Component Statements
This device is supported within altergroups.
Instance Parameters
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w (m)
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Channel width.
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l (m)
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Channel length.
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as (m^2)
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Area of source diffusion.
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ad (m^2)
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Area of drain diffusion.
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ps (m)
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Perimeter of source diffusion.
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pd (m)
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Perimeter of drain diffusion.
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nrd (m/m)
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Number of squares of drain diffusion.
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nrs (m/m)
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Number of squares of source diffusion.
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rdc (Ohm)
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Drain contact resistance.
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rsc (Ohm)
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Source contact resistance.
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m=1
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Multiplicity factor (number of MOSFETs in parallel).
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ns=1
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Series Multiplicity factor (number of MOSFETs in series).
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region=triode
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Estimated operating region. Spectre outputs a number (0-3) in rawfile. Possible values are off, triode, sat, or subth.
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trise
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Temperature rise from ambient.
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isnoisy=yes
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Should device generate noise. Possible values are no or yes.
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Model Parameters
Device type parameters:
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type=n
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Transistor type. Possible values are n or p.
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vnds=-1.0 m
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Reverse diode current transition point.
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nds=1.0 m
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Reverse bias slope coefficient.
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compatible=spectre
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Encourage device equations to be compatible with a foreign simulator. This option does not affect input syntax. Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, or sspice.
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Process parameters:
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tox=2e-8 m
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Gate oxide thickness.
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cox=7e-4 F/m^2
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Gate oxide capacitance. (Overrides Tox).
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xj=1.0e-7 m
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Metallurgical junction depth.
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dw=0 m
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Channel Width Correction.
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dl=0 m
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Channel Length Correction.
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nfs=0 cm^-2
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Fast surface state density.
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nsub=1.13e16 cm^-3
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Channel doping concentration.
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Drain current model parameters:
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vto=0.5 V
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Threshold voltage at zero body bias.
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gamma=1.0 sqrt(V)
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Body-effect parameter.
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phi=0.7 V
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Surface potential at strong inversion.
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kp=5.0e-5 A/V^2
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Transconductance parameter.
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e0=1.0e12 V/m
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Vertical Critical Field.
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ucrit=2.0e6 V/cm
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Longitudinal Critical field for mobility degradation.
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theta=0.0 1/V
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Mobility reduction coefficient.
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uo=710 cm^2/V*s
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Carrier surface mobility.
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vmax (m/s)
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Carrier saturation velocity.
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vfb (V)
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Flat-band voltage.
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lambda=0.5
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Channel length modulation parameter.
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weta=0.25
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Narrow Channel Effect Coefficient.
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leta=0.1
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Short Channel Effect Coefficient.
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xw=0 m
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Width variation due to masking and etching.
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xl=0 m
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Length variation due to masking and etching.
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meto=0 m
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Metal overlap in fringing field.
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Impact ionization parameters
:
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iba=0 1/m
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First Impact Ionization Coefficient.
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ibb=3.0e8 V/m
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Second Impact Ionization Coefficient.
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ibc=0
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Third Impact Ionization Coefficient.
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ibn=1.0
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Saturation velocity factor for impact ionization.
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Reverse Short Channel parameters
:
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q0=0 A*s/m^2
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Reverse short channel peak charge density.
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lk=2.9e-7 m
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Reverse short channel characteristic length.
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Charge model selection parameters:
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xqc=0.0
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Drain/source channel charge partition in saturation for charge models, e.g. use 0.4 for 40/60, 0.5 for 50/50, 0 for 0/100.
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Junction diode model parameters:
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is=1e-14 A
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Bulk junction reverse saturation current.
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js (A/m^2)
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Bulk junction reverse saturation current density.
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jsw=0 A/m
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Bulk junction reverse saturation sidewall current density.
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n=1
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Junction emission coefficient.
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dskip=yes
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Use simple piece-wise linear model for diode currents below 0.1*`iabstol'. Possible values are no or yes.
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imelt=`imax' A
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Explosion current, diode is linearized beyond this current to aid convergence.
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Junction capacitance model parameters:
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cbd=0 F
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Bulk-drain zero-bias p-n capacitance.
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cbs=0 F
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Bulk-source zero-bias p-n capacitance.
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cj=0 F/m^2
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Zero-bias junction bottom capacitance density.
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cjsw=0 F/m
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Zero-bias junction sidewall capacitance density.
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mj=0.5
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Bulk junction bottom grading coefficient.
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mjsw=0.33
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Bulk junction sidewall grading coefficient.
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cjswg=0 F/m
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Gate-side zero-bias junction sidewall capacitance density.
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mjswg=0.33
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Gate-side bulk junction sidewall grading coefficient.
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pbswg=0.8 V
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Gate-side junction built-in potential.
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fc=0.5
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Forward-bias capacitance coefficient.
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pb=0.8 V
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ulk p-n bottom contact potential.
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pbsw=0.8 V
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Side-wall contact potential.
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tt=0.0 V
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Bulk p-n transit time.
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fcsw=0.5
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Side-wall forward-bias depletion capacitance threshold.
