35

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Surface Potential Based Compact MOSFET Model (spmos)

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This chapter contains the following information about the SPMOS model:

• Core Model
  • Equivalent Circuit
  • Lateral Gradient Factor
  • Effective Drain-Source Voltage
  • Surface Potential
  • Quantum Mechanical Corrections
  • Polysilicon Depletion
  • Drain Current
  • Intrinsic Charges
  • Bias-Dependent Body Factor
• Extrinsic Model
  • Charge Model
  • Gate Current Model
  • Substrate Current Model
  • Total Terminal Currents
  • Noise Model
  • Gate Induced Drain/Source Leakage Current Model
• Parameter Descriptions
  • New Parameters for SPMOS Version 34
  • Parameters with Different Default Values for SPMOS Version 34

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