Component Statements

This device is supported within altergroups.

Instance Syntax

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

`w (m)`	Channel width.
`l (m)`	Channel length.
`as (m`²`)`	Area of source diffusion.
`ad (m`²`)`	Area of drain diffusion.
`ps (m)`	Perimeter of source diffusion.
`pd (m)`	Perimeter of drain diffusion.
`nrd`	Number of squares of drain diffusion.
`nrs`	Number of squares of source diffusion.
`rdc=0.0` Ω	Drain contact resistance.
`rsc=0.0` Ω	Source contact resistance.
`sa=0.0 m`	Distance between OD edge to poly from one side.
`sb=0.0 m`	Distance between OD edge to poly from the other side.
`sd=0.0 m`	Distance between neighbor fingers.
`sa1=0.0 m`	Distance between OD edge to poly from one side 1.
`sa2=0.0 m`	Distance between OD edge to poly from one side 2.
`sa3=0.0 m`	Distance between OD edge to poly from one side 3.
`sa4=0.0 m`	Distance between OD edge to poly from one side 4.
`sa5=0.0 m`	Distance between OD edge to poly from one side 5.
`sa6=0.0 m`	Distance between OD edge to poly from one side 6.
`sa7=0.0 m`	Distance between OD edge to poly from one side 7.
`sa8=0.0 m`	Distance between OD edge to poly from one side 8.
`sa9=0.0 m`	Distance between OD edge to poly from one side 9.
`sa10=0.0 m`	Distance between OD edge to poly from one side 10.
`sb1=0.0 m`	Distance between OD edge to poly from other side 1.
`sb2=0.0 m`	Distance between OD edge to poly from other side 2.
`sb3=0.0 m`	Distance between OD edge to poly from other side 3.
`sb4=0.0 m`	Distance between OD edge to poly from other side 4.
`sb5=0.0 m`	Distance between OD edge to poly from other side 5.
`sb6=0.0 m`	Distance between OD edge to poly from other side 6.
`sb7=0.0 m`	Distance between OD edge to poly from other side 7.
`sb8=0.0 m`	Distance between OD edge to poly from other side 8.
`sb9=0.0 m`	Distance between OD edge to poly from other side 9.
`sb10=0.0 m`	Distance between OD edge to poly from other side 10.
`sw1=0.0 m`	Width of SA1/SB1.
`sw2=0.0 m`	Width of SA2/SB2.
`sw3=0.0 m`	Width of SA3/SB3.
`sw4=0.0 m`	Width of SA4/SB4.
`sw5=0.0 m`	Width of SA5/SB5.
`sw6=0.0 m`	Width of SA6/SB6.
`sw7=0.0 m`	Width of SA7/SB7.
`sw8=0.0 m`	Width of SA8/SB8.
`sw9=0.0 m`	Width of SA9/SB9.
`sw10=0.0 m`	Width of SA10/SB10.
`isnoisy=yes`	Should device generate noise. Possible values are `yes` and `no`.
`m=1`	Multiplicity factor (number of MOSFETs in parallel).
`region=triode`	Estimated operating region. %Z outputs the number (0-4) in a rawfile. Possible values are `off`, `triode`, `sat`, `subth`, and `breakdown`.
`trnqsmod`	Transient NQS model selector.
`acnqsmod`	AC small-signal NQS model selector.
`trise (C)`	Temperature rise from ambient.
`dtemp (C)`	Alias for trise.
`deltox=0 m`	Shift in gate electrical/physical equivalent oxide thickness (for both TOXE and TOXP).
`rgatemod`	Gate resistance model selector.
`rbodymod`	Substrate resistance network model selector.
`geomod`	Geometry-dependent parasitics model selector.
`stimod`	LOD stress effect model selector.
`rgeomod`	Diffusion resistance and contact model selector.
`rbpb (`Ω`)`	Resistance connected between bNode' and bNode.
`rbpd (`Ω`)`	Resistance connected between bNode' and dbNode.
`rbps (`Ω`)`	Resistance connected between bNode' and sbNode.
`rbdb (`Ω`)`	Resistance connected between dbNode and bNode.
`rbsb (`Ω`)`	Resistance connected between sbNode and bNode.
`nf`	Number of device fingers.
`min`	If set to 0, minimizes the number of drain or source diffusions for even numbered fingered devices.
`delvto=0.0 V`	Shift in zer0-bias threshold voltage vth0.
`mulmu0=1.0`	Mobility multiplier; alias of mulu0.
`mulvsat=1.0`	Vsat multiplier.
`mulu0=1.0`	Mobility multiplier.
`mulid0=1.0`	Ids multiplier.
`mulbeta=1.0`	Beta multiplier.
`delk1=0.0` `V`	Shift in body bias coefficient k1.
`delnfct=0.0`	Shift in subthreshold swing factor nfactor.
`deleta0=0.0`	Shift in DIBL coefficient subthreshold region.
`sca=0.0`	Integral of the first distribution function for scattered well dopant.
`scb=0.0`	Integral of the second distribution function for scattered well dopant.
`scc=0.0`	Integral of the third distribution function for scattered well dopant.
`sc=0.0 m`	Distance to a single well edge.
`xgw=0.0 m`	Distance from the gate contact to the channel edge.
`ngcon=1.0`	Number of gate contacts.

Model Syntax

model modelName bsim4 parameter=value ...

Model Parameters

Device type parameters

type=n

Transistor type. Possible values are n and p.

Model Selectors & Controller

`level=14`	Model level selector for SPICE compatibility.
`version=4.21`	Model parameter "version" only accepts real number value, like 4.21 for version=4.2.1. The available versions are 4.00(4.0.0), 4.10(4.1.0), 4.20(4.2.0), 4.21(4.2.1), 4.30(4.3.0), 4.40(4.4.0), 4.50(4.5.0), 4.60(4.6.0), 4.61(4.6.1), 4.62(4.6.2), 4.63(4.6.3), 4.64(4.6.4), 4.65(4.6.5), 4.70(4.7.0), 4.80(4.8.0), 4.81(4.8.1) and 4.82(4.8.2).
`binunit=1`	Bin parameter unit selector. 1 for microns and 2 for meters.
`paramchk=1`	Switch for parameter value check. Set to 1 to turn on parameter checking.
`mobmod=0`	Mobility model selector. Valid values are between 0 and 6. Values 4, 5, and 6 are valid only since version 4.8.0.
`cvchargemod=0.0`	Capacitance charge model selector.
`mtrlmod=0.0`	Parameter for non-silicon substrate or metal gate selector.
`mtrlcompatmod=0`	New material mod backward compatibility model selector.
`rdsmod=0`	Bias-dependent source/drain resistance model selector.
`igcmod=0`	Gate-to-channel tunneling model selector.
`igbmod=0`	Gate-to-substrate tunneling model selector.
`capmod=2`	Capacitance model selector.
`rgatemod=0`	Gate resistance model selector.
`rbodymod=0`	Substrate resistance network model selector.
`trnqsmod=0`	Transient Non-quasi static model selector. Set to 1 to turn on nqs.
`acnqsmod=0`	Ac non-quasi static model selector. Set to 1 to turn on nqs.
`fnoimod=1`	Flicker noise model selector.
`tnoimod=0`	Thermal noise model selector.
`diomod=1`	Source/Drain junction diode IV model selector.
`tempmod=0`	Temperature model selector. 0 for original model and 1 for new format.
`permod=1`	Perimeter model selector.
`geomod=0`	Geometry-dependent parasitics model selector.
`stimod=0`	LOD stress effect model selector. 0 for Berkeley LOD, 1 & 2 for TSMC LOD.
`wpemod=0`	Flag for WPE model. Set WPEMOD=1 to activate this model.
`rgeomod=0`	Diffusion resistance and contact model selector. It serves as the default value of instance `rgeomod`.
`flkmod=0`	Flicker noise model.
`fullreinit=0`	Model parameter full reinit selector.
`updatelevel=0`	Model update selector. Available versions are 0, 1, and 2.
`eglev=0`	DC temperature selector.
`minr=0.001` Ω	Minimum source/drain resistance.

Process parameters

`epsrox=3.9`	Gate dielectric constant.
`epsrgate=11.7`	Dielectric constant of gate relative to vacuum.
`epsrsub=11.7`	Dielectric constant of substrate relative to vacuum.
`eot=1.5e-9 m`	Equivalent gate oxide thickness in meters.
`toxe=3.0e-9 m`	Electrical gate equivalent oxide thickness.
toxp=`toxem'	Physical gate equivalent oxide thickness.
toxm=`toxem'	Toxe at which parameters were extracted.
`dtox=0.0 m`	Difference between electrical and physical gate oxide thickness.
`xj=0.15e-6 m`	Source/drain junction depth.
`gamma1 (``V )`	Body-effect coefficient near the surface.
`gamma2 (``V )`	Body-effect coefficient in the bulk.
`ndep=1.7e17 cm`^-3	Channel doping concentration at depletion edge for zero body bias.
`nsub=6.0e16 cm`^-3	Substrate doping concentration.
`ngate=0.0 cm`^-3	Poly Si gate doping concentration.
`nsd=1.0e20 cm`^-3	Source-drain doping concentration.
`vbx (V)`	Vbs at which the depletion region width equals XT.
`xt=1.55e-7 m`	Doping depth.
`rsh=0.0` Ω`/sqr`	Source/drain sheet resistance.
`rshg=0.1` Ω`/sqr`	Gate electrode sheet resistance.
`lint=0.0 m`	Lateral diffusion for one side.
`wint=0.0 m`	Width reduction for one side.
`wl=0.0 m^wln`	Length dependence of delta W.
`wln=1.0`	Length exponent of delta W.
`ww=0.0 m^wwn`	Width dependence of delta W.
`wwn=1.0`	Width exponent of delta W.
`wwl=0.0 m^(wwn+wln)`
	Area dependence of delta W.
`ll=0.0 m^lln`	Length dependence of delta L.
`lln=1.0`	Length exponent of delta L.
`lw=0.0 m^lwn`	Width dependence of delta L.
`lwn=1.0`	Width exponent of delta L.
`lwl=0.0 m^(lln+lwn)`
	Area dependence of delta L.
`dwg=0.0 m/V`	Gate-bias dependence of channel width.
`dwb=0.0 m/``V`	Body-bias dependence of channel width.
`lmlt=1.0`	Length shrink reduction factor.
`wmlt=1.0`	Width shrink reduction factor.

