Model Equations

Channel Current Ids

TOM2

(-1)

where

(-2)

TOM3/TOM3V1

(-3)

where

(-4)

(-5)

(-6)

(-7)

(-8)

Gate Current Ig

TOM2

(-9)

(-10)

TOM3/TOM3V1

(-11)

(-12)

(-13)

(-14)

Gate Capacitance

TOM2

In the TOM2 model, the calculation of capacitances follows the Statz charge model.

(-15)

(-16)

where

(-17)

(-18)

(-19)

(-20)

(-21)

(-22)

(-23)

TOM3/TOM3V1

In the TOM3 model, the low and high power capacitance is combined with a transition function.

High power gate charge/capacitance

(-24)

(-25)

(-26)

Low Power Gate Charge

(-27)

where

(-28)

(-29)

(-30)

Transition Function

(-31)

The derivatives are as follows:

(-32)

(-33)

Combined Gate Charge/Capacitance

(-34)

(-35)

(-36)

TOM3V1

capmod=1

(-37)

capmod=2

(-38)

Temperature Effect

(-39)

(-40)

TOM2

(-41)

TOM3/TOM3V1

(-42)

(-43)

Noise Model

Source Resistance Thermal Noise

(-44)

Drain Resistance Thermal Noise

(-45)

Channel Conductance Thermal and Flicker Noise

(-46)

where

(-47)

Gate Resistance Thermal Noise (TOM3V1)

(-48)

Channel Conductance Thermal and Flicker Noise (TOM3V1)

(-49)

Related Topics

TriQuint Owned Models (tom2 and tom3/tom3v1)

Scaling Effects

New features from TOM3 to TOM3v1

Model Usage (tom2)

Component Statements

GaAs MESFET (tom3)

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