
|
|
|
Temperature scaling parameter for band-to-band tunneling of gate-edge component for drain-bulk junction.
|
|
729
|
vbrbotd=10 V
|
Breakdown voltage of bottom component for drain-bulk junction.
|
|
730
|
vbrstid=10 V
|
Breakdown voltage of STI-edge component for drain-bulk junction.
|
|
731
|
vbrgatd=10 V
|
Breakdown voltage of gate-edge component for drain-bulk junction.
|
|
732
|
pbrbotd=4 V
|
Breakdown onset tuning parameter of bottom component for drain-bulk junction.
|
|
733
|
pbrstid=4 V
|
Breakdown onset tuning parameter of STI-edge component for drain-bulk junction.
|
|
734
|
pbrgatd=4 V
|
Breakdown onset tuning parameter of gate-edge component for drain-bulk junction.
|
|
735
|
swjunexp=0
|
Flag for JUNCAP-express; 0,full model, 1,express model.
|
|
736
|
vjunref=2.5
|
Typical maximum source-bulk junction voltage; usually about 2*VSUP.
|
|
737
|
fjunq=0.03
|
Fraction below which source-bulk junction capacitance components are considered negligible.
|
|
738
|
vjunrefd=2.5
|
Typical maximum drain-bulk junction voltage; usually about 2*VSUP.
|
|
739
|
fjunqd=0.03
|
Fraction below which drain-bulk junction capacitance components are considered negligible.
|
|
740
|
dta=0.0 K
|
Temperature offset w.r.t. ambient temperature.
|
|
741
|
noisemethod=oldcmi
|
|
|
|
|
Induced gate noise implementation. Possible values are oldcmi and subckt.
|
|
742
|
swqsat=0
|
Flag for separate capacitance calculation in saturation only: 0=off, 1=on.
|
|
743
|
swqpart=0
|
Flag for drain/source charge partitioning; 0=linear distribution, 1=source.Flag for drain/source charge partitioning; 0=linear distribution, 1=source.
|
|
744
|
cfac=0.0
|
DIBL-parameter of charge model when SWQSAT=1.
|
|
745
|
thesatac=1.0 V^-1
|
Velocity saturation parameter at TR of charge model when SWQSAT=1.
|
|
746
|
axac=3.0
|
Linear/saturation transition factor of charge model when SWQSAT=1.
|
|
747
|
alpac=0.01
|
CLM pre-factor of charge model when SWQSAT=1.
|
|
748
|
gc2ov=0.375
|
Gate overlap current slope factor, used only when SWIGATE=2.
|
|
749
|
gc3ov=0.063
|
Gate overlap current curvature factor, used only when SWIGATE=2.
|
|
750
|
cfacl=0.0
|
Length dependence of DIBL-parameter of charge model when SWQSAT=1.
|
|
751
|
cfaclexp=2.0
|
Exponent for length dependence of CF.
|
|
752
|
cfacw=0.0
|
Width dependence of CF.
|
|
753
|
thesataco=0.0 V^-1
|
Geometry-independent velocity saturation parameter at TR of charge model when SWQSAT=1.
|
|
754
|
thesatacl=0.05 V^-1
|
Length dependence of THESATAC.
|
|
755
|
thesataclexp=1.0
|
Exponent for length dependence of THESATAC.
|
|
756
|
thesatacw=0.0
|
Width dependence of THESATAC.
|
|
757
|
thesataclw=0.0
|
Area dependence of THESATAC.
|
|
758
|
axaco=18.0
|
Geometry-independent linear/saturation transition factor of charge model when SWQSAT=1.
|
|
759
|
axacl=0.4
|
Length dependence of AXAC.
|
|
760
|
alpacl=5.0e-4
|
Length dependence of ALPAC.
|
|
761
|
alpaclexp=1.0
|
Exponent for length dependence of ALPAC.
|
|
762
|
alpacw=0.0
|
Width dependence of ALPAC.
|
|
763
|
gc2ovo=0.375
|
Gate overlap current slope factor, used only when SWIGATE=2.
|
|
764
|
gc3ovo=0.063
|
Gate overlap current curvature factor, used only when SWIGATE=2.
|
|
765
|
pocfac=0.0
|
Coefficient for the geometry dependence of CFAC.
|
|
766
|
plcfac=0.0
|
Coefficient for the length dependence of CFAC.
|
|
767
|
pwcfac=0.0
|
Coefficient for the width dependence of CFAC.
|
|
768
|
plwcfac=0.0
|
Coefficient for the length times width dependence of CFAC.
|
|
769
|
pothesatac=1.0 V^-1
|
Coefficient for the geometry-independent part of THESATAC.
