|
type
|
n
|
Transistor type.Possible values are p and n.
|
|
version
|
6.00
|
The model parameter "version" accepts only a real number value, such as 6.00 for version=6.0.0. The available versions for the bsim6 model are 6.00(6.0.0), 6.10(6.1.0), 6.11(6.1.1), 106.2(Bsimbulk 106.2.0), 107.0(Bsimbulk 107.0), and 107.10(Bsimbulk 107.1.0)..
|
|
compatible
|
spectre
|
Compatibility parameters.Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice and mica.
|
|
gmin_compatible
|
spectre
|
Choose gmin compatibility of model, possible values are 'spectre'(default) and 'cmc'.Possible values are spectre, cmc and hspice.
|
|
vthmod
|
0
|
Vth output selector. 'std' outputs model equation Vth. 'vthcc' outputs constant current Vth, and may impact simulation performance. The default value is taken from the options parameter 'vthmod'.Possible values are std and vthcc.
|
|
ivth
|
0.0 A
|
Vth current parameter. The default value is taken from the options parameter 'ivthn' or 'ivthp', depending on the type of the model.
|
|
ivthw
|
0.0 m
|
Width offset for constant current Vth. The default value is taken from the options parameter 'ivthw'.
|
|
ivthl
|
0.0 m
|
Length offset for constant current Vth. The default value is taken from the options parameter 'ivthl'.
|
|
ivth_vdsmin
|
0.05 V
|
Minimum Vds in constant current Vth calculating. The default value is taken from the options parameter 'ivth_vdsmin'.
|
|
vdsatmod
|
0
|
Vdsat output selector. Possible values are std, gds, and slow_gds.Possible values are std, gds and slow_gds.
|
|
vdsat_c
|
0.0
|
Coefficient for Gds based Vdsat.
|
|
vdsat_vdl
|
0.0
|
Coefficient for Gds based Vdsat.
|
|
vdsat_vadj
|
0.0
|
Coefficient for Gds based Vdsat.
|
|
minr
|
0.001
|
Minr.
|
|
cvmod
|
0
|
0: Consistent I-V/C-V, 1: Different I-V/C-V.
|
|
covmod
|
0
|
0: Use bias-independent overlap capacitances, 1: Use bias-dependent overlap capacitances.
|
|
rdsmod
|
0
|
0: Internal bias-dependent and external bias-independent S/D resistance model, 1: External S/D resistance model, 2: Internal S/D resistance model.
|
|
wpemod
|
0
|
Model flag for WPE.
|
|
asymmod
|
0
|
0: Asymmetry model turned off - forward mode parameters used, 1: Asymmetry model turned on.
|
|
gidlmod
|
0
|
0: Turn off GIDL current, 1: Turn on GIDL current.
|
|
igcmod
|
0
|
0: Turn off Igc, Igs and Igd, 1: Turn on Igc, Igs and Igd.
|
|
igbmod
|
0
|
0: Turn off Igb, 1: Turn on Igb.
|
|
tnoimod
|
0
|
Thermal noise model selector.
|
|
shmod
|
0
|
0: Self heating model selector, 1: Turn on self heating model.
|
|
mobscale
|
0
|
Mobility scaling model, 0: Old Model, 1: New Model.
|
|
tmemod
|
0
|
|
|
xgw
|
0.0 m
|
Distance from gate contact centre to dev edge.
|
|
llong
|
1.0e-5 m
|
L of extracted long channel device.
|
|
lmlt
|
1.0
|
Length shrinking parameter.
|
|
wmlt
|
1.0
|
Width shrinking parameter.
|
|
xl
|
0.0 m
|
L offset for channel length due to mask/etch effect.
|
|
wwide
|
1.0e-5 m
|
W of extracted wide channel device.
|
|
xw
|
0.0 m
|
W offset for channel width due to mask/etch effect.
|
|
lint
|
0.0 m
|
Delta L for I-V.
|
|
ll
|
0.0 m^(1+lln)
|
Length reduction parameter.
|
|
lw
|
0.0 m^(1+lwn)
|
Length reduction parameter.
|
|
lwl
|
0.0 m^(1+lln+lwn)
|
Length reduction parameter.
|
|
lln
|
1.0
|
Length reduction parameter.
|
|
lwn
|
1.0
|
Length reduction parameter.
|
|
wint
|
0.0 m
|
Delta W for I-V.
|
|
wl
|
0.0 m^(1+wln)
|
Width reduction parameter.
|
|
ww
|
0.0 m^(1+wwn)
|
Width reduction parameter.
|
|
wwl
|
0.0 m^(1+wwn+wln)
|
Width reduction parameter.
|
|
wln
|
1.0
|
Width reduction parameter.
|
|
wwn
|
1.0
|
Width reduction parameter.
|
|
dlc
|
0.0 m
|
Delta L for C-V.
|
|
llc
|
0.0 m^(1+lln)
|
Length reduction parameter.
|
|
lwc
|
0.0 m^(1+lwn)
|
Length reduction parameter.
|
|
lwlc
|
0.0 m^(1+lln+lwn)
|
Length reduction parameter.
|
|
dwc
|
0.0 m
|
Delta W for C-V.
|
|
wlc
|
0.0 m^(1+wln)
|
Width reduction parameter.
|
|
wwc
|
0.0 m^(1+wwn)
|
Width reduction parameter.
|
|
wwlc
|
0.0 m^(1+wwn+wln)
|
Width reduction parameter.
|
|
toxe
|
3.0e-9 m
|
Effective gate dielectric thickness relative to SiO2.
|
|
toxp
|
3.0e-9 m
|
Physical gate dielectric thickness. If not given, toxp is calculated from toxe and dtox.
|
|
dtox
|
0.0 m
|
Difference between effective dielectric thickness and physical thickness.
|
|
ndep
|
1e24 1/m3
|
Channel doping concentration for I-V.
|
|
ndepl1
|
0.0 m
|
Length dependence coefficient of ndep.
|
|
ndeplexp1
|
1.0
|
Length dependence exponent coefficient of ndep.
|
|
ndepl2
|
0.0 m
|
Length dependence of NDEP - for short channel devices.
|
|
ndeplexp2
|
2.0
|
Length dependence exponent coefficient of ndep.
|
|
ndepw
|
0.0 m
|
Width dependence coefficient of ndep.
|
|
ndepwexp
|
1.0
|
Width dependence exponent coefficient of ndep.
|
|
ndepwl
|
0.0 m2
|
Width-length dependence coefficient of ndep.
|
|
ndepwlexp
|
1.0
|
Width-length dependence exponent coefficient of ndep.
|
|
lndep
|
0.0 1/m2
|
Length dependence of NDEP.
|
|
wndep
|
0.0 1/m2
|
Width dependence of NDEP.
|
|
pndep
|
0.0 1/m
|
Area dependence of NDEP.
|
|
ndepcv
|
1e24 1/m3
|
Channel doping concentration for C-V.
|
|
ndepcvl1
|
0.0 m
|
Length dependence coefficient of ndepcv.
|
|
ndepcvlexp1
|
1.0
|
Length dependence exponent coefficient of ndepcv.
|
|
ndepcvl2
|
0.0 m
|
Length dependence coefficient of ndepcv - for short channel devices.
|
|
ndepcvlexp2
|
2.0
|
Length dependence exponent coefficient of ndepcv.
|
|
ndepcvw
|
0.0 m
|
Width dependence coefficient of ndepcv.
|
|
ndepcvwexp
|
1.0
|
Width dependence exponent coefficient of ndepcv.
|
|
ndepcvwl
|
0.0 m2
|
Width-length dependence coefficient of ndepcv.
|
|
ndepcvwlexp
|
1.0
|
Width-length dependence exponent coefficient of ndepcv.
|
|
lndepcv
|
0.0 1/m2
|
Length dependence of NDEP for C-V.
|
|
wndepcv
|
0.0 1/m2
|
Width dependence of NDEP for C-V.
|
|
pndepcv
|
0.0 1/m
|
Area dependence of NDEP for C-V.
|
|
ngate
|
5e25 1/m3
|
Gate doping concentration.
|
|
lngate
|
0.0 1/m2
|
Length dependence of NGATE.
|
|
wngate
|
0.0 1/m2
|
Width dependence of NGATE.
|
|
pngate
|
0.0 1/m
|
Area dependence of NGATE.
|
|
easub
|
4.05 eV
|
Electron affinity of substrate.
|
|
ni0sub
|
1.1e16 1/m3
|
Intrinsic carrier concentration of the substrate at 300.15K.
|
|
bg0sub
|
1.17 eV
|
Bandgap of substrate at 300.15K.
|
|
epsrsub
|
11.9
|
Relative dielectric constant of the channel material.
|
|
epsrox
|
3.9
|
Relative dielectric constant of the gate dielectric.
|
|
xj
|
1.5e-7 m
|
S/D junction depth.
|
|
lxj
|
0.0 m2
|
Length dependence of XJ.
|
|
wxj
|
0.0 m2
|
Width dependence of XJ.
|
|
pxj
|
0.0 m3
|
Area dependence of XJ.
|
|
vfb
|
(-1.0) V
|
Flatband voltage.
|
|
lvfb
|
0.0 V m
|
Length dependence of VFB.
|
|
wvfb
|
0.0 V m
|
Width dependence of VFB.
|
|
pvfb
|
0.0 V m2
|
Area dependence VFB.
|
|
vfbl
|
0.0 m
|
Length dependence coefficient of VFBCV.
|
|
vfblexp
|
1.0
|
Length dependence exponent coefficient of VFBCV.
|
|
vfbw
|
0.0 m
|
Width dependence coefficient of VFBCV.
|
|
vfbwexp
|
1.0
|
Width dependence exponent coefficient of VFBCV.
|
|
vfbwl
|
0.0 m2
|
Width-length dependence coefficient of VFBCV.
|
|
vfbwlexp
|
1.0
|
Width-length dependence exponent coefficient of VFBCV.
|
|
vfbcv
|
(-1.0) V
|
Flatband voltage for C-V.
|
|
lvfbcv
|
0.0 V m
|
Length dependence of VFBCV.
|
|
wvfbcv
|
0.0 V m
|
Width dependence of VFBCV.
|
|
pvfbcv
|
0.0 V
|
Area dependence VFBCV.
|
|
vfbcvl
|
0.0 m
|
Length dependence coefficient of vfbcv.
|
|
vfbcvlexp
|
1.0
|
Length dependence exponent coefficient of vfbcv.
|
|
vfbcvw
|
0.0 m
|
Width dependence coefficient of vfbcv.
|
|
vfbcvwexp
|
1.0
|
Width dependence exponent coefficient of vfbcv.
|
|
vfbcvwl
|
0.0 m2
|
Width-length dependence coefficient of vfbcv.
|
|
vfbcvwlexp
|
1.0
|
Width-length dependence coefficient of vfbcv.
|
|
permod
|
1
|
Whether ps/pd (when given) include gate-edge perimeter.
|
|
dwj
|
0.0 m
|
Delta W for S/D junctions.
|
|
nsd
|
1e26 1/m3
|
S/D doping concentration.
|
|
lnsd
|
0.0 1/m2
|
Length dependence of NSD.
|
|
wnsd
|
0.0 1/m2
|
Width dependence of NSD.
|
|
pnsd
|
0.0 1/m
|
Area dependence of NSD.
|
|
delvt0
|
0.0
|
Zero bias threshold voltage variation.
|
|
dvtp0
|
0.0 m
|
First coefficient of drain-induced vth shift for long-channel pocket devices.
|
|
ldvtp0
|
0 m2
|
Length dependence of DVTP0.
|
|
wdvtp0
|
0 m2
|
Width dependence of DVTP0.
|
|
pdvtp0
|
0 m3
|
Area dependence of DVTP0.
|
|
dvtp1
|
0.0 1/V
|
Second coefficient of drain-induced Vth shift for long-channel pocket devices.
|
|
ldvtp1
|
0 m/V
|
Length dependence of DVTP1.
|
|
wdvtp1
|
0 m/V
|
Width dependence of DVTP1.
|
|
pdvtp1
|
0 m2/V
|
Area dependence of DVTP1.
|
|
dvtp2
|
0.0 m V
|
3rd parameter for vth shift due to pocket.
|
|
ldvtp2
|
0 m2/V
|
Length dependence of DVTP2.
|
|
wdvtp2
|
0 m2/V
|
Width dependence of DVTP2.
|
|
pdvtp2
|
0 m3/V
|
Area dependence of DVTP2.
|
|
dvtp3
|
0.0
|
4th parameter for vth shift due to pocket.
|
|
ldvtp3
|
0 m
|
Length dependence of DVTP3.
|
|
wdvtp3
|
0 m
|
Width dependence of DVTP3.
|
|
pdvtp3
|
0 m2
|
Area dependence of DVTP3.
|
|
dvtp4
|
0.0 1/V
|
5th parameter for vth shift due to pocket.
|
|
ldvtp4
|
0 m/V
|
Length dependence of DVTP4.
|
|
wdvtp4
|
0 m/V
|
Width dependence of DVTP4.
|
|
pdvtp4
|
0 m2/V
|
Area dependence of DVTP4.
|
|
dvtp5
|
0.0 V
|
6th parameter for vth shift due to pocket.
|
|
ldvtp5
|
0 m V
|
Length dependence of DVTP5.
|
|
wdvtp5
|
0 m V
|
Width dependence of DVTP5.
|
|
pdvtp5
|
0 m2 V
|
Area dependence of DVTP5.
|
|
phin
|
0.045 V
|
Non-uniform vertical doping effect on surface potential.
|
|
lphin
|
0.0 m V
|
Length dependence of PHIN.
|
|
wphin
|
0.0 m V
|
Width dependence of PHIN.
|
|
pphin
|
0.0 m2 V
|
Area dependence of PHIN.
|
|
eta0
|
0.08
|
DIBL coefficient.
|
|
leta0
|
0.0 m
|
Length dependence of ETA0.
|
|
weta0
|
0.0 m
|
Width dependence of ETA0.
|
|
peta0
|
0.0 m2
|
Area dependence of ETA0.
