Model Version Updates
Version 1.2:
- Upper limit of the model parameter FGEO is now infinity.
- Four or five terminals can be used with the latest version model, corresponding "tnode" is set as internal or external.
- Flag FLSH introduced for controlling self-heating calculation.
- All series resistors and RTH are limited to a minimum value.
- ddx() operator used with QJMOD and QJMODF wherever required.
- Substrate transistor transfer current has been added.
- Hyperbolic smoothing is used in rbi computation to a void divide-by-zero.
Version 1.3
-
Modification done at TUD: Third order polynomial is solved for transfer current. It can be turned on by setting
IT_MOD=1. -
Added voltage dependent Reverse Early voltage. Parameter
averdescribes voltage dependence. -
Parameters
ZETAVER,ZETAVGBE,VGBEdescribe temperature dependence ofVERandIQF. -
Added temperature dependence for
IQFHandTFH.ALIQFHandKIQFHare used to model a second order temperature model. ParameterTEF_TEMP=0turns off the temperature dependence forTEF0. -
Corrected SPICE name for
AHQandZETAIQF. The original name isAHQXandZETIQF, which are also valid aliases. -
Implemented a
gminbetween nodesCIandEI. -
qjis now limited to positive values to improve convergence at negative bias. - Resolved a convergence issue for cc a calculation of voltage dependence of t0
Version 1.3.1
- NQS effects have been added and can be activated by using the flag FLNQS=1.
- Some operating point outputs have been added to the Va code.
Version 1.3.2
-
A new parameter
typehas been implemented to specify the transistor type. This parameter replaces thepnpandnpnmodel parameters, which are not supported in version 1.32. In addition, thetypeparameter is not supported in previous versions. - While lodading the parasitic substrate transistor transfer current, the current is multiplied by type in version 1.32.
Related Topics
Charge formulation of the internal transistor
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