Threshold voltage parameters

`vtho=0.7(nmos) / -0.7(pmos) V`
	Threshold voltage at Vbs=0 for long-channel devices. Alias of vth0.
`vfb=-1.0 V`	Flat-band voltage.
`vddeot=1.5(nmos) / -1.5(pmos) V`
	Voltage for extraction of equivalent gate oxide thickness.
`phin=0.0 V`	Non-uniform vertical doping effect on surface potential.
`k1=0.53` `V`	First-order body bias coefficient.
`k2=-0.0186`	Second-order body bias coefficient.
`k3=80.0`	Narrow width coefficient.
`k3b=0.0 1/V`	Body effect coefficient of K3.
`w0=2.5e-6 m`	Narrow width coefficient.
`lpe0=1.74e-7 m`	Lateral non-uniform doping at Vbs=0.
`lpeb=0.0 m`	Lateral non-uniform doping effect on K1.
`vbm=-3.0 V`	Maximum applied body voltage in VTH0 calculation.
`dvt0=2.2`	First coefficient of short-channel effects.
`dvt1=0.53`	Second coefficient of short-channel effects.
`dvt2=-0.032 1/V`	Body-bias coefficient of short-channel effects.
`dvtp0=0.0 m`	First coefficient of drain-induced Vth shift for long-channel pocket devices.
`dvtp1=0.0 1/V`	Second coefficient of drain-induced Vth shift for long-channel pocket devices.
`dvtp2=0.0`	Third parameter for Vth shift due to pocket.
`dvtp3=0.0`	Fourth parameter for Vth shift due to pocket.
`dvtp4=0.0`	Fifth parameter for Vth shift due to pocket.
`dvtp5=0.0`	Sixth parameter for Vth shift due to pocket.
`dvt0w=0.0`	First coefficient of narrow-width effects.
`dvt1w=5.3e6 1/m`	Second coefficient of narrow-width effects.
`dvt2w=-0.032 1/V`	Body-bias coefficient of narrow-width effects.
`a0=1.0`	Non-uniform depletion width effect coefficient.
`ags=0.0 1/V`	Gate-bias dependence of Abulk.
`b0=0.0 m`	Bulk charge coefficient due to narrow width effect.
`b1=0.0 m`	Bulk charge coefficient due to narrow width effect.
`keta=-0.047 1/V`	Body-bias coefficient for non-uniform depletion width effect.
`a1=0.0 1/V`	First non-saturation effect parameter.
`a2=1.0`	Second non-saturation factor.
`phig=4.05 eV`	The gate work function.
`ni0sub=1.45e10 cm`^-3
	Intrinsic carrier concentration at T=300.15K.
`bg0sub=1.16 eV`	Band-gap of substrate at T=0K.
`tbgasub=7.02e-4 V/K`
	First parameter of band-gap change due to temperature.
`tbgbsub=1108.0 K`	Second parameter of bandgap change due to temperature.
`ados=1.0`	Charge centroid parameter.
`bdos=1.0`	Charge centroid parameter.
`tempeot=300.15 C`	Temperature for extraction of EOT.
`leffeot=1 m`	Effective length for extraction of EOT.
`weffeot=10 m`	Effective width for extraction of EOT.
`vthmod`	Vth output selector. 'std' outputs model equation Vth. 'vthcc' outputs constant current Vth, and may impact simulation performance. The default value is taken from the options parameter 'vthmod'. Possible values are `std` and `vthcc`.
`ivth (A)`	Vth current parameter. The default value is taken from the options parameter 'ivthn' or 'ivthp', depending on the type of the model.
`ivthw (m)`	Width offset for constant current Vth. The default value is taken from the options parameter 'ivthw'.
`ivthl (m)`	Length offset for constant current Vth. The default value is taken from the options parameter 'ivthl'.
`ivth_vdsmin (V)`	Minimum Vds in constant current Vth calculating. The default value is taken from the options parameter 'ivth_vdsmin'.
`acm=12`	Area calculation method selector.
`hdif=0 m`	Length of heavily doped diffusion.
`ldif=0 m`	Lateral diffusion beyond the gate.
`rs=12.5` Ω	Source resistance.
`rd=12.5` Ω	Drain resistance.
`ld (m)`	Lateral diffusion into the channel from the source and drain diffusion.
`trd=0 1/C`	Temperature parameter for drain resistance.
`trs=0 1/C`	Temperature parameter for source resistance.

Mobility parameters

`u0=670(nmos) / 250(pmos)`
	Low-field surface mobility at tnom.
`ua=1.0e-9(mobmod=0,1) / 1.0e-15 (mobmod=2) m/V`
	First-order mobility reduction coefficient.
`ub=1.0e-19 m`²`/V`²
	Second-order mobility reduction coefficient.
`uc=-0.0465 1/V (mobmod=1) / -0.0465e-9 m/V2 (mobmod=0,2)`
	Body-bias dependence of mobility.
`ud=1.0e14 /m`²	Coulomb scattering factor of mobility.
`up=0.0`	Channel length linear factor of mobility.
`lp=1.0e-8 m`	Channel length exponential factor of mobility.
`eu=1.67(nmos) / 1.0(pmos)`
	Exponent for mobility degradation of mobmod=2.
`vsat=8.0e4 m/s`	Carrier saturation velocity at tnom.
`lambda=0.0`	Velocity overshoot coefficient.
`vtl=2.0e5 m/s`	Thermal velocity.
`lc=5.0e-9 m`	Velocity back scattering coefficient.
`xn=3.0`	Velocity back scattering coefficient.
`easub=4.05 eV`	Electron affinity of substrate.
`ucs=1.67(nmos) / 1.0(pmos)`
	Coulomb scattering exponent.
`ucste=-4.775e-3`	Temperature coefficient of coulombic mobility.

Subthreshold parameters

`voff=-0.08 V`	Threshold voltage offset.
`tvoff=0.0 V`	Temperature parameter for voff.
`ltvoff=0.0 V`	Length dependence of tvoff.
`wtvoff=0.0 V`	Width dependence of tvoff.
`ptvoff=0.0 V`	Cross-term dependence of tvoff.
`voffl=0.0 mV`	Channel-length dependence of Voff.
`minv=0.0`	Vgsteff fitting parameter for moderate inversion condition.
`nfactor=1.0`	Subthreshold swing coefficient.
`eta0=0.08`	DIBL coefficient subthreshold region.
`etab=-0.07 1/V`	Body-bias dependence of et0.
dsub=`drout'	DIBL effect in subthreshold region.
`cit=0.0 F/m`²	Interface trap parameter for subthreshold swing.
`cdsc=2.4e-4 F/m`²	Source/drain and channel coupling capacitance.
`cdscb=0.0 F/m`² `V`	Body-bias dependence of cdsc.
`cdscd=0.0 F/m`² `V`	Drain-bias dependence of cdsc.

Output resistance parameters

`pclm=1.3`	Channel length modulation coefficient.
`pdiblc1=0.39`	First coefficient of drain-induced barrier lowering.
`pdiblc2=8.6e-3`	Second coefficient of drain-induced barrier lowering.
`pdiblcb=0.0 1/V`	Body-effect coefficient for DIBL.
`drout=0.56`	DIBL effect on output resistance coefficient.
`pscbe1=4.24e8 V/m`	First coefficient of substrate current body effect.
`pscbe2=1e-5 m/V`	Second coefficient of substrate current body effect.
`fprout=0.0 V/``m`
	Effect of pocket implant on Rout degradation.
`pvag=0.0`	Gate dependence of early voltage.
`delta=0.01 V`	Effective drain voltage smoothing parameter.
`pdits=0.0 1/V`	Effect of pocket implant on Rout degradation.
`pditsl=0.0 1/m`	Channel-length dependence of drain-induced Vth shift on Rout.
`pditsd=0.0 1/V`	Vds dependence of drain-induced Vth shift on Rout.

Bias-dependent Rds parameters

`rdsw=200.0` Ω μ`m^wr`
	Zero bias LDD resistance per unit width for RDSMOD=0.
`rdswmin=0.0` Ω μ`m^wr`
	LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD=0.
`rdw=100.0` Ω μ`m^wr`
	Zero bias LDD resistance per unit width for RDSMOD=1.
`rdwmin=0.0` Ω μ`m^wr`
	LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD=1.
`rsw=100.0` Ω μ`m^wr`
	Zero bias LDD resistance per unit width for RDSMOD=1.
`rswmin=0.0` Ω μ`m^wr`
	LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD=1.
`prwg=1 1/V`	Gate-effect coefficient for Rds.
`prwb=0.0 1/``V`
	Body-effect coefficient for Rds.
`wr=1.0`	Width offset for parasitic resistance.

Substrate current parameters

`alpha0=0.0 A m/V`	Substrate current impact ionization coefficient.
`alpha1=0.0 A/V`	Substrate current impact ionization coefficient.
`beta0=30.0 1/V`	Substrate current impact ionization exponent.

Gate-Induced drain leakage parameters

`gidlmod=0`	Parameter for GIDL selector.
`agidl=0.0 1/`Ω	Pre-exponential coefficient for GIDL.
`bgidl=2.3e9 V/m`	Exponential coefficient for GIDL.
`cgidl=0.5 V`³	Parameter for body-bias effect on GIDL.
`egidl=0.8 V`	Fitting parameter for band bending for GIDL.
`fgidl=0.0 V`	GIDL vb parameter.
`kgidl=0.0 V`	GIDL vb parameter.
`rgidl=1.0`	GIDL vg parameter.
`agisl=agidl 1/`Ω	Pre-exponential coefficient for GISL (bsim4.6).
`bgisl=bgidl V/m`	Exponential coefficient for GISL (bsim4.6).
`cgisl=cgidl V`³	Parameter for body-bias effect on GISL (bsim4.6).
`egisl=egidl V`	Fitting parameter for band bending for GISL (bsim4.6).
`fgisl=fgidl V`	GISL vb parameter.
`kgisl=kgidl V`	GISL vb parameter.
`rgisl=rgidl`	GISL vg parameter.

Gate Tunneling parameters

`aigbacc=0.43` `F/g s/m`
	Parameter for Igb in accumulation.
`bigbacc=0.054` `F/g s/(m V)`
	Parameter for Igb in accumulation.
`cigbacc=0.075 1/V`	Parameter for Igb in accumulation.
`nigbacc=1.0`	Parameter for Igb in accumulation.
`aigbinv=0.35` `F/g s/m`
	Parameter for Igb in inversion.
`bigbinv=0.03` `F/g s/(m V)`
	Parameter for Igb in inversion.
`cigbinv=0.006 1/V`	Parameter for Igb in inversion.
`eigbinv=1.1 V`	Parameter for Igb in inversion.
`nigbinv=3.0`	Parameter for Igb in inversion.
`aigc=0.43(nmos) / 0.31(pmos)` `F/g s/m`
	Parameter for Igcs and Igcd.
`bigc=0.054(nmos) / 0.024(pmos)` `F/g s/(m V)`
	Parameter for Igcs and Igcd.
`cigc=0.075(nmos) / 0.03(pmos) 1/V`
	Parameter for Igcs and Igcd.
`aigsd=0.43(nmos) / 0.31(pmos)` `F/g s/m`
	Parameter for Igs and Igd.
`bigsd=0.054(nmos) / 0.024(pmos)` `F/g s/(m V)`
	Parameter for Igs and Igd.
`cigsd=0.075(nmos) / 0.03(pmos) 1/V`
	Parameter for Igs and Igd.
`aigs=1.36e-2(nmos) / 9.80e-3(pmos)` `F/g s/m`
	Parameter for Igs (bsim4.6).
`bigs=1.71e-3(nmos) / 7.59e-4(pmos)` `F/g s/(m V)`
	Parameter for Igs (bsim4.6).
`cigs=0.075(nmos) / 0.03(pmos) 1/V`
	Parameter for Igs (bsim4.6).
`aigd=1.36e-2(nmos) / 9.80e-3(pmos)` `F/g s/m`
	Parameter for Igd (bsim4.6).
`bigd=1.71e-3(nmos) / 7.59e-4(pmos)` `F/g s/(m V)`
	Parameter for Igd (bsim4.6).
`cigd=0.075(nmos) / 0.03(pmos) 1/V`
	Parameter for Igd (bsim4.6).
dlcig=`Lintm'	Source overlap length for Igs.
`dlcigd=dlcig m`	Drain overlap length for Igd (bsim4.6).
`nigc=1.0`	Parameter for Igcs, Igcd ,Igs, and Igd.
`poxedge=1.0`	Factor for the gate oxide thickness in source/drain overlap regions.
`pigcd=1.0`	Vds dependence of Igcs and Igcd.
`ntox=1.0`	Exponent for the gate oxide ratio.
`toxref=3.0e-9 m`	Nominal gate oxide thickness for gate dielectric tunneling current model only.
`vfbsdoff=0.0 V`	S/D flatband voltage offset.
`tvfbsdoff=0.0 V`	Temperature parameter for vfbsdoff.
`ltvfbsdoff=0.0 V`	Length dependence of tvfbsdoff.
`wtvfbsdoff=0.0 V`	Width dependence of tvfbsdoff.
`ptvfbsdoff=0.0 V`	Cross-term dependence of tvfbsdoff.

