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version=2
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Model Version.
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level=2
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Model Level.
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compatible=0
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Possible values are SPECTRE and NI.
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abel=0.0 A
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Base-Emitter current: Portion of base-emitter current allocated to extrinsic region.
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af=1.5
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Flicker noise exponent.
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area=1.0
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Device area factor (Does not scale parasitic inductors or capacitors).
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cjc=0.0 F
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Base-collector capacitance: zero-bias capacitance.
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cje=0.0 F
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Base-emitter capacitance: zero-bias capacitance.
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cjs=0.0 F
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Substrate depletion capacitance at zero voltage.
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cpbc=0.0 F
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Parasitic / fringing base-collector capacitance.
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cpbe=0.0 F
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Parasitic / fringing base-emitter capacitance.
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cpce=0.0 F
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Parasitic / fringing collector-emitter capacitance.
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dtmax=500 C
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Alias of ETMAXTEMP. Maximum temperature rise above heatsink in Celsius degrees.
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etmaxtemp=500 C
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Maximum temperature rise above heatsink in Celsius degrees.
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eaa=0.0 V
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Temperature dependence of ISA.
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eab=0.0 V
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Temperature dependence of ISB.
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ffe=1.0
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Flicker noise frequency exponent.
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ics=1.0e-30 A
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Saturation value for collector-substrate current.
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ik=1e10 A
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High current roll-off in Beta.
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ikrk=1e3 A
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Kirk effect: critical current for Kirk effect at Vbc=0.
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imax=10.0 A
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Explosion current.
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is=1e-25 A
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Collector-Emitter current: Forward collector saturation current.
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isa=1e10 A
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Base-emitter heterojunction saturation current (BE barrier effects).
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isb=1e10 A
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Base-collector heterojunction saturation current (BC barrier effects).
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isc=1e-30A
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Base-Collector current: Non-ideal base-collector saturation current.
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ise=1e-30 A
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Base-Emitter current: Non-ideal base-emitter current.
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itc=0 A
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Collector transit time: midpoint in collector current between TFC0 and TCMIN.
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itc2=0 A
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Collector transit time: transition width in collector current between TFC0 and TCMIN.
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kf=0
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Flicker noise coefficient.
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lpb=0 H
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Parasitic base inductance.
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lpc=0 H
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Parasitic collector inductance.
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lpe=0 H
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Parasitic emitter inductance.
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mjc=0.33
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Base-collector capacitance: grading factor (0.1<MJC).
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mje=0.5
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Base-emitter capacitance: grading factor (0.1<MJE).
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mjs=0.5
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Exponent for voltage variation of C-S Cj.
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na=2
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Base-emitter heterojunction ideality factor.
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nb=2
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Base-collector heterojunction ideality factor.
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nc=2
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Base-Collector current: Non-ideal base-collector current ideality factor.
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ncs=2
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Ideality factor for collector-substrate current.
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ne=2
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Base-Emitter current: Non-ideal base-emitter current ideality factor.
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nf=1
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Collector-Emitter current: Forward collector current ideality factor.
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nr=1
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Collector-Emitter current: Reverse emitter current ideality factor.
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rbi=0 W
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Intrinsic base resistance.
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rbx=0 W
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Extrinsic base resistance.
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rci=0 W
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Intrinsic collector resistance.
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rcx=0 W
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Extrinsic collector resistance.
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re=0 W
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Emitter resistance.
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tbp=298.15 K
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Base-plate temperature. Specifying this parameter enables partial Self Heating. Self-consistent (or dynamic) temperature is obtained by adding temperature rise due to power dissipation and TBP.
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tfb=0 s
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Base transit time: delay through the base.
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tfc0=0 s
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Collector transit time: low current transit time.
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tkrk=0 s
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Kirk effect: Kirk effect delay time.
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tnom=27 C
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Parameters measurement temperature. Default value is set by options.
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tr=0.35e-9 s
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Reverse transit time.
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tvjc=0 V/K
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Rate of change in temperature of VJC (Volt/K).
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tvje=0 V/K
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Rate of change in temperature of VJE (Volt/K).
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tvjs=0 V/K
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Coefficient for VJS temperature dependence.
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vaf=1000 V
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Forward Early voltage.
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var=1000 V
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Reverse Early voltage.
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vjc=1.4 V
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Base-collector capacitance: built-in voltage.
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vje=1.6 V
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Base-emitter capacitance: built-in voltage.
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vjs=1.4 V
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Built-in potential for substrate capacitance.
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vkrk=10.0 V
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Kirk effect: rate of change of IKRK with Vcb.