|
|
770
|
plthesatac=0.0 V^-1
|
Coefficient for the length dependence of THESATAC.
|
|
771
|
pwthesatac=0.0 V^-1
|
Coefficient for the width dependence of THESATAC.
|
|
772
|
plwthesatac=0.0 V^-1
|
Coefficient for the length times width dependence of THESATAC.
|
|
773
|
poaxac=3.0
|
Coefficient for the geometry-independent part of AXAC.
|
|
774
|
plaxac=0.0
|
Coefficient for the length dependence of AXAC.
|
|
775
|
pwaxac=0.0
|
Coefficient for the width dependence of AXAC.
|
|
776
|
plwaxac=0.0
|
Coefficient for the length times width dependence of AXAC.
|
|
777
|
poalpac=1.0e-2
|
Coefficient for the geometry-independent part of ALPAC.
|
|
778
|
plalpac=0.0
|
Coefficient for the length dependence of ALPAC
|
|
779
|
pwalpac=0.0
|
Coefficient for the width dependence of ALPAC.
|
|
780
|
plwalpac=0.0
|
Coefficient for the length times width dependence of ALPAC.
|
|
781
|
pogc2ov=0.375
|
Coefficient for the geometry-independent part of GC2OV, used only when SWIGATE=2.
|
|
782
|
pogc3ov=0.063
|
Coefficient for the geometry-independent part of GC3OV, used only when SWIGATE=2.
|
|
783
|
kvsatac=0.0 m
|
Saturation velocity degradation/enhancement coefficient of charge model when SWQSAT=1.
|
|
784
|
betnedge=5.0e-4 m2/V/s
|
|
|
|
Channel aspect ratio times zero-field mobility of edge transistor.
|
|
785
|
stbetedge=1.0
|
Temperature dependence of BETNEDGE.
|
|
786
|
betedgew=0.0
|
Width scaling coefficient of edge transistor mobility.
|
|
787
|
cfbedge=0.0 V^-1
|
Bulk voltage dependence parameter of DIBL-parameter of edge transistors.
|
|
788
|
cfbedgeo=0.0 V^-1
|
Bulk voltage dependence parameter of DIBL-parameter of edge transistors.
|
|
789
|
cfd=0.0 V^-1
|
Drain voltage dependence of CF.
|
|
790
|
cfdedge=0.0 V^-1
|
Drain voltage dependence parameter of DIBL-parameter of edge transistors.
|
|
791
|
cfdedgeo=0.0 V^-1
|
Drain voltage dependence parameter of DIBL-parameter of edge transistors.
|
|
792
|
cfdo=0.0 V^-1
|
Drain voltage dependence of CF.
|
|
793
|
cfedge=0.0
|
DIBL parameter of edge transistors.
|
|
794
|
cfedgel=0.0
|
Length dependence of DIBL-parameter of edge transistors.
|
|
795
|
cfedgelexp=2.0
|
Exponent for length dependence of DIBL-parameter of edge transistors.
|
|
796
|
cfedgew=0.0
|
Width dependence of DIBL-parameter of edge transistors.
|
|
797
|
ctedge=0.0
|
Interface states factor of edge transistors.
|
|
798
|
ctedgeo=0.0
|
Geometry-independent interface states factor of edge transistors.
|
|
799
|
ctedgel=0.0
|
Length dependence of interface states factor of edge transistors.
|
|
800
|
ctedgelexp=1.0
|
Exponent for length dependence of interface states factor of edge transistors.
|
|
801
|
dphibedge=0.0 V
|
Offset parameter for PHIB of edge transistors.
|
|
802
|
dphibedgeo=0.0 V
|
Geometry-independent of edge transistor PHIB offset.
|
|
803
|
dphibedgel=0.0 V
|
Length dependence of edge transistor PHIB offset.
|
|
804
|
dphibedgelexp=1.0
|
Exponent for length dependence of edge transistor PHIB offset.
|
|
805
|
dphibedgew=0.0 V
|
Width dependence of edge transistor PHIB offset.
|
|
806
|
dphibedgelw=0.0 V
|
Area dependence of edge transistor PHIB offset.
|
|
807
|
efedge=1.0
|
Flicker noise frequency exponent of edge transistors.
|
|
808
|
efedgeo=1.0
|
Flicker noise frequency exponent.
|
|
809
|
fbetedge=0.0
|
Length dependence of edge transistor mobility.
|
|
810
|
fntedge=1.0
|
Thermal noise coefficient of edge transistors.
|
|
811
|
fntedgeo=1.0
|
Thermal noise coefficient.
|
|
812
|
lpedge=1.0e-8 m
|
Exponent for length dependence of edge transistor mobility.
