l=10e-6 m

Design length.

w=10e-6 m

Design width.

sa=0.0 m

Distance between OD-edge and poly from one side.

sb=0.0 m

Distance between OD-edge and poly from other side.

sd=0.0 m

Distance between neighboring fingers.

sca=0.0

Integral of the first distribution function for scattered well dopants.

scb=0.0

Integral of the second distribution function for scattered well dopants.

scc=0.0

Integral of the third distribution function for scattered well dopants.

sc=0.0 m

Distance between OD-edge and nearest well edge.

delvto=0.0 V

Threshold voltage shift parameter.

factuo=1.0

Zero-field mobility pre-factor.

absource=1E-12 m²

Bottom area of source junction.

lssource=1E-6 m

STI-edge length of source junction.

lgsource=1E-6 m

Gate-edge length of source junction.

abdrain=1E-12 m²

Bottom area of drain junction.

lsdrain=1E-6 m

STI-edge length of drain junction.

lgdrain=1E-6 m

Gate-edge length of drain junction.

as=1E-12 m²

Bottom area of source junction.

ps=1E-6 m

Perimeter of source junction.

ad=1E-12 m²

Bottom area of drain junction.

pd=1E-6 m

Perimeter of drain junction.

mulid0=1

Ids multiplier.

mult=1.0

Number of devices in parallel.

nf=1.0

Number of fingers.

ngcon=1.0

Number of gate contacts.

xgw=1.0E-7 m

Distance from the gate contact to the channel edge.

region=triode

Estimated operating region. %Z outputs the number (0-4) in a rawfile. Possible values are off, triode, sat, subth,  and breakdown.

trise=0.0 K

Temperature rise from ambient.

m=1.0

Multiplicity factor.

isnoisy=yes

Should device generate noise. Possible values are yes and no.

level=102

Model level.

type=n

Channel type parameter. Possible values are n: NMOS and p: PMOS.

tr=value of tnom C

Nominal (reference) temperature.

swnqs=0

Flag for NQS, 0,off, 1, 2, 3, 5, or 9,number of collocation points.

swigate=0

Flag for gate current, 0,turn off IG.

swimpact=0

Flag for impact ionization current, 0,turn off II.

swgidl=0

Flag for GIDL current, 0,turn off IGIDL.

swjuncap=0

Flag for juncap, 0,turn off juncap.

swjunasym=0

Flag for asymmetric junctions; 0,symmetric, 1,asymmetric.

qmc=1.0

Quantum-mechanical correction factor.

version=102.32

This parameter accepts only a real number values, for example, use 102.21 for the 102.2.1 version. The available versions are 102.2, 102.21(102.2.1), 102.3, 102.32 (102.3.2), 102.33 (102.3.3), 102.34 (102.3.4), 102.4 (102.4.0) and 102.5 (102.5.0).

geomod=1

1 for geometrical model and 0 for electrical model.

binmod=0

1 for bin model and 0 for non-bin model.

scalelev=102

102 for local, 1020 for global model and 1021 for bin model.

compatible=spectre

Compatibility parameter. Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice, and mica.

vfb=(-1.0) V

Flatband voltage at TR.

stvfb=5.0e-4 V/K

Temperature dependence of VFB.

tox=2.0e-09 m

Gate oxide thickness.

epsrox=3.9

Relative permittivity of gate dielectric.

neff=5.0e+23 m^-3

Effective substrate doping.

vnsub=0.0 V

Effective doping bias-dependence parameter.

nslp=0.05 V

Effective doping bias-dependence parameter.

dnsub=0.0 V^-1

Effective doping bias-dependence parameter.

dphib=0.0 V

Offset parameter for PHIB.

np=1.0e+26 m^-3

Gate poly-silicon doping.

ct=0.0

Interface states factor.

toxov=2.0e-09 m

Overlap oxide thickness.

toxovd=2.0e-09 m

Overlap oxide thickness for drain side.

nov=5.0e+25 m^-3

Effective doping of overlap region.

novd=5.0e+25 m^-3

Effective doping of overlap region for drain side.

cf=0.0

DIBL-parameter.

cfb=0.0 V^-1

Back bias dependence of CF.

betn=7e-2 m²/V/s

Channel aspect ratio times zero-field mobility.

stbet=1.0

Temperature dependence of BETN.

mue=0.5 m/V

Mobility reduction coefficient at TR.

stmue=0.0

Temperature dependence of MUE.

themu=1.5

Mobility reduction exponent at TR.