Overlap capacitance parameters

`cgso (F/m)`	Non-LDD region source-gate overlap capacitance per unit channel width.
`cgdo (F/m)`	Non-LDD region drain-gate overlap capacitance per unit channel width.
`cgbo=2 Dwc Coxe F/m`
	Non-LDD region drain-gate overlap capacitance per unit channel width.
`meto=0.0 m`	Metal overlap in fringing field.
`cgsl=0.0 F/m`	Overlap capacitance between gate and lightly-doped source region.
`cgdl=0.0 F/m`	Overlap capacitance between gate and lightly-doped drain region.
`ckappas=0.6 V`	Coefficient of bias-dependent overlap capacitance for the source side.
ckappad=`ckappasV'
	Coefficient of bias-dependent overlap capacitance for the drain side.

Charge model selection parameters

`xpart=0.0`	Charge partition number. Use 0.0 for 40/60, 0.5 for 50/50, and 1.0 for 0/100.
`cf (F/m)`	Fringing field capacitance (alias=lx91).
`clc=1e-7 m`	Constant term for the short channel model.
`cle=0.6`	Exponential term for the short channel model.
dlc=`lintm'	Delta L for capacitance model.
dwc=`wintm'	Delta W for capacitance model.
`vfbcv=-1.0`	Flat-band voltage for capmod=0.
`noff=1.0`	Transition parameter.
`voffcv=0.0 V`	CV parameter in VgsteffCV for weak-to-strong inversion.
`minvcv=0.0`	Fitting parameter for moderate inversion condition.
`voffcvl=0.0 V m`	Length dependence parameter for Vth offset in CV.
`acde=1.0 m/V`	Exponential coefficient for charge thickness in CAPMOD=2 for accumulation and depletion regions.
`moin=15.0`	Exponential coefficient for charge thickness for accumulation and depletion regions.
llc=`llm^lln'	Length dependence of delta L for CV.
lwc=`lwm^lwn'	Width dependence of delta L for CV.
lwlc=`lwlm^(lln+lwn)'
	Area dependence of delta L for CV.
wlc=`wlm^wln'	Length dependence of delta W for CV.
wwc=`wwm^wwn'	Width dependence of delta W for CV.
wwlc=`wwlm^(wwn+wln)'
	Area dependence of delta W for CV.

Parasitic resistance parameters

`dmcg=0.0 m`	Distance from S/D contact center to the gate edge.
dmci=`dmcgm'	Distance from S/D contact center to the isolation edge in the channel-length direction.
`dmdg=0.0 m`	Distance from S/D contact center to the gate edge.
`dmcgt=0.0 m`	DMCG of test structures.
dwj=`dwcm'	Offset of the S/D junction width.
`xgw=0.0 m`	Distance from the gate contact to the channel edge.
`xgl=0.0 m`	Offset of gate length due to variations in patterning.
`xl=0.0 m`	Length variation due to masking and etching.
`xw=0.0 m`	Width variation due to masking and etching.
`ngcon=1.0`	Number of gate contacts.
`nf=1`	Number of device fingers. It serves as the default value for instance nf.
`min=0`	If set to 0, minimizes the number of drain or source diffusions for even numbered fingered devices. It serves as the default value for instance min.

Junction diode model parameters

`ijthsrev=0.1 A`	Source diode limiting current in reverse bias region.
ijthdrev=`ijthsrevA'
	Drain diode limiting current in reverse bias region.
`ijthsfwd=0.1 A`	Source diode limiting current in forward bias region.
ijthdfwd=`ijthsfwdA'
	Drain diode limiting current in forward bias region.
`xjbvs=1.0`	Fitting parameter for bulk-source diode breakdown.
`xjbvd='xjbvs'`	Fitting parameter for bulk-drain diode breakdown.
`bv=10.0 V`	Diode breakdown voltage. Alias of bvs.
`bvs=10.0 V`	Source diode breakdown voltage.
`bv_enable=on`	Flag to enable the breakdown of diode. on=breakdown effect enabled, off=breakdown effect disabled. Possible values are `off` and `on`.
`bvd='bvsV'`	Drain diode breakdown voltage.
`is=1.0e-14 A`	Bulk junction reverse saturation current.
`js=1.0e-4 A/m`²	Bottom junction reverse saturation current density. Alias of jss.
`jss=1.0e-4 A/m`²	Source bottom junction reverse saturation current density.
`jsd='jssA/m'`²	Drain bottom junction reverse saturation current density.
`jsws=0.0 A/m`	Isolation-edge sidewall source junction reverse saturation current density.
`jswd='jswsA/m'`	Isolation-edge sidewall drain junction reverse saturation current density.
`jswgs=0.0 A/m`	Gate-edge sidewall source junction reverse saturation current density.
`jswgd='jswgsA/m'`	Gate-edge sidewall drain junction reverse saturation current density.
`jtss=0.0 A/m`²	Source bottom trap-assisted saturation current density.
`jtsd='jtssA/m'`²	Drain bottom trap-assisted saturation current density.
`jtssws=0.0 A/m`	Source isolation-edge sidewall trap-assisted saturation current density.
`jtsswd='jtsswsA/m'`
	Drain isolation-edge sidewall trap-assisted saturation current density.
`jtsswgs=0.0 A/m`	Source Gate-edge isolation-edge sidewall trap-assisted saturation current density.
`jtsswgd='jtsswgsA/m'`
	Drain isolation-edge sidewall trap-assisted saturation current density.
`njts=20.0`	Non-ideality factor for jtss. For TSMC diode model, default=60.0.
`njtssw=20.0`	Non-ideality factor for jtssws. For TSMC diode model, default=60.0.
`njtsswg=20`	Non-ideality factor for jtsswgs. For TSMC diode model, default=60.0.
`njtsd=njts`	Non-ideality factor for jtsd (bsim4.6).
`njtsswd=njtssw`	Non-ideality factor for jtsswd (bsim4.6).
`njtsswgd=njtsswg`	Non-ideality factor for jtsswgd (bsim4.6).
`xtss=0.02`	Power dependence of jtss on temperature.
`xtsd='xtss'`	Power dependence of jtsd on temperature.
`xtssws=0.02`	Power dependence of jtssws on temperature.
`xtsswd='xtssws'`	Power dependence of jtsswd on temperature.
`xtsswgs=0.02`	Power dependence of jtsswgs on temperature.
`xtsswgd='xtsswgs'`
	Power dependence of jtsswgd on temperature.
`vtss=10.0 V`	Source bottom trap-assisted voltage dependent parameter.
`vtsd='vtssV'`	Drain bottom trap-assisted voltage dependent parameter.
`vtssws=10.0 V`	Source STI sidewall trap-assisted voltage dependent parameter.
`vtsswd='vtsswsV'`	Drain STI sidewall trap-assisted voltage dependent parameter.
`vtsswgs=10.0 V`	Source gate-edge sidewall trap-assisted voltage dependent parameter.
`vtsswgd='vtsswgsV'`
	Drain gate-edge sidewall trap-assisted voltage dependent parameter.
`tnjts=0.0`	Temperature coefficient for njts.
`tnjtssw=0.0`	Temperature coefficient for njtssw.
`tnjtsswg=0.0`	Temperature coefficient for njtsswg.
`tnjtsd=tnjts`	Temperature coefficient for njtsd (bsim4.6).
`tnjtsswd=tnjtsssw`
	Temperature coefficient for njtsswd (bsim4.6).
`tnjtsswgd=tnjtsswg`
	Temperature coefficient for njtsswgd (bsim4.6).
`dskip=yes`	Use simple piece-wise linear model for diode currents below 0.1*iabstol. Possible values are `yes` and `no`.
`imelt='imaxA'`	Explosion current.
`jmelt='jmaxA/m'`²
	Explosion current density.
`jtweff=0.0 m`	TAT current width dependence.

TSMC junction diode model parameters

`mnr=21.0`	Fitting parameter for resistance induced non-ideality factor.
`bnr=0.0`	Fitting parameter for resistance induced non-ideality factor.
`cnr=0.0 1/V m`	Fitting parameter for resistance induced non-ideality factor.
`dnr=0.0 1/V`	Fitting parameter for resistance induced non-ideality factor.
`tmnr=0.0`	Temperature coefficient for mnr.
`tcnr=0.0`	Temperature coefficient for cnr.
`tdnr=0.0`	Temperature coefficient for dnr.
`nrfwd=1.0 A/m`²	Source bottom trap-assisted saturation current density.
`jsswg=0.0`	Sidewall-gate junction reverse saturation current density.