|
|
813
|
neffedge=5.0e23 m-3
|
Effective substrate doping of edge transistors.
|
|
814
|
nfaedge=8.0e22 V^-1/m4
|
First coefficient of flicker noise of edge transistors.
|
|
815
|
nfaedgelw=8.0e22 V^-1/m4
|
First coefficient of flicker noise for 1 um^2 channel area.
|
|
816
|
nfbedge=3.0e07 V^-1/m2
|
Second coefficient of flicker noise of edge transistors.
|
|
817
|
nfbedgelw=3.0e7 V^-1/m2
|
Second coefficient of flicker noise for 1 um^2 channel area.
|
|
818
|
nfcedge=0.0 V^-1
|
Third coefficient of flicker noise of edge transistors.
|
|
819
|
nfcedgelw=0.0 V^-1
|
Third coefficient of flicker noise for 1 um^2 channel area.
|
|
820
|
nsubedgel=0.0
|
Length dependence of edge transistor substrate doping.
|
|
821
|
nsubedgew=0.0
|
Width dependence of edge transistor substrate doping.
|
|
822
|
nsubedgelw=0.0
|
Area dependence of edge transistor substrate doping.
|
|
823
|
nsubedgeo=5.0e23 m-3
|
Geometry-independent substrate doping of edge transistors.
|
|
824
|
psce=0.0
|
Subthreshold slope coefficient for short channel transistor.
|
|
825
|
psceb=0.0 V^-1
|
Bulk voltage dependence parameter of subthreshold slope coefficient for short channel transistor.
|
|
826
|
pscebedge=0.0 V^-1
|
Bulk voltage dependence parameter of subthreshold slope coefficient for short channel edge transistors.
|
|
827
|
pscebedgeo=0.0 V^-1
|
Bulk voltage dependence parameter of subthreshold slope coefficient for short channel edge transistors.
|
|
828
|
pscebo=0.0 V^-1
|
Bulk voltage dependence parameter of subthreshold slope coefficient for short channel transistor.
|
|
829
|
psced=0.0 V^-1
|
Drain voltage dependence parameter of subthreshold slope coefficient for short channel transistor.
|
|
830
|
pscededge=0.0 V^-1
|
Drain voltage dependence parameter of subthreshold slope coefficient for short channel edge transistors.
|
|
831
|
pscedo=0.0 V^-1
|
Drain voltage dependence parameter of subthreshold slope coefficient for short channel transistor.
|
|
832
|
pscededgeo=0.0 V^-1
|
Drain voltage dependence parameter of subthreshold slope coefficient for short channel edge transistors.
|
|
833
|
psceedge=0.0
|
Subthreshold slope coefficient for short channel edge transistors.
|
|
834
|
psceedgel=0.0
|
Length dependence of subthreshold slope coefficient for short channel edge transistors.
|
|
835
|
psceedgelexp=2.0
|
Exponent for length dependence of subthreshold slope coefficient for short channel edge transistors.
|
|
836
|
psceedgew=0.0
|
Exponent for length dependence of subthreshold slope coefficient for short channel edge transistor.
|
|
837
|
pscel=0.0
|
Length dependence of subthreshold slope coefficient for short channel transistor.
|
|
838
|
pscelexp=2.0
|
Exponent for length dependence of subthreshold slope coefficient for short channel transistor.
|
|
839
|
pscew=0.0
|
Exponent for length dependence of subthreshold slope coefficient for short channel transistor.
|
|
840
|
stbetedgeo=1.0
|
Geometry-independent temperature dependence of BETNEDGE.
|
|
841
|
stbetedgel=0.0
|
Length dependence of temperature dependence of BETNEDGE.
|
|
842
|
stbetedgew=0.0
|
Width dependence of temperature dependence of BETNEDGE.
|
|
843
|
stbetedgelw=0.0
|
Area dependence of temperature dependence of BETNEDGE.
|
|
844
|
stvfbedge=5.0e-4 V/K
|
Temperature dependence of VFBEDGE.
|
|
845
|
stvfbedgeo=5.0e-4 V/K
|
Geometry-independent temperature dependence of VFBEDGE.
|
|
846
|
stvfbedgel=0.0 V/K
|
Length dependence of temperature dependence of VFBEDGE.
|
|
847
|
stvfbedgew=0.0 V/K
|
Width dependence of temperature dependence of VFBEDGE.
|
|
848
|
stvfbedgelw=0.0 V/K
|
Area dependence of temperature dependence of VFBEDGE.
|
|
849
|
vfbedge=(-1.0) V
|
Flat band voltage of edge transistors at TR.