stthemu=1.5

Temperature dependence of THEMU.

cs=0.0

Coulomb scattering parameter at TR.

stcs=0.0

Temperature dependence of CS.

xcor=0.0 V^-1

Non-universality factor.

stxcor=0.0

Temperature dependence of XCOR.

feta=1.0

Effective field parameter.

rs=30 Ω

Series resistance at TR.

strs=1.0

Temperature dependence of RS.

rsb=0.0 V^-1

Back-bias dependence of series resistance.

rsg=0.0 V^-1

Gate-bias dependence of series resistance.

thesat=1.0 V^-1

Velocity saturation parameter at TR.

stthesat=1.0

Temperature dependence of THESAT.

thesatb=0.0 V^-1

Back-bias dependence of velocity saturation.

thesatg=0.0 V^-1

Gate-bias dependence of velocity saturation.

ax=3.0

Linear/saturation transition factor.

alp=0.01

CLM pre-factor.

alp1=0.00 V

CLM enhancement factor above threshold.

alp2=0.00 V^-1

CLM enhancement factor below threshold.

vp=0.05 V

CLM logarithm dependence factor.

a1=1.0

Impact-ionization pre-factor.

a2=10.0 V

Impact-ionization exponent at TR.

sta2=0.0 V

Temperature dependence of A2.

a3=1.0

Saturation-voltage dependence of impact-ionization.

a4=0.0 V^-0.5

Back-bias dependence of impact-ionization.

gco=0.0

Gate tunneling energy adjustment.

iginv=0.0 A

Gate channel current pre-factor.

igov=0.0 A

Gate overlap current pre-factor.

igovd=0.0 A

Gate overlap current pre-factor for drain side.

stig=2.0

Temperature dependence of IGINV and IGOV.

gc2=0.375

Gate current slope factor.

gc3=0.063

Gate current curvature factor.

chib=3.1 V

Tunneling barrier height.

agidl=0.0 A/V³

GIDL pre-factor.

agidld=0.0 A/V³

GIDL pre-factor for drain side.

bgidl=41.0 V

GIDL probability factor at TR.

bgidld=41.0 V

GIDL probability factor at TR for drain side.

stbgidl=0.0 V/K

Temperature dependence of BGIDL.

stbgidld=0.0 V/K

Temperature dependence of BGIDL for drain side.

cgidl=0.0

Back-bias dependence of GIDL.

cgidld=0.0

Back-bias dependence of GIDL for drain side.

cox=1.0e-14 F

Oxide capacitance for intrinsic channel.

cgov=1.0e-15 F

Oxide capacitance for gate-drain/source overlap.

cgovd=1.0e-15 F

Oxide capacitance for gate-drain overlap.

cgbov=0.0 F

Oxide capacitance for gate-bulk overlap.

cfr=0.0 F

Outer fringe capacitance.

cfrd=0.0 F

Outer fringe capacitance for drain side.

fnt=1.0

Thermal noise coefficient.

fntexc=0.0

Excess noise coefficient.

nfa=8.0e+22 V^-1/m⁴

First coefficient of flicker noise.

nfb=3.0e+07 V^-1/m²

Second coefficient of flicker noise.

nfc=0.0 V^-1

Third coefficient of flicker noise.

ef=1.0

Flicker noise frequency exponent.

munqs=1.0

Relative mobility for NQS modelling.

rg=0.0 Ω

Gate resistance.

rbulk=0.0 Ω

Bulk resistance between node BP and BI.

rwell=0.0 Ω

Well resistance between node BI and B.

rjuns=0.0 Ω

Source-side bulk resistance between node BI and BS.

rjund=0.0 Ω

Drain-side bulk resistance between node BI and BD.

lvaro=0.0 m

Geometry-independent difference between actual and programmed gate length.

lvarl=0.0

Length dependence of LVAR.

lvarw=0.0

Width dependence of LVAR.

lap=0.0 m

Effective channel length reduction per side.

wvaro=0.0 m

Geometry-independent difference between actual and programmed field-oxide opening.

wvarl=0.0

Length dependence of WVAR.

wvarw=0.0

Width dependence of WVAR.

wot=0.0 m

Effective channel width reduction per side.

dlq=0.0 m

Effective channel length reduction for CV.

dwq=0.0 m

Effective channel width reduction for CV.

vfbo=(-1.0) V

Geometry-independent flat-band voltage at TR.

vfbl=0.0

Length dependence of flat-band voltage.

vfbw=0.0

Width dependence of flat-band voltage.

