GaAs MESFET (tom3)
TOM3 stands for Triquint Own Model version 3. It is an improved GaAs MESFET developed by David H. Smith.
This device is supported within altergroups.
Sample Instance Statement
mt1 (2 1 0) tom3mos area=1 region=fwd
Sample Model Statement
model tom3mos tom3 vto=-0.55 alpha=3.9 beta=0.001 gamma=0.075 delta=100 rd=550 rs=550 rg=1 is=1.0e-30 cds=3e-16
Instance Syntax
Name d g s ModelName parameter=value ...
Instance Parameters
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area=1
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Junction area factor.
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m=1
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Multiplicity factor.
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isnoisy=yes
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Should device generate noise? Possible values are yes and no.
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region=triode
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Estimated operating region. Possible values are off, triode, sat, or subth.
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trise=0 C
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Temperature rise from ambient.
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Model Syntax
model modelName tom3 parameter=value ...
Model Parameters
Device type parameters
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type=n
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Transistor type. Possible values are n or p.
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Drain current parameters
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vto=-2.5 V
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Threshold voltage.
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alpha=2 1/V
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Knee-voltage parameter.
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beta=0.1 A/V2
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Transconductance parameter.
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gamma=0 1/V
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Threshold shifting parameter.
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lambda=0.0 V
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Slope of drain characteristic.
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q=2
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Power-law parameter.
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k=2.0
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knee-function factor.
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Subthreshold parameters
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vst=1 V
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Subthreshold slope.
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mst=0 1/V
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Subthreshold slope drain parameter.
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Parasitic resistance parameters
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rd=0 Ω
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Drain resistance (/area).
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rs=0 Ω
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Source resistance (/area).
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rg=0 Ω
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Gate resistance (/area).
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minr=0.1 Ω
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Minimum source/drain/gate resistance.
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Junction diode model parameters
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is=0.0 A
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Gate diode saturation current (*area).
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n=1
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Emission coefficient for the gate junction.
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imelt=`imax' A
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Explosion current (*area).
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dskip=yes
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Use simple piece-wise linear model for diode currents below 0.1*iabstol. Possible values are no or yes.
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ilk=0.0 A
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Gate leakage diode saturation current (*area).
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plk=1.0 V
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Gate leakage diode potential.
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Junction capacitance model parameters
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cds=0 F
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Drain-to-source capacitance.
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tau=0 s
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Conduction current delay time.
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qgqh=0.0
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Charge parameter.
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qgsh=0.0
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Charge parameter.
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qgdh=0.0
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Charge parameter.
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qgio=1.0e-06
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Charge parameter.
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qgql=0.0
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Charge parameter.
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qgag=1.0
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Charge parameter.
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qgad=1.0
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Charge parameter.
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qgcl=0.0
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Charge parameter.
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qggb=1.0
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Charge parameter.
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qggo=0.0
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Charge parameter.
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Temperature effects parameters
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tnom (C)
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Parameters measurement temperature. Default set by options.
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xti=0
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Temperature exponent for effect on is.
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eg=1.11 V
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Energy band gap.
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vtotc=0 V/C
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Temperature coefficient for vto.
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alphatce=0 1/C
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Temperature coefficient for alpha.
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betatce=0 1/C
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Temperature coefficient for beta.
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gammatc=0 1/C
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Temperature coefficient for gamma.
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trs1=0 1/C
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Temperature parameter for source resistance.
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trd1=0 1/C
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Temperature parameter for drain resistance.
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trg1=0 1/C
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Temperature parameter for gate resistance.
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vsttc=0 1/C
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Temperature coefficient for Vst.
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msttc=0 1/C
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Temperature coefficient for Mst.
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Operating region warning control parameters
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imax=1 A
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Maximum allowable current (*area).
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bvj=∞ V
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Junction reverse breakdown voltage.
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Noise model parameters
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kf=0
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Flicker (1/f) noise coefficient.
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af=1
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Flicker (1/f) noise exponent.
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kfd=0
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Flicker noise (1/f) coefficient for gate diodes.
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afd=1
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Flicker noise (1/f) exponent for gate diodes.
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The imax parameter aids convergence and prevents numerical overflow. The junction characteristics of the FET are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor and a warning is printed. The bv parameter detects the junction breakdown only. The breakdown currents of the junctions are not modeled.
Operating-Point Parameters
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type=n
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Transistor type. Possible values are n or p.
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region=triode
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Estimated operating region. Possible values are off, triode, sat, or subth.
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vgs (V)
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Gate-source voltage.
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vds (V)
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Drain-source voltage.
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id (A)
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Drain current.
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ig (A)
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Gate current.
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ids (A)
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Drain-to-source current.
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gm (S)
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Common-source transconductance.
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gds (S)
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Common-source output conductance.
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vth (V)
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Threshold voltage.
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cgs (F)
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Gate-source capacitance.
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cgd (F)
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Gate-drain capacitance.
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cds (F)
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Drain-source capacitance.
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qg (Coul)
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Gate charge.
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qd (Coul)
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Drain charge.
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qs (Coul)
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Source charge.
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pwr (W)
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Power at op point.
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GaAs MESFET (TOM3V1)
TOM3_V1 stands for Triquint Own Model version-3. It is an improved GaAs MESFET.
This device is supported within altergroups.
