Product Documentation
Spectre Circuit Simulator Components and Device Models Reference
Product Version 23.1, June 2023

Component Statements

This device is supported within altergroups.

Instance Parameters

trise=0.0

Difference sim. temp and device temp, [C deg].

dtemp=0.0

Alias of trise.

temp=25.0

Device temp (only used if Trise is zero) [C].

m=1.0

Multiplicity factor.

isnoisy=yes

Should device generate noise.
Possible values are yes and no.

Model Parameters

noise=1

Globally disable noise.

noimod=0

Noise model (0=def, 1=PRC).

selft=0

Flag for self-heating.

idsmod=0

Ids Current Model [0:3].

igmod=0

Select gate diode model [0:1].

capmod=2

Select cap model [0:4].

ipk0=0.05

Current for max. transconductance Ipk [A].

vpks=(-0.2)

Gate voltage Vpk for max transconductance [V].

dvpks=0.2

Delta gate voltage at peak gm [V].

p1=0.8

Polynomial coeff P1 for channel current [1/V].

p2=0.0

Polynomial coeff P2 for channel current [1/V^2].

p3=0.0

Polynomial coeff P3 for channel current [1/V^3].

alphar=0.1

Saturation parameter alpha_r [1/V].

alphas=1.0

Saturation parameter alpha [1/V].

vkn=4.0

Knee voltage [V].

lambda=0.001

Channel length modulation parameter.

lambda1=0.0

Channel length modulation parameter.

lvg=0.0

Coeff for channel length modulation parameter.

b1=0.1

Unsaturated coeff B1 for P1.

b2=4.0

Saturated coeff B2 for P1 [1/V].

lsb0=0.0

Soft breakdown model parameter.

vtr=50.0

Soft breakdown model parameter [V].

vsb2=0.0

Surface breakdown model parameter [V].

ebd=0.2

Surface breakdown model parameter [1/V].

cds=0

Zero-bias D-S junction capacitance [F].

cgspi=0.0

Gate-source pinch-off capacitance [F].

cgs0=0.0

Gate-source capacitance parameter [F].

cgdpi=0.0

Gate-drain pinch-off capacitance [F].

cgdpe=0

External G-D Capacitor [F].

cgd0=0.0

Gate-drain capacitance parameter Cgdo [F].

p10=0.0

Polynomial coeff P10 for capacitance.

p11=1.0

Polynomial coeff P11 for capacitance.

p20=0.0

Polynomial coeff P20 for capacitance.

p21=0.2

Polynomial coeff P21 for capacitance.

p30=0.0

Polynomial coeff P30 for capacitance.

p31=0.2

Polynomial coeff P31 for capacitance.

p40=0.0

Polynomial coeff P40 for capacitance.

p41=1.0

Polynomial coeff P41 for capacitance.

p111=0.0

Polynomial coeff P111 for capacitance.

p222=0.0

Polynomial coeff P222 for capacitance.

m=0.5

Coefficient for capacitance .

ij=0.00005

Gate fwd saturation current [A].

pg=15.0

Gate current parameter.

ne=1.0

Gate p-n emission coeff.

vjg=0.7

Gate current parm [V].

rg=0.05

Gate ohmic resistance [Ohm].

rd=0.05

Drain ohmic resistance [Ohm].

rd2=0.0

Variable Drain ohmic resistance [Ohm].

ri=0.05

Input resistance [Ohm].

rs=0.05

Source ohmic resistance [Ohm].

rgd=0.05

Gate resistance [Ohm].

ld=0

Drain ohmic inductance [H].

ls=0

Source ohmic inductance [H].

lg=0

Gate ohmic inductance [H].

tau=0

Device delay [s].

rcmin=1.0e3

Min value of Rc [Ohm].

rc=10.0e3

R for freq dep output cond [Ohm].

crf=0.0

C for freq dep output cond [F].

rcin=100.0e3

R for freq dep input cond [Ohm].

crfin=0.0

C for freq dep input cond[F].

rdel=1

R for freq dep input cond [Ohm].

cdel=0.0

C for freq dep input cond[F].

kbgate=0.00

Polynomial coeff Kbgate  for freq dep input cond [1/V].

rtherm=0.001

Thermal resistance [K/W].

rth=0.001

Thermal resistance [K/W].

ctherm=0.0001

Thermal capacitance [Ws/K].

cth=0.0001

Thermal capacitance [Ws/K].

tcipk0=(-0.002)

Linear temp coef TIpk for Ipk [1/K].

tcp1=(-0.002)

Linear temp coef TIpk for Ipk [1/K].

tccgs0=0.002

Linear temp coef for Cgs0 [1/K].

tccgd0=0.002

Linear temp coef for Cgd0 [1/K].

tclsb0=0.0

Linear temp coef for Lsb0 [1/K].

tcrc=0.0

Linear temp coef for Rc [1/K].

tccrf=0.0

Linear temp coef for Crf [1/K].

tcrs=0.003

Linear temp coef for Rs [1/K].

tcrtherm=0.002

Linear temp coef for Rth [1/K].

kbdgate=1.0

Gate breakdown  parm [V].

vbdgs=5.0

Gate source breakdown  voltage [V].

vbdgd=20.0

Gate drain breakdown  voltage [V].

pbdg=0.5

Gate  breakdown exponent [1/V].

noiser=0.5

Gate noise coeff.

noisep=1.0

Gate noise coeff.

noisec=0.9

Gate-drain noise coeff.

fnc=0.0

Noise corner freq [Hz].

kf=0.0

Flicker noise coeff.

af=1.0

Flicker noise exponent.

ffe=1.0

Flicker noise parameter.

tg=25.0

Equiv temp [C].

td=25.0

Equiv temp [C].

td1=0.1

Equiv temp [C].

tmn=1.0

noise fitting coeff.

klf=1.0e14

Flicker noise exponent.

fgr=60.0e3

G-R freq corner [Hz].

np=0.3

flicker noise freq exp.

lw=0.1

effective gate noise width [mm].

tnom=25.0

param meas T [C].

version=2.3

The available version is 2.30(2.3.0).

p10pk=4

Polynomial coeff P10pk for capacitance.

krfdc=1.0001

Coeff KRFDC will set division between Ids and Dispersion IdsRF current.

tcvpk=0.001

Linear temp coef for Vpk [1/K].

tcvjg=(-0.001)

Linear temp coef for Vjg [1/K].

trise=0.0 C

Temperature rise from ambient alias of dtemp. It serves as the default value of instance trise.

Output Parameters

tempeff

Effective temperature for a single device.

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

pwr (W)

Power at op point.

ids (A)

Drain-source current.

igs (A)

Gate-source current.

igd (A)

Gate-drain current.

dTjunc (C)

Delta T.

Cgssim (F)

Gate-source capacitance.

Cgdsim (F)

Gate-drain capacitance.

Related Topics

Angelov GaN Model

Model Equations

Release History and Version

Model Usage

Component Statements


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