vfblw=0.0

Area dependence of flat-band voltage.

stvfbo=5e-4 V/K

Geometry-independent temperature dependence of VFB.

stvfbl=0.0

Length dependence of temperature dependence of VFB.

stvfbw=0.0

Width dependence of temperature dependence of VFB.

stvfblw=0.0

Area dependence of temperature dependence of VFB.

toxo=2e-9 m

Gate oxide thickness.

epsroxo=3.9

Relative permittivity of gate dielectric.

nsubo=3e23 m^-3

Geometry-independent substrate doping.

nsubw=0.0

Width dependence of background doping NSUBO due to segregation.

wseg=1e-8 m

Character length of segregation of background doping NSUBO.

npck=1e24 m^-3

Pocket doping level.

npckw=0.0

Width dependence of pocket doping NPCK due to segregation.

wsegp=1e-8 m

Character length of segregation of pocket doping NPCK.

lpck=1e-8 m

Character length of lateral doping profile.

lpckw=0.0

Width dependence of character length of lateral doping profile.

fol1=0.0

First length dependence coefficient for short channel body effect.

fol2=0.0

Second length dependence coefficient for short channel body effect.

vnsubo=0.0 V

Effective doping bias-dependence parameter.

nslpo=0.05 V

Effective doping bias-dependence parameter.

dnsubo=0.0 V^-1

Effective doping bias-dependence parameter.

dphibo=0.0 V

Geometry-independent offset of PHIB.

dphibl=0.0 V

Length dependence offset of PHIB.

dphiblexp=1.0

Exponent for length dependence of offset of PHIB.

dphibw=0.0

Width dependence of offset of PHIB.

dphiblw=0.0

Area dependence of offset of PHIB.

npo=1e26 m^-3

Geometry-independent gate poly-silicon doping.

npl=0.0

Length dependence of gate poly-silicon doping.

cto=0.0

Geometry-independent interface states factor.

ctl=0.0

Length dependence of interface states factor.

ctlexp=1.0

Exponent for length dependence of interface states factor.

ctw=0.0

Width dependence of interface states factor.

ctlw=0.0

Area dependence of interface states factor.

toxovo=2e-9 m

Overlap oxide thickness.

toxovdo=2e-9 m

Overlap oxide thickness for drain side.

lov=0 m

Overlap length for gate/drain and gate/source overlap capacitance.

lovd=0 m

Overlap length for gate/drain overlap capacitance.

novo=5e25 m^-3

Effective doping of overlap region.

novdo=5e25 m^-3

Effective doping of overlap region for drain side.

cfl=0.0

Length dependence of DIBL-parameter.

cflexp=2.0

Exponent for length dependence of CF.

cfw=0.0

Width dependence of CF.

cfbo=0.0 V^-1

Back-bias dependence of CF.

uo=5e-2 m²/V/s

Zero-field mobility at TR.

fbet1=0.0

Relative mobility decrease due to first lateral profile.

fbet1w=0.0

Width dependence of relative mobility decrease due to first lateral profile.

lp1=1e-8 m

Mobility-related characteristic length of first lateral profile.

lp1w=0.0

Width dependence of mobility-related characteristic length of first lateral profile.

fbet2=0.0

Relative mobility decrease due to second lateral profile.

lp2=1e-8 m

Mobility-related characteristic length of second lateral profile.

betw1=0.0

First higher-order width scaling coefficient of BETN.

betw2=0.0

Second higher-order width scaling coefficient of BETN.

wbet=1e-9 m

Characteristic width for width scaling of BETN.

stbeto=1.0

Geometry-independent temperature dependence of BETN.

stbetl=0.0

Length dependence of temperature dependence of BETN.

stbetw=0.0

Width dependence of temperature dependence of BETN.

stbetlw=0.0

Area dependence of temperature dependence of BETN.

mueo=0.5 m/V

Geometry-independent mobility reduction coefficient at TR.

muew=0.0

Width dependence of mobility reduction coefficient at TR.

stmueo=0.0

Temperature dependence of MUE.

themuo=1.5

Mobility reduction exponent at TR.

stthemuo=1.5

Temperature dependence of THEMU.

cso=0.0

Geometry-independent coulomb scattering parameter at TR.

csl=0.0

Length dependence of CS.

cslexp=0.0

Exponent for length dependence of CS.

csw=0.0

Width dependence of CS.

cslw=0.0

Area dependence of CS.

stcso=0.0

Temperature dependence of CS.