Sample Instance Statement
mt1 (2 1 0) tom3v1mos w=5 ng=2 m=2
Sample Model Statement
model tom3v1mos tom3v1 vto=-1.9 alpha=2.8 beta=0.01 lambda=-0.044 gamma=0.2
q=2.5 k=3.5 vst=0.03 mst=0.1 ilk=5.0e-7 plk=2 kgamma=0.66 taugd=5.0e-9
ctau=5.0e-15 qgql=1.0e-16 qgqh=-3.0e-16 qgi0=3.0e-16 qgag=3.0 qgad=2.3
qggb=90.0 qgcl=3.0e-16 qgsh=5.0e-16 qgdh=1e-16 qgg0=3e-16 capmod=2 cds=0.26e-15
tau=3.0e-12 rd=0.01 rg=0.01 rgmet=0 rs=0.01 is=7.0e-12 eta=1.9
alphatce=6.7337e-3 gammatc=2.3e-3 msttc=2e-3 vsttc=0.00031 vtotc=-119e-6
betatce=1e-3 rdtc=3e-3 rstc=3e-3 xti=2.0 eg=1.91 p=0.5 af=1.3 kf=3.86e-11 ffe=2.0
Instance Syntax
Name ( d g s ) ModelName <parameter=value> ...
Instance Parameters
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m=1
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Multiplicity factor.
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w=50 um
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Gate width.
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ng=6
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Number of gate fingers.
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trise=0.0 C
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Temperature rise from ambient.
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Model Syntax
model ModelName tom3v1 <parameter=value> ...
Model Parameters
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tnom=25 C
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Parameters measurement temperature.
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vto=-2.0 V
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Threshold voltage.
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alpha=3.0 1/V
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Knee-voltage parameter.
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beta=0.05 A/V^q
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Transconductance parameter.
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lambda=0.0 1/V
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Slope of drain characteristic.
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gamma=0.1
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Threshold shifting parameter.
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q=2.0
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Power-law parameter.
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k=3.0
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knee-function factor.
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vst=0.05 V
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Subthreshold slope.
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mst=0.0 1/V
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Subthreshold slope drain parameter.
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ilk=1.0e-7 A/um
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Gate leakage diode saturation current (/w).
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plk=2.25 V
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Gate leakage diode potential.
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kgamma=0.33
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Internal vcvs parameter.
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taugd=1.0e-9 s
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Time constant for Ctau.
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ctau=1.0e-15 F
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Drain-to-source dispersion capacitance.
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qgql=5.0e-16 Coul/um
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Charge parameter.
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qgqh=-2.0e-16 Coul/um
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Charge parameter.
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qgi0=1.0e-16 A/um
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Charge parameter.
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qgag=1.0 1/V
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Charge parameter.
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qgad=1.0 1/V
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Charge parameter.
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qggb=100.0 um/W
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Charge parameter.
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qgcl=2.0e-16 F/um
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Charge parameter.
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qgsh=1.0e-16 F/um
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Charge parameter.
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qgdh=0.0 F/um
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Charge parameter.
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qgg0=0.0 F/um
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Charge parameter.
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capmod=1
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Capacitance model selector.
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cds=0.0 F
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Drain-to-source capacitance.
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tau=1.0e-12 s
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Conduction current delay time.
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rd=0.0 Ohm*um
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Drain resistance (*w).
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rg=0.0 Ohm*um
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Gate resistance (*w).
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rgmet=0.0 Ohm/um
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Metal resistance in gate (/w).
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rs=0.0 Ohm*um
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Source resistance (*w).
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is=1.0e-12 A/um
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Gate diode saturation current (/w).
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eta=1.0
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Parameter for 'is'.
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alphatce=7.7337e-3 1/C
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Temperature parameter for `alpha'.
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gammatc=0.0 1/C
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Temperature parameter for `gamma'.
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msttc=0.0 1/(V*C)
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Temperature parameter for 'mst'.
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vsttc=0.0 V/C
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Temperature parameter for 'vst'.
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vtotc=-1.49e-4 V/C
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Temperature parameter for `vto'.
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betatce=0.0 1/C
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Temperature coefficient for `beta'.
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rdtc=0.0 1/C
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Temperature parameter for rd.
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rstc=0.0 1/C
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Temperature parameter for rs.
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xti=0.0
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Temperature exponent for effect on `is'.
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eg=1.11 V
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Energy band gap.
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p=0.32
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White noise coefficient.
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af=1.0
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Flicker (1/f) noise exponent.
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kf=0.0
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Flicker (1/f) noise coefficient.
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ffe=1.0
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Flicker (1/f) noise coefficient.
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Operating-Point Parameters
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vgs (V)
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Gate-source voltage.
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vds (V)
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Drain-source voltage.
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id (A)
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Drain current.
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ig (A)
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Gate current.
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is (A)
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Source current.
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ids (A)
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Drain-to-source current.
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gm (S)
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Common-source transconductance.
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gds (S)
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Common-source output conductance.
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vth (V)
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Threshold voltage.
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cgs (F)
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Gate-source capacitance.
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cgd (F)
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Gate-drain capacitance.
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pwr (W)
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Power at operating point.
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Related Topics
TriQuint Owned Models (tom2 and tom3/tom3v1)
Model Equations
Scaling Effects
New features from TOM3 to TOM3v1
Model Usage (tom2)
Component Statements
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