|
|
eta0r
|
0.08
|
DIBL coefficient.
|
|
leta0r
|
0.0 m
|
Length dependence of ETA0R.
|
|
weta0r
|
0.0 m
|
Width dependence of ETA0R.
|
|
peta0r
|
0.0 m2
|
Area dependence of ETA0R.
|
|
dsub
|
1.0
|
Length scaling exponent for DIBL.
|
|
etab
|
(-0.07) 1/V
|
Body bias coefficient for subthreshold DIBL effect.
|
|
etabexp
|
1.0
|
Exponent coefficient of etab.
|
|
letab
|
0.0 m/V
|
Length dependence of ETAB.
|
|
wetab
|
0.0 m/V
|
Width dependence of ETAB.
|
|
petab
|
0.0 m2/V
|
Area dependence of ETAB.
|
|
k1
|
0.0 V^0.5
|
First-order body-bias Vth shift due to vertical non-uniform doping.
|
|
k1l
|
0.0
|
Length dependence coefficient of K1.
|
|
k1lexp
|
1.0
|
Length dependence exponent coefficient of K1.
|
|
k1w
|
0.0
|
Width dependence coefficient of k1.
|
|
k1wexp
|
1.0
|
Width dependence exponent coefficient of K1.
|
|
k1wl
|
0.0
|
Width-length dependence coefficient of K1.
|
|
k1wlexp
|
1.0
|
Width-length dependence exponent coefficient of K1.
|
|
lk1
|
0.0 m V^0.5
|
Length dependence of K1.
|
|
wk1
|
0.0 m V^0.5
|
Width dependence of K1.
|
|
pk1
|
0.0 m2 V^0.5
|
Area dependence of K1.
|
|
k2
|
0.0 V
|
Vth shift due to vertical non-uniform doping.
|
|
k2l
|
0.0 m^K2LEXP
|
Length dependence coefficient of k2.
|
|
k2lexp
|
1.0
|
Length dependence exponent coefficient of k2.
|
|
k2w
|
0.0 m^K2WEXP
|
Width dependence coefficient of k2.
|
|
k2wexp
|
1.0
|
Width dependence exponent coefficient of k2.
|
|
k2wl
|
0.0
|
Width-length dependence coefficient of k2.
|
|
k2wlexp
|
1.0
|
Width-length dependence exponent coefficient of k2.
|
|
lk2
|
0.0 m
|
Length dependence of K2.
|
|
wk2
|
0.0 m
|
Width dependence of K2.
|
|
pk2
|
0.0 m2
|
Area dependence of K2.
|
|
ados
|
0.0
|
Quantum mechanical effect pre-factor switch in inversion.
|
|
bdos
|
1.0
|
Charge centroid parameter - slope of C-V curve under QME in inversion.
|
|
qm0
|
1.0e-3
|
Charge centroid parameter - starting point for QME in inversion.
|
|
etaqm
|
0.54
|
Bulk charge coefficient for charge centroid in inversion.
|
|
cit
|
0.0 F/m2
|
Parameter for interface traps.
|
|
lcit
|
0.0 F/m
|
Length dependence of CIT.
|
|
wcit
|
0.0 F/m
|
Width dependence of CIT.
|
|
pcit
|
0.0 F
|
Area dependence of CIT.
|
|
nfactor
|
0.0
|
Subthreshold slope factor.
|
|
nfactorl
|
0.0 m^NFACTORLEXP
|
Length dependence coefficient of nfactor.
|
|
nfactorlexp
|
1.0
|
Length dependence exponent coefficient of nfactor.
|
|
nfactorw
|
0.0 m^NFACTORWEXP
|
Width dependence coefficient of nfactor.
|
|
nfactorwexp
|
1.0
|
Width dependence exponent coefficient of nfactor.
|
|
nfactorwl
|
0.0 m^(2 NFACTORWLEXP)
|
Width-length dependence coefficient of nfactor.
|
|
nfactorwlexp
|
1.0
|
Width-length dependence exponent coefficient of nfactor.
|
|
lnfactor
|
0.0 m
|
Length dependence of NFACTOR.
|
|
wnfactor
|
0.0 m
|
Width dependence of NFACTOR.
|
|
pnfactor
|
0.0 m2
|
Area dependence of NFACTOR.
|
|
cdscd
|
1e-9 F/m2 V
|
Drain bias sensitivity of subthreshold slope.
|
|
cdscdl
|
0.0 m^CDSCDLEXP
|
Length dependence coefficient of cdscd.
|
|
cdscdlexp
|
1.0
|
Length dependence exponent coefficient of cdscd.
|
|
lcdscd
|
0.0 F/m/V
|
Length dependence of CDSCD.
|
|
wcdscd
|
0.0 F/m/V
|
Width dependence of CDSCD.
|
|
pcdscd
|
0.0 F/V
|
Area dependence of CDSCD.
|
|
cdscdr
|
1e-9 F/m2 V
|
Drain bias sensitivity of subthreshold slope.
|
|
cdscdlr
|
0.0 m^CDSCDLEXP
|
Length dependence coefficient of CDSCDR.
|
|
lcdscdr
|
0.0 F/m V
|
Length dependence of CDSCDR.
|
|
wcdscdr
|
0.0 F/m V
|
Width dependence of CDSCDR.
|
|
pcdscdr
|
0.0 F/V
|
Area dependence of CDSCDR.
|
|
cdscb
|
0.0 F/m2 V
|
Body-bias sensitivity of subthreshold slope.
|
|
cdscbl
|
0.0 m^CDSCBLEXP
|
Length dependence coefficient of CDSCB.
|
|
cdscblexp
|
1.0
|
Length dependence exponent coefficient of CDSCB.
|
|
lcdscb
|
0.0 F/m/V
|
Length dependence of CDSCB.
|
|
wcdscb
|
0.0 F/m/V
|
Width dependence of CDSCB.
|
|
pcdscb
|
0.0 F/V
|
Area dependence of CDSCB.
|
|
vsat
|
1e5 m/s
|
Saturation velocity.
|
|
lvsat
|
0.0 m2/s
|
Length dependence of VSAT.
|
|
wvsat
|
0.0 m2/s
|
Width dependence of VSAT.
|
|
pvsat
|
0.0 m3/s
|
Area dependence of VSAT.
|
|
vsatl
|
0.0 m^VSATLEXP
|
Length dependence coefficient of VSAT.
|
|
vsatlexp
|
1.0
|
Length dependence exponent coefficient of VSAT.
|
|
vsatw
|
0.0 m^VSATWEXP
|
Width dependence coefficient of VSAT.
|
|
vsatwexp
|
1.0
|
Width dependence exponent coefficient of VSAT.
|
|
vsatwl
|
0.0 m^(2 VSATWLEXP)
|
Width-length dependence coefficient of VSAT.
|
|
vsatwlexp
|
1.0
|
Width-length dependence exponent coefficient of VSAT.
|
|
vsatr
|
1e5 m/s
|
Saturation velocity.
|
|
lvsatr
|
0.0 m2/s
|
Length dependence of VSATR.
|
|
wvsatr
|
0.0 m2/s
|
Width dependence of VSATR.
|
|
pvsatr
|
0.0 m3/s
|
Area dependence of VSATR.
|
|
delta
|
0.125 V
|
Smoothing function factor for Vdsat.
|
|
ldelta
|
0.0 m
|
Length dependence of DELTA.
|
|
wdelta
|
0.0 m
|
Width dependence of DELTA.
|
|
pdelta
|
0.0 m2
|
Area dependence of DELTA.
|
|
deltal
|
0.0 m^DELTALEXP
|
Length dependence coefficient of delta.
|
|
deltalexp
|
1.0
|
Length dependence exponent coefficient of delta.
|
|
vsatcv
|
1e5 m/s
|
VSAT parameter for C-V.
|
|
lvsatcv
|
0.0 m2/s
|
Length dependence of VSATCV.
|
|
wvsatcv
|
0.0 m2/s
|
Width dependence of VSATCV.
|
|
pvsatcv
|
0.0 m3/s
|
Area dependence of VSATCV.
|
|
vsatcvl
|
0.0 m^VSATCVLEXP
|
Length dependence coefficient of VSATCV.
|
|
vsatcvlexp
|
1.0
|
Length dependence exponent coefficient of VSATCV.
|
|
vsatcvw
|
0.0 m^VSATCVWEXP
|
Width dependence coefficient of VSATCV.
|
|
vsatcvwexp
|
1.0
|
Length dependence exponent coefficient of VSATCV.
|
|
vsatcvwl
|
0.0 m^(2 VSATCVWLEXP)
|
Width-length dependence coefficient of VSATCV.
|
|
vsatcvwlexp
|
1.0
|
Width-length dependence exponent coefficient of VSATCV.
|
|
up1
|
0.0
|
Mobility channel length coefficient.
|
|
lp1
|
1.0e-8
|
Mobility channel length exponential coefficient.
|
|
up2
|
0.0
|
Mobility channel length coefficient.
|
|
lp2
|
1.0e-8
|
Mobility channel length exponential coefficient.
|
|
mulu0
|
1.0
|
Multiplication factor for low field mobility.
|
|
u0
|
67.0e-3 m2/V/s
|
Low Field mobility.
|
|
u0l
|
0.0 m^U0LEXP
|
Length dependence coefficient of U0.
|
|
u0lexp
|
1.0
|
Length dependence exponential coefficient of u0.
|
|
lu0
|
0.0 m3/V/s
|
Length dependence of U0.
|
|
wu0
|
0.0 m3/V/s
|
Width dependence of U0.
|
|
pu0
|
0.0 m4/V/s
|
Area dependence of U0.
|
|
u0r
|
67.0e-3 m2/V/s
|
Reverse-mode Low Field mobility.
|
|
lu0r
|
0.0 m3/V/s
|
Length dependence of U0R.
|
|
wu0r
|
0.0 m3/V/s
|
Width dependence of U0R.
|
|
pu0r
|
0.0 m4/V/s
|
Area dependence of U0R.
|
|
etamob
|
1.0
|
Effective field parameter (should be kept close to 1).
|
|
ua
|
0.001 (m/V)^EU
|
Mobility reduction coefficient.
|
|
ual
|
0.0 m^UALEXP
|
Length dependence coefficient of UA.
|
|
ualexp
|
1.0
|
Length dependence exponent coefficient of UA.
|
|
uaw
|
0.0 m^UAWEXP
|
Width dependence coefficient of UA.
|
|
uawexp
|
1.0
|
Width dependence exponent coefficient of UA.
|
|
uawl
|
0.0 m^UAWLEXP
|
Width-length dependence coefficient of UA.
|
|
uawlexp
|
1.0
|
Width-length dependence coefficient of UA.
|
|
lua
|
0.0 m (m/V)^EU
|
Length dependence of UA.
|
|
wua
|
0.0 m (m/V)^EU
|
Width dependence of UA.
|
|
pua
|
0.0 m2 (m/V)^EU
|
Area dependence of UA.
|
|
uar
|
0.001 m/V
|
Reverse-mode mobility reduction coefficient.
|
|
luar
|
0.0 m (m/V)^EU
|
Length dependence of UAR.
|
|
wuar
|
0.0 m (m/V)^EU
|
Width dependence of UAR.
|
|
puar
|
0.0 m2 (m/V)^EU
|
Area dependence of UAR.
|
|
eu
|
1.5
|
Mobility reduction exponent.
|
|
leu
|
0.0 m
|
Length dependence of EU.
|
|
weu
|
0.0 m
|
Width dependence of EU.
|
|
peu
|
0.0 m2
|
Area dependence of EU.
|
|
eul
|
0.0 m^EULEXP
|
Length dependence coefficient of EU.
|
|
eulexp
|
1.0
|
Length dependence exponent coefficient of EU.
|
|
euw
|
0.0 m^EUWEXP
|
Width dependence coefficient of EU.
|
|
euwexp
|
1.0
|
Width dependence exponent coefficient of EU.
|
|
euwl
|
0.0 m^EUWLEXP
|
Width-length dependence coefficient of EU.
|
|
euwlexp
|
1.0
|
Width-length dependence coefficient of EU.
|
|
ud
|
0.001 1/m2
|
Coulomb scattering parameter.
|
|
udl
|
0.0 m^UDLEXP
|
Length dependence coefficient of UD.
|
|
udlexp
|
1.0
|
Length dependence exponent coefficient of UD.
|
|
lud
|
0.0 m
|
Length dependence of UD.
|
|
wud
|
0.0 m
|
Width dependence of UD.
|
|
pud
|
0.0 m2
|
Area dependence of UD.
|
|
udr
|
0.001 1/m2
|
Reverse-mode Coulomb scattering parameter.
|
|
ludr
|
0.0 m
|
Length dependence of UDR.
|
|
wudr
|
0.0 m
|
Width dependence of UDR.
|
|
pudr
|
0.0 m2
|
Area dependence of UDR.
|
|
ucs
|
2.0
|
Coulomb scattering parameter.
|
|
lucs
|
0.0 m
|
Length dependence of UCS.
|
|
wucs
|
0.0 m
|
Width dependence of UCS.
|
|
pucs
|
0.0 m2
|
Area dependence of UCS.
|
|
ucsr
|
2.0
|
Reverse-mode Coulomb scattering parameter.
|
|
lucsr
|
0.0 m
|
Length dependence of UCSR.
|
|
wucsr
|
0.0 m
|
Width dependence of UCSR.
|
|
pucsr
|
0.0 m2
|
Area dependence of UCSR.
|
|
uc
|
0.0 (m/V)^EU/V
|
Mobility reduction with body bias.
|
|
ucl
|
0.0 m^UCLEXP
|
Length dependence coefficient of UC.
|
|
uclexp
|
1.0
|
Length dependence exponent coefficient of UC.
|
|
ucw
|
0.0 m^UCWEXP
|
Width dependence coefficient of UC.
|
|
ucwexp
|
1.0
|
Width dependence exponent coefficient of UC.
|
|
ucwl
|
0.0 m^(2 UCWLEXP)
|
Width-length dependence coefficient of UC.
|
|
ucwlexp
|
1.0
|
Width-length dependence exponent coefficient.