xcoro=0.0 V^-1

Geometry-independent non-universality parameter.

xcorl=0.0

Length dependence of non-universality parameter.

xcorw=0.0

Width dependence of non-universality parameter.

xcorlw=0.0

Area dependence of non-universality parameter.

stxcoro=0.0

Temperature dependence of XCOR.

fetao=1.0

Effective field parameter.

rsw1=2.5e3 Ω

Source/drain series resistance for 1 um wide channel at TR.

rsw2=0.0

Higher-order width scaling of RS.

strso=1.0

Temperature dependence of RS.

rsbo=0.0 V^-1

Back-bias dependence of series resistance.

rsgo=0.0 V^-1

Gate-bias dependence of series resistance.

thesato=0.0 V^-1

Geometry-independent velocity saturation parameter at TR.

thesatl=0.05 V^-1

Length dependence of THESAT.

thesatlexp=1.0

Exponent for length dependence of THESAT.

thesatw=0.0

Width dependence of velocity saturation parameter.

thesatlw=0.0

Area dependence of velocity saturation parameter.

stthesato=1.0

Geometry-independent temperature dependence of THESAT.

stthesatl=0.0

Length dependence of temperature dependence of THESAT.

stthesatw=0.0

Width dependence of temperature dependence of THESAT.

stthesatlw=0.0

Area dependence of temperature dependence of THESAT.

thesatbo=0.0 V^-1

Back-bias dependence of velocity saturation.

thesatgo=0.0 V^-1

Gate-bias dependence of velocity saturation.

axo=18

Geometry-independent linear/saturation transition factor.

axl=0.4

Length dependence of AX.

alpl=5e-4

Length dependence of ALP.

alplexp=1.0

Exponent for length dependence of ALP.

alpw=0.0

Width dependence of ALP.

alp1l1=0.0 V

Length dependence of CLM enhancement factor above threshold.

alp1lexp=0.5

Exponent for length dependence of ALP1.

alp1l2=0.0

Second_order length dependence of ALP1.

alp1w=0.0

Width dependence of ALP1.

alp2l1=0.0 V^-1

Length dependence of CLM enhancement factor below threshold.

alp2lexp=0.5

Exponent for length dependence of ALP2.

alp2l2=0.0

Second_order length dependence of ALP2.

alp2w=0.0

Width dependence of ALP2.

vpo=0.05 V

CLM logarithmic dependence parameter.

a1o=1.0

Geometry-independent impact-ionization pre-factor.

a1l=0.0

Length dependence of A1.

a1w=0.0

Width dependence of A1.

a2o=10 V

Impact-ionization exponent at TR.

sta2o=0.0 V

Temperature dependence of A2.

a3o=1.0

Geometry-independent saturation-voltage dependence of II.

a3l=0.0

Length dependence of A3.

a3w=0.0

Width dependence of A3.

a4o=0.0 V^-0.5

Geometry-independent back-bias dependence of II.

a4l=0.0

Length dependence of A4.

a4w=0.0

Width dependence of A4.

gcoo=0.0

Gate tunneling energy adjustment.

iginvlw=0.0 A

Gate channel current pre-factor for 1 um^2 channel area.

igovw=0.0 A

Gate overlap current pre-factor for 1 um wide channel.

igovdw=0.0 A

Gate overlap current pre-factor for 1 um wide channel for drain side.

stigo=2.0

Temperature dependence of IGINV and IGOV.

gc2o=0.375

Gate current slope factor.

gc3o=0.063

Gate current curvature factor.

chibo=3.1 V

Tunneling barrier height.

agidlw=0.0 A/V³

Width dependence of GIDL pre-factor.

agidldw=0.0 A/V³

Width dependence of GIDL pre-factor for drain side.

bgidlo=41 V

GIDL probability factor at TR.

bgidldo=41 V

GIDL probability factor at TR for drain side.

stbgidlo=0.0 V/K

Temperature dependence of BGIDL.

stbgidldo=0.0 V/K

Temperature dependence of BGIDL for drain side.

cgidlo=0.0

Back-bias dependence of GIDL.

cgidldo=0.0

Back-bias dependence of GIDL for drain side.

cgbovl=0.0 F

Oxide capacitance for gate-bulk overlap for 1 um long channel.

cfrw=0.0 F

Outer fringe capacitance for 1 um wide channel.

cfrdw=0.0 F

Outer fringe capacitance for 1 um wide channel for drain side.

fnto=1.0

Thermal noise coefficient.

fntexcl=0.0

Length dependence coefficient of excess noise.

