Product Documentation
Spectre Circuit Simulator Components and Device Models Reference
Product Version 23.1, June 2023

26


PSP-Based MOS Varactor Model (mosvar)

The PSP-based varactor model is intended for analog and radio-frequency circuit design. It includes dynamic inversion, finite poly doping, quantum mechanics, gate tunneling for different polarity combinations, and parasitics to model advanced MOS technologies.

Device Structure

The following figure shows a cross section of the standard MOS varactor offered in the current MOS technologies with its equivalent circuit model overlapped on it. g, bi and b are the external terminals while gii, gi and ci are the internal nodes.

The following table explains the meanings of the symbols in the above figure.

No. Name Description

1

C

Gate-channel capacitance

2

Cfr

Fringe and overlap capacitance

3

Igc

Gate-channel current

4

Igov

Gate-overlap current

5

Rgsal

Metal resistance

6

Rgpv

Poly gate resistance

7

Rac

Accumulation resistance

8

Rsub

Substrate (in well region) resistance

9

Rend

End resistance

Related Topics

Model Equations

Model Version Updates

Model Usage

Component Statements


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