|
|
luc
|
0.0 m (m/V)^EU/V
|
Length dependence of UC.
|
|
wuc
|
0.0 m (m/V)^EU/V
|
Width dependence of UC.
|
|
puc
|
0.0 m2 (m/V)^EU/V
|
Area dependence of UC.
|
|
ucr
|
0.0 (m/V)^EU/V
|
Reverse-mode mobility reduction with body bias.
|
|
lucr
|
0.0 m (m/V)^EU/V
|
Length dependence of UCR.
|
|
wucr
|
0.0 m (m/V)^EU/V
|
Width dependence of UCR.
|
|
pucr
|
0.0 m2 (m/V)^EU/V
|
Area dependence of UCR.
|
|
pclm
|
0.0
|
CLM pre_factor.
|
|
pclml
|
0.0 m^PCLMLEXP
|
Length dependence coefficient of PCLM.
|
|
pclmlexp
|
1.0
|
Length dependence exponent coefficient of PCLM.
|
|
lpclm
|
0.0 m
|
Length dependence of PCLM.
|
|
wpclm
|
0.0 m
|
Width dependence of PCLM.
|
|
ppclm
|
0.0 m2
|
Area dependence of PCLM.
|
|
pclmr
|
0.0
|
Reverse-mode CLM pre-factor.
|
|
lpclmr
|
0.0 m
|
Length dependence of PCLMR.
|
|
wpclmr
|
0.0 m
|
Width dependence of PCLMR.
|
|
ppclmr
|
0.0 m2
|
Area dependence of PCLMR.
|
|
pclmg
|
0.0 V
|
CLM pre-factor gate voltage dependence.
|
|
pclmcv
|
0.0
|
CLM parameter for C-V.
|
|
pclmcvl
|
0.0 m^PCLMLEXP
|
Length dependence coefficient of PCLMCV.
|
|
pclmcvlexp
|
1.0
|
Length dependence exponent coefficient of PCLMCV.
|
|
lpclmcv
|
0.0 m
|
Length dependence of PCLMCV.
|
|
wpclmcv
|
0.0 m
|
Width dependence of PCLMCV.
|
|
ppclmcv
|
0.0 m2
|
Area dependence of PCLMCV.
|
|
pscbe1
|
4.24e8 V/m
|
Substrate current body-effect coefficient.
|
|
lpscbe1
|
0.0 V
|
Length dependence of PSCBE1.
|
|
wpscbe1
|
0.0 V
|
Width dependence of PSCBE1.
|
|
ppscbe1
|
0.0 V m
|
Area dependence of PSCBE1.
|
|
pscbe2
|
1.0e-8 m/V
|
Substrate current body-effect coefficient.
|
|
lpscbe2
|
0.0 m2/V
|
Length dependence of PSCBE2.
|
|
wpscbe2
|
0.0 m2/V
|
Width dependence of PSCBE2.
|
|
ppscbe2
|
0.0 m3/V
|
Area dependence of PSCBE2.
|
|
pdits
|
0.0 1/V
|
Coefficient for drain-induced vth shifts.
|
|
lpdits
|
0.0 m/V
|
Length dependence of PDITS.
|
|
wpdits
|
0.0 m/V
|
Width dependence of PDITS.
|
|
ppdits
|
0.0 m2/V
|
Area dependence of PDITS.
|
|
pditsl
|
0.0 1/m
|
L dep of drain-induced vth shifts.
|
|
pditsd
|
0.0 1/V
|
Vds dep of drain-induced vth shifts.
|
|
lpditsd
|
0.0 m/V
|
Length dependence of PDITSD.
|
|
wpditsd
|
0.0 m/V
|
Width dependence of PDITSD.
|
|
ppditsd
|
0.0 m2/V
|
Area dependence of PDITSD.
|
|
rsh
|
0.0 Ω/square
|
Source-drain sheet resistances.
|
|
prwg
|
1.0 1/V
|
Gate bias dependence of S/D extension resistances.
|
|
lprwg
|
0.0 m/V
|
Length dependence of PRWG.
|
|
wprwg
|
0.0 m/V
|
Width dependence of PRWG.
|
|
pprwg
|
0.0 m2/V
|
Area dependence of PRWG.
|
|
prwb
|
0.0 1/V
|
Body bias dependence of resistances.
|
|
lprwb
|
0.0 m/V
|
Length dependence of PRWB.
|
|
wprwb
|
0.0 m/V
|
Width dependence of PRWB.
|
|
pprwb
|
0.0 m2/V
|
Area dependence of PRWB.
|
|
prwbl
|
0.0 m^PRWBLEXP
|
Length dependence coefficient of PPRWB.
|
|
prwblexp
|
1.0
|
Length dependence exponent coefficient of PPRWB.
|
|
wr
|
1.0
|
W dependence parameter of S/D extension resistances.
|
|
lwr
|
0.0 m
|
Length dependence of WR.
|
|
wwr
|
0.0 m
|
Width dependence of WR.
|
|
pwr
|
0.0 m2
|
Area dependence of WR.
|
|
rswmin
|
0.0 Ω μm^WR
|
Source resistance per unit width at high Vgs (RDSMOD=1).
|
|
lrswmin
|
0.0 ohm μm^(2 WR)
|
Length dependence of RSWMIN.
|
|
wrswmin
|
0.0 ohm μm^(2 WR)
|
Width dependence of RSWMIN.
|
|
prswmin
|
0.0 ohm μm^(3 WR)
|
Area dependence of RSWMIN.
|
|
rsw
|
10.0 Ω μm^WR
|
Zero bias source resistance (RDSMOD=1).
|
|
lrsw
|
0.0 ohm μm^(2 WR)
|
Length dependence of RSW.
|
|
wrsw
|
0.0 ohm μm^(2 WR)
|
Width dependence of RSW.
|
|
prsw
|
0.0 ohm μm^(3 WR)
|
Area dependence of RSW.
|
|
rswl
|
0.0 m^RSWLEXP
|
Geometrical scaling of RSW (RDSMOD=1).
|
|
rswlexp
|
1.0
|
Geometrical scaling of RSW (RDSMOD=1).
|
|
rdwmin
|
0.0 Ω μm^WR
|
Drain resistance per unit width at high Vgs (RDSMOD=1).
|
|
lrdwmin
|
0.0 ohm μm^(2 WR)
|
Length dependence of RDWMIN.
|
|
wrdwmin
|
0.0 ohm μm^(2 WR)
|
Width dependence of RDWMIN.
|
|
prdwmin
|
0.0 ohm μm^(3 WR)
|
Area dependence of RDWMIN.
|
|
rdw
|
0.0 Ω μm^WR
|
Zero bias drain resistance (RDSMOD=1).
|
|
lrdw
|
0.0 ohm μm^(2 WR)
|
Length dependence of RDW.
|
|
wrdw
|
0.0 ohm μm^(2 WR)
|
Width dependence of RDW.
|
|
prdw
|
0.0 ohm μm^(3 WR)
|
Area dependence of RDW.
|
|
rdwl
|
0.0 m^RDWLEXP
|
Geometrical scaling of rdw (rdsmod=1).
|
|
rdwlexp
|
1.0
|
Geometrical scaling of rdw (rdsmod=1).
|
|
rdswmin
|
0.0 Ω μm^WR
|
S/D Resistance per unit width at high Vgs (RDSMOD=0 and RDSMOD=2).
|
|
lrdswmin
|
0.0 ohm μm^(2 WR)
|
Length dependence of RDSWMIN.
|
|
wrdswmin
|
0.0 ohm μm^(2 WR)
|
Width dependence of RDSWMIN.
|
|
prdswmin
|
0.0 ohm μm^(3 WR)
|
Area dependence of RDSWMIN.
|
|
rdsw
|
20.0 Ω μm^WR
|
Zero bias resistance (RDSMOD=0 and RDSMOD=2).
|
|
rdswl
|
0.0 m^RDSWLEXP
|
Geometrical scaling of RDSW (RDSMOD=0 and RDSMOD=2).
|
|
rdswlexp
|
1.0
|
Geometrical scaling of RDSW (RDSMOD=0 and RDSMOD=2).
|
|
lrdsw
|
0.0 ohm μm^(2 WR)
|
Length dependence of RDSW.
|
|
wrdsw
|
0.0 ohm μm^(2 WR)
|
Width dependence of RDSW.
|
|
prdsw
|
0.0 ohm μm^(3 WR)
|
Area dependence of RDSW.
|
|
psat
|
1.0
|
Gmsat variation with gate bias.
|
|
lpsat
|
0.0 m
|
Length dependence of PSAT.
|
|
wpsat
|
0.0 m
|
Width dependence of PSAT.
|
|
ppsat
|
0.0 m2
|
Area dependence of PSAT.
|
|
psatl
|
0.0 m^PSATLEXP
|
Length dependence coefficient of PSATL.
|
|
psatlexp
|
1.0
|
Length dependence exponent coefficient of PSATLEXP.
|
|
psatb
|
0.0 1/V
|
Body bias effect on Idsat.
|
|
lpsatb
|
0.0 m/V
|
Length dependence of PSATB.
|
|
wpsatb
|
0.0 m/V
|
Width dependence of PSATB.
|
|
ppsatb
|
0.0 m2/V
|
Area dependence of PSATB.
|
|
psatr
|
1.0
|
Reverse-mode Gmsat variation with gate bias.
|
|
lpsatr
|
0.0 m
|
Length dependence of PSATR.
|
|
wpsatr
|
0.0 m
|
Width dependence of PSATR.
|
|
ppsatr
|
0.0 m2
|
Area dependence of PSATR.
|
|
psatx
|
1.0
|
Fine tuning of PTWG effect.
|
|
ptwg
|
0.0
|
Idsat variation with gate bias.
|
|
lptwg
|
0.0 m
|
Length dependence of PTWG.
|
|
wptwg
|
0.0 m
|
Width dependence of PTWG.
|
|
pptwg
|
0.0 m2
|
Area dependence of PTWG.
|
|
ptwgl
|
0.0 m^PTWGLEXP
|
Length dependence coefficient of PTWG.
|
|
ptwglexp
|
1.0
|
Length dependence exponent coefficient of ptwg.
|
|
ptwgr
|
0.0
|
Reverse-mode Idsat variation with gate bias.
|
|
lptwgr
|
0.0 m
|
Length dependence of PTWGR.
|
|
wptwgr
|
0.0 m
|
Width dependence of PTWGR.
|
|
pptwgr
|
0.0 m2
|
Area dependence of PTWGR.
|
|
ptwglr
|
0.0 m^PTWGLEXPR
|
Length dependence coefficient of PTWGR.
|
|
ptwglexpr
|
1.0
|
Length dependence exponent coefficient of PTWGR.
|
|
a1
|
0.0 1/V2
|
Non-saturation effect parameter for strong inversion region.
|
|
la1
|
0.0 m/V2
|
Length dependence of A1.
|
|
wa1
|
0.0 m/V2
|
Width dependence of A1.
|
|
pa1
|
0.0 m2/V2
|
Area dependence of A1.
|
|
a11
|
0.0
|
Temperature dependence of A1.
|
|
la11
|
0.0 m
|
Length dependence of A11.
|
|
wa11
|
0.0 m
|
Width dependence of A11.
|
|
pa11
|
0.0 m2
|
Area dependence of A11.
|
|
a2
|
0.0 1/V
|
Non-saturation effect parameter for moderate inversion region.
|
|
la2
|
0.0 m/V
|
Length dependence of A2.
|
|
wa2
|
0.0 m/V
|
Width dependence of A2.
|
|
pa2
|
0.0 m2/V
|
Area dependence of A2.
|
|
a21
|
0.0
|
Temperature dependence of A2.
|
|
la21
|
0.0 m
|
Length dependence of A21.
|
|
wa21
|
0.0 m
|
Width dependence of A21.
|
|
pa21
|
0.0 m2
|
Area dependence of A21.
|
|
pdiblc
|
0.0
|
Parameter for DIBL effect on rout.
|
|
pdiblcl
|
0.0 m^PDIBLCLEXP
|
Length dependence coefficient of PDIBLC.
|
|
pdiblclexp
|
1.0
|
Length dependence exponent coefficient of PDIBLC.
|
|
lpdiblc
|
0.0 m
|
Length dependence of PDIBLC.
|
|
wpdiblc
|
0.0 m
|
Width dependence of PDIBLC.
|
|
ppdiblc
|
0.0 m2
|
Area dependence of PDIBLC.
|
|
pdiblcr
|
0.0
|
Reverse-mode parameter for DIBL effect on rout.
|
|
pdiblclr
|
0.0 m^PDIBLCLEXPR
|
Length dependence coefficient of pdiblcr.
|
|
pdiblclexpr
|
1.0
|
Length dependence exponent coefficient of pdiblcr.
|
|
lpdiblcr
|
0.0 m
|
Length dependence of PDIBLCR.
|
|
wpdiblcr
|
0.0 m
|
Width dependence of PDIBLCR.
|
|
ppdiblcr
|
0.0 m2
|
Area dependence of PDIBLCR.
|
|
pdiblcb
|
0.0 1/V
|
Parameter for DIBL effect on rout.
|
|
lpdiblcb
|
0.0 m/V
|
Length dependence of PDIBLCB.
|
|
wpdiblcb
|
0.0 m/V
|
Width dependence of PDIBLCB.
|
|
ppdiblcb
|
0.0 m2/V
|
Area dependence of PDIBLCB.
|
|
pvag
|
1.0
|
Vg dependence of EARLY voltage.
|
|
lpvag
|
0.0 m
|
Length dependence of PVAG.
|
|
wpvag
|
0.0 m
|
Width dependence of PVAG.
|
|
ppvag
|
0.0 m2
|
Area dependence of PVAG.
|
|
fprout
|
0.0 V/m^0.5
|
Gds degradation factor due to pocket implants.
|
|
fproutl
|
0.0 m^FPROUTLEXP
|
Length dependence coefficient of fprout.
|
|
fproutlexp
|
1.0
|
Length dependence exponent coefficient of FPROUT.
|
|
lfprout
|
0.0 V m^0.5
|
Length dependence of FPROUT.
