22

---

BSIM4 Level-14 Model (bsim4)

---

BSIM4 model, as the extension of BSIM3v3 model, addresses more physical effects for MOSFET device of 100 nm and beyond. Gate leakage, layout dependent effects, high-K, and so on, are modeled in BSIM4.

Click the following links for information about the BSIM4 model:

• Instance
  • Instance syntax
• Model
  • Model syntax
  • Auto Model Selection
• Equivalent Circuit
• Device Regions
• Global Control Options
• JUNCAP Model
• TMI 1.0 Model
• TMI 2.0 Model
• Model Version Update
  • Version 4.30
  • Version 4.40
  • Version 4.50
  • Version 4.60
  • Version 4.61
  • Version 4.62
  • Version 4.63
  • Version 4.64
  • Version 4.65
  • Version 4.70
  • Version 4.80
  • Version 4.81
• Model Equations
  • Effective Oxide Thickness, Channel Length and Channel Width
  • Threshold Voltage Model
  • Channel Charge and Subthreshold Swing Models
  • Gate Direct Tunneling Current Model
  • Drain Current Model
  • Body Current Model
  • Capacitance Model
  • Overlap Capacitance Models
  • High Speed/RF Models
  • Noise Models
  • Asymmetric MOS Junction Diode Models
  • Layout Dependent Parasitics Models
  • Temperature Effects Models
  • Stress Effects Models
  • Well Proximity Effect Model
  • TMIBSIM4 Model (tmibsim4)
• Models and Equations in Version Updates
• Component Statements

Return to top