Product Documentation
Spectre Circuit Simulator Components and Device Models Reference
Product Version 23.1, June 2023

Gate Leak Currents

This section describes the parameters and equations for gate leak currents.

Instance Parameters

Parameter Description

Aforward

Forward gate leakage current coefficient. Default value is 0.0.

Areverse

Reverse gate leakage current coefficient. Default value is 0.0.

If Aforward and Areverse are both 0.0, gate leak current is also 0.0.

Model Parameters

Parameter Description

Bforward

Forward gate leakage current coefficient in pow(). Default value is 0.0.

Breverse

Reverse gate leakage current coefficient in pow(). Default value is 0.0.

Cforward

Forward gate leakage current coefficient in exp(). Default value is 0.0.

Creverse

Reverse gate leakage current coefficient in exp(). Default value is 0.0.

Tcc

Gate leakage current temperature coefficient. Default value is 0.0.

Leak current between Gate and Drain

If Vgd>0

(-232)

If Vgd<0

(-233)

If Vgd=0

Igd=0.0

Leak current between Gate and Source

(-234)

If Vgs<0

(-235)

If Vgs=0

Igs=0.0

(-236)

For Igcmod=1

(-237)

For Igcmod=2

(-238)

(-239)

(-240)

Then

(-241)

(-242)

Igs and Igd

Igs represents the gate tunneling current between the gate and source diffusion region, while Igd represents the gate tunneling current between the gate and the drain diffusion region.

(-243)

(-244)

where

(-245)

Igb

Igb=Igbacc+Igbinv

Igbacc is determined by ECB (Electronic tunneling from Conduction band) and is significant in accumulation and given by:

(-246)

Where

(-247)

(-248)

(-249)

Igbinv is determined by EVB (Electron tunneling from valence band) and is significant in inversion and given by:

(-250)

Where

(-251)

Related Topics

BSIM3v3 Level-11 Model (bsim3v3)

LOD Model

Nonquasi-static (NQS) Model

Differences between BSIM3v3 Subversions


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