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Overlap capacitance parameters:
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cgso=0 F/m
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Gate-source overlap capacitance.
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cgdo=0 F/m
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Gate-drain overlap capacitance.
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cgbo=0 F/m
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ate-bulk overlap capacitance.
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Parasitic resistance parameters:
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rs=0 Ohm
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Source resistance.
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rd=0 Ohm
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Drain resistance.
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rsh=0 Ohm/sqr
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Source/drain diffusion sheet resistance.
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rss=0 Ohm*m
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Scalable source resistance.
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rdd=0 Ohm*m
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Scalable drain resistance.
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rsc=0 Ohm
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Source contact resistance.
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rdc=0 Ohm
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Drain contact resistance.
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minr=0.1 Ohm
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Minimum source/drain resistance.
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ldif=0 m
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Lateral diffusion beyond the gate.
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hdif=0 m
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Length of heavily doped diffusion.
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Short distance matching parameters:
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avto=0 V*m
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Area related threshold voltage mismatch parameter.
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akp=0 m
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Area related gain mismatch parameter.
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agamma=0 sqrt(V)*m
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Area related body effect mismatch parameter.
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Operating region warning control parameters:
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alarm=none
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Forbidden operating region. Possible values are none, off, triode, sat, subth, or rev.
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imax=1 A
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Maximum current, currents above this limit generate a warning.
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jmax=1e8 A/m^2
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Maximum current density, currents above this limit generate a warning.
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vbox=1e9*tox V
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Oxide breakdown voltage.
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bvj=infinity V
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Junction reverse breakdown voltage.
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Temperature effects parameters:
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tnom (C)
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Parameters measurement temperature. Default set by `options'.
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trise=0 C
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Temperature rise from ambient.
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tcv=1.0e-3 V/C
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Threshold voltage temperature coefficient.
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bex=-1.5
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Mobility temperature exponent.
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ucex=0.8
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Longitudinal critical field temp. exponent.
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ibbt=9.0e-4 1/C
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Temperature coefficient for IBB.
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xti=3
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Saturation current temperature exponent.
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tlev=0
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DC temperature selector.
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tlevc=0
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C temperature selector.
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phitmod=0
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hi(T) selector for sanyo.
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eg=1.12452 V
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Energy band gap.
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gap1=7.02e-4 V/C
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Band gap temperature coefficient.
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gap2=1108 C
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Band gap temperature offset.
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tr1=0.6
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First source-drain resistance temperature coefficient.
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tr2=0.6
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Second source-drain resistance temperature coefficient.
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ptc=0 V/C
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Surface potential temperature coefficient.
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pta=0 V/C
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Junction potential temperature coefficient.
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ptp=0 V/C
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Sidewall junction potential temperature coefficient.
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cta=0 1/C
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Junction capacitance temperature coefficient.
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ctp=0 1/C
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Sidewall junction capacitance temperature coefficient.
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Default instance parameters:
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w=3e-6 m
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Default channel width.
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l=3e-6 m
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Default channel length.
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as=0 m^2
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Default area of source diffusion.
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ad=0 m^2
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Default area of drain diffusion.
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ps=0 m
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Default perimeter of source diffusion.
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pd=0 m
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Default perimeter of drain diffusion.
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nrd=0 m/m
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Default number of squares of drain diffusion.
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nrs=0 m/m
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Default number of squares of source diffusion.
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Noise model parameters:
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noisemod=1
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Noise model selector.
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kf=0
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Flicker (1/f) noise coefficient.
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af=1
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Flicker (1/f) noise exponent.
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ef=1
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Flicker (1/f) noise frequency exponent.
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nlevel=1
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Noise level selector just for spice3 compatible.
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Model selection parameters:
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nqs=0
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Nonquasi-static flag.
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satlim=exp(4)
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Ratio defining saturation limit.
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ekvint=0.0
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Interpolation function selector.
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scalem=1.0
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Model scaling factor.
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update=2.6
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Model version selector.
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Auto Model Selector parameters:
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wmax=1.0 m
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Maximum channel width for which the model is valid.
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wmin=0.0 m
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Minimum channel width for which the model is valid.
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lmax=1.0 m
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Maximum channel length for which the model is valid.
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lmin=0.0 m
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Minimum channel length for which the model is valid.
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msgskip=off
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Skip some warning message customer requested. Possible values are off or on.
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DC-mismatch model parameters:
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mvtwl=0.0 V*m
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Threshold mismatch area dependence.
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mvtwl2=0.0 v*m^1.5
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Threshold mismatch area square dependence.
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mvt0=0.0 V
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Threshold mismatch intercept.
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mbe0=0.0
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Beta mismatch intercept.
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mbewl=0.0 m
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Beta mismatch area dependence.
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Imax and Imelt
The imax parameter aids convergence and prevents numerical overflow. The junction characteristics of the device are accurately modeled for current up toimax. If imax is exceeded during iterations, the linear model is substituted until the current drops below imax or until convergence is achieved. If convergence is achieved with the current exceeding imax, the results are inaccurate, and a warning is printed out.