|
|
wfprout
|
0.0 V m^0.5
|
Width dependence of FPROUT.
|
|
pfprout
|
0.0 V m^1.5
|
Area dependence of FPROUT.
|
|
alpha0
|
0.0 m/V
|
First parameter of Iii.
|
|
alpha0l
|
0.0 m^ALPHA0LEXP
|
Length dependence coefficient of ALPHA0.
|
|
alpha0lexp
|
1.0
|
Length dependence exponent coefficient of ALPHA0.
|
|
lalpha0
|
0.0 m2/V
|
Length dependence of ALPHA0.
|
|
walpha0
|
0.0 m2/V
|
Width dependence of ALPHA0.
|
|
palpha0
|
0.0 m3/V
|
Area dependence of ALPHA0.
|
|
beta0
|
0.0 1/V
|
Vds dependent parameter of Iii.
|
|
lbeta0
|
0.0 m/V
|
Length dependence of BETA0.
|
|
wbeta0
|
0.0 m/V
|
Width dependence of BETA0.
|
|
pbeta0
|
0.0 m2/V
|
Area dependence of BETA0.
|
|
aigbacc
|
1.36e-2 (F s2/g)^0.5/m
|
Parameter for Igb in accumulation.
|
|
bigbacc
|
1.71e-3 (F s2/g)^0.5/m/V
|
Parameter for Igb in accumulation.
|
|
cigbacc
|
0.075 1/V
|
Parameter for Igb in accumulation.
|
|
nigbacc
|
1.0
|
Parameter for Igbacc slope.
|
|
aigbinv
|
1.11e-2 (F s2/g)^0.5/m
|
Parameter for Igb in inversion.
|
|
bigbinv
|
9.49e-4 (F s2/g)^0.5/m/V
|
Parameter for Igb in inversion.
|
|
cigbinv
|
0.006 1/V
|
Parameter for Igb in inversion.
|
|
eigbinv
|
1.1 V
|
Parameter for the Si bandgap for Igbinv.
|
|
nigbinv
|
3.0
|
Parameter for Igbinv slope.
|
|
aigc
|
1.36e-2 (F s2/g)^0.5/m
|
Parameter for Igc.
|
|
bigc
|
1.71e-3 (F s2/g)^0.5/m/V
|
Parameter for Igc.
|
|
cigc
|
0.075 1/V
|
Parameter for Igc.
|
|
aigs
|
1.36e-2 (F s2/g)^0.5/m
|
Parameter for Igs.
|
|
bigs
|
1.71e-3 (F s2/g)^0.5/m/V
|
Parameter for Igs.
|
|
cigs
|
0.075 1/V
|
Parameter for Igs.
|
|
aigd
|
1.36e-2 (F s2/g)^0.5/m
|
Parameter for Igd.
|
|
bigd
|
1.71e-3 (F s2/g)^0.5/m/V
|
Parameter for Igd.
|
|
cigd
|
0.075 1/V
|
Parameter for Igd.
|
|
dlcig
|
0.0 m
|
Delta L for Ig model.
|
|
dlcigd
|
0.0 m
|
Delta L for Ig model.
|
|
poxedge
|
1.0
|
Factor for the gate edge tox.
|
|
ntox
|
1.0
|
Exponent for tox ratio.
|
|
toxref
|
3.0e-9 m
|
Target tox value.
|
|
pigcd
|
1.0
|
Igc, S/D partition parameter.
|
|
aigcl
|
0.0 m
|
Length dependence coefficient of aigc.
|
|
aigcw
|
0.0 m
|
Width dependence coefficient of aigc.
|
|
aigsl
|
0.0 m
|
Length dependence coefficient of aigs.
|
|
aigsw
|
0.0 m
|
Width dependence coefficient of aigs.
|
|
aigdl
|
0.0 m
|
Length dependence coefficient of aigd.
|
|
aigdw
|
0.0 m
|
Width dependence coefficient of aigd.
|
|
pigcdl
|
0.0 m
|
Length dependence coefficient of pigcd.
|
|
laigbinv
|
0.0 (F s2/g)^0.5
|
Length dependence of AIGBINV.
|
|
waigbinv
|
0.0 (F s2/g)^0.5
|
Width dependence of AIGBINV.
|
|
paigbinv
|
0.0 m (F s2/g)^0.5
|
Area dependence of AIGBINV.
|
|
lbigbinv
|
0.0 (F s2/g)^0.5/V
|
Length dependence of BIGBINV.
|
|
wbigbinv
|
0.0 (F s2/g)^0.5/V
|
Width dependence of BIGBINV.
|
|
pbigbinv
|
0.0 m (F s2/g)^0.5/V
|
Area dependence of BIGBINV.
|
|
lcigbinv
|
0.0 m/V
|
Length dependence of CIGBINV.
|
|
wcigbinv
|
0.0 m/V
|
Width dependence of CIGBINV.
|
|
pcigbinv
|
0.0 m2/V
|
Area dependence of CIGBINV.
|
|
leigbinv
|
0.0 m V
|
Length dependence of EIGBINV.
|
|
weigbinv
|
0.0 m V
|
Width dependence of EIGBINV.
|
|
peigbinv
|
0.0 m2 V
|
Area dependence of EIGBINV.
|
|
lnigbinv
|
0.0 m
|
Length dependence of NIGBINV.
|
|
wnigbinv
|
0.0 m
|
Width dependence of NIGBINV.
|
|
pnigbinv
|
0.0 m2
|
Area dependence of NIGBINV.
|
|
laigbacc
|
0.0 (F s2/g)^0.5
|
Length dependence of AIGBACC.
|
|
waigbacc
|
0.0 (F s2/g)^0.5
|
Width dependence of AIGBACC.
|
|
paigbacc
|
0.0 m (F s2/g)^0.5
|
Area dependence of AIGBACC.
|
|
lbigbacc
|
0.0 (F s2/g)^0.5/V
|
Length dependence of BIGBACC.
|
|
wbigbacc
|
0.0 (F s2/g)^0.5/V
|
Width dependence of BIGBACC.
|
|
pbigbacc
|
0.0 m (F s2/g)^0.5/V
|
Area dependence of BIGBACC.
|
|
lcigbacc
|
0.0 m/V
|
Length dependence of CIGBACC.
|
|
wcigbacc
|
0.0 m/V
|
Width dependence of CIGBACC.
|
|
pcigbacc
|
0.0 m2/V
|
Area dependence of CIGBACC.
|
|
lnigbacc
|
0.0 m
|
Length dependence of NIGBACC.
|
|
wnigbacc
|
0.0 m
|
Width dependence of NIGBACC.
|
|
pnigbacc
|
0.0 m2
|
Area dependence of NIGBACC.
|
|
laigc
|
0.0 (F s2/g)^0.5
|
Length dependence of AIGC.
|
|
waigc
|
0.0 (F s2/g)^0.5
|
Width dependence of AIGC.
|
|
paigc
|
0.0 m (F s2/g)^0.5
|
Area dependence of AIGC.
|
|
lbigc
|
0.0 (F s2/g)^0.5/V
|
Length dependence of BIGC.
|
|
wbigc
|
0.0 (F s2/g)^0.5/V
|
Width dependence of BIGC.
|
|
pbigc
|
0.0 m (F s2/g)^0.5/V
|
Area dependence of BIGC.
|
|
lcigc
|
0.0 m/V
|
Length dependence of CIGC.
|
|
wcigc
|
0.0 m/V
|
Width dependence of CIGC.
|
|
pcigc
|
0.0 m2/V
|
Area dependence of CIGC.
|
|
laigs
|
0.0 (F s2/g)^0.5
|
Length dependence of AIGS.
|
|
waigs
|
0.0 (F s2/g)^0.5
|
Width dependence of AIGS.
|
|
paigs
|
0.0 m (F s2/g)^0.5
|
Area dependence of AIGS.
|
|
lbigs
|
0.0 (F s2/g)^0.5/V
|
Length dependence of BIGS.
|
|
wbigs
|
0.0 (F s2/g)^0.5/V
|
Width dependence of BIGS.
|
|
pbigs
|
0.0 m (F s2/g)^0.5/V
|
Area dependence of BIGS.
|
|
lcigs
|
0.0 m/V
|
Length dependence of CIGS.
|
|
wcigs
|
0.0 m/V
|
Width dependence of CIGS.
|
|
pcigs
|
0.0 m2/V
|
Area dependence of CIGS.
|
|
laigd
|
0.0 (F s2/g)^0.5
|
Length dependence of AIGD.
|
|
waigd
|
0.0 (F s2/g)^0.5
|
Width dependence of AIGD.
|
|
paigd
|
0.0 m (F s2/g)^0.5
|
Area dependence of AIGD.
|
|
lbigd
|
0.0 (F s2/g)^0.5/V
|
Length dependence of BIGD.
|
|
wbigd
|
0.0 (F s2/g)^0.5/V
|
Width dependence of BIGD.
|
|
pbigd
|
0.0 m (F s2/g)^0.5/V
|
Area dependence of BIGD.
|
|
lcigd
|
0.0 m/V
|
Length dependence of CIGD.
|
|
wcigd
|
0.0 m/V
|
Width dependence of CIGD.
|
|
pcigd
|
0.0 m2/V
|
Area dependence of CIGD.
|
|
lpoxedge
|
0.0 m
|
Length dependence of POXEDGE.
|
|
wpoxedge
|
0.0 m
|
Width dependence of POXEDGE.
|
|
ppoxedge
|
0.0 m2
|
Area dependence of POXEDGE.
|
|
ldlcig
|
0.0 m2
|
Length dependence of DLCIG.
|
|
wdlcig
|
0.0 m2
|
Width dependence of DLCIG.
|
|
pdlcig
|
0.0 m3
|
Area dependence of DLCIG.
|
|
ldlcigd
|
0.0 m2
|
Length dependence of DLCIGD.
|
|
wdlcigd
|
0.0 m2
|
Width dependence of DLCIGD.
|
|
pdlcigd
|
0.0 m3
|
Area dependence of DLCIGD.
|
|
lntox
|
0.0 m
|
Length dependence of NTOX.
|
|
wntox
|
0.0 m
|
Width dependence of NTOX.
|
|
pntox
|
0.0 m2
|
Area dependence of NTOX.
|
|
agidl
|
0.0 V/m
|
Pre-exponential coefficient for GIDL.
|
|
agidll
|
0.0 m
|
Length dependence coefficient of agidl.
|
|
agidlw
|
0.0 m
|
Width dependence coefficient of agidl.
|
|
lagidl
|
0.0 m2
|
Length dependence of AGIDL.
|
|
wagidl
|
0.0 m2
|
Width dependence of AGIDL.
|
|
pagidl
|
0.0 m3
|
Area dependence of AGIDL.
|
|
bgidl
|
2.3e9 V/m
|
Exponential coefficient for GIDL.
|
|
lbgidl
|
0.0 V
|
Length dependence of BGIDL.
|
|
wbgidl
|
0.0 V
|
Width dependence of BGIDL.
|
|
pbgidl
|
0.0 V m
|
Area dependence of BGIDL.
|
|
cgidl
|
0.5 V/m
|
Parameter for body-bias effect on GIDL.
|
|
lcgidl
|
0.0 V
|
Length dependence of CGIDL.
|
|
wcgidl
|
0.0 V
|
Width dependence of CGIDL.
|
|
pcgidl
|
0.0 V m
|
Area dependence of CGIDL.
|
|
egidl
|
0.8 V
|
Band bending parameter for GIDL.
|
|
legidl
|
0.0 V m
|
Length dependence of EGIDL.
|
|
wegidl
|
0.0 V m
|
Width dependence of EGIDL.
|
|
pegidl
|
0.0 V m2
|
Area dependence of EGIDL.
|
|
agisl
|
0.0 V/m
|
Pre-exponential coefficient for GISL.
|
|
agisll
|
0.0 m
|
Length dependence coefficient of agisl.
|
|
agislw
|
0.0 m
|
Width dependence coefficient of agisl.
|
|
lagisl
|
0.0 m2
|
Length dependence of AGISL.
|
|
wagisl
|
0.0 m2
|
Width dependence of AGISL.
|
|
pagisl
|
0.0 m3
|
Area dependence of AGISL.
|
|
bgisl
|
2.3e9 V/m
|
Exponential coefficient for GISL.
|
|
lbgisl
|
0.0 V
|
Length dependence of BGISL.
|
|
wbgisl
|
0.0 V
|
Width dependence of BGISL.
|
|
pbgisl
|
0.0 V m
|
Area dependence of BGISL.
|
|
cgisl
|
0.5 V3
|
Parameter for body-bias effect on GISL.
|
|
lcgisl
|
0.0 V
|
Length dependence of CGISL.
|
|
wcgisl
|
0.0 V
|
Width dependence of CGISL.
|
|
pcgisl
|
0.0 V m
|
Area dependence of CGISL.
|
|
egisl
|
0.8 V
|
Fitting parameter for band bending for GISL.
|
|
legisl
|
0.0 V m
|
Length dependence of EGISL.
|
|
wegisl
|
0.0 V m
|
Width dependence of EGISL.
|
|
pegisl
|
0.0 V m2
|
Area dependence of EGISL.
|
|
cf
|
0.0 F/m
|
Outer fringe capacitance.
|
|
lcf
|
0.0 F
|
Length dependence of CF.
|
|
wcf
|
0.0 F
|
Width dependence of CF.
|
|
pcf
|
0.0 F m
|
Area dependence of CF.
|
|
cfrcoeff
|
1.0 F/m
|
Coefficient for outer fringe capacitance.
|
|
cgso
|
0.0 F/m
|
Gate-to-source overlap capacitance.
|
|
cgdo
|
0.0 F/m
|
Gate-to-drain overlap capacitance.
|
|
cgbo
|
0.0 F/m
|
Gate-to-body overlap capacitance.
|
|
cgsl
|
0.0 F/m
|
Overlap capacitance between gate and lightly-doped source region.
|
|
lcgsl
|
0.0
|
Length dependence of CGSL.
|
|
wcgsl
|
0.0
|
Width dependence of CGSL.