Junction capacitance model parameters

`cj=5e-4 F/m`²	Zero bias bottom junction capacitance per unit area. Alias of cjs.
`cjs=5.0e-4 F/m`²	Zero bias source bottom junction capacitance per unit area.
cjd=`cjsF/m'²	Zero bias drain bottom junction capacitance per unit area.
`mj=1/2`	Bottom junction capacitance grading coefficient. Alias of mjs.
`mjs=1/2`	Source bottom junction capacitance grading coefficient.
mjd=`mjs'	Drain bottom junction capacitance grading coefficient.
`pb=1.0 V`	Bottom junction built-in potential. Alias of pbs.
`pbs=1.0 V`	Source bottom junction built-in potential.
pbd=`pbsV'	Drain bottom junction built-in potential.
`fc=0.5`	Forward-bias depletion capacitance threshold.
`cjsw=5e-10 F/m`	Sidewall junction capacitance per unit periphery. Alias of cjsws.
`cjsws=5.0e-10 F/m`	Source sidewall junction capacitance per unit periphery.
cjswd=`cjswsF/m'	Drain sidewall junction capacitance per unit periphery.
`mjsw=0.33`	Isolation-edge sidewall junction capacitance grading coefficient. Alias of mjsws.
`mjsws=0.33`	Isolation-edge sidewall source junction capacitance grading coefficient.
mjswd=`mjsws'	Isolation-edge sidewall drain junction capacitance grading coefficient.
`pbsw=1.0 V`	Isolation-edge sidewall junction built-in potential. Alias of pbsws.
`pbsws=1.0 V`	Isolation-edge sidewall source junction built-in potential.
pbswd=`pbswsV'	Isolation-edge sidewall drain junction built-in potential.
cjswg=`cjswF/m'	Gate-side junction capacitance per unit width. Alias of cjswgs.
cjswgs=`cjswsF/m'
	Gate-side source junction capacitance per unit width.
cjswgd=`cjswgsF/m'
	Gate-side source junction capacitance per unit width.
mjswg=`mjsw'	Gate-edge sidewall junction grading coefficient. Alias of mjswgs.
mjswgs=`mjsws'	Gate-edge sidewall source junction grading coefficient.
mjswgd=`mjswgs'	Gate-edge sidewall junction grading coefficient.
pbswg=`pbswV'	Gate-edge sidewall junction built-in potential. Alias of pbswgs.
pbswgs=`pbswsV'	Gate-edge sidewall source junction built-in potential.
pbswgd=`pbswgsV'	Gate-edge sidewall drain junction built-in potential.
`fcsw=0.5`	Side-wall forward-bias depletion capacitance threshold.

Temperature effects parameters

`tnom (C)`	Parameters measurement temperature. The default value is set by using the options statement.
`trise=0.0 C`	Temperature rise from ambient; alias of dtemp. It serves as the default value for instance trise.
`ute=-1.5`	Mobility temperature exponent.
`kt1=-0.11 V`	Temperature coefficient for threshold voltage.
`kt1l=0.0 V m`	Channel length dependence of the temperature coefficient for threshold voltage.
`kt2=0.022`	Body-bias coefficient of Vth temperature effect.
`ua1=1.0e-9 m/V`	Temperature coefficient for ua. When tempmod=1, units should be 1/C.
`ub1=-1.0e-18 m`²`/V`²
	Temperature coefficient for ub. When tempmod=1, units should be 1/C.
`uc1=-0.056 1/V (mobmod=1) / -5.6e-11 m/V2(modmod=0,2)`
	Temperature coefficient for uc. When tempmod=1, units should be 1/C.
`ud1=0.0 /m`²	Temperature coefficient of ud.
`at=3.3e4 m/s`	Temperature coefficient for vsat. When tempmod=1, units should be 1/C.
`prt=0.0` Ω `m`	Temperature coefficient for Rdsw. If tempmod=1, unit of the parameter is 1/C.
`tlev=0`	DC temperature selector.
`tlevc=0`	AC temperature selector.
`eg=1.124519231 V`	Energy band gap.
`gap1=7.02e-4 V/C`	Band gap temperature coefficient.
`gap2=1108 C`	Band gap temperature offset.
`n=1.0`	Junction emission coefficient. Alias of njs.
`njs=1.0`	Bulk-Source junction emission coefficient.
njd=`njs'	Bulk-Drain junction emission coefficient.
`xti=3`	Saturation current temperature exponent. Alias of xtis.
`xtis=3.0`	Bulk-Source junction saturation current temperature exponent.
xtid=`xtis'	Bulk-Drain junction saturation current temperature exponent.
`pta=0.0 V/C`	Temperature coefficient for pb. Alias of tpb.
`tpb=0.0 V/C`	Temperature coefficient for pb.
`ptp=0.0 V/C`	Temperature coefficient for pbsw. Alias of tpbsw.
`tpbsw=0.0 V/C`	Temperature coefficient for pbsw.
`tpbswg=0.0 V/C`	Temperature coefficient for pbswg.
`cta=0.0 1/C`	Temperature coefficient for cj. Alias of tcj.
`tcj=0.0 1/C`	Temperature coefficient for cj.
`ctp=0.0 1/C`	Temperature coefficient for cjsw. Alias of tcjsw.
`tcjsw=0.0 1/C`	Temperature coefficient for cjsw.
`tcjswg=0.0 1/C`	Temperature coefficient for cjswg.
`tnfactor=0.0`	Temperature parameter for nfactor.
`teta0=0.0`	Temperature parameter for eta0.
`tvoffcv=0.0 1/C`	Temperature parameter for tvoffcv.

LOD model parameters

`saref=1.0e-6 m`	Reference distance between od edge to poly from one side.
`sbref=1.0e-6 m`	Reference distance between od edge to poly from the other side.
`sl=2.0e-6 m`	Character length along length for stress effect.
`lsl=0.0`	Length dependence of sl.
`wsl=0.0`	Width dependence of sl.
`psl=0.0`	Cross-term dependence of sl.
`sw=2.0e-6 m`	Character length along width for stress effect.
`lsw=0.0`	Length dependence of sw.
`wsw=0.0`	Width dependence of sw.
`psw=0.0`	Cross-term dependence of sw.
`sk0=0.0`	First coefficient of stress effect.
`lsk0=0.0`	Length dependence of sk0.
`wsk0=0.0`	Width dependence of sk0.
`psk0=0.0`	Cross-term dependence of sk0.
`sk1=0.0 m`	Length coefficient of stress effect.
`lsk1=0.0`	Length dependence of sk1.
`wsk1=0.0`	Width dependence of sk1.
`psk1=0.0`	Cross-term dependence of sk1.
`sk2=0.0 m`	Width coefficient of stress effect.
`lsk2=0.0`	Length dependence of sk2.
`wsk2=0.0`	Width dependence of sk2.
`psk2=0.0`	Cross-term dependence of sk2.
`k=0.0`	Ratio of velocity/mobility changes for stress.
`lk=0.0`	Length dependence of k.
`wk=0.0`	Width dependence of k.
`pk=0.0`	Cross-term dependence of k.
`wlod=0.0 m`	Length parameter for stress effect.
`ku0=0.0 m`	Mobility degradation/enhancement coefficient for stress effect.
`kvsat=0.0 m`	Saturation velocity degradation/enhancement parameter for stress effect.
`tku0=0.0`	Temperature coefficient of ku0.
`llodku0=0.0`	Length parameter for u0 stress effect.
`wlodku0=0.0`	Width parameter for u0 stress effect.
`kvth0=0.0 V m`	Threshold shift parameter for stress effect.
`llodvth=0.0`	Length parameter for vth stress effect.
`wlodvth=0.0`	Width parameter for vth stress effect.
`stk2=0.0 m`	k2 shift factor related to vth0 change.
`lodk2=1.0`	k2 shift modification factor for stress effect.
`steta0=0.0 m`	eta0 shift factor related to vth0 change.
`lodeta0=1.0`	eta0 shift modification factor for stress effect.

WPE model parameters

`web=0.0`	Coefficient for SCB.
`wec=0.0`	Coefficient for SCC.
`kvth0we=0.0 V`	Threshold shift factor for well proximity effect.
`k2we=0.0`	k2 shift factor for well proximity effect.
`ku0we=0.0`	Mobility degradation factor for well proximity effect.
`scref=1.0e-6 m`	Reference distance to calculate SCA, SCB, and SCC.

Noise model parameters

`noia=6.25e41(nmos) / 6.188e40(pmos) s^(1-EF)/(eV m`²`)`
	Flicker noise parameter A.
`noib=3.125e26(nmos) / 1.5e25(pmos) s^(1-EF)/eV`
	Flicker noise parameter B.
`noic=8.75e9 s^(1-EF) m`²`/eV`
	Flicker noise parameter C.
`em=4.1e7 V/m`	Saturation field.
`af=1.0`	Flicker noise exponent.
`ef=1.0`	Flicker noise frequency exponent.
`kf=0.0 A^(2-EF) s^(1-EF) F`
	Flicker noise coefficient.
`lintnoi=0.0 m`	Lint offset for noise calculation.
`wnoi=1.0e-5 m`	Channel width at which noise parameters were extracted.
`ntnoi=1.0`	Noise factor for short-channel devices for TNOIMOD=0 only.
`tnoia=1.5`	Coefficient of channel-length dependence of total channel thermal noise.
`tnoib=3.5`	Coefficient of channel-length dependence of total channel thermal noise.
`tnoic=0.0`	Thermal noise parameter.
`rnoia=0.577`	Thermal noise coefficient.
`rnoib=0.5164`	Thermal noise coefficient.
`rnoic=0.395`	Thermal noise coefficient.
`gidlclamp=-1e-5 V`	gidl clamp value.

Substrate Network parameters

`xrcrg1=12.0`	Parameter for distributed channel-resistance effect for both intrinsic-input resistance and charge-deficit NQS models.
`xrcrg2=1.0`	Parameter to account for the excess channel diffusion resistance for both intrinsic-input resistance and charge-deficit NQS models.
`rbpb=50.0` Ω	Resistance connected between bNode' and bNode.
`rbpbx0=100.0` Ω	Body resistance RBPBX scaling.
`rbpbxl=0.0`	Body resistance RBPBX L scaling.
`rbpbxw=0.0`	Body resistance RBPBX W scaling.
`rbpbxnf=0.0`	Body resistance RBPBX NF scaling.
`rbpby0=100.0` Ω	Body resistance RBPBY scaling.
`rbpbyl=0.0`	Body resistance RBPBY L scaling.
`rbpbyw=0.0`	Body resistance RBPBY W scaling.
`rbpbynf=0.0`	Body resistance RBPBY NF scaling.
`rbpd=50.0` Ω	Resistance connected between bNode' and dbNode.
`rbpd0=50.0` Ω	Body resistance RBPD scaling.
`rbpdl=0.0`	Body resistance RBPD L scaling.
`rbpdw=0.0`	Body resistance RBPD W scaling.
`rbpdnf=0.0`	Body resistance RBPD NF scaling.
`rbps=50.0` Ω	Resistance connected between bNode' and sbNode.
`rbps0=50.0` Ω	Body resistance RBPS scaling.
`rbpsl=0.0`	Body resistance RBPS L scaling.
`rbpsw=0.0`	Body resistance RBPS W scaling.
`rbpsnf=0.0`	Body resistance RBPS NF scaling.
`rbdb=50.0` Ω	Resistance connected between dbNode and bNode.
`rbsb=50.0` Ω	Resistance connected between sbNode and bNode.
`rbsbx0=100.0` Ω	Body resistance RBSBX scaling.
`rbsby0=100.0` Ω	Body resistance RBSBY scaling.
`rbdbx0=100.0` Ω	Body resistance RBDBX scaling.
`rbdby0=100.0` Ω	Body resistance RBDBY scaling.
`rbsdbxl=0.0`	Body resistance RBSDBX L scaling.
`rbsdbxw=0.0`	Body resistance RBSDBX W scaling.
`rbsdbxnf=0.0`	Body resistance RBSDBX NF scaling.
`rbsdbyl=0.0`	Body resistance RBSDBY L scaling.
`rbsdbyw=0.0`	Body resistance RBSDBY W scaling.
`rbsdbynf=0.0`	Body resistance RBSDBY NF scaling.
`gbmin=1.0e-12 1/`Ω
	Conductance in parallel with each of the five substrate resistances to avoid potential numerical instability due to an unreasonably large substrate resistance.