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xrb=0
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Temperature exponent for RBI and RBX.
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xrc=0
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Temperature exponent for RCI and RCX.
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xre=0
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Temperature exponent for RE.
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xikrk=0
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Alias of XTIKRK. Temperature exponent for IKRK.
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xtikrk=0
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Temperature exponent for IKRK.
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xitc=0
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Alias of XTITC. Temperature exponent for ITC.
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xtitc=0
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Temperature exponent for ITC.
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xitc2=0
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Alias of XTITC2. Temperature exponent for ITC2.
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xtitc2=0
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Temperature exponent for ITC2.
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xttkrk=0
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Temperature exponent for TKRK.
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xtkrk=0
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Alias of XTTKRK. Temperature exponent for TKRK.
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xtvkrk=0
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Temperature exponent for VKRK.
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xvkrk=0
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Alias of XTVKRK. Temperature exponent for VKRK.
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selft=0
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Self-Heating flag.
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bkdn=0
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Breakdown current flag.
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ext_flag=0
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ADS-Extensions flag.
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compat=0
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Compatible flag.
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partialsh=0
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Partial self-heating flag.
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nflag=0
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Noise flag.
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type=1
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Transistor type. Possible values are pnp and npn.
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bf=10000 A/A
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Forward ideal current gain (beta).
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br=10000 A/A
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Reverse ideal current gain.
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isex=1e-30 A
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Saturation current for emitter leakage diode.
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nex=2
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Ideality factor for emitter leakage diode.
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iscx=1e-30 A
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Saturation current for extrinsic BC junction current.
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ncx=2
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Ideality factor for extrinsic BC junction current.
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fa=0.9
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Factor to specify avalanche voltage.
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bvc=1000 V
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C-B breakdown voltage (BVcb0); positive.
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nbc=8
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Exponent for BC multiplication factor vs. voltage.
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rex=1e-3 W
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Extrinsic emitter leakage diode series resistance.
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cemin=1e-40 F
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Min value of intrinsic BE capacitance.
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fce=0.8
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Factor for BE capacitance approximation near Vbi.
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ccmin=1e-40 F
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Min value of intrinsic BC capacitance.
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fc=0.8
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Factor for BC capacitance approximation near Vbi.
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cjcx=0.0 F
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Extrinsic BC capacitance at zero voltage.
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vjcx=1.4 V
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Extrinsic BC capacitance Vbi.
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mjcx=0.33
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Extrinsic base-collector capacitance: grading factor (0.1<MJCX).
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cxmin=1e-40 F
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Minimum extrinsic BC capacitance.
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xcjc=1
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Factor for partitioning BC capacitance.
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tbcxs=0
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Excess BC transit time.
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tbexs=0
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Excess BE transit time.
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icrit0=1e3 A
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Critical current for junction capacitance.
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vtc=1e3 V
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Characteristic voltage for TFC.
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trx=0 s
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Reverse storage time for extrinsic BC diode.
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fex=0 s
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Excess phase factor.
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rth=1e-8 W
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Thermal resistance of device.
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cth=1e-6 F
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Thermal capacitance of device.
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xti=2
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Exponent for IS temperature dependence.
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xtb=2
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Exponent for beta temperature dependence.
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tnc=0
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Coefficient for NC temperature dependence.
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tne=0
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Coefficient for NE temperature dependence.
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tnex=0
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Coefficient for nex temperature dependence.
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eg=1.5 V
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Activation energy for IS temperature dependence.
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eac=0 V
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Activation energy for ISC temperature dependence.
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eae=0 V
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Activation energy for ISE temperature dependence.
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eax=0 V
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Activation energy for ISEX temperature dependence.
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xrex=0
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Coefficient for REX temperature dependence.
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tvjcx=0 V/C
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Coefficient for VJCX temperature dependence.
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xttf=0
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Coefficient for TF temperature dependence.
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xrt=0
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Coefficient for RTH temperature dependence.
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tvpe=0 V/K
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Rate of change in temperature of VPTE (Volt/K).
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tvpc=0 V/K
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Rate of change in temperature of VPTC (Volt/K).
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ege=1.55 V
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Effective emitter bandgap parameter.
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tnf=0
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Rate of change in temperature of NF.
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xtis=3
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Temperature exponent for IS.
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xtih=4
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Temperature exponent for ISH.
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xtie=3
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Temperature exponent for ISE.
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egc=1.5 V
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Effective collector bandgap parameter.
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tnr=0
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Rate of change in temperature of NR.
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xtir=3
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Temperature exponent for ISR.
