Device Structure

BSIMSOI device’s typical structure is shown in the following figure.

In the floating body configuration, there are four external biases: drain voltage (Vd), gate voltage (Vg), source voltage (Vs) and backgate voltage (Ve). The voltage of floating body is solved by iterating in circuit simulation. If body contact is applied, there is one mode external bias: bulk voltage (Vp).

Since the backgate is decoupled by the isolated layer, there are three models to describe the behaviors of the floating body (selected by model parameter ‘soimod’):

• PD mode (soimod=0): the body potential is independent for ?Vbi;
• DD mode (soimod=1): both ?Vbi and body current/charge are concerned to capture the floating body behavior;
• FD mode (soimod=2): the body potential is equal to ?vbi

Auto mode (soimod=3): determine the floating body model by with model parameters automatically.

Related Topics

BSIMSOI MOSFET Model (bsimsoi)