|
|
pcgsl
|
0.0
|
Area dependence of CGSL.
|
|
cgdl
|
0.0 F/m
|
Overlap capacitance between gate and lightly-doped drain region.
|
|
lcgdl
|
0.0 F
|
Length dependence of CGDL.
|
|
wcgdl
|
0.0 F
|
Width dependence of CGDL.
|
|
pcgdl
|
0.0 F m
|
Area dependence of CGDL.
|
|
ckappas
|
0.6 V
|
Coefficient of bias-dependent overlap capacitance for the source side.
|
|
lckappas
|
0.0 m V
|
Length dependence of CKAPPAS.
|
|
wckappas
|
0.0 m V
|
Width dependence of CKAPPAS.
|
|
pckappas
|
0.0 m2 V
|
Area dependence of CKAPPAS.
|
|
ckappad
|
0.6 V
|
Coefficient of bias-dependent overlap capacitance for the source side.
|
|
lckappad
|
0.0 m V
|
Length dependence of CKAPPAD.
|
|
wckappad
|
0.0 m V
|
Width dependence of CKAPPAD.
|
|
pckappad
|
0.0 m2 V
|
Area dependence of CKAPPAD.
|
|
ckappad1
|
1.0e6
|
Parameter for tuning CGD.
|
|
ckappad2
|
1.0
|
Parameter for tuning CGD.
|
|
ckappas1
|
1.0e6
|
Parameter for tuning CGD.
|
|
ckappas2
|
1.0
|
Parameter for tuning CGD.
|
|
dmcg
|
0.0 m
|
Distance of mid-contact to gate edge.
|
|
dmci
|
0.0 m
|
Distance of mid-contact to isolation.
|
|
dmdg
|
0.0 m
|
Distance of mid-diffusion to gate edge.
|
|
dmcgt
|
0.0 m
|
Distance of mid-contact to gate edge in test.
|
|
xgl
|
0.0 m
|
Variation in Ldrawn.
|
|
rshg
|
0.1 Ω
|
Gate sheet resistance.
|
|
cjs
|
5.0e-4 F/m2
|
Unit area source-side junction capacitance at zero bias.
|
|
cjd
|
5.0e-4 F/m2
|
Unit area drain-side junction capacitance at zero bias.
|
|
cjsws
|
5.0e-10 F/m
|
Unit length source-side side-wall junction capacitance at zero bias.
|
|
cjswd
|
5.0e-10 F/m
|
Unit length drain-side side-wall junction capacitance at zero bias.
|
|
cjswgs
|
0.0 F/m
|
Unit length source-side gate side-wall junction capacitance at zero bias.
|
|
cjswgd
|
0.0 F/m
|
Unit length drain-side gate side-wall junction capacitance at zero bias.
|
|
pbs
|
1.0 V
|
Source-side bulk junction built-in potential.
|
|
pbd
|
1.0 V
|
Drain-side bulk junction built-in potential.
|
|
pbsws
|
1.0 V
|
Built-in potential for Source-side side-wall junction capacitance.
|
|
pbswd
|
1.0 V
|
Built-in potential for Drain-side side-wall junction capacitance.
|
|
pbswgs
|
1.0 V
|
Built-in potential for Source-side gate side-wall junction capacitance.
|
|
pbswgd
|
1.0 V
|
Built-in potential for Drain-side gate side-wall junction capacitance.
|
|
mjs
|
0.5
|
Source bottom junction capacitance grading coefficient.
|
|
mjd
|
0.5
|
Drain bottom junction capacitance grading coefficient.
|
|
mjsws
|
0.33
|
Source side-wall junction capacitance grading coefficient.
|
|
mjswd
|
0.33
|
Drain side-wall junction capacitance grading coefficient.
|
|
mjswgs
|
0.33
|
Source-side gate side-wall junction capacitance grading coefficient.
|
|
mjswgd
|
0.33
|
Drain-side gate side-wall junction capacitance grading coefficient.
|
|
jss
|
1.0e-4 A/m2
|
Bottom source junction reverse saturation current density.
|
|
jsd
|
1.0e-4 A/m2
|
Bottom drain junction reverse saturation current density.
|
|
jsws
|
0.0 A/m
|
Unit length reverse saturation current for side-wall source junction.
|
|
jswd
|
0.0 A/m
|
Unit length reverse saturation current for side-wall drain junction.
|
|
jswgs
|
0.0 A/m
|
Unit length reverse saturation current for gate-edge side-wall source junction.
|
|
jswgd
|
0.0 A/m
|
Unit length reverse saturation current for gate-edge side-wall drain junction.
|
|
njs
|
1.0
|
Source junction emission coefficient.
|
|
njd
|
1.0
|
Drain junction emission coefficient.
|
|
ijthsfwd
|
0.1 A
|
Forward source diode breakdown limiting current.
|
|
ijthdfwd
|
0.1 A
|
Forward drain diode breakdown limiting current.
|
|
ijthsrev
|
0.1 A
|
Reverse source diode breakdown limiting current.
|
|
ijthdrev
|
0.1 A
|
Reverse drain diode breakdown limiting current.
|
|
bvs
|
10.0 V
|
Source diode breakdown voltage.
|
|
bvd
|
10.0 V
|
Drain diode breakdown voltage.
|
|
xjbvs
|
1.0
|
Fitting parameter for source diode breakdown current.
|
|
xjbvd
|
1.0
|
Fitting parameter for drain diode breakdown current.
|
|
jtss
|
0.0 A/m
|
Bottom source junction trap-assisted saturation current density.
|
|
jtsd
|
0.0 A/m
|
Bottom drain junction trap-assisted saturation current density.
|
|
jtssws
|
0.0 A/m2
|
Unit length trap-assisted saturation current for side-wall source junction.
|
|
jtsswd
|
0.0 A/m2
|
Unit length trap-assisted saturation current for side-wall drain junction.
|
|
jtsswgs
|
0.0 A/m
|
Unit length trap-assisted saturation current for gate-edge side-wall source junction.
|
|
jtsswgd
|
0.0 A/m
|
Unit length trap-assisted saturation current for gate-edge side-wall drain junction.
|
|
jtweff
|
0.0 m
|
Trap assisted tunneling current width dependence.
|
|
njts
|
20.0
|
Non-ideality factor for jtss.
|
|
njtsd
|
20.0
|
Non-ideality factor for jtsd.
|
|
njtssw
|
20.0
|
Non-ideality factor for jtssws.
|
|
njtsswd
|
20.0
|
Non-ideality factor for jtsswd.
|
|
njtsswg
|
20.0
|
Non-ideality factor for jtsswgs.
|
|
njtsswgd
|
20.0
|
Non-ideality factor for jtsswgd.
|
|
vtss
|
10.0 V
|
Bottom source junction trap-assisted current voltage dependent parameter.
|
|
vtsd
|
10.0 V
|
Bottom drain junction trap-assisted current voltage dependent parameter.
|
|
vtssws
|
10.0 V
|
Unit length trap-assisted current voltage dependent parameter for side-wall source junction.
|
|
vtsswd
|
10.0 V
|
Unit length trap-assisted current voltage dependent parameter for side-wall drain junction.
|
|
vtsswgs
|
10.0 V
|
Unit length trap-assisted current voltage dependent parameter for gate-edge side-wall source junction.
|
|
vtsswgd
|
10.0 V
|
Unit length trap-assisted current voltage dependent parameter for gate-edge side-wall drain junction.
|
|
xrcrg1
|
12.0
|
1st fitting parameter for the bias-dependent Rg.
|
|
xrcrg2
|
1.0
|
2nd fitting parameter for the bias-dependent Rg.
|
|
gbmin
|
1.0e-12 1/Ω
|
Minimum body conductance.
|
|
rbps0
|
50.0 Ω
|
Scaling pre-factor for RBPS.
|
|
rbpsl
|
0.0
|
Length scaling parameter for RBPS.
|
|
rbpsw
|
0.0
|
Width scaling parameter for RBPS.
|
|
rbpsnf
|
0.0
|
Number of fingers scaling parameter for RBPS.
|
|
rbpd0
|
50.0 Ω
|
Scaling pre-factor for RBPD.
|
|
rbpdl
|
0.0
|
Length scaling parameter for rbpd.
|
|
rbpdw
|
0.0
|
Width scaling parameter for RBPD.
|
|
rbpdnf
|
0.0
|
Number of fingers scaling parameter for RBPD.
|
|
rbpbx0
|
100.0 Ω
|
Scaling pre-factor for RBPBX.
|
|
rbpbxl
|
0.0
|
Length scaling parameter for RBPBX.
|
|
rbpbxw
|
0.0
|
Width scaling parameter for RBPBX.
|
|
rbpbxnf
|
0.0
|
Number of fingers scaling parameter for RBPBX.
|
|
rbpby0
|
100.0 Ω
|
Scaling pre-factor for RBPBY.
|
|
rbpbyl
|
0.0
|
Length scaling parameter for RBPBY.
|
|
rbpbyw
|
0.0
|
Width scaling parameter for RBPBY.
|
|
rbpbynf
|
0.0
|
Number of fingers scaling parameter for RBPBY.
|
|
rbsbx0
|
100.0 Ω
|
Scaling pre-factor for RBSBX.
|
|
rbsby0
|
100.0 Ω
|
Scaling pre-factor for RBSBY.
|
|
rbdbx0
|
100.0 Ω
|
Scaling pre-factor for RBDBX.
|
|
rbdby0
|
100.0 Ω
|
Scaling pre-factor for RBDBY.
|
|
rbsdbxl
|
0.0
|
Length scaling parameter for RBSBX and RBDBX.
|
|
rbsdbxw
|
0.0
|
Width scaling parameter for RBSBX and RBDBX.
|
|
rbsdbxnf
|
0.0
|
Number of fingers scaling parameter for RBSBX and RBDBX.
|
|
rbsdbyl
|
0.0
|
Length scaling parameter for RBSBY and RBDBY.
|
|
rbsdbyw
|
0.0
|
Width scaling parameter for RBSBY and RBDBY.
|
|
rbsdbynf
|
0.0
|
Number of fingers scaling parameter for RBSBY and RBDBY.
|
|
ef
|
1.0
|
Flicker noise frequency exponent.
|
|
em
|
4.1e7 V/m
|
Saturation field.
|
|
noia
|
6.250e40 s^(1-EF)/(eV)^1/m3
|
Flicker noise parameter A.
|
|
noib
|
3.125e25 s^(1-EF)/(eV)^1/m
|
Flicker noise parameter B.
|
|
noic
|
8.750e8 s^(1-EF) m/(eV)^1
|
Flicker noise parameter C.
|
|
lintnoi
|
0.0 m
|
Length reduction parameter offset.
|
|
ntnoi
|
1.0
|
Noise factor for short-channel devices for TNOIMOD=0 only.
|
|
rnoia
|
0.577
|
Noise parameter for TNOIMOD = 1.
|
|
rnoib
|
0.5164
|
Noise parameter for TNOIMOD = 1.
|
|
rnoic
|
0.395
|
Noise parameter for TNOIMOD = 1.
|
|
tnoia
|
0.0
|
Noise parameter for TNOIMOD = 1. the default value has been changed to 1.5 since v107.0..
|
|
tnoib
|
0.0
|
Noise parameter for TNOIMOD = 1. the default value has been changed to 3.5 since v107.0..
|
|
tnoic
|
0.0
|
Noise correlation coefficient for TNOIMOD = 1.
|
|
binunit
|
1
|
Unit of L and W for Binning. 1: micro-meter, 0: default.
|
|
dlbin
|
0.0
|
Length reduction parameter for binning.
|
|
dwbin
|
0.0
|
Width reduction parameter for binning.
|
|
tnom
|
27.0 C
|
Temperature at which the model was extracted.
|
|
tbgasub
|
4.73e-4 eV/K
|
Bandgap temperature coefficient.
|
|
tbgbsub
|
636.0 K
|
Bandgap temperature coefficient.
|
|
tnfactor
|
0.0
|
Temperature exponent for nfactor.
|
|
ute
|
(-1.5)
|
Mobility temperature exponent.
|
|
lute
|
0.0 m
|
Length dependence of UTE.
|
|
wute
|
0.0 m
|
Width dependence of UTE.
|
|
pute
|
0.0 m2
|
Area dependence of UTE.
|
|
utel
|
0.0 m
|
Length scaling parameter for UTE.
|
|
ua1
|
1.0e-3 m/V
|
Temperature coefficient for UA.
|
|
lua1
|
0.0 m2/V
|
Length dependence of UA1.
|
|
wua1
|
0.0 m2/V
|
Width dependence of UA1.
|
|
pua1
|
0.0 m3/V
|
Area dependence of UA1.
|
|
ua1l
|
0.0 m
|
Length scaling parameter for UA1.
|
|
uc1
|
0.056e-9 1/K
|
Temperature coefficient for UC.
|
|
luc1
|
0.0 m/K
|
Length dependence of UC1.
|
|
wuc1
|
0.0 m/K
|
Width dependence of UC1.
|
|
puc1
|
0.0 m2/K
|
Area dependence of UC1.
|
|
ud1
|
0.0 1/m2
|
Temperature coefficient for ud.
|
|
lud1
|
0.0 1/m
|
Length dependence of UD1.
|
|
wud1
|
0.0 1/m
|
Width dependence of UD1.
|
|
pud1
|
0.0
|
Area dependence of UD1.
|
|
ud1l
|
0.0 m
|
Length scaling parameter for UD1.
|
|
ucste
|
(-4.775e-3)
|
Temperature coefficient for UCS.
|
|
lucste
|
0.0 m
|
Length dependence of UCSTE.
|
|
wucste
|
0.0 m
|
Width dependence of UCSTE.
|
|
pucste
|
0.0 m2
|
Area dependence of UCSTE.
|
|
teta0
|
0.0
|
Temperature coefficient for eta0.
|
|
prt
|
0.0 Ω m
|
Temperature coefficient for resistance.
|
|
lprt
|
0.0 m
|
Length dependence of PRT.
|
|
wprt
|
0.0 m
|
Width dependence of PRT.