A separate model parameter, imelt, is used as a limit warning for the junction current. This parameter can be set to the maximum current rating of the device. When any component of the junction current exceeds imelt, the base and collector currents are composed of many exponential terms, a warning will be issued and the results become inaccurate. The junction current is linearized above the value of `imelt' to prevent arithmetic exception, with the exponential term replaced by a linear equation at imelt.
Both of these parameters have current density counterparts, jmax and jmelt, that you can specify if you want the absolute current values to depend on the device area.
Auto Model Selection
Many models need to be characterized for different geometries in order to obtain accurate results for model development. The model selector program automatically searches for a model with the length and width range specified in the instance statement and uses this model in the simulations.
For the auto model selector program to find a specific model, the models to be searched should be grouped together within braces. Such a group is called a model group. An opening brace is required at the end of the line defining each model group. Every model in the group is given a name followed by a colon and the list of parameters. Also, the four geometric parameters `lmax', `lmin', `wmax', and `wmin' should be given. The selection criteria to choose a model is as follows:
lmin <= inst_length < lmax and wmin <= inst_width < wmax
Example:
model ModelName ModelType {
1: <model parameters> lmin=2 lmax=4 wmin=1 wmax=2
2: <model parameters> lmin=1 lmax=2 wmin=2 wmax=4
3: <model parameters> lmin=2 lmax=4 wmin=4 wmax=6
}
Then for a given instance
M1 1 2 3 4 ModelName w=3 l=1.5
the program would search all the models in the model group with the name ModelName and then pick the first model whose geometric range satisfies the selection criteria. In the preceding example, the auto model selector program would choose ModelName.2.
You must specify both length (l) and width (w) on the device instance line to enable automatic model selection.
Output Parameters
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weff (m)
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Effective channel width (alias lv2).
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leff (m)
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Effective channel length (alias lv1).
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rseff (Ohm)
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Effective source resistance (alias lv16).
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rdeff (Ohm)
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Effective drain resistance (alias lv17).
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aseff (m^2)
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Effective source area (alias=lv4).
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adeff (m^2)
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Effective drain area (alias=lv3).
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pseff (m)
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Effective source perimeter (alias=lv12).
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pdeff (m)
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Effective drain perimeter (alias=lv11).
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Operating-Point Parameters
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type=n
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Transistor type. Possible values are n or p.
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region=triode
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Estimated operating region. Spectre generates output number (0-3) in a rawfile. Possible values are off, triode, sat, or subth.
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reversed
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Reverse mode indicator. Possible values are no or yes.
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ids (A)
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Resistive drain-to-source current.
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vgs (V)
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Gate-source voltage (alias lx2).
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vds (V)
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Drain-source voltage (alias lx3).
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vbs (V)
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Bulk-source voltage (alias lx1).
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vp (V)
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Pinchoff voltage.
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vth (V)
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Threshold voltage.
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vdss (V)
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Drain-source saturation voltage.
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gm (S)
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Common-source transconductance (alias lx7).
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gds (S)
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Common-source output conductance (alias lx8).
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gmbs (S)
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Body-transconductance (alias lx9).
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nfac
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Slope factor.
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if (A)
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Forward current.
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ir (A)
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Reverse current.
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irprime (A)
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Reverse current.
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isub (A)
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Substrate Current.
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ibd (A)
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Bulk-drain junction current.
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ibs (A)
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Bulk-source junction current.
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pwr (W)
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Power at op point.
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gmoverid (1/V)
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`Gm'/`Ids'.
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gamma (sqrt(V))
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Body-effect parameter.
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cjd (F)
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Drain-bulk junction capacitance (alias lx29).
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cjs (F)
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Source-bulk junction capacitance (alias lx28).
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cgg (F)
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Gate-gate capacitance.
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cgd (F)
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Gate-drain capacitance (alias lx19).
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cgs (F)
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Gate-source capacitance (alias lx20).
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cgb (F)
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Gate-bulk capacitance.
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cdg (F)
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Drain-gate capacitance (alias lx32).
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cdd (F)
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Drain-drain capacitance (alias lx33).
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cds (F)
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Drain-source capacitance (alias lx34).
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cdb (F)
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Drain-bulk capacitance.
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csg (F)
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Source-gate capacitance.
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csd (F)
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Source-drain capacitance.
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css (F)
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Source-source capacitance.
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csb (F)
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Source-bulk capacitance.
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cbg (F)
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Bulk-gate capacitance (alias lx21).
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cbd (F)
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Bulk-drain capacitance (alias lx22).
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cbs (F)
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Bulk-source capacitance (alias lx23).
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cbb (F)
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Bulk-bulk capacitance.
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vm (V)
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Early voltage.
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vovrdr (V)
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Overdrive voltage.
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tau (s)
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NQS time constant.
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tau0 (s)
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Intrinsic time constant.
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ron (Ohm)
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On-resistance.
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Related Topics
EKV MOSFET Model (ekv)
Model Equations
Model Usage
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