|
version=1.1
|
The available versions are 1.1, 1.2, and 1.3.
|
|
subversion=0.0
|
Model subversion.
|
|
revision=0.0
|
Model revision.
|
|
level=1000
|
Model level.
|
|
tmin=(-100.0) degC
|
Minimum reference/ambient temperature.
|
|
tmax=500.0 degC
|
Maximum reference/ambient temperature.
|
|
vmax=10000.0 V
|
Maximum voltage applied between nodes g and b.
|
|
tr=21.0 degC
|
Nominal (reference) temperature.
|
|
lmin=1.0e-08 m
|
Minimum allowed drawn length.
|
|
lmax=9.9e+09 m
|
Maximum allowed drawn length.
|
|
wmin=1.0e-08 m
|
Minimum allowed drawn width.
|
|
wmax=9.9e+09 m
|
Maximum allowed drawn width.
|
|
swres=1
|
Switch to control series resistance: 0=exclude and 1=include.
|
|
type=(-1)
|
Substrate doping TYPE: -1=n-TYPE and +1=p-TYPE.
|
|
typep=(-1)
|
Polysilicon doping TYPE: -1=n-TYPE and +1=p-TYPE.
|
|
toxo=20.0e-10 m
|
Oxide thickness.
|
|
epsroxo=3.9
|
Relative permittivity.
|
|
tau=0.1 s
|
Time constant for inversion charge recombination/generation.
|
|
vfbo=0.0 V
|
Flatband voltage (for p-TYPE substrate).
|
|
nsubo=3.0e+23 /m3
|
Substrate doping level.
|
|
mnsubo=1.0
|
Maximum change in absolute doping, limited to 1 order of mag up.
|
|
dnsubo=0.0
|
Doping profile slope parameter.
|
|
vnsubo=0.0
|
Doping profile corner voltage parameter.
|
|
nslpo=0.1
|
Doping profile smoothing parameter.
|
|
npo=1.0e+27 /m3
|
Polysilicon doping level.
|
|
qmc=1.0
|
Quantum mechanical correction factor.
|
|
dlq=0.0 m
|
Length delta for capacitor size.
|
|
dwq=0.0 m
|
Width delta for capacitor size.
|
|
dwr=0.0 m
|
Width delta for substrate resistance calculation.
|
|
cfrl=0.0 F/m
|
Fringing capacitance in length direction.
|
|
cfrw=0.0 F/m
|
Fringing capacitance in width direction.
|
|
rshg=1.0 Ω/sq
|
Gate sheet resistance.
|
|
rpv=0.0 Ω m2
|
Vertical resistance down through gate in units of ohm*m^2.
|
|
rend=1.0e-04 Ω m
|
End resistance (extrinsic well res. plus vertical contact res. to well) per width.
|
|
rshs=1000.0 Ω/sq
|
Substrate sheet resistance.
|
|
uac=5.0e-02 m2/V/s
|
Accumulation layer zero bias mobility.
|
|
uacred=0.0 /V
|
Accumulation layer mobility degradation factor.
|
|
stvfb=0.0 V/K
|
Temperature dependence of VFB.
|
|
strshg=0.0
|
Temperature dependence of RSHG.
|
|
strpv=0.0
|
Temperature dependence of RPV.
|
|
strend=0.0
|
Temperature dependence of REND.
|
|
strshs=0.0
|
Temperature dependence of RSHS.
|
|
stuac=0.0
|
Temperature dependence of UAC.
|
|
feta=1.0
|
Effective field parameter.
|
|
swigate=0
|
Flag for gate current: 0=turn off and 1=turn on.
|
|
chibo=3.1 V
|
Tunneling barrier height for electrons.
|
|
chibpo=4.5 V
|
Tunneling barrier height for holes.
|
|
stig=2.0
|
Common temperature coefficient for gate currents (ECB, HVB and HVB).
|
|
lov=0.0 m
|
Overlap length.
|
|
novo=5.0e+25 /m3
|
Effective doping level of overlap regions.
|
|
iginvlw=0.0 A
|
ECB gate channel current pre-factor for 1 um^2 channel area.
|
|
igovw=0.0 A
|
ECB gate overlap current pre-factor for 1 um wide gate overlap region.
|
|
gcoo=0.0
|
ECB gate tunneling energy adjustment.
|
|
gc2o=0.375
|
ECB gate current slope factor.
|
|
gc3o=0.063
|
ECB gate current curvature factor.
|
|
igchvlw=0.0 A
|
HVB gate channel current pre-factor for 1 um^2 channel area.
|
|
igovhvw=0.0 A
|
HVB gate overlap current pre-factor for 1 um wide gate overlap region.
|
|
gcohvo=0.0
|
HVB gate tunneling energy adjustment.
|
|
gc2hvo=0.375
|
HVB gate current slope factor.
|
|
gc3hvo=0.063
|
HVB gate current curvature factor.
|
|
minr=0.001
|
Minimum resistor between bi and b.
|
|
igmax=1.0e-05 A
|
Maximum gate tunneling current.
|
|
compatible=spectre
|
Compatible parameters. Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice, and mica.
|
|
racnoise=1
|
Rac noise selector.
|
|
noscale=0
|
Enables or disables scale support.
|
|
dta=0.0 C
|
Temperature rise from ambient. It served as the default value of instance DTA.
|
|
trise=0.0 C
|
Alias of DTA.
|