|
|
pprt
|
0.0 m2
|
Area dependence of PRT.
|
|
at
|
(-1.56e-3) m/s
|
Temperature coefficient for saturation velocity.
|
|
lat
|
0.0 m2/s
|
Length dependence of AT.
|
|
wat
|
0.0 m2/s
|
Width dependence of AT.
|
|
pat
|
0.0 m3/s
|
Area dependence of AT.
|
|
atl
|
0.0 m
|
Length Scaling parameter for AT.
|
|
tdelta
|
0.0 1/K
|
Temperature coefficient for DELTA.
|
|
ptwgt
|
0.0 1/K
|
Temperature coefficient for PTWG.
|
|
lptwgt
|
0.0 m/K
|
Length dependence of PTWGT.
|
|
wptwgt
|
0.0 m/K
|
Width dependence of PTWGT.
|
|
pptwgt
|
0.0 m2/K
|
Area dependence of PTWGT.
|
|
ptwgtl
|
0.0 m
|
Length scaling parameter for ptwgt.
|
|
kt1
|
(-0.11) V
|
Temperature coefficient for vth.
|
|
kt1exp
|
1.0
|
Temperature coefficient for Vth.
|
|
kt1l
|
0.0 V m
|
Temperature coefficient for vth.
|
|
lkt1
|
0.0 V m
|
Length dependence of KT1.
|
|
wkt1
|
0.0 V m
|
Width dependence of KT1.
|
|
pkt1
|
0.0 V m2
|
Area dependence of KT1.
|
|
kt2
|
0.022
|
Temperature coefficient for Vth.
|
|
lkt2
|
0.0 m
|
Length dependence of KT2.
|
|
wkt2
|
0.0 m
|
Width dependence of KT2.
|
|
pkt2
|
0.0 m2
|
Area dependence of KT2.
|
|
iit
|
0.0
|
Temperature coefficient for BETA0.
|
|
liit
|
0.0 m
|
Length dependence of IIT.
|
|
wiit
|
0.0 m
|
Width dependence of IIT.
|
|
piit
|
0.0 m2
|
Area dependence of IIT.
|
|
igt
|
2.5
|
Gate current temperature dependence.
|
|
ligt
|
0.0 m
|
Length dependence of IGT.
|
|
wigt
|
0.0 m
|
Width dependence of IGT.
|
|
pigt
|
0.0 m2
|
Area dependence of IGT.
|
|
tgidl
|
0.0 1/K
|
Temperature coefficient for GIDL/GISL.
|
|
ltgidl
|
0.0 m/K
|
Length dependence of TGIDL.
|
|
wtgidl
|
0.0 m/K
|
Width dependence of TGIDL.
|
|
ptgidl
|
0.0 m2/K
|
Area dependence of TGIDL.
|
|
tcj
|
0.0 1/K
|
Temperature coefficient for cjs/cjd.
|
|
tcjsw
|
0.0 1/K
|
Temperature coefficient for cjsws/cjswd.
|
|
tcjswg
|
0.0 1/K
|
Temperature coefficient for cjswgs/cjswgd.
|
|
tpb
|
0.0 V/K
|
Temperature coefficient for pbs/pbd.
|
|
tpbsw
|
0.0 V/K
|
Temperature coefficient for pbsws/pbswd.
|
|
tpbswg
|
0.0 V/K
|
Temperature coefficient for pbswgs/pbswgd.
|
|
xtis
|
3.0
|
Source junction current temperature exponent.
|
|
xtid
|
3.0
|
Drain junction current temperature exponent.
|
|
xtss
|
0.02
|
Power dependence of JTSS on temperature.
|
|
xtsd
|
0.02
|
Power dependence of JTSD on temperature.
|
|
xtssws
|
0.02
|
Power dependence of JTSSWS on temperature.
|
|
xtsswd
|
0.02
|
Power dependence of JTSSWD on temperature.
|
|
xtsswgs
|
0.02
|
Power dependence of JTSSWGS on temperature.
|
|
xtsswgd
|
0.02
|
Power dependence of JTSSWGD on temperature.
|
|
tnjts
|
0.0
|
Temperature coefficient for njts.
|
|
tnjtsd
|
0.0
|
Temperature coefficient for njtsd.
|
|
tnjtssw
|
0.0
|
Temperature coefficient for njtssw.
|
|
tnjtsswd
|
0.0
|
Temperature coefficient for njtsswd.
|
|
tnjtsswg
|
0.0
|
Temperature coefficient for njtsswg.
|
|
tnjtsswgd
|
0.0
|
Temperature coefficient for njtsswgd.
|
|
rth0
|
0.0 m K/W
|
Thermal resistance.
|
|
cth0
|
1.0e-5 s W/(m K)
|
Thermal capacitance.
|
|
wth0
|
0.0 m
|
Width dependence coefficient for Rth and Cth.
|
|
saref
|
1.0e-6 m
|
Reference distance between OD edge from Poly from one side.
|
|
sbref
|
1.0e-6 m
|
Reference distance between OD edge from Poly from other side.
|
|
wlod
|
0.0 m
|
Width parameter for stress effect.
|
|
ku0
|
0.0 m
|
Mobility degradation/enhancement parameter for stress effect.
|
|
kvsat
|
0.0 m
|
Saturation velocity degradation/enhancement parameter for stress effect.
|
|
tku0
|
0.0
|
Temperature coefficient for ku0.
|
|
lku0
|
0.0 m^LLODKU0
|
Length dependence of KU0.
|
|
wku0
|
0.0 m^WLODKU0
|
Width dependence of KU0.
|
|
pku0
|
0.0 m^(LLODKU0+WLODKU0)
|
Cross-term dependence of KU0.
|
|
llodku0
|
0.0
|
Length parameter for U0 stress effect.
|
|
wlodku0
|
0.0
|
Width parameter for U0 stress effect.
|
|
kvth0
|
0.0 V m
|
Threshold shift parameter for stress effect.
|
|
lkvth0
|
0.0 m^LLODKU0
|
Length dependence of KVTH0.
|
|
wkvth0
|
0.0 m^WLODKU0
|
Width dependence of KVTH0.
|
|
pkvth0
|
0.0 m^(LLODKU0+WLODKU0)
|
Cross-term dependence of KVTH0.
|
|
llodvth
|
0.0
|
Length parameter for vth stress effect.
|
|
wlodvth
|
0.0
|
Width parameter for vth stress effect.
|
|
stk2
|
0.0 m
|
K2 shift factor related to vth change.
|
|
lodk2
|
0.0
|
K2 shift modification factor for stress effect.
|
|
steta0
|
0.0 m
|
ETA0 shift related to vth0 change.
|
|
lodeta0
|
0.0
|
ETA0 modification foator for stress effect.
|
|
web
|
0.0
|
Coefficient for SCB (> 0).
|
|
wec
|
0.0
|
Coefficient for SCC (> 0).
|
|
kvth0we
|
0.0 V
|
Threshold shift factor for well proximity effect.
|
|
lkvth0we
|
0.0 m
|
Length dependence of KVTH0WE.
|
|
wkvth0we
|
0.0 m
|
Width dependence of KVTH0WE.
|
|
pkvth0we
|
0.0 m2
|
Area dependence of KVTH0WE.
|
|
k2we
|
0.0
|
K2 shift factor for well proximity effect.
|
|
lk2we
|
0.0 m
|
Length dependence of K2WE.
|
|
wk2we
|
0.0 m
|
Width dependence of K2WE.
|
|
pk2we
|
0.0 m2
|
Area dependence of K2WE.
|
|
ku0we
|
0.0
|
Mobility degradation factor for well proximity effect.
|
|
lku0we
|
0.0 m
|
Length dependence of KU0WE.
|
|
wku0we
|
0.0 m
|
Width dependence of KU0WE.
|
|
pku0we
|
0.0 m2
|
Area dependence of KU0WE.
|
|
scref
|
1.0e-6 m
|
Reference distance to calculate SCA,SCB and SCC (< 0).
|
|
edgefet
|
1
|
0: Edge FET Model OFF, 1: Edge FET Model ON.
|
|
wedge
|
10.0e-9 m
|
Edge FET width.
|
|
lwedge
|
0.0 m2
|
Length dependence of WEDGE.
|
|
wwedge
|
0.0 m2
|
Width dependence of WEDGE.
|
|
pwedge
|
0.0 m3
|
Area dependence dependence of WEDGE.
|
|
dgammaedge
|
0.0
|
Different in body-bias coefficient between Edge-FET and Main-FET.
|
|
ldgammaedge
|
0.0 m
|
Length dependence of DGAMMAEDGE.
|
|
wdgammaedge
|
0.0 m
|
Width dependence of DGAMMAEDGE.
|
|
pdgammaedge
|
0.0 m2
|
Area dependence dependence of DGAMMAEDGE.
|
|
dgammaedgel
|
0.0
|
L dependence parameter for DGAMMA.
|
|
dgammaedgelexp
|
1.0
|
Exponent of L dependence parameter for DGAMMA.
|
|
dvtedge
|
0.0
|
Vth shift for Edge FET.
|
|
ldvtedge
|
0.0 m
|
Length dependence of DVTEDGE.
|
|
wdvtedge
|
0.0 m
|
Width dependence of DVTEDGE.
|
|
pdvtedge
|
0.0 m2
|
Area dependence dependence of DVTEDGE.
|
|
nfactoredge
|
0.0
|
NFACTOR for Edge FET.
|
|
citedge
|
0.0 F/m2
|
CIT for Edge FET.
|
|
cdscdedge
|
1e-9 F/m2/V
|
CDSCD for Edge FET.
|
|
cdscbedge
|
0.0 F/m2/V
|
CDSCB for Edge FET.
|
|
eta0edge
|
0.08
|
DIBL parameter for edge FET.
|
|
etabedge
|
(-0.07) 1/V
|
ETAB for edge FET.
|
|
kt1edge
|
(-0.11) V
|
Temperature dependence parameter of threshold voltage for edge FET.
|
|
kt1ledge
|
0.0 V m
|
Temperature dependence parameter of threshold voltage for edge FET.
|
|
kt2edge
|
0.022
|
Temperature dependence parameter of threshold voltage for edge FET.
|
|
kt1expedge
|
1.0
|
Temperature dependence parameter of threshold voltage for edge device.
|
|
tnfactoredge
|
0.0
|
Temperature dependence parameter of subthreshold slope factor for edge.
|
|
teta0edge
|
0.0
|
Temperature dependence parameter of DIBL parameter for edge FET.
|
|
dvt0edge
|
2.2
|
First coefficient of SCE effect on Vth for Edge FET.
|
|
dvt1edge
|
0.53
|
Second coefficient of SCE effect on Vth for Edge FET.
|
|
dvt2edge
|
0.0 1/V
|
Body-bias coefficient for SCE effect for Edge FET.
|
|
noisemethod
|
option noisemethod
|
1:subckt; 0:noign.
|
|
geomod
|
0
|
Geometry-dependent parasitics model.
|
|
rgeomod
|
0
|
Geometry-dependent source/drain resistance. 0: RSH-based, 1: Holistic.
|
|
rgatemod
|
0
|
Gate resistance model selector.
|
|
rbodymod
|
0
|
Distributed body R model.
|
|
l
|
1.0e-5 m
|
Default channel length.
|
|
w
|
1.0e-5 m
|
Default total width including fingers.
|
|
nf
|
1
|
Number of fingers. It serves as the default value of instance nf.
|
|
dtemp
|
0.0 C
|
Offset of device temperature.
|
|
delvto
|
0.0
|
Zero bias threshold voltage variation.
|
|
ids0mult
|
1.0
|
Variability in drain current for miscellaneous reasons.
|
|
lmin
|
0.0 m
|
Minimum channel length for which the model is valid.
|
|
lmax
|
1.0 m
|
Maximum channel length for which the model is valid.
|
|
wmin
|
0.0 m
|
Minimum channel width for which the model is valid.
|
|
wmax
|
1.0 m
|
Maximum channel width for which the model is valid.
|
|
vds_max
|
infinity V
|
Maximum allowed voltage across source and drain.
|
|
vgd_max
|
infinity V
|
Maximum allowed voltage across drain and gate.
|
|
vgs_max
|
infinity V
|
Maximum allowed voltage across source/bulk and gate.
|
|
vbd_max
|
infinity V
|
Maximum allowed voltage across drain/source and bulk.
|
|
vbs_max
|
infinity V
|
Maximum allowed voltage across source and bulk.
|
|
vgb_max
|
infinity V
|
Maximum allowed voltage across gate and bulk.
|
|
vgdr_max
|
infinity V
|
Maximum allowed reverse voltage across gate and drain.
|
|
vgsr_max
|
infinity V
|
Maximum allowed reverse voltage across gate and source.
|
|
vgbr_max
|
infinity V
|
Maximum allowed reverse voltage across gate and bulk.
|
|
vbsr_max
|
infinity V
|
Maximum allowed reverse voltage across bulk and source.
|
|
vbdr_max
|
infinity V
|
Maximum allowed reverse voltage across bulk and drain.
|
|
vfbsdoff
|
0.0
|
S/D flatband voltage offset.
|
|
rbpb
|
50.0 Ω
|
Resistance between bNodePrime and bNode.
|
|
rbdb
|
50.0 Ω
|
Resistance between bNode and dbNode.
|
|
rbsb
|
50.0 Ω
|
Resistance between bNode and sbNode.
|
|
rbps
|
50.0 Ω
|
Resistance between bNodePrime and sbNode.
|
|
rbpd
|
50.0 Ω
|
Resistance between bNodePrime and bNode.
|
|
ngcon
|
1
|
Number of gate contacts.
|
|
mvtwl
|
0.0 V m
|
Threshold mismatch area dependence.
|
|
mvtwl2
|
0.0 V m^1.5
|
Threshold mismatch area square dependence.
|
|
mvt0
|
0.0 V
|
Threshold mismatch intercept.
|
|
mbewl
|
0.0 m
|
Beta mismatch area dependence.
|
|
mbe0
|
0.0
|
Beta mismatch intercept.
|
|
mismatchmod
|
0
|
Select mismatch mode. The available modes are 0, 1, 2 and 3.