nfalw=8e22 V^-1/m⁴

First coefficient of flicker noise for 1 um^2 channel area.

nfblw=3e7 V^-1/m²

Second coefficient of flicker noise for 1 um^2 channel area.

nfclw=0.0 V^-1

Third coefficient of flicker noise for 1 um^2 channel area.

efo=1.0

Flicker noise frequency exponent.

lintnoi=0.0 m

Length offset for flicker noise.

alpnoi=2.0

Exponent for length offset for flicker noise.

dta=0 K

Temperature offset w.r.t. ambient circuit temperature.

kvthoweo=0

Geometrical independent threshold shift parameter.

kvthowel=0

Length dependent threshold shift parameter.

kvthowew=0

Width dependent threshold shift parameter.

kvthowelw=0

Area dependent threshold shift parameter.

kuoweo=0

Geometrical independent mobility degradation factor.

kuowel=0

Length dependent mobility degradation factor.

kuowew=0

Width dependent mobility degradation factor.

kuowelw=0

Area dependent mobility degradation factor.

vds_max=infinity V

Maximum allowed voltage cross source and drain.

vgd_max=infinity V

Maximum allowed voltage cross gate and drain.

vgs_max=infinity V

Maximum allowed voltage cross gate and source/bulk.

vbd_max=infinity V

Maximum allowed voltage cross source/drain and bulk.

vbs_max=vbd_max V

Maximum allowed voltage cross source and bulk.

vgb_max=infinity V

Maximum allowed voltage cross gate and bulk.

vgdr_max=vgd_max V

Maximum allowed reverse voltage cross gate and drain.

vgsr_max=vgs_max V

Maximum allowed reverse voltage cross gate and source.

vgbr_max=vgb_max V

Maximum allowed reverse voltage cross gate and bulk.

vbsr_max=vbs_max V

Maximum allowed reverse voltage cross source and bulk.

vbdr_max=vbd_max V

Maximum allowed reverse voltage cross source/drain and bulk.

munqso=1.0

Relative mobility for NQS modelling.

rgo=0.0 Ω

Gate resistance.

rbulko=0.0 Ω

Bulk resistance between node BP and BI.

rwello=0.0 Ω

Well resistance between node BI and B.

rjunso=0.0 Ω

Source-side bulk resistance between node BI and BS.

rjundo=0.0 Ω

Drain-side bulk resistance between node BI and BD.

rint=0.0 Ω/Sqr

Contact resistance between silicide and ploy.

rvpoly=0.0 Ω/Sqr

Vertical poly resistance.

rshg=0.0 Ω/Sqr

Gate electrode diffusion sheet resistance.

dlsil=0.0 m

Silicide extension over the physical gate length.

saref=1.0e-6 m

Reference distance between OD-edge and poly from one side.

sbref=1.0e-6 m

Reference distance between OD-edge and poly from other side.

wlod=0 m

Width parameter.

kuo=0 m

Mobility degradation/enhancement coefficient.

kvsat=0 m

Saturation velocity degradation/enhancement coefficient.

tkuo=0

Temperature dependence of KUO.

lkuo=0 m^LLODKUO

Length dependence of KUO.

wkuo=0 m^WLODKUO

Width dependence of KUO.

pkuo=0 m^(LLODKUO+WLODKUO)

Cross-term dependence of KUO.

llodkuo=0

Length parameter for UO stress effect.

wlodkuo=0

Width parameter for UO stress effect.

kvtho=0 Vm

Threshold shift parameter.

lkvtho=0 m^LLODVTH

Length dependence of KVTHO.

wkvtho=0 m^WLODVTH

Width dependence of KVTHO.

pkvtho=0 m^(LLODVTH+WLODVTH)

Cross-term dependence of KVTHO.

llodvth=0

Length parameter for VTH-stress effect.

wlodvth=0

Width parameter for VTH-stress effect.

stetao=0 m

eta0 shift factor related to VTHO change.

lodetao=1.0

eta0 shift modification factor for stress effect.

scref=10e-6 m

Distance between OD-edge and well edge of a reference device.

web=0

Coefficient for SCB.

wec=0

Coefficient for SCC.

imax=1000 A

Maximum current up to which forward current behaves exponentially.

trj=21 C

Reference temperature.

cjorbot=1E-3 Fm^-2

Zero-bias capacitance per unit-of-area of bottom component for source-bulk junction.

cjorsti=1E-9 Fm^-1

Zero-bias capacitance per unit-of-length of STI-edge component for source-bulk junction.