|
|
850
|
vfbedgeo=(-1.0) V
|
Geometry-independent flat-band voltage of edge transistors at TR.
|
|
851
|
wedge=1.0e-8 m
|
Electrical width of edge transistor per side.
|
|
852
|
wedgew=0.0
|
Width dependence of edge WEDGE.
|
|
853
|
w=10e-6 m
|
Default width.
|
|
854
|
l=10e-6 m
|
Default length.
|
|
855
|
nf=1
|
Number of fingers, It served as the default value of instance nf.
|
|
856
|
vds_max=infinity V
|
|
|
|
|
Maximum allowed voltage cross source and drain.
|
|
857
|
vgd_max=infinity V
|
|
|
|
|
Maximum allowed voltage cross gate and drain.
|
|
858
|
vgs_max=infinity V
|
|
|
|
|
Maximum allowed voltage cross gate and source/bulk.
|
|
859
|
vbd_max=infinity V
|
|
|
|
|
Maximum allowed voltage cross source/drain and bulk.
|
|
860
|
vbs_max=vbd_max V
|
Maximum allowed voltage cross source and bulk.
|
|
861
|
vgb_max=infinity V
|
|
|
|
|
Maximum allowed voltage cross gate and bulk.
|
|
862
|
vgdr_max=vgd_max V
|
|
|
|
|
Maximum allowed reverse voltage cross gate and drain.
|
|
863
|
vgsr_max=vgs_max V
|
|
|
|
|
Maximum allowed reverse voltage cross gate and source.
|
|
864
|
vgbr_max=vgb_max V
|
|
|
|
|
Maximum allowed reverse voltage cross gate and bulk.
|
|
865
|
vbsr_max=vbs_max V
|
|
|
|
|
Maximum allowed reverse voltage cross source and bulk.
|
|
866
|
vbdr_max=vbd_max V
|
|
|
|
|
Maximum allowed reverse voltage cross source/drain and bulk.
|
|
867
|
vthmod
|
Vth output selector. 'std' outputs model equation Vth. 'vthcc' outputs constant current Vth, and may impact simulation performance. The default value is taken from the options parameter 'vthmod'. Possible values are std and vthcc.
|
|
868
|
ivth (A)
|
Vth current parameter. The default value is taken from the options parameter 'ivthn' or 'ivthp', depending on the type of the model.
|
|
869
|
ivthw (m)
|
Width offset for constant current Vth. The default value is taken from the options parameter 'ivthw'.
|
|
870
|
ivthl (m)
|
Length offset for constant current Vth. The default value is taken from the options parameter 'ivthl'.
|
|
871
|
ivth_vdsmin (V)
|
Minimum Vds in constant current Vth calculating. The default value is taken from the options parameter 'ivth_vdsmin'.
|
|
872
|
st2vfb=0.0 k-1
|
Quadratic temperature dependence of VFB.
|
|
873
|
thecs=2.0
|
Coulomb scattering exponent at TR.
|
|
874
|
stthecs=0.0
|
Temperature dependence of THECS.
|
|
875
|
post2vfb=0.0 k-1
|
Coefficient for the geometry-independent part of ST2VFB.
|
|
876
|
potthecs=2.0
|
Coefficient for the geometry-independent part of THECS.
|
|
877
|
postthecs=0.0
|
Coefficient for the geometry-independent part of STTHECS.
|
|
878
|
st2vfb0=0.0 k-1
|
Quadratic temperature dependence of VFB.
|
|
879
|
thecso=2.0
|
Coulomb scattering exponent at TR.
|
|
880
|
stthecso=0.0
|
Temperature dependence of THECS.
|
|
881
|
ctg=0.0
|
Gate voltage dependence of interface states factor.
|
|
882
|
ctb=0.0
|
Bulk voltage dependence of interface states factor.
|
|
883
|
stct=1.0
|
Geometry-independent temperature dependence of CT.
|
|
884
|
poctg=0.0
|
Coefficient for the geometry-independent part of CTG.
|
|
885
|
poctb=0.0
|
Coefficient for the geometry-independent part of CTB.
|
|
886
|
postct=1.0
|
Coefficient for the geometry-independent part of STCT.
|
|
887
|
ctbo=0.0
|
Bulk voltage dependence of interface states factor.
|
|
888
|
stcto=1.0
|
Geometry-independent temperature dependence of CT.
|
|
889
|
ctgo=0.0
|
Gate voltage dependence of interface states factor.
|
|
890
|
nsubedgelexp=1.0
|
Exponent for length dependence of edge transistor substrate doping.
|
|
891
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. This option does not affect input syntax.
Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice, mica, tispice and pspice.
|
