Gate Leak Currents
This section describes the parameters and equations for gate leak currents.
Instance Parameters
| Parameter | Description |
|---|---|
|
Forward gate leakage current coefficient. Default value is |
|
|
Reverse gate leakage current coefficient. Default value is |
If Aforward and Areverse are both 0.0, gate leak current is also 0.0.
Model Parameters
Leak current between Gate and Drain
Leak current between Gate and Source
-
Otherwise,
Igc
If IgcModel=0 and Igbmodel=0, the above equations apply.
Otherwise, the following equations apply.
Igc=Igcs+Igcd
Igs and Igd
Igs represents the gate tunneling current between the gate and source diffusion region, while Igd represents the gate tunneling current between the gate and the drain diffusion region.
Igb
Igbacc is determined by ECB (Electronic tunneling from Conduction band) and is significant in accumulation and given by:
Igbinv is determined by EVB (Electron tunneling from valence band) and is significant in inversion and given by:
Related Topics
BSIM3v3 Level-11 Model (bsim3v3)
Differences between BSIM3v3 Subversions
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