|
|
mismatchdist
|
0.0
|
Mismatch Distance.
|
|
igclamp
|
1
|
Model flag for Ig clamping.
|
|
gkinkmod
|
1
|
Model flag.
|
|
vdsxmod
|
1
|
Model flag.
|
|
avdsx
|
20
|
Smoothing parameter in Vdsx in Vbsx.
|
|
rnoik
|
0.0
|
Exponential coeff. for enhanced correlated thermal noise.
|
|
tnoik
|
1.0
|
Exponential coeff. for enhanced correlated thermal noise.
|
|
retacvd
|
0.0
|
The impact of Vds on vgfbCV.
|
|
lretacvd
|
0.0
|
Length dependence of RETACVD.
|
|
wretacvd
|
0.0
|
Width dependence of RETACVD.
|
|
pretacvd
|
0.0
|
Area dependence of RETACVD.
|
|
retacvd1
|
0.0
|
Temperature coefficient for RETACVD.
|
|
lretacvd1
|
0.0
|
Length dependence of RETACVD1.
|
|
wretacvd1
|
0.0
|
Width dependence of RETACVD1.
|
|
pretacvd1
|
0.0
|
Area dependence of RETACVD1.
|
|
k0
|
0.0
|
Non-saturation effect parameter for strong inversion region.
|
|
lk0
|
0.0 m
|
Length dependence of K0.
|
|
wk0
|
0.0 m
|
Width dependence of K0.
|
|
pk0
|
0.0 m2
|
Area dependence of K0.
|
|
k01
|
0.0 1/K
|
Temperature coefficient for K0.
|
|
lk01
|
0.0 m/K
|
Length dependence of K01.
|
|
wk01
|
0.0 m/K
|
Width dependence of K01.
|
|
pk01
|
0.0 m2/K
|
Area dependence of K01.
|
|
m0
|
1.0
|
offset of non-saturation effect parameter for strong inversion region.
|
|
lm0
|
0.0 m
|
Length dependence of M0.
|
|
wm0
|
0.0 m
|
Width dependence of M0.
|
|
pm0
|
0.0 m2
|
Area dependence of M0.
|
|
m01
|
0.0 1/K
|
Temperature coefficient for M0.
|
|
lm01
|
0.0 m/K
|
Length dependence of M01.
|
|
wm01
|
0.0 m/K
|
Width dependence of M01.
|
|
pm01
|
0.0 m2/K
|
Area dependence of M01.
|
|
b0
|
0.0
|
Non-saturation effect parameter for strong inversion region.
|
|
lb0
|
0.0
|
Length dependence of B0.
|
|
wb0
|
0.0
|
Width dependence of B0.
|
|
pb0
|
0.0
|
Area dependence of B0.
|
|
b01
|
0.0
|
Temperature coefficient for B0.
|
|
lb01
|
0.0
|
Length dependence of B01.
|
|
wb01
|
0.0
|
Width dependence of B01.
|
|
pb01
|
0.0
|
Area dependence of B01.
|
|
b1
|
0.0
|
Non-saturation effect parameter for strong inversion region.
|
|
lb1
|
0.0
|
Length dependence of B1.
|
|
wb1
|
0.0
|
Width dependence of B1.
|
|
pb1
|
0.0
|
Area dependence of B1.
|
|
b11
|
0.0
|
Temperature coefficient for B1.
|
|
lb11
|
0.0
|
Length dependence of B11.
|
|
wb11
|
0.0
|
Width dependence of B11.
|
|
pb11
|
0.0
|
Area dependence of B11.
|
|
b2
|
1.0
|
Non-saturation effect parameter for strong inversion region.
|
|
lb2
|
0.0
|
Length dependence of B2.
|
|
wb2
|
0.0
|
Width dependence of B2.
|
|
pb2
|
0.0
|
Area dependence of B2.
|
|
b21
|
0.0
|
Temperature coefficient for B2.
|
|
lb21
|
0.0
|
Length dependence of B21.
|
|
wb21
|
0.0
|
Width dependence of B21.
|
|
pb21
|
0.0
|
Area dependence of B21.
|
|
ssl0
|
4.0e2 A/m
|
Temperature-and doping-independent parameter for sub-surface leakage drain current.
|
|
ssl1
|
3.36e8 1/m
|
Temperature-and doping-independent parameter for gate length for sub-surface leakage drain current.
|
|
ssl2
|
0.185
|
Fitting parameter for sub-surface leakage drain current: barrier height.
|
|
ssl3
|
0.3 V
|
Fitting parameter for sub-surface leakage drain current: gate voltage effect.
|
|
ssl4
|
1.4 1/V
|
Fitting parameter for sub-surface leakage drain current: gate voltage effect.
|
|
ssl5
|
0 1/V
|
Fitting parameter for sub-surface leakage drain current: gate voltage effect.
|
|
sslexp1
|
0.490
|
Fitting exponent for SSL doping effect.
|
|
sslexp2
|
1.42
|
Fitting exponent for SSL temperature.
|
|
lnfactoredge
|
0.0 m
|
Length dependence of NFACTOREDGE.
|
|
wnfactoredge
|
0.0 m
|
Width dependence of NFACTOREDGE.
|
|
pnfactoredge
|
0.0 m2
|
Area dependence of NFACTOREDGE.
|
|
lcitedge
|
0.0 F/m
|
Length dependence of CITEDGE.
|
|
wcitedge
|
0.0 F/m
|
Width dependence of CITEDGE.
|
|
pcitedge
|
0.0 F
|
Area dependence of CITEDGE.
|
|
lcdscdedge
|
0.0 F/m/V
|
Length dependence of CDSCDEDGE.
|
|
wcdscdedge
|
0.0 F/m/V
|
Width dependence of CDSCDEDGE.
|
|
pcdscdedge
|
0.0 F/V
|
Area dependence of CDSCDEDGE.
|
|
lcdscbedge
|
0.0 F/m/V
|
Length dependence of CDSCBEDGE.
|
|
wcdscbedge
|
0.0 F/m/V
|
Width dependence of CDSCBEDGE.
|
|
pcdscbedge
|
0.0 F/V
|
Area dependence of CDSCBEDGE.
|
|
leta0edge
|
0.0 m
|
Length dependence of ETA0EDGE.
|
|
weta0edge
|
0.0 m
|
Width dependence of ETA0EDGE.
|
|
peta0edge
|
0.0 m2
|
Area dependence of ETA0EDGE.
|
|
letabedge
|
0.0 m/V
|
Length dependence of ETABEDGE.
|
|
wetabedge
|
0.0 m/V
|
Width dependence of ETABEDGE.
|
|
petabedge
|
0.0 m2/V
|
Area dependence of ETABEDGE.
|
|
lkt1edge
|
0.0 V m
|
Length dependence of KT1EDGE.
|
|
wkt1edge
|
0.0 V m
|
Width dependence of KT1EDGE.
|
|
pkt1edge
|
0.0 V m2
|
Area dependence of KT1EDGE.
|
|
lkt1ledge
|
0.0 V m2
|
Length dependence of KT1LEDGE.
|
|
wkt1ledge
|
0.0 V m2
|
Width dependence of KT1LEDGE.
|
|
pkt1ledge
|
0.0 V m3
|
Area dependence of KT1LEDGE.
|
|
lkt2edge
|
0.0 m
|
Length dependence of KT2EDGE.
|
|
wkt2edge
|
0.0 m
|
Width dependence of KT2EDGE.
|
|
pkt2edge
|
0.0 m2
|
Area dependence of KT2EDGE.
|
|
lkt1expedge
|
0.0 m
|
Length dependence of KT1EXPEDGE.
|
|
wkt1expedge
|
0.0 m
|
Width dependence of KT1EXPEDGE.
|
|
pkt1expedge
|
0.0 m2
|
Area dependence of KT1EXPEDGE.
|
|
ltnfactoredge
|
0.0 m
|
Length dependence of TNFACTOREDGE.
|
|
wtnfactoredge
|
0.0 m
|
Width dependence of TNFACTOREDGE.
|
|
ptnfactoredge
|
0.0 m2
|
Area dependence of TNFACTOREDGE.
|
|
lteta0edge
|
0.0 m
|
Length dependence of TETA0EDGE.
|
|
wteta0edge
|
0.0 m
|
Width dependence of TETA0EDGE.
|
|
pteta0edge
|
0.0 m2
|
Area dependence of TETA0EDGE.
|
|
k2edge
|
0.0 V
|
Vth shift due to Vertical Non-uniform doping.
|
|
lk2edge
|
0.0 m
|
Length dependence of K2EDGE.
|
|
wk2edge
|
0.0 m
|
Width dependence of K2EDGE.
|
|
pk2edge
|
0.0 m2
|
Area dependence of K2EDGE.
|
|
kvth0edge
|
0.0 V m
|
Threshold Shift parameter for stress effect.
|
|
lkvth0edge
|
0.0 m^LLODKU0
|
Length dependence of KVTH0EDGE.
|
|
wkvth0edge
|
0.0 m^WLODKU0
|
Width dependence of KVTH0EDGE.
|
|
pkvth0edge
|
0.0 m^(LLODKU0+WLODKU0)
|
Area dependence of KVTH0EDGE.
|
|
stk2edge
|
0.0 m
|
K2 shift factor related to Vth change.
|
|
lstk2edge
|
0.0 m2
|
Length dependence of STK2EDGE.
|
|
wstk2edge
|
0.0 m2
|
Width dependence of STK2EDGE.
|
|
pstk2edge
|
0.0 m3
|
Area dependence of STK2EDGE.
|
|
steta0edge
|
0.0 m
|
ETA0 shift related to Vth0 change.
|
|
lsteta0edge
|
0.0 m2
|
Length dependence of STETA0EDGE.
|
|
wsteta0edge
|
0.0 m2
|
Width dependence of STETA0EDGE.
|
|
psteta0edge
|
0.0 m3
|
Area dependence of STETA0EDGE.
|
|
nedge
|
1
|
Flicker noise parameter for edge fet transistor.
|
|
noia1_edge
|
0.0
|
Flicker noise fitting parameter in strong inversionfor edge fet transistor.
|
|
noiax_edge
|
1.0
|
Flicker noise fitting parameter in strong inversionfor edge fet transistor.
|
|
lp
|
1.0e-5 m
|
Length scaling parameter for thermal noise.
|
|
lh
|
(30*1.0e-9) m
|
Length of Halo transistor.
|
|
noia2
|
noia s^(1-EF)/(eV)^1/m3
|
Flicker noise parameter A for Halo.
|
|
hndep
|
ndep 1/m3
|
Halo doping concentration for I-V.
|
|
fnoimod
|
0
|
Flicker noise model selector.
|
|
tnoik2
|
0.1 1/m
|
Empirical parameter for sensitivity of RNOIK.
|
|
ags
|
0.00
|
Coefficient of Source Charge dependence in AbulkIV for Id-Vd flexibility.
|
|
lags
|
0.00
|
Length dependence of AGS.
|
|
wags
|
0.00
|
Width dependence of AGS.
|
|
pags
|
0.00
|
Area dependence of AGS.
|
|
lags1
|
0.00
|
Length dependence of AGS1.
|
|
wags1
|
0.00
|
Width dependence of AGS1.
|
|
pags1
|
0.00
|
Area dependence of AGS1.
|
|
a0
|
0.00
|
Coefficient of depletion width dependence in AbulkIV for Id-Vd flexibility.
|
|
la0
|
0.00
|
Length dependence of A0.
|
|
wa0
|
0.00
|
Width dependence of A0.
|
|
pa0
|
0.00
|
Area dependence of A0.
|
|
keta
|
0.00
|
Coefficient of back-bias dependence in AbulkIV for Id-Vd flexibility.
|
|
lketa
|
0.00
|
Length dependence of KETA.
|
|
wketa
|
0.00
|
Width dependence of KETA.
|
|
pketa
|
0.00
|
Area dependence of KETA.
|
|
agscv
|
0.00
|
Coefficient of Source Charge dependence in AbulkCV for Capacitance flexibility.
|
|
lagscv
|
0.00
|
Length dependence of AGSCV.
|
|
wagscv
|
0.00
|
Width dependence of AGSCV.
|
|
pagscv
|
0.00
|
Area dependence of AGSCV.
|
|
a0cv
|
0.00
|
Coefficient of depletion width dependence in AbulkCV for Capacitance flexibility.
|
|
la0cv
|
0.00
|
Length dependence of A0CV.
|
|
wa0cv
|
0.00
|
Width dependence of A0V.
|
|
pa0cv
|
0.00
|
Area dependence of A0CV.
|
|
ketacv
|
0.00
|
Coefficient of back-bias dependence in AbulkCV for Capacitance flexibility.
|
|
lketacv
|
0.00
|
Length dependence of KETACV.
|
|
wketacv
|
0.00
|
Width dependence of KETACV.
|
|
pketacv
|
0.00
|
Area dependence of KETACV.
|
|
deltacv
|
0.125
|
Smoothing function factor for VdsatCV.
|
|
ldeltacv
|
0.0 m
|
Length dependence of DELTACV.
|
|
wdeltacv
|
0.0 m
|
Width dependence of DELTACV.
|
|
pdeltacv
|
0.0 m2
|
Area dependence of DELTACV.
|
|
deltalcv
|
0.0 m^DELTALEXPCV
|
Length dependence coefficient of DELTACV.
|
|
deltalexpcv
|
1.0
|
Length dependence exponent coefficient of DELTACV.
|
|
tdeltacv
|
0.0 1/K
|
Temperature coefficient for DELTACV.
|
|
atcv
|
(-1.56e-3) m/s
|
Temperature coefficient for CV saturation velocity.
|
|
latcv
|
0.0 m2/s
|
Length dependence of ATCV.
|
|
watcv
|
0.0 m2/s
|
Width dependence of ATCV.
|
|
patcv
|
0.0 m3/s
|
Area dependence of ATCV.
|
|
atlcv
|
0.0 m
|
Length Scaling parameter for ATCV.
|
|
submod
|
0
|
0: The equations using B0, B1 and B2 are OFF, other: The equations using B0, B1 and B2 are ON.
