m=1

Multiplicity factor.

w=50 μm

Gate width.

ng=6

Number of gate fingers.

trise=0 C

Temperature rise from ambient.

isnoisy=yes

Should the device generate noise. Possible values are no or yes.

tnom=25 C

Parameters measurement temperature. Default set by options.

vto=-2.0 V

Threshold voltage.

alpha=3.0 1/V

Knee-voltage parameter.

beta=0.05 A/V^q

Transconductance parameter.

lambda=0.0 1/V

Slope of drain characteristic.

gamma=0.1

Threshold shifting parameter.

q=2.0

Power-law parameter.

k=3.0

Knee-function factor.

vst=0.05 V

Subthreshold slope.

mst=0.0 1/V

Subthreshold slope drain parameter.

ilk=1.0e-7 A/μm

Gate leakage diode saturation current (/w).

plk=2.25 V

Gate leakage diode potential.

kgamma=0.33

Internal vcvs parameter.

taugd=1.0e-9 s

Time constant for Ctau.

ctau=1.0e-15 F

Darin-to-source dispersion capacitance.

qgql=5.0e-16 Coul/μm

Charge parameter.

qgqh=-2.0e-16 Coul/μm

Charge parameter.

qgi0=1.0e-16 A/μm

Charge parameter.

qgag=1.0 1/V

Charge parameter.

qgad=1.0 1/V

Charge parameter.

qggb=100.0 μm/W

Charge parameter.

qgcl=2.0e-16 F/μm

Charge parameter.

qgsh=1.0e-16 F/μm

Charge parameter.

qgdh=0.0 F/μm

Charge parameter.

qgg0=0.0 F/μm

Charge parameter.

capmod=1

Capacitance model selector.

cds=0.0 F

Drain-to-source capacitance.

tau=1.0e-12 s

Conduction current delay time.

rd=0.0 Ω μm

Drain resistance (*w).

rg=0.0 Ω μm

Gate resistance (*w).

rgmet=0.0 Ω/μm

Metal resistance in gate (/w).

rs=0.0 Ω μm

Source resistance (*w).

is=1.0e-12 A/μm

Gate diode saturation current (/w).

eta=1.0

Parameter for is.

alphatce=7.7337e-3 1/C

Temperature parameter for alpha.

gammatc=0.0 1/C

Temperature parameter for gamma.

msttc=0.0 1/(V C)

Temperature parameter for mst.

vsttc=0.0 V/C

Temperature parameter for vst.

vtotc=-1.49e-4 V/C

Temperature parameter for vto.

betatce=0.0 1/C

Temperature coefficient for beta.

rdtc=0.0 1/C

Temperature parameter for rd.

rstc=0.0 1/C

Temperature parameter for rs.

xti=0.0

Temperature exponent for effect on is.

eg=1.11 V

Energy band gap.

p=0.32

White noise coefficient.

af=1.0

Flicker (1/f) noise exponent.

kf=0.0

Flicker (1/f) noise coefficient.

ffe=1.0

Flicker (1/f) noise coefficient.

vgs (V)

Gate-source voltage.

vds (V)

Drain-source voltage.

id (A)

Drain current.

ig (A)

Gate current.

is (A)

Source current.

ids (A)

Drain-to-source current.

gm (S)

Common-source transconductance.

gds (S)

Common-source output conductance.

vth (V)

Threshold voltage.

cgs (F)

Gate-source capacitance.

cgd (F)

Gate-drain capacitance.

pwr (W)

Power at operating point.

vgsi

Voltage between internal G-S.

vgdi

Voltage between internal G-D.

vgst

Vgsi after Tau's delay.

vgdt

Vgdi after Tau's delay.