Model Version Updates

Version 1.2.0

• Parameter EPSROXO has been added for relative dielectric permittivity
• Gate current computations has been revised to avoid numerical problems and to use GC3HVO for HVB current
• Parameter RACNOISE has been added to select noise equations for Rac.
• Noise names have been made more descriptive.
• Shot noise for gate currents has been added.

Version 1.3.0

• Range of parameters TOXO and NSUB0 extended.
• V(b_cf) has been replaced with V(b_ov) for Igov calculation.
• V(b_cf) has been replaced with V(b_ci) for Igc calculation.

Related Topics

PSP-Based MOS Varactor Model (mosvar)

Model Equations

Model Usage

Component Statements

Return to top