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RPI TFT Models

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The Poly-Si (PSITFT) and amorphous-Si (ATFT) TFT models are developed by the Semiconductor Devices Research Group at Rensselaer Polytechnic Institute (RPI). This chapter contains the following information for these models:

• Poly-Si TFT Model (PSITFT)
  • Equivalent Circuit
  • Model Features
  • Channel Width and Length
  • Drain and Source Parasitic Resistance
  • Threshold Voltage
  • Effective Mobility
  • Unified Electron Sheet Charge Density Per Unit Area
  • Channel Conductance
  • Saturation Voltage
  • Channel Current
  • Kink Effect Current
  • Subthreshold Leakage Current
  • Parasitic Resistance Dependence
  • Gate-Drain/Source Resistance
  • Temperature Dependence
  • Capacitance
  • ACM Option
  • Scaling Effects
  • Component Statements
• Amorphous-Si TFT Model (ATFT)
  • Equivalent Circuit
  • Model Features
  • Drain Current
  • Temperature Dependence
  • Capacitance
  • Component Statements
  • Component Statements

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