Version Update and Enhancements

Version 107 Enhancements

The following enhancements have been made in version 107:

• Kink due to large PSATB values.
• Enhanced Gm/Id tuning flexibility in weak inversion region.
• Flexibility of tuning Cgg in strong inversion for .
• Fixed negative Cbg issue for CVMOD=0.
• Flexibility of tuning Cgg in accumulation.
• Added temperature dependence for the parameter EU.
• Changed the default value of the parameter LH.
• Valid condition for L <= LH.
• Warning message for FNOIMOD=1.
• Enhanced BSIMBULK flicker noise tuning flexibility.
• Evaluation of K2_EDGE and ETA0_EDGE independent of STI stress model.
• Device type implementation in sub-surface leakage model.
• Corrected abnormal flicker noise performance when EDGEFET=1.
• Aligned BSIMBULK 1/f behavior with BSIM4 1/f behavior.
• Corrected implementation of sub-surface leakage model.
• Enhanced the tuning flexibility in the flicker noise model.
• Added flicker noise due to EDGEFET.
• Fixed discrepancy in thermal noise model.
• There will be no impact of non-zero C0 on thermal noise.
• Fixed issue caused during PSS simulation. Esatnoi and Nt parameters will be set before they are used.
• Implementation of ABULK is updated.
• phib and gam are replaced by phibCV and gamCV respectively in CVMOD=1.
• NDEPEDGE and its binning.
• Fixed node collapsing and updated minimum value of Rdrain/Rsource.
• GDS Op-pt definition.
• Incorrect IGBBACC behavior in the accumulation region.
• Enhancement for High Voltage modeling.
• Warning message for .
• Range of model parameters.
• Default value of NDEPEDGE.
• Kink in DC current due to PSATB.
• Rollback MNUD and MNUD1 from thermal noise model.
• Addressed IGBACC issue.
• Added GMIN across D-B and S-B junctions.
• Missing type in sub-surface leakage model.
• External/internal node issue in sub-surface leakage model.
• HVMOD issue- CV model.
• Secondary impact ionization in HVMOD.
• Implemented sigvds in flicker_noise.

Version 106.2 Enhancements

The following enhancements have been made in version 106.2:

• Removed all the ifdef statements from the code.
• Node collapsing has been done for the nodes t and N1 for SHMOD = 0 and TNOIMOD = 0.
• Every IF and else statement starts with begin and ends with the end statement.
• Modified the name of the parameter MULUO to MULU0.
• Name of the Variable T13 has modified to Weff_SH in the code.
• Modified Flicker noise model which can also model the flicker noise trends for Halo transistors.
• MNUD model to increase flexibility in IDS – VDS fitting.
• Improved Gamma behavior in the linear Region for TNOIMOD = 1.
• Modified Thermal noise model to tune NF50 in Subthreshold region and to achieve ideal trend of gamma for long channel transistors.
• Clamping added in IGD and IGS.
• Sign correction in charge calculations.
• Added Self-Heating output variables.
• Deactivated node T when RTH0 or SHMOD or both are zero.
• Used SRCFLAG as the formal argument of BSIM6RdsEndSha and BSIM6RdseffGeo in place of TYPE.
• Modified Calculations of Geometry-dependent source/drain resistance.
• Added devsign in Operating point VTH expression.
• Limit (Weff + WTH0) to (Weff + WTH0) > 0 in Self Heating module.
• Changes made in the macros definition.
• Module name has changed from bsim6 to bsimbulk.
• Absence of CLM and velocity saturation terms in Charge expressions in manual.
• Parameter DVTP0 has Re-Defined in Manual.
• Added binning parameters in the EDGEFET parameters.
• Default value of EDGEFET parameter has changed to 0 from 1.
• Modified the expression of built in potential.
• DTEMP, MULU0, DELVTO and IDS0MULT have modified to both instance and model parameters.
• Removed all the ifdef statements from the code.
• Added units and descriptions for all the parameters.
• Added modified function of VDSX to avoid negative GDS issue.
• Removed clamping from UCR.
• Added protection to the following parameters: LP1, LP2, NJS, NJD, XJBV S and XJBV D.

Version 6.1.1 Enhancements

The following enhancements have been made in version 6.1.1:

• Threshold voltage model for operating point information has been added.
• EDGE FET model (Subthreshold hump module) has been added.
• An External Thermal node has been added
• Mobility scaling model similar to BSIM4 has been added, which is accessible through MOBSCALE=1.
• Asymmetry Mode has been added, which is accessible through Asymmetry_mode=0/1
• Parameter DELVT0 has been added for process variation.
• Well proximity effect similar to BSIM4 has been added.
• NF is multiplied with the effective width in the thermal noise model.
• Clamping of UC has been removed.

Related Topics

BSIM6 Model (bsim6)

Instance

Model

Model Equations

Component Statements for BSIM6

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