Default for instance parameters

`w=5e-6 m`	Default channel width.
`l=5e-6 m`	Default channel length.
`as (m`²`)`	Default area of source diffusion.
`ad (m`²`)`	Default area of drain diffusion.
`ps (m)`	Default perimeter of source diffusion.
`pd (m)`	Default perimeter of drain diffusion.
`nrd`	Default number of squares of drain diffusion.
`nrs`	Default number of squares of source diffusion.
`rdc=0.0` Ω	Default drain contact resistance.
`rsc=0.0` Ω	Default source contact resistance.

Auto Model Selector parameters

`wmax=1.0 m`	Maximum channel width for which the model is valid.
`wmin=0.0 m`	Minimum channel width for which the model is valid.
`lmax=1.0 m`	Maximum channel length for which the model is valid.
`lmin=0.0 m`	Minimum channel length for which the model is valid.

Operating region warning control parameters

`alarm=none`	Forbidden operating region. Possible values are `none`, `off`, `triode`, `sat`, `subth`, and `rev`.
`imax=1.0 A`	Maximum allowable junction current.
`jmax=1.0e8 A/m`²	Maximum allowable junction current density.
`bvj=infinity V`	Voltage at which junction breakdown warning is issued.
`vbox=3e9 toxe V`	Oxide breakdown voltage.
`warn=on`	Parameter to turn warnings on and off. Possible values are `off` and `on`.

Safe Operating Areas Parameters

`vds_max=infinity V`
	Maximum allowed voltage across source and drain.
`vgd_max=infinity V`
	Maximum allowed voltage across drain and gate.
`vgs_max=infinity V`
	Maximum allowed voltage across source/bulk and gate.
`vbd_max=infinity V`
	Maximum allowed voltage across drain/source and bulk.
`vbs_max=vbd_max V`	Maximum allowed voltage across source and bulk.
`vgb_max=vgs_max V`
	Maximum allowed voltage across gate and bulk.
`vgdr_max=vgd_max V`
	Maximum allowed reverse voltage across gate and drain.
`vgsr_max=vgs_max V`
	Maximum allowed reverse voltage across gate and source.
`vgbr_max=vgb_max V`
	Maximum allowed reverse voltage across gate and bulk.
`vbsr_max=vbs_max V`
	Maximum allowed reverse voltage across bulk and source.
`vbdr_max=vbd_max V`
	Maximum allowed reverse voltage across bulk and drain.

Length dependent parameters

`lvtho=0.0 V`	Length dependence of vtho.
`lvth0`	Length dependence of vth0.
`lvfb=0.0`	Length dependence of vfb.
`lk1=0.0` `V`	Length dependence of k1.
`lk2=0.0`	Length dependence of k2.
`lk3=0.0`	Length dependence of k3.
`lk3b=0.0 1/V`	Length dependence of k3b.
`lw0=0.0 m`	Length dependence of w0.
`lgamma1=0.0` `V`	Length dependence of gamma1.
`lgamma2=0.0` `V`	Length dependence of gamma2.
`lvbx=0.0 V`	Length dependence of vbx.
`lvbm=0.0 V`	Length dependence of vbm.
`ldvt0=0.0`	Length dependence of dvt0.
`ldvt1=0.0`	Length dependence of dvt1.
`ldvt2=0.0 1/V`	Length dependence of dvt2.
`ldvt0w=0.0`	Length dependence of dvt0w.
`ldvt1w=0.0`	Length dependence of dvt1w.
`ldvt2w=0.0`	Length dependence of dvt2w.
`la0=0.0`	Length dependence of a0.
`lb0=0.0 m`	Length dependence of b0.
`lb1=0.0 m`	Length dependence of b1.
`la1=0.0`	Length dependence of a1.
`la2=0.0`	Length dependence of a2.
`lags=0.0 F/m`² `V`	Length dependence of ags.
`lketa=0.0 1/V`	Length dependence of keta.
`lnsub=0.0 cm`^-3	Length dependence of nsub.
`lngate=0.0 cm`^-3	Length dependence of ngate.
`lxj=0.0 m`	Length dependence of xj.
`ldwg=0.0 m/V`	Length dependence of dwg.
`ldwb=0.0 m/``V`	Length dependence of dwb.
`lxt=0.0 m`	Length dependence of xt.
`lrdsw=0.0` Ω μ`m`	Length dependence of rdsw.
`lprwb=0.0 1/``V`	Length dependence of prwb.
`lprwg=0.0 1/V`	Length dependence of prwg.
`lwr=0.0`	Length dependence of wr.
`lu0=0.0`	Length dependence of u0.
`lvsat=0.0 m/s`	Length dependence of vsat.
`lua=0.0 m/V`	Length dependence of ua.
`lub=0.0 m`²`/V`²	Length dependence of ub.
`luc=0.0 m/V`²	Length dependence of uc.
`lud=0.0 /m`²	Length dependence of ud.
`lup=0.0`	Length dependence of up.
`llp=0.0 m`	Length dependence of lp.
`ldrout=0.0`	Length dependence of drout.
`lpclm=0.0`	Length dependence of pclm.
`lpdiblc1=0.0`	Length dependence of pdiblc1.
`lpdiblc2=0.0`	Length dependence of pdiblc2.
`lpdiblcb=0.0 1/V`	Length dependence of pdiblcd.
`lpscbe1=0.0 V/m`	Length dependence of pscbe1.
`lpscbe2=0.0 m/V`	Length dependence of pscbe2.
`lpvag=0.0`	Length dependence of pvag.
`ldelta=0.0 V`	Length dependence of delta.
`lcdsc=0.0 F/m`²	Length dependence of cdsc.
`lcdscb=0.0 F/m`² `V`	Length dependence of cdscb.
`lcdscd=0.0 F/m`² `V`	Length dependence of cdscd.
`lnfactor=0.0`	Length dependence of nfactor.
`ltnfactor=0.0`	Length dependence of tnfactor.
`lcit=0.0 F`	Length dependence of cit.
`lvoff=0.0 V`	Length dependence of voff.
`ldsub=0.0`	Length dependence of dsub.
`leta0=0.0`	Length dependence of eta0.
`lteta0=0.0`	Length dependence of teta0.
`letab=0.0 1/V`	Length dependence of etab.
`lalpha0=0.0 m/V`	Length dependence of alpha0.
`lalpha1=0.0 m/V`	Length dependence of alpha1.
`lbeta0=0.0 1/V`	Length dependence of beta0.
`lcgsl=0.0 F/m`	Length dependence of cgsl.
`lcgdl=0.0 F/m`	Length dependence of cgdl.
`lclc=0.0 m`	Length dependence of clc.
`lcle=0.0`	Length dependence of cle.
`lcf=0.0 F/m`	Length dependence of cf.
`lvfbcv=0.0`	Length dependence of vfbcv.
`lacde=0.0`	Length dependence of acde.
`lmoin=0.0`	Length dependence of moin.
`lnoff=0.0`	Length dependence of noff.
`lvoffcv=0.0`	Length dependence of voffcv.
`ltvoffcv=0.0`	Length dependence of tvoffcv.
`lminvcv=0.0`	Length dependence of minvcv.
`lkt1=0.0 V`	Length dependence of kt1.
`lkt1l=0 V m`	Length dependence of kt1l.
`lkt2=0.0`	Length dependence of kt2.
`lat=0.0 m/s`	Length dependence of at.
`lua1=0.0 m/V`	Length dependence of ua1.
`lub1=0.0 m`²`/V`²	Length dependence of ub1.
`luc1=0.0 m/V`²	Length dependence of uc1.
`lud1=0.0 /m`²	Length dependence of ud1.
`lprt=0.0` Ω	Length dependence of prt.
`lute=0.0`	Length dependence of ute.
`lndep=0.0`	Length dependence of ndep.
`lnsd=0.0`	Length dependence of nsd.
`lphin=0.0`	Length dependence of phin.
`llpe0=0.0`	Length dependence of lpe0.
`llpeb=0.0`	Length dependence of lpeb.
`ldvtp0=0.0`	Length dependence of dvtp0.
`ldvtp1=0.0`	Length dependence of dvtp1.
`ldvtp2=0.0`	Length dependence of dvtp2.
`ldvtp3=0.0`	Length dependence of dvtp3.
`ldvtp4=0.0`	Length dependence of dvtp4.
`ldvtp5=0.0`	Length dependence of dvtp5.
`leu=0.0`	Length dependence of eu.
`lminv=0.0`	Length dependence of minv.
`lfprout=0.0`	Length dependence of fprout.
`lpdits=0.0`	Length dependence of pdits.
`lpditsd=0.0`	Length dependence of pditsd.
`lrdw=0.0`	Length dependence of rdw.
`lrsw=0.0`	Length dependence of rsw.
`lagidl=0.0`	Length dependence of agidl.
`lbgidl=0.0`	Length dependence of bgidl.
`lcgidl=0.0`	Length dependence of cgidl.
`legidl=0.0`	Length dependence of egidl.
`lfgidl=0.0`	Length dependence of fgidl.
`lkgidl=0.0`	Length dependence of kgidl.
`lrgidl=0.0`	Length dependence of rgidl.
`lfgisl=lfgidl`	Length dependence of fgisl.
`lkgisl=lkgidl`	Length dependence of kgisl.
`lrgisl=lrgidl`	Length dependence of rgisl.
`laigbacc=0.0`	Length dependence of aigbacc.
`lbigbacc=0.0`	Length dependence of bigbacc.
`lcigbacc=0.0`	Length dependence of cigbacc.
`lnigbacc=0.0`	Length dependence of nigbacc.
`laigbinv=0.0`	Length dependence of aigbinv.
`lbigbinv=0.0`	Length dependence of bigbinv.
`lcigbinv=0.0`	Length dependence of cigbinv.
`leigbinv=0.0`	Length dependence of eigbinv.
`lnigbinv=0.0`	Length dependence of nigbinv.
`laigc=0.0`	Length dependence of aigc.
`lbigc=0.0`	Length dependence of bigc.
`lcigc=0.0`	Length dependence of cigc.
`laigsd=0.0`	Length dependence of aigsd.
`lbigsd=0.0`	Length dependence of bigsd.
`lcigsd=0.0`	Length dependence of cigsd.
`lnigc=0.0`	Length dependence of nigc.
`lpoxedge=0.0`	Length dependence of poxedge.
`lpigcd=0.0`	Length dependence of pigcd.
`lntox=0.0`	Length dependence of ntox.
`lckappas=0.0`	Length dependence of ckappas.
`lckappad=0.0`	Length dependence of ckappad.
`lxrcrg1=0.0`	Length dependence of xrcrg1.
`lxrcrg2=0.0`	Length dependence of xrcrg2.
`lvfbsdoff=0.0`	Length dependence of vfbsdoff.
`llambda=0.0`	Length dependence of lambda.
`lvtl=0.0`	Length dependence of vtl.
`lxn=0.0`	Length dependence of xn.
`lkvth0we=0.0 V`	Length dependence of kvth0we.
`lk2we=0.0`	Length dependence of k2we.
`lku0we=0.0`	Length dependence of ku0we.
`lku0=0.0 m^llodku0`	Length dependence of ku0.
`lkvth0=0.0 V m^llodku0`
	Length dependence of kvth0.
`lucs=0.0`	Length dependence of ucs.
`lucste=0.0`	Length dependence of ucste.

