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BSIMSOI MOSFET Model (bsimsoi)
The BSIMSOI model is a Silicon-on-Insulator (SOI) MOSFET model. It was developed by the BSIM/SOI modeling group at the University of California, Berkeley.
There are two modes in BSIMSOI depending on the value of soiMod:
-
PD mode (
soiMod=0), where the body potential is independent of ΔVbi (VBS>ΔVbi). Hence the calculation of ΔVbi is skipped in this mode. -
DD (Unified) mode (
soiMod=1), where both ΔVbi and body current/charge are calculated to capture the floating-body behavior exhibited in FD devices. -
FD mode (
soiMod=2), where the body potential is equal to ΔVbi. Hence the calculation of body current/charge, which is essential to the PD model, is skipped.
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