Temperature Effect on Model Parameters

You can set both the model and the instance temperatures with the trise parameter. If the instance trise is specified, it overrides the model trise. The device temperature T is calculated by

(-38)

where T_ambient is the global temperature set by the simulator.

Mobility and Transconductance Parameters

(-39)

(-40)

where ute is the exponent parameter. Default value of ute is -1.5.

Energy Band Gap

(-41)

Surface Potential

(-42)

where

(-43)

(-44)

(-45)

(-46)

(-47)

(-48)

where

(-49)

Built-in Voltage of Source/Drain Junctions

If tlevc = 0,

(-50)

(-51)

If tlevc = 1,2,

(-52)

(-53)

If tlevc = 3,

(-54)

(-55)

where

(-56)

(-57)

where

(-58)

(-59)

Junction Leakage Currents

(-60)

(-61)

where

(-62)

Junction Capacitances

If tlevc = 0

(-63)

(-64)

(-65)

(-66)

If tlevc = 1

(-67)

(-68)

(-69)

(-70)

If tlevc = 2,

(-71)

(-72)

(-73)

(-74)

If tlevc = 3,

(-75)

(-76)

(-77)

(-78)

Channel Length Modulation

(-79)

(-80)

Threshold Voltage

If tlev = 0,

(-81)

(-82)

If tlev = 1,

(-83)

(-84)

If tlev = 2,

(-85)

(-86)

Drain and Source Parasitic Resistance

(-87)

(-88)

Critical Field

(-89)

Related Topics

Common MOSFET Equations

Source/Drain Bulk Junction Models

Noise Model

Parameters Common to BSIM1 and BSIM2 Models

Return to top