Width dependent parameters

`wvtho=0.0 V`	Width dependence of vtho.
`wvth0`	Width dependence of vth0.
`wvfb=0.0`	Width dependence of vfb.
`wk1=0.0` `V`	Width dependence of k1.
`wk2=0.0`	Width dependence of k2.
`wk3=0.0`	Width dependence of k3.
`wk3b=0.0 1/V`	Width dependence of k3b.
`ww0=0.0 m`	Width dependence of w0.
`wgamma1=0.0` `V`	Width dependence of gamma1.
`wgamma2=0.0` `V`	Width dependence of gamma2.
`wvbx=0.0 V`	Width dependence of vbx.
`wvbm=0.0 V`	Width dependence of vbm.
`wdvt0=0.0`	Width dependence of dvt0.
`wdvt1=0.0`	Width dependence of dvt1.
`wdvt2=0.0 1/V`	Width dependence of dvt2.
`wdvt0w=0.0`	Width dependence of dvt0w.
`wdvt1w=0.0`	Width dependence of dvt1w.
`wdvt2w=0.0`	Width dependence of dvt2w.
`wa0=0.0`	Width dependence of a0.
`wb0=0.0 m`	Width dependence of b0.
`wb1=0.0 m`	Width dependence of b1.
`wa1=0.0`	Width dependence of a1.
`wa2=0.0`	Width dependence of a2.
`wags=0.0 F/m`² `V`	Width dependence of ags.
`wketa=0.0 1/V`	Width dependence of keta.
`wnsub=0.0 cm`^-3	Width dependence of nsub.
`wngate=0.0 cm`^-3	Width dependence of ngate.
`wxj=0.0 m`	Width dependence of xj.
`wdwg=0.0 m/V`	Width dependence of dwg.
`wdwb=0.0 m/``V`	Width dependence of dwb.
`wxt=0.0 m`	Width dependence of xt.
`wrdsw=0.0` Ω μ`m`	Width dependence of rdsw.
`wprwb=0.0 1/``V`	Width dependence of prwb.
`wprwg=0.0 1/V`	Width dependence of prwg.
`wwr=0.0`	Width dependence of wr.
`wu0=0.0`	Width dependence of u0.
`wvsat=0.0 m/s`	Width dependence of vsat.
`wua=0.0 m/V`	Width dependence of ua.
`wub=0.0 m`²`/V`²	Width dependence of ub.
`wuc=0.0 m/V`²	Width dependence of uc.
`wud=0.0 /m`²	Width dependence of ud.
`wup=0.0`	Width dependence of up.
`wlp=0.0 m`	Width dependence of lp.
`wdrout=0.0`	Width dependence of drout.
`wpclm=0.0`	Width dependence of pclm.
`wpdiblc1=0.0`	Width dependence of pdiblc1.
`wpdiblc2=0.0`	Width dependence of pdiblc2.
`wpdiblcb=0.0 1/V`	Width dependence of pdiblcb.
`wpscbe1=0.0 V/m`	Width dependence of pscbe1.
`wpscbe2=0.0 m/V`	Width dependence of pscbe2.
`wpvag=0.0`	Width dependence of pvag.
`wdelta=0.0 V`	Width dependence of delta.
`wcdsc=0.0 F/m`²	Width dependence of cdsc.
`wcdscb=0.0 F/m`² `V`	Width dependence of cdscb.
`wcdscd=0.0 F/m`² `V`	Width dependence of cdscd.
`wnfactor=0.0`	Width dependence of nfactor.
`wtnfactor=0.0`	Width dependence of tnfactor.
`wcit=0.0 F`	Width dependence of cit.
`wvoff=0.0 V`	Width dependence of voff.
`wdsub=0.0`	Width dependence of dsub.
`weta0=0.0`	Width dependence of eta0.
`wteta0=0.0`	Width dependence of teta0.
`wetab=0.0 1/V`	Width dependence of etab.
`walpha0=0.0 m/V`	Width dependence of alpha0.
`walpha1=0.0 m/V`	Width dependence of alpha1.
`wbeta0=0.0 1/V`	Width dependence of beta0.
`wcgsl=0.0 F/m`	Width dependence of cgsl.
`wcgdl=0.0 F/m`	Width dependence of cgdl.
`wclc=0.0 m`	Width dependence of clc.
`wcle=0.0`	Width dependence of cle.
`wcf=0.0 F/m`	Width dependence of cf.
`wvfbcv=0.0`	Width dependence of vfbcv.
`wacde=0.0`	Width dependence of acde.
`wmoin=0.0`	Width dependence of moin.
`wnoff=0.0`	Width dependence of noff.
`wvoffcv=0.0`	Width dependence of voffcv.
`wtvoffcv=0.0`	Width dependence of tvoffcv.
`wminvcv=0.0`	Width dependence of minvcv.
`wkt1=0.0 V`	Width dependence of kt1.
`wkt1l=0 V m`	Width dependence of kt1l.
`wkt2=0.0`	Width dependence of kt2.
`wat=0.0 m/s`	Width dependence of at.
`wua1=0.0 m/V`	Width dependence of ua1.
`wub1=0.0 m`²`/V`²	Width dependence of ub1.
`wuc1=0.0 m/V`²	Width dependence of uc1.
`wud1=0.0 /m`²	Width dependence of ud1.
`wprt=0.0` Ω	Width dependence of prt.
`wute=0.0`	Width dependence of ute.
`wndep=0.0`	Width dependence of ndep.
`wnsd=0.0`	Width dependence of nsd.
`wphin=0.0`	Width dependence of phin.
`wlpe0=0.0`	Width dependence of lpe0.
`wlpeb=0.0`	Width dependence of lpeb.
`wdvtp0=0.0`	Width dependence of dvtp0.
`wdvtp1=0.0`	Width dependence of dvtp1.
`wdvtp2=0.0`	Width dependence of dvtp2.
`wdvtp3=0.0`	Width dependence of dvtp3.
`wdvtp4=0.0`	Width dependence of dvtp4.
`wdvtp5=0.0`	Width dependence of dvtp5.
`weu=0.0`	Width dependence of eu.
`wminv=0.0`	Width dependence of minv.
`wfprout=0.0`	Width dependence of fprout.
`wpdits=0.0`	Width dependence of pdits.
`wpditsd=0.0`	Width dependence of pditsd.
`wrdw=0.0`	Width dependence of rdw.
`wrsw=0.0`	Width dependence of rsw.
`wagidl=0.0`	Width dependence of agidl.
`wbgidl=0.0`	Width dependence of bgidl.
`wcgidl=0.0`	Width dependence of cgidl.
`wegidl=0.0`	Width dependence of egidl.
`wfgidl=0.0`	Width dependence of fgidl.
`wkgidl=0.0`	Width dependence of kgidl.
`wrgidl=0.0`	Width dependence of rgidl.
`wfgisl=wfgidl`	Width dependence of fgisl.
`wkgisl=wkgidl`	Width dependence of kgisl.
`wrgisl=wrgidl`	Width dependence of rgisl.
`waigbacc=0.0`	Width dependence of aigbacc.
`wbigbacc=0.0`	Width dependence of bigbacc.
`wcigbacc=0.0`	Width dependence of cigbacc.
`wnigbacc=0.0`	Width dependence of nigbacc.
`waigbinv=0.0`	Width dependence of aigbinv.
`wbigbinv=0.0`	Width dependence of bigbinv.
`wcigbinv=0.0`	Width dependence of cigbinv.
`weigbinv=0.0`	Width dependence of eigbinv.
`wnigbinv=0.0`	Width dependence of nigbinv.
`waigc=0.0`	Width dependence of aigc.
`wbigc=0.0`	Width dependence of bigc.
`wcigc=0.0`	Width dependence of cigc.
`waigsd=0.0`	Width dependence of aigsd.
`wbigsd=0.0`	Width dependence of bigsd.
`wcigsd=0.0`	Width dependence of cigsd.
`wnigc=0.0`	Width dependence of nigc.
`wpoxedge=0.0`	Width dependence of poxedge.
`wpigcd=0.0`	Width dependence of pigcd.
`wntox=0.0`	Width dependence of ntox.
`wckappas=0.0`	Width dependence of ckappas.
`wckappad=0.0`	Width dependence of ckappad.
`wxrcrg1=0.0`	Width dependence of xrcrg1.
`wxrcrg2=0.0`	Width dependence of xrcrg2.
`wvfbsdoff=0.0`	Width dependence of vfbsdoff.
`wlambda=0.0`	Width dependence of lambda.
`wvtl=0.0`	Width dependence of vtl.
`wxn=0.0`	Width dependence of xn.
`wkvth0we=0.0 V`	Width dependence of kvth0we.
`wk2we=0.0`	Width dependence of k2we.
`wku0we=0.0`	Width dependence of ku0we.
`wku0=0.0 m^wlodku0`	Width dependence of ku0.
`wkvth0=0.0 V m^wlodku0`
	Width dependence of kvth0.
`wucs=0.0`	Width dependence of ucs.
`wucste=0.0`	Width dependence of ucste.