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xtic=3
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Temperature exponent for ISC.
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xtirh=4
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Temperature exponent for ISRH.
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xtik3=0
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Temperature exponent for IKDC3.
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xtfb=0
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Temperature exponent for TFB.
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xtcmin=0
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Temperature exponent for TCMIN.
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xtfc0=0
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Temperature exponent for TFC0.
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rth1=1000 W
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Thermal resistance #1 (Kelvin/Watt).
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rth2=0 W
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Thermal resistance #2 (Kelvin/Watt).
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cth1=5e-10 F
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Thermal capacitance #1 (Sec-Amp/Volt).
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cth2=0 F
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Thermal capacitance #2 (Sec-Amp/Volt).
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xth1=0
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Temperature exponent for RTH1.
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xth2=0
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Temperature exponent for RTH2.
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kb=0
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Burst noise coefficient.
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ab=1
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Burst noise exponent.
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fb=1 Hz
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Burst noise corner frequency.
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vtc0inv=0.3 1/V
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Collector transit time: rate of change of TFC0 with Vcb (in inverse voltage) (1/Volt).
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vtr0=2.0
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Collector transit time: transition width in Vcb to VMX0 (models velocity saturation).
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vmx0=2.0
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Collector transit time: maximum Vcb for TFC0 (models velocity saturation).
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vtcmininv=0.5 1/V
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Collector transit time: rate of change of TCMIN with Vbc (in inverse voltage) (1/Volt).
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vtrmin=1
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Collector transit time: transition width in Vcb to VMXMIN (models velocity saturation).
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vmxmin=1
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Collector transit time: maximum Vcb for TCMIN (models velocity saturation).
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vtc2inv=0.1 1/V
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Collector transit time: rate of change of ITC2 with Vcb (in inverse voltage) (1/Volt).
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vtcinv=0.1 1/V
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Collector transit time: rate of change of ITC with Vcb (in inverse voltage) (1/Volt).
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fextc=0.8
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Collector transit time: fraction of the collector transit time charge allocated to the base-collector junction.
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ikrktr=1.0e-6
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Kirk effect: transition width to prevent Ikirk=0 (use sparingly).
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vkrk2inv=0.2 1/V
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Kirk effect: rate of change of TKRK with Vcb (in inverse voltage) (1/Volt).
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gkrk=4
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Kirk effect: exponent of Kirk effect delay.
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vktr=1.0
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Kirk effect: transition width in Vcb to VKMX.
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vkmx=1.0 V
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Kirk effect: maximum Vcb for TKRK.
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fexke=0.2
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Kirk effect: fraction of the Kirk effect charge allocated to the base-collector junction.
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tcmin=5.0e-13
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Collector transit time: high current transit time.
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fextb=0.2
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Base transit time: fraction of base transit time charge allocated to the base-collector junction.
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ccmax=9.0e-14 F
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Base-collector capacitance: maximum value in forward bias.
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vptc=3.0 V
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Base-collector capacitance: punchthrough voltage.
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mjcr=0.03
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Base-collector capacitance: grading factor beyond punchthrough.
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abcx=0.75
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Ratio between extrinsic and total base-collector regions.
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cemax=1.0e-13 F
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Base-emitter capacitance: maximum value in forward bias.
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vpte=1.0 V
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Base-emitter capacitance: punchthrough voltage.
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mjer=0.05
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Base-emitter capacitance: grading factor beyond punchthrough.
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abex=0
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Base-emitter capacitance: ratio between extrinsic and total base-emitter regions.
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ikdc1=1.0
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Soft knee effect: Transition width in Ic of q3 function.
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ikdc2inv=0.0
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Soft knee effect: Slope of q3 function (1/Amp).
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ikdc3=1.0 A
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Soft knee effect: Critical current at which soft knee effect occurs at Vcb=VJC.
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vkdcinv=0.1 1/V
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Soft knee effect: Transition width of Vcb (in inverse voltage) (1/Volt).
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nkdc=3.0
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Soft knee effect: maximum value of q3.
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gkdc=0.0
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Soft knee effect: Exponent of q3 factor in base current.
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isr=1e-15 A
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Collector-Emitter current: Reverse emitter saturation current.
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isrl=0 A
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ish=1e-27 A
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Base-Emitter current: Ideal base-emitter current.
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nh=1
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Base-Emitter current: Ideal base-emitter current ideality factor.
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isrh=1e-25 A
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Base-Collector current: Ideal base-collector saturation current.
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nrh=2
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Base-Collector current: Ideal base-collector current ideality factor.
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