|
|
psatbmod
|
0
|
0: clamping for PSATB OFF, other: clamping for PSATB ON.
|
|
cvsatmod
|
0
|
0: Tunability for Cgg@vds!=0 OFF, other: Tunability for Cgg@vds!=0 ON.
|
|
voffmod
|
0
|
0: Tuning flexibility for GmOvId OFF, other: enhancement ON.
|
|
tempmod
|
0
|
0: Temperature dependence on ATCV OFF, other: enhancement ON.
|
|
flkmod
|
0
|
0: Flicker noise enhancement OFF, other: enhancement ON.
|
|
flkmnudmod
|
0
|
0: Flicker noise enhancement due to MNUD1 and MNUD OFF, other: enhancement ON.
|
|
flkedgemod
|
0
|
0: Flicker noise enhancement due to EDGEFET OFF, other: enhancement due to EDGEFET ON.
|
|
tnoimnudmod
|
0
|
0: Thermal noise enhancement due to MNUD and MNUD1 OFF, other: enhancement due to MNUD and MNUD1 ON.
|
|
vfbaccmod
|
0
|
0: VFB for CV acc OFF, other: VFB for CV acc ON.
|
|
abulkmod
|
0
|
0: Binable Abulk effect OFF, other: Binable Abulk effect ON.
|
|
phibcvmod
|
0
|
0: phib in CVMOD=1 is changed, other: phib with NDEPCV is used only in CVMOD=1.
|
|
warnmod
|
0
|
0: Keep original warning message, other: change the specific warning message.
|
|
nsatmod
|
1
|
1: backward compatible model to 106.2 with TSMC Model Enhancement Mode, other: clamping Nsat by 0.0 with Smooth2 function.
|
|
cvaccmod
|
0
|
0: CV acc OFF, other: VFB for CV acc ON.
|
|
subleakmod
|
0
|
correction of the sub-surface leakage, 0: Turn off 1: Turn on.
|
|
tnoienmod
|
0
|
thermal noise tuning enhancement, 0: Turn Off 1: Turn On.
|
|
xnoiw
|
0.0
|
for thermal noise tuning flexibilty.
|
|
xnoik
|
0.0
|
for thermal noise tuning flexibilty.
|
|
igbaccenmod
|
0
|
Igbacc enhancement mode (0: Turn Off 1: Turn On.
|
|
kaccoff
|
0.0
|
Vgs offset to fine tune the shape of Igbacc.
|
|
lkaccoff
|
0.0
|
Length dependence of KACCOFF.
|
|
wkaccoff
|
0.0
|
Width dependence of KACCOFF.
|
|
pkaccoff
|
0.0
|
Area dependence of KACCOFF.
|
|
kacccon
|
0.01
|
|
|
lkacccon
|
0.0
|
|
|
wkacccon
|
0.0
|
|
|
pkacccon
|
0.0
|
|
|
eigbacc
|
0.0
|
Parameter to adjust Igbacc.
|
|
leigbacc
|
0.0
|
Length dependence of EIGBACC.
|
|
weigbacc
|
0.0
|
Width dependence of EIGBACC.
|
|
peigbacc
|
0.0
|
Area dependence of EIGBACC.
|
|
eigbacc2
|
0.0
|
Parameter to fine tune the shape of Igbacc.
|
|
leigbacc2
|
0.0
|
Length dependence of EIGBACC2.
|
|
weigbacc2
|
0.0
|
Width dependence of EIGBACC2.
|
|
peigbacc2
|
0.0
|
Area dependence of EIGBACC2.
|
|
welledgemod
|
0
|
0: Well effect on edge mosfet OFF, other: enhancement ON.
|
|
minrdsmod
|
0
|
Minimum RD/RS mode, 0: Turn off, 1: Turn on.
|
|
kvth0edgewe
|
0.0
|
Threshold Shift parameter due to Well proximity in EDGEFET.
|
|
lkvth0edgewe
|
0.0 m
|
Length dependence of KVTH0EDGEWE.
|
|
wkvth0edgewe
|
0.0 m
|
Width dependence of KVTH0EDGEWE.
|
|
pkvth0edgewe
|
0.0 m2
|
Area dependence of KVTH0EDGEWE.
|
|
k2edgewe
|
0.0
|
Vth shift due to Vertical Non-uniform doping due to Well proximity in EDGEFET.
|
|
lk2edgewe
|
0.0 m
|
Length dependence of K2EDGEWE.
|
|
wk2edgewe
|
0.0 m
|
Width dependence of K2EDGEWE.
|
|
pk2edgewe
|
0.0 m2
|
Area dependence of K2EDGEWE.
|
|
abulk
|
1.0
|
For flexibility of tuning Cgg in strong inversion.
|
|
c0
|
0.0 V
|
Lateral NUD1 voltage parameter.
|
|
lc0
|
0.0 V
|
Length dependence of C0.
|
|
wc0
|
0.0 V
|
Width dependence of C0.
|
|
pc0
|
0.0 V
|
Area dependence of C0.
|
|
c01
|
0.0 V/K
|
Temperature dependence of C0.
|
|
lc01
|
0.0 V/K
|
Length dependence of C01.
|
|
wc01
|
0.0 V/K
|
Width dependence of C01.
|
|
pc01
|
0.0 V/K
|
Area dependence of C01.
|
|
c0si
|
1.0
|
Correction factor for strong inversion used in Mnud1.
|
|
lc0si
|
0.0 V
|
Length dependence of C0SI.
|
|
wc0si
|
0.0 V
|
Width dependence of C0SI.
|
|
pc0si
|
0.0 V
|
Area dependence of C0SI.
|
|
c0si1
|
0.0 /K
|
Temperature dependence of C0SI.
|
|
lc0si1
|
0.0 V
|
Length dependence of C0SI1.
|
|
wc0si1
|
0.0 V
|
Width dependence of C0SI1.
|
|
pc0si1
|
0.0 V
|
Area dependence of C0SI1.
|
|
c0sisat
|
0.0
|
Correction factor for saturation used in Mnud1.
|
|
lc0sisat
|
0.0 V
|
Length dependence of C0SISAT.
|
|
wc0sisat
|
0.0 V
|
Width dependence of C0SISAT.
|
|
pc0sisat
|
0.0 V
|
Area dependence of C0SISAT.
|
|
c0sisat1
|
0.0
|
Temperature dependence of C0SISAT.
|
|
lc0sisat1
|
0.0 V
|
Length dependence of C0SISAT1.
|
|
wc0sisat1
|
0.0 V
|
Width dependence of C0SISAT1.
|
|
pc0sisat1
|
0.0 V
|
Area dependence of C0SISAT1.
|
|
hvmod
|
0
|
High Voltage series resistance model, 0: Turn Off 1: Turn On.
|
|
hvcap
|
0
|
High Voltage capacitance model. 0: Turn Off 1: Turn On.
|
|
hvcaps
|
0
|
High Voltage capacitance model at source side. 0: Turn Off 1: Turn On.
|
|
rbodyhvmod
|
0
|
High Voltage drain and body resistance model, 0: Turn Off 1: Turn On.
|
|
iimod
|
0
|
Flag for impact ionization in the drift region 0: Turn-Off, 1: Turn On.
|
|
vcovd
|
0.0 V
|
|
|
pcovd
|
0.0
|
|
|
vcovs
|
0.0 V
|
|
|
pcovs
|
0.0
|
|
|
ndriftd
|
5.0e16 per m2
|
Charge density in the drift region.
|
|
vdrift
|
1.0e5 m/sec
|
Saturation velocity in the drift region.
|
|
ptwghv
|
0.0
|
VDRIFT variation with gate bias.
|
|
ptwghv1
|
0.0
|
VDRIFT variation with gate bias.
|
|
psatxhv
|
60.0
|
Fine tuning of PTWGDR effect.
|
|
mdrift
|
1.0
|
Non-linear resistance parameter.
|
|
ndrifts
|
5.0e16 per m2
|
Charge density in the source side drift region.
|
|
rdlcw
|
100.0 Ω μm^WR
|
'R'esistance of the 'D'rain side drift region at 'L'ow 'C'urrent.
|
|
rslcw
|
0 Ω μm^WR
|
'R'esistance of the 'S'ource side drift region at 'L'ow 'C'urrent.
|
|
pdrwb
|
0
|
Body bias dependence of the drift region resistance.
|
|
vfbdrift
|
(-1) V
|
Flat-band voltage of the drift region.
|
|
vfbov
|
(-1) V
|
Flat-band voltage of the overlap region.
|
|
lover
|
(500*1.0e-9) m
|
Overlap region length.
|
|
loveracc
|
(500*1.0e-9) m
|
Drift region length.
|
|
ndr
|
1e24 1/m3
|
Drift region doping.
|
|
slhv
|
0
|
Parameter and Flag for controlling slope of accumulation region capacitance. 0: Turn-Off, 1: Turn On.
|
|
slhv1
|
1.0
|
Parameter for slope of the accumulation capacitance.
|
|
alphadr
|
0.0 m/V
|
First parameter of Iii in the drift region.
|
|
betadr
|
0.0 1/V
|
Second parameter of Iii in the drift region.
|
|
prthv
|
0.0
|
Temperature coefficient for drift resistance.
|
|
athv
|
0 m/s
|
Temperature coefficient for drift region saturation velocity.
|
|
hvfactor
|
1e-3
|
|
|
drii1
|
1.0
|
Parameter for carrier concentration for Impact Ionization in the the drift.
|
|
drii2
|
5 V
|
Saturation voltage ~ Esat * L.
|
|
deltaii
|
0.5 V
|
Smoothing parameter.
|
|
asymp
|
0.6
|
Parameter for Asymmetry mode.
|
|
drb1
|
0.0
|
Parameter for body-bias dependence in HVMOD.
|
|
drb2
|
0.0
|
Parameter for body-bias dependence in HVMOD.
|
|
rdvds
|
8 V
|
Parameter for Idriftsat variation with drain voltage.
|
|
gadrift
|
0
|
Parameter for Idriftsat variation with drain voltage.
|
|
xpart
|
0.0
|
Drain-Body Diode partitioning in RBODYHVMOD.
|
|
ags1
|
1.0
|
qs nonlinear term for Id-Vd flexibility.
|
|
eu1
|
0.0
|
Temperature coefficient for EU.
|
|
leu1
|
0.0
|
Length dependence of EU1.
|
|
weu1
|
0.0
|
Width dependence of EU1.
|
|
peu1
|
0.0
|
Area dependence of EU1.
|
|
qrnois
|
1.0
|
Correction factor for flicker noise due to qs.
|
|
lqrnois
|
0.0
|
Length dependence of QRNOIS.
|
|
wqrnois
|
0.0
|
Width dependence of QRNOIS.
|
|
pqrnois
|
0.0
|
Area dependence of QRNOIS.
|
|
qrnoid
|
1.0
|
Correction factor for flicker noise due to qdeff.
|
|
lqrnoid
|
0.0
|
Length dependence of QRNOID.
|
|
wqrnoid
|
0.0
|
Width dependence of QRNOID.
|
|
pqrnoid
|
0.0
|
Area dependence of QRNOID.
|
|
noia1
|
0.0 s^(1-EF)/(eV)^1/m3
|
Flicker noise parameter A.
|
|
noiax
|
1.0e-5
|
Correction factor for flicker noise.
|
|
bfns
|
1.0
|
Flicker noise frequency exponent for Source Resistance.
|
|
bfnd
|
1.0
|
Flicker noise frequency exponent for Drain Resistance.
|
|
kfns
|
0.0
|
Flicker noise coefficient for Source Resistance.
|
|
kfnd
|
0.0
|
Flicker noise coefficient for Drain Resistance.
|
|
afns
|
2.0
|
Flicker noise coefficient for Source Resistance.
|
|
afnd
|
2.0
|
Flicker noise coefficient for Drain Resistance.
|
|
delvfbacc
|
0.0
|
VFB shift at accumulation region.
|
|
dlcacc
|
0.0 m
|
Delta L for CV acc.
|
|
llcacc
|
0.0 m^(1+LLN)
|
Length reduction parameter.
|
|
lwcacc
|
0.0 m^(1+LWN)
|
Length reduction parameter.
|
|
lwlcacc
|
0.0 m^(1+LWN+LLN)
|
Length reduction parameter.
|
|
dwcacc
|
0.0 m
|
Delta W for CV acc.
|
|
wlcacc
|
0.0 m^(1+WLN)
|
Width reduction parameter.
|
|
wwcacc
|
0.0 m^(1+WWN)
|
Width reduction parameter.
|
|
wwlcacc
|
0.0 m^(1+WWN+WLN)
|
Width reduction parameter.
|
|
naedge
|
1.0
|
Flicker noise parameter A ratio for EDGEFET.
|
|
nbedge
|
1.0
|
Flicker noise parameter B ratio for EDGEFET.
|
|
ncedge
|
1.0
|
Flicker noise parameter C ratio for EDGEFET.
|
|
sslmod
|
0
|
Sub-Surface Leakage Drain Current,0: Turn off 1: Turn on.
|
|
ndepedge
|
1e24 1/m2
|
EDGEFET NDEP.
|
|
lndepedge
|
0.0 1/m2
|
Length dependence of EDGEFET NDEP.
|
|
wndepedge
|
0.0 1/m2
|
Width dependence of EDGEFET NDEP.
|
|
pndepedge
|
0.0 1/m
|
Area dependence of EDGEFET NDEP .
|
|
fnoik
|
0.0
|
a offset for flicker.
|
|
kfrs
|
0.0
|
a factor for Rs.
|
|
kfrd
|
0.0
|
a factor for Rd.
|
|
kfds
|
0.0
|
a factor for drain-source terminals.
|
|
afrs
|
2.0
|
a factor of ids for Rs.
|
|
afrd
|
2.0
|
a factor of ids for Rd.
|
|
afds
|
2.0
|
a factor of ids between drain and source terminals.
|
|
efrs
|
1.0
|
an index for Rs.
|
|
efrd
|
1.0
|
an index for Rd.
|
|
efds
|
1.0
|
an index between drain and source terminals.
|