Cross-term dependent parameters

`pvtho=0.0 V`	Cross-term dependence of vtho.
`pvth0`	Cross-term dependence of vth0.
`pvfb=0.0`	Cross-term dependence of vfb.
`pk1=0.0` `V`	Cross-term dependence of k1.
`pk2=0.0`	Cross-term dependence of k2.
`pk3=0.0`	Cross-term dependence of k3.
`pk3b=0.0 1/V`	Cross-term dependence of k3b.
`pw0=0.0 m`	Cross-term dependence of w0.
`pgamma1=0.0` `V`	Cross-term dependence of gamma1.
`pgamma2=0.0` `V`	Cross-term dependence of gamma2.
`pvbx=0.0 V`	Cross-term dependence of vbx.
`pvbm=0.0 V`	Cross-term dependence of vbm.
`pdvt0=0.0`	Cross-term dependence of dvt0.
`pdvt1=0.0`	Cross-term dependence of dvt1.
`pdvt2=0.0 1/V`	Cross-term dependence of dvt2.
`pdvt0w=0.0`	Cross-term dependence of dvt0w.
`pdvt1w=0.0`	Cross-term dependence of dvt1w.
`pdvt2w=0.0`	Cross-term dependence of dvt2w.
`pa0=0.0`	Cross-term dependence of a0.
`pb0=0.0 m`	Cross-term dependence of b0.
`pb1=0.0 m`	Cross-term dependence of b1.
`pa1=0.0`	Cross-term dependence of a1.
`pa2=0.0`	Cross-term dependence of a2.
`pags=0.0 F/m`² `V`	Cross-term dependence of ags.
`pketa=0.0 1/V`	Cross-term dependence of keta.
`pnsub=0.0 cm`^-3	Cross-term dependence of nsub.
`pngate=0.0 cm`^-3	Cross-term dependence of ngate.
`pxj=0.0 m`	Cross-term dependence of xj.
`pdwg=0.0 m/V`	Cross-term dependence of dwg.
`pdwb=0.0 m/``V`	Cross-term dependence of dwb.
`pxt=0.0 m`	Cross-term dependence of xt.
`prdsw=0.0` Ω μ`m`	Cross-term dependence of rdsw.
`pprwb=0.0 1/``V`	Cross-term dependence of prwb.
`pprwg=0.0 1/V`	Cross-term dependence of prwg.
`pwr=0.0`	Cross-term dependence of wr.
`pu0=0.0`	Cross-term dependence of u0.
`pvsat=0.0 m/s`	Cross-term dependence of vsat.
`pua=0.0 m/V`	Cross-term dependence of ua.
`pub=0.0 m`²`/V`²	Cross-term dependence of ub.
`puc=0.0 m/V`²	Cross-term dependence of uc.
`pud=0.0 /m`²	Cross-term dependence of ud.
`pup=0.0`	Cross-term dependence of up.
`plp=0.0 m`	Cross-term dependence of lp.
`pdrout=0.0`	Cross-term dependence of drout.
`ppclm=0.0`	Cross-term dependence of pclm.
`ppdiblc1=0.0`	Cross-term dependence of pdiblc1.
`ppdiblc2=0.0`	Cross-term dependence of pdiblc2.
`ppdiblcb=0.0 1/V`	Cross-term dependence of pdiblcd.
`ppscbe1=0.0 V/m`	Cross-term dependence of pscbe1.
`ppscbe2=0.0 m/V`	Cross-term dependence of pscbe2.
`ppvag=0.0`	Cross-term dependence of pvag.
`pdelta=0.0 V`	Cross-term dependence of delta.
`pcdsc=0.0 F/m`²	Cross-term dependence of cdsc.
`pcdscb=0.0 F/m`² `V`	Cross-term dependence of cdscb.
`pcdscd=0.0 F/m`² `V`	Cross-term dependence of cdscd.
`pnfactor=0.0`	Cross-term dependence of nfactor.
`ptnfactor=0.0`	Cross-term dependence of tnfactor.
`pcit=0.0 F`	Cross-term dependence of cit.
`pvoff=0.0 V`	Cross-term dependence of voff.
`pdsub=0.0`	Cross-term dependence of dsub.
`peta0=0.0`	Cross-term dependence of eta0.
`pteta0=0.0`	Cross-term dependence of teta0.
`petab=0.0 1/V`	Cross-term dependence of etab.
`palpha0=0.0 m/V`	Cross-term dependence of alpha0.
`palpha1=0.0 m/V`	Cross-term dependence of alpha1.
`pbeta0=0.0 1/V`	Cross-term dependence of beta0.
`pcgsl=0.0 F/m`	Cross-term dependence of cgsl.
`pcgdl=0.0 F/m`	Cross-term dependence of cgdl.
`pclc=0.0 m`	Cross-term dependence of clc.
`pcle=0.0`	Cross-term dependence of cle.
`pcf=0.0 F/m`	Cross-term dependence of cf.
`pvfbcv=0.0`	Cross-term dependence of vfbcv.
`pacde=0.0`	Cross-term dependence of acde.
`pmoin=0.0`	Cross-term dependence of moin.
`pnoff=0.0`	Cross-term dependence of noff.
`pvoffcv=0.0`	Cross-term dependence of voffcv.
`ptvoffcv=0.0`	Cross-term dependence of tvoffcv.
`pminvcv=0.0`	Cross-term dependence of minvcv.
`pkt1=0.0 V`	Cross-term dependence of kt1.
`pkt1l=0 V m`	Cross-term dependence of kt1l.
`pkt2=0.0`	Cross-term dependence of kt2.
`pat=0.0 m/s`	Cross-term dependence of at.
`pua1=0.0 m/V`	Cross-term dependence of ua1.
`pub1=0.0 m`²`/V`²	Cross-term dependence of ub1.
`puc1=0.0 m/V`²	Cross-term dependence of uc1.
`pud1=0.0 /m`²	Cross-term dependence of ud1.
`pprt=0.0` Ω	Cross-term dependence of prt.
`pute=0.0`	Cross-term dependence of ute.
`pndep=0.0`	Cross-term dependence of ndep.
`pnsd=0.0`	Cross-term dependence of nsd.
`pphin=0.0`	Cross-term dependence of phin.
`plpe0=0.0`	Cross-term dependence of lpe0.
`plpeb=0.0`	Cross-term dependence of lpeb.
`pdvtp0=0.0`	Cross-term dependence of dvtp0.
`pdvtp1=0.0`	Cross-term dependence of dvtp1.
`pdvtp2=0.0`	Cross-term dependence of dvtp2.
`pdvtp3=0.0`	Cross-term dependence of dvtp3.
`pdvtp4=0.0`	Cross-term dependence of dvtp4.
`pdvtp5=0.0`	Cross-term dependence of dvtp5.
`peu=0.0`	Cross-term dependence of eu.
`pminv=0.0`	Cross-term dependence of minv.
`pfprout=0.0`	Cross-term dependence of fprout.
`ppdits=0.0`	Cross-term dependence of pdits.
`ppditsd=0.0`	Cross-term dependence of pditsd.
`prdw=0.0`	Cross-term dependence of rdw.
`prsw=0.0`	Cross-term dependence of rsw.
`pagidl=0.0`	Cross-term dependence of agidl.
`pbgidl=0.0`	Cross-term dependence of bgidl.
`pcgidl=0.0`	Cross-term dependence of cgidl.
`pegidl=0.0`	Cross-term dependence of egidl.
`pfgidl=0.0`	Cross-term dependence of fgidl.
`pkgidl=0.0`	Cross-term dependence of kgidl.
`prgidl=0.0`	Cross-term dependence of rgidl.
`pfgisl=pfgidl`	Cross-term dependence of fgisl.
`pkgisl=pkgidl`	Cross-term dependence of kgisl.
`prgisl=prgidl`	Cross-term dependence of rgisl.
`paigbacc=0.0`	Cross-term dependence of aigbacc.
`pbigbacc=0.0`	Cross-term dependence of bigbacc.
`pcigbacc=0.0`	Cross-term dependence of cigbacc.
`pnigbacc=0.0`	Cross-term dependence of nigbacc.
`paigbinv=0.0`	Cross-term dependence of aigbinv.
`pbigbinv=0.0`	Cross-term dependence of bigbinv.
`pcigbinv=0.0`	Cross-term dependence of cigbinv.
`peigbinv=0.0`	Cross-term dependence of eigbinv.
`pnigbinv=0.0`	Cross-term dependence of nigbinv.
`paigc=0.0`	Cross-term dependence of aigc.
`pbigc=0.0`	Cross-term dependence of bigc.
`pcigc=0.0`	Cross-term dependence of cigc.
`paigsd=0.0`	Cross-term dependence of aigsd.
`pbigsd=0.0`	Cross-term dependence of bigsd.
`pcigsd=0.0`	Cross-term dependence of cigsd.
`pnigc=0.0`	Cross-term dependence of nigc.
`ppoxedge=0.0`	Cross-term dependence of poxedge.
`ppigcd=0.0`	Cross-term dependence of pigcd.
`pntox=0.0`	Cross-term dependence of ntox.
`pckappas=0.0`	Cross-term dependence of ckappas.
`pckappad=0.0`	Cross-term dependence of ckappad.
`pxrcrg1=0.0`	Cross-term dependence of xrcrg1.
`pxrcrg2=0.0`	Cross-term dependence of xrcrg2.
`pvfbsdoff=0.0`	Cross-term dependence of Vfbsdoff.
`plambda=0.0`	Cross-term dependence of lambda.
`pvtl=0.0`	Cross-term dependence of vtl.
`pxn=0.0`	Cross-term dependence of xn.
`pkvth0we=0.0 V`	Cross-term dependence of kvth0we.
`pk2we=0.0`	Cross-term dependence of k2we.
`pku0we=0.0`	Cross-term dependence of ku0we.
`pku0=0.0 m^(llodku0+wlodku0)`
	Cross-term dependence of ku0.
`pkvth0=0.0 V m^(llodku0+wlodku0)`
	Cross-term dependence of kvth0.
`pucs=0.0`	Cross-term dependence of ucs.
`pucste=0.0`	Cross-term dependence of ucste.

DC-mismatch dependent parameters

`mvtwl=0.0 V m`	Threshold mismatch area dependence.
`mvtwl2=0.0 V m^1.5`
	Threshold mismatch area square dependence.
`mvt0=0.0 V`	Threshold mismatch intercept.
`mbewl=0.0 m`	Beta mismatch area dependence.
`mbe0=0.0`	Beta mismatch intercept.
`mismatchmod=0`	Select mismatch mode.
`mismatchdist=0 m`	Mismatch distance.

Compatibility model parameters

`compatible=spectre`
	Make device equations to be compatible with a foreign simulator. This option does not affect the input syntax. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `spiceplus`, `eldo`, `sspice`, `mica`, `tispice`, and `pspice`.

Shrink Parameters

`shrink=0`	Linear shrink parameter.
`shrink2=0`	Area shrink parameter.
`maxvdd=0.0 V`	max Vdd for the model.

Imax and Imelt

The imax parameter aids convergence and prevents numerical overflow. The junction characteristics of the device are accurately modeled for current up to imax. If imax is exceeded during iterations, the linear model is substituted until the current drops below imax or until convergence is achieved. If convergence is achieved with the current exceeding imax, the results are inaccurate, and a warning is printed out.

A separate model parameter, imelt, is used as a limit warning for the junction current. This parameter can be set to the maximum current rating of the device. When any component of the junction current exceeds imelt, the base and collector currents are composed of many exponential terms, a warning will be issued and the results become inaccurate. The junction current is linearized above the value of imelt to prevent arithmetic exception, with the exponential term replaced by a linear equation at imelt.

Both of these parameters have current density counterparts, jmax and jmelt, that you can specify if you want the absolute current values to depend on the device area.

In BSIM4, imax (jmax) will take effect only when diomod=3 (Spectre common diode model). Berkeley uses other model parameters, such as ijthsfwd, ijthdfwd to do limitation. For more information, see the Berkeley BSIM4 manual.

Auto Model Selection

Many models need to be characterized for different geometries in order to obtain accurate results for model development. The model selector program automatically searches for a model with the length and width range specified in the instance statement and uses this model in the simulations.

For the auto model selector program to find a specific model, the models to be searched should be grouped together within braces. Such a group is called a model group. An opening brace is required at the end of the line defining each model group. Every model in the group is given a name followed by a colon and the list of parameters. Also, the four geometric parameters lmax, lmin, wmax, and wmin should be given. The selection criteria to choose a model is as follows:

lmin <= inst_length < lmax  and   wmin <= inst_width  < wmax

Example:

model ModelName ModelType {

   1:     <model parameters> lmin=2 lmax=4 wmin=1 wmax=2

   2:     <model parameters> lmin=1 lmax=2 wmin=2 wmax=4

   3:     <model parameters> lmin=2 lmax=4 wmin=4 wmax=6

Then for a given instance

M1 1 2 3 4 ModelName w=3 l=1.5

the program would search all the models in the model group with the name ModelName and then pick the first model whose geometric range satisfies the selection criteria. In the preceding example, the auto model selector program would choose ModelName.2.

