k1

0.53V^1/2 (LEVEL=49/53)

1.90923V^1/2 (LEVEL=11)

Body-effect coefficient

k2

0.0186 (LEVEL=49/53)

-0.33 (LEVEL=11)

Charge-sharing parameter

vfbflag

0 (LEVEL=49/53)

Vfb selector

binflag

0 (LEVEL=49/53)

Binning factor

lref

1.0e20 (LEVEL=49/53)

Binning length factor

minr

0.1 Ohm (LEVEL=11)

1e-5 Ohm (LEVEL=49/53)

Minimum source/drain resistance

js

0A/m2 (LEVEL=49)

1e-4A/m2 (LEVEL=53)

Bulk junction reverse saturation current density

f

1.0e20 (LEVEL=49/53)

Binning width factor

is

1e-14 (LEVEL=11)

Bulk junction reverse saturation current

pb

1V (LEVEL=11/53)

0.8V (LEVEL=49)

Bulk junction built-in potential

cjsw

5e-10F/m (LEVEL=11/53)

0F/m (LEVEL=49)

Zero-bias junction sidewall capacitance density

capmod

2 (LEVEL=11)

3 (LEVEL=49/53)

Intrinsic charge model

xpart

0 (LEVEL=11/53)

1 (LEVEL=49)

Drain/source channel charge partition in saturation for BSIM charge model. Use 0.0 for 40/60, 0.5 for 50/50, or 1.0 for 0/100.

version

3.1(LEVEL=11)

3.2(LEVEL=49/53)

Model version selector. The available versions are 3.1, 3.2, 3.21,3.22, 3.23, 3.24 and 3.3.

paramchk

1 (LEVEL=11)

0 (LEVEL=49/53)

Model parameter checking selector

acm

0 (LEVEL=11/49)

10 (LEVEL=53)

BSIM3v3 area calculation method selector

calcacm

0 (LEVEL=49/53)

geometry factor

eg

1.12452V (LEVEL=11)

1.16V (LEVEL=49/53)

Energy band gap

diomod

1 (LEVEL=11/49)

0 (LEVEL=53)

Flag to select junction model:

When diomod=1, the junction model described in Common MOSFET Equations section is used.

When diomod=0, the Berkeley junction model is used.

When diomod=100, the TSMC special diode model is used.

xti

3 (LEVEL=11/53)

0 (LEVEL=49)

Saturation current temperature exponent

nlev

2.0 (LEVEL=49/53)

Noise selector

gdsnoi

1.0 (LEVEL=49/53)

Channel thermal noise coefficient for 49 noise