You must specify both length (l) and width (w) on the device instance line to enable automatic model selection.

Inst Default to Model

In BSIM4, for customer convenience, some model parameters are added to serve as default values for the corresponding instance parameters (they are not Berkeley model parameters. These include: l, w, as, ad, ps, pd, nrs, nrd, rdc, rsc, rgeomod, nf, min, and trise.

Output Parameters

`tempeff (C)`	Effective temperature for a single device.
`meff`	Effective multiplicity factor (m-factor).
`weff (m)`	Effective channel width (alias=lx62).
`leff (m)`	Effective channel length (alias=lx63).
`weffcv (m)`	Effective channel width for CV (alias=lx64).
`leffcv (m)`	Effective channel length for CV (alias=lx65).
`vfbsd (V)`	Flat band Voltage between the gate and Drain/source diffusions (alias=lx75).
`rgbi (`Ω`)`	Gate bias-independent resistance.
`adeff (m`²`)`	Effective drain area.
`aseff (m`²`)`	Effective source area.
`pdeff (m)`	Effective drain perimeter.
`pseff (m)`	Effective source perimeter.

Operating-Point Parameters

`region=triode`	Estimated operating region. %Z outputs the number (0-4) in a rawfile. Possible values are `off`, `triode`, `sat`, `subth`, and `breakdown`.
`trise (C)`	Temperature rise from ambient.
`dtemp (C)`	Alias for `trise`.
`reversed`	Reverse mode indicator. Possible values are `yes` and `no`.
`ids (A)`	Resistive drain-to-source current. Refer to equations 22-16 and 22-43.
`vgs (V)`	Gate-source voltage.
`vds (V)`	Drain-source voltage.
`vbs (V)`	Bulk-source voltage.
`vgd (V)`	Gate-drain voltage.
`vdb (V)`	Drain-bulk voltage.
`vgb (V)`	Gate-bulk voltage.
`vth (V)`	Threshold voltage (alias=lv9). Refer to equation 22-14.
`vdsat (V)`	Drain-source saturation voltage (alias=lv10). Refer to equations 22-37 and 22-38.
`gm (S)`	Common-source transconductance (alias=lx7). Refer to equation 13-32.
`gds (S)`	Common-source output conductance (alias=lx8). Refer to equation 13-31.
`gmbs (S)`	Body-transconductance (alias=lx9). Refer to equation 13-33.
`betaeff (A/V`²`)`	Effective beta (alias LV21).
`pro_Gamma`	Gamma.
`cjd (F)`	Drain-bulk junction capacitance (alias=lx29). Refer to equations 22-171 and 22-172.
`cjs (F)`	Source-bulk junction capacitance (alias=lx28). Refer to equations 22-164 and 22-165.
`cgg (F)`	Total gate capacitance, including intrinsic, overlap and fringing components (alias=lx82). Refer to equations 22-120, 22-126, 22-127, and 22-128.
`cgd (F)`	Total gate-to-drain capacitance, including intrinsic, overlap, and fringing components (alias=lx83). Refer to equations 22-122, 22-126, 22-127, and 22-128.
`cgs (F)`	Total gate-to-source capacitance, including intrinsic, overlap, and fringing components (alias=lx84). Refer to equations 22-121, 22-126, 22-127, and 22-128.
`cgb (F)`	Total gate-to-bulk capacitance, including intrinsic and overlap components. Refer to equations 22-123, 22-126, 22-127, and 22-128.
`cdg (F)`	Total drain-to-gate capacitance, including intrinsic, overlap, and fringing components (alias=lx87). Refer to equations 22-120, 22-126, 22-127, and 22-128.
`cdd (F)`	Drain capacitance, including intrinsic, overlap, and fringing components. Refer to equations 22-122, 22-126, 22-127, and 22-128.
`cds (F)`	Total drain-to-source capacitance (alias=lx86). Refer to equations 22-121, 22-126, 22-127, and 22-128.
`cdb (F)`	Intrinsic drain-to-bulk capacitance. Refer to equation 22-123.
`csg (F)`	Total source-to-gate capacitance, including intrinsic, overlap, and fringing components. Refer to equations 22-120, 22-126, 22-127, and 22-128.
`csd (F)`	Total source-to-drain capacitance. Refer to equations 22-122, 22-126, 22-127, and 22-128.
`css (F)`	Source capacitance, including intrinsic, overlap, and fringing components. Refer to equations 22-121, 22-126, 22-127, and 22-128.
`csb (F)`	Intrinsic source-to-bulk capacitance. Refer to equation 22-123.
`cbg (F)`	Total bulk-to-gate capacitance, including intrinsic and overlap components (alias=lx88). Refer to equations 22-120, 22-126, 22-127, and 22-128.
`cbd (F)`	Intrinsic bulk-to-drain capacitance. Refer to equation 22-122.
`cbs (F)`	Intrinsic bulk-to-source capacitance. Refer to equation 22-121.
`cbb (F)`	Bulk capacitance, including intrinsic and overlap components. Refer to equations 22-123, 22-126, 22-127, and 22-128.
`covlgs (F/m)`	Gate-source overlap and fringing capacitances (alias=lv36). Refer to equations 22-124 and 22-127
`covlgd (F/m)`	Gate-drain overlap and fringing capacitances (alias=lv37). Refer to equations 22-125 and 22-128.
`covlgb (F/m)`	Gate-bulk overlap capacitances (alias=lv38). Refer to equation 22-126.
`cggbo (F)`	CGGBO = dQg/dVg intrinsic gate capacitance (alias=lx18). Refer to equation 22-120.
`cgdbo (F)`	CGDBO = -dQg/dVd intrinsic gate-to-drain capacitance (alias=lx19).Refer to equation 22-122.
`cgsbo (F)`	CGSBO = -dQg/dVs intrinsic gate-to-source capacitance (alias=lx20). Refer to equation 22-122.
`cbgbo (F)`	CBGBO = -dQb/dVg intrinsic bulk-to-gate capacitance (alias=lx21). Refer to equation 22-120.
`cbdbo (F)`	CBDBO = -dQb/dVd intrinsic bulk-to-drain capacitance (alias=lx22). Refer to equation 22-122.
`cbsbo (F)`	CBSBO = -dQb/dVs intrinsic bulk-to-source capacitance (alias=lx23). Refer to equation 22-121.
`cdgbo (F)`	CDGBO = -dQd/dVg intrinsic drain-to-gate capacitance (alias=lx32). Refer to equation 22-120.
`cddbo (F)`	CDDBO = dQd/dVd intrinsic drain capacitance (alias=lx33). Refer to equation 22-122.
`cdsbo (F)`	CDSBO = -dQd/dVs intrinsic drain-to-source capacitance (alias=lx34). Refer to equation 22-121.
`ron (`Ω`)`	On-resistance. Includes the parasitical rs and rd.
`id (A)`	Resistive drain current. The sum of the currents though D and DI node.
`ig (A)`	Total DC gate current.
`is (A)`	Total DC source current.
`ib (A)`	Total DC bulk current.
`ibulk (A)`	Resistive bulk current. The sum of the currents though B, BI, SB, and DB node.
`pwr (W)`	Power at op point. pwr = abs(ids * vds) + abs(ibulk * vbs).
`gmoverid (1/V)`	Gm/Ids.
`ueff`	ueff.
`rdeff (`Ω`)`	Effective drain resistance. Refer to equation 22-36.
`rseff (`Ω`)`	Effective source resistance. rseff = Rs,bias-dep + nrs * rsh + rsc/ nf. Rs, bias-dep. Refer to equation 22-36.
`rgbd (`Ω`)`	Gate bias-dependent resistance. Refer to equation 22-137.
`igidl (A)`	Gate-induced drain leakage current (alias=lx70). Refer to equation 22-55.
`igisl (A)`	Gate-induced source leakage current. Refer to equation 22-56.
`igdt (A)`	Gate Dielectric tunneling current (alias=lx71). Refer to equations 22-18, 22-19, 22-20, 22-22, and 22-23.
`igd (A)`	Gate-to-drain tunneling current (alias=lx39). Refer to equation 22-20.
`igs (A)`	Gate-to-source tunneling current (alias=lx38). Refer to equation 22-19.
`igb (A)`	Gate-to-bulk tunneling current (alias=lx66). Refer to equation 22-18.
`igbacc (A)`	Gate-to-bulk tunneling current determined by ECB (alias=lx73). Refer to equation 22-18.
`igbinv (A)`	Gate-to-bulk tunneling current determined by EVB (alias=lx74). Refer to equation 22-18.
`igcs (A)`	Gate-to-channel (source side) tunneling current (alias=lx67). Refer to equation 22-22.
`igcd (A)`	Gate-to-channel (drain side) tunneling current (alias=lx68). Refer to equation 22-23.
`isub (A)`	Substrate current ( alias to LX69 ).
`gbs (S)`	Bulk-source diode conductance (alias=lx11).
`gbd (S)`	Bulk-drain diode conductance (alias=lx10).
`qg (Coul)`	Total gate charge, including intrinsic, overlap and fringing components.
`qd (Coul)`	Total drain charge, including intrinsic, overlap and fringing components.
`qs (Coul)`	Total source charge, including intrinsic, overlap and fringing components.
`qb (Coul)`	Total bulk charge, including intrinsic and overlap components.
`qjd (Coul)`	Drain-bulk junction charge.
`qjs (Coul)`	Source-bulk junction charge.
`qgdovl (Coul)`	Gate-drain overlap and fringing charge.
`qgsovl (Coul)`	Gate-source overlap and fringing charge.
`qgi (Coul)`	Intrinsic gate charge.
`qdi (Coul)`	Intrinsic drain charge.
`qsi (Coul)`	Intrinsic source charge.
`qbi (Coul)`	Intrinsic bulk charge.
`ide (A)`	Total DC drain current.
`ige (A)`	Total DC gate current.
`ise (A)`	Total DC source current.
`ibe (A)`	Total DC bulk current.
`idb (A)`	DC drain-bulk current.
`isb (A)`	DC source-bulk current.
`vsb (V)`	Source-bulk DC voltage.
`gmb (S)`	DC bulk transconductance.
`vgt (V)`	Wffective gate drive voltage including back bias and drain bias effects.
`vth_drive (V)`	Effective gate drive voltage including back bias and drain bias effects. Alias for Vgt
`vdss (V)`	Drain saturation voltage at actual bias.
`vsat_marg (V)`	Vds margin.
`vdsat_marg (V)`	Vds margin.
`self_gain`	Transistor self gain.
`rout (`Ω`)`	AC output resistor. The parasitical rs and rd are excluded.
`beff (A/V`²`)`	Gain factor in saturation.
`fug (Hz)`	Unity current gain frequency at actual bias.
`ft (Hz)`	Unity current gain frequency at actual bias.
`rgate (`Ω`)`	MOS gate resistance.
`vearly (V)`	Equivalent early voltage.

Spectre Circuit Simulator Components and Device Models ReferenceProduct Version 23.1, June 2023