cjorgat=1E-9 Fm^-1

Zero-bias capacitance per unit-of-length of gate-edge component for source-bulk junction.

vbirbot=1 V

Built-in voltage at the reference temperature of bottom component for source-bulk junction.

vbirsti=1 V

Built-in voltage at the reference temperature of STI-edge component for source-bulk junction.

vbirgat=1 V

Built-in voltage at the reference temperature of gate-edge component for source-bulk junction.

pbot=0.5

Grading coefficient of bottom component for source-bulk junction.

psti=0.5

Grading coefficient of STI-edge component for source-bulk junction.

pgat=0.5

Grading coefficient of gate-edge component for source-bulk junction.

phigbot=1.16 V

Zero-temperature bandgap voltage of bottom component for source-bulk junction.

phigsti=1.16 V

Zero-temperature bandgap voltage of STI-edge component for source-bulk junction.

phiggat=1.16 V

Zero-temperature bandgap voltage of gate-edge component for source-bulk junction.

idsatrbot=1E-12 Am^-2

Saturation current density at the reference temperature of bottom component for source-bulk junction.

idsatrsti=1E-18 Am^-1

Saturation current density at the reference temperature of STI-edge component for source-bulk junction.

idsatrgat=1E-18 Am^-1

Saturation current density at the reference temperature of gate-edge component for source-bulk junction.

csrhbot=1E2 Am^-3

Shockley-Read-Hall prefactor of bottom component for source-bulk junction.

csrhsti=1E-4 Am^-2

Shockley-Read-Hall prefactor of STI-edge component for source-bulk junction.

csrhgat=1E-4 Am^-2

Shockley-Read-Hall prefactor of gate-edge component for source-bulk junction.

xjunsti=100E-9 m

Junction depth of STI-edge component for source-bulk junction.

xjungat=100E-9 m

Junction depth of gate-edge component for source-bulk junction.

ctatbot=1E2 Am^-3

Trap-assisted tunneling prefactor of bottom component for source-bulk junction.

ctatsti=1E-4 Am^-2

Trap-assisted tunneling prefactor of STI-edge component for source-bulk junction.

ctatgat=1E-4 Am^-2

Trap-assisted tunneling prefactor of gate-edge component for source-bulk junction.

mefftatbot=0.25

Effective mass (in units of m0) for trap-assisted tunneling of bottom component for source-bulk junction.

mefftatsti=0.25

Effective mass (in units of m0) for trap-assisted tunneling of STI-edge component for source-bulk junction.

mefftatgat=0.25

Effective mass (in units of m0) for trap-assisted tunneling of gate-edge component for source-bulk junction.

cbbtbot=1E-12 AV^-3

Band-to-band tunneling prefactor of bottom component for source-bulk junction.

cbbtsti=1E-18 AV^-3m

Band-to-band tunneling prefactor of STI-edge component for source-bulk junction.

cbbtgat=1E-18 AV^-3m

Band-to-band tunneling prefactor of gate-edge component for source-bulk junction.

fbbtrbot=1E9 Vm^-1

Normalization field at the reference temperature for band-to-band tunneling of bottom component for source-bulk junction.

fbbtrsti=1E9 Vm^-1

Normalization field at the reference temperature for band-to-band tunneling of STI-edge component for source-bulk junction.

fbbtrgat=1E9 Vm^-1

Normalization field at the reference temperature for band-to-band tunneling of gate-edge component for source-bulk junction.

stfbbtbot=(-1E-3) K^-1

Temperature scaling parameter for band-to-band tunneling of bottom component for source-bulk junction.

stfbbtsti=(-1E-3) K^-1

Temperature scaling parameter for band-to-band tunneling of STI-edge component for source-bulk junction.

stfbbtgat=(-1E-3) K^-1

Temperature scaling parameter for band-to-band tunneling of gate-edge component for source-bulk junction.

vbrbot=10 V

Breakdown voltage of bottom component for source-bulk junction.

vbrsti=10 V

Breakdown voltage of STI-edge component for source-bulk junction.

vbrgat=10 V

Breakdown voltage of gate-edge component for source-bulk junction.

pbrbot=4 V

Breakdown onset tuning parameter of bottom component for source-bulk junction.

pbrsti=4 V

Breakdown onset tuning parameter of STI-edge component for source-bulk junction.

pbrgat=4 V

Breakdown onset tuning parameter of gate-edge component for source-bulk junction.

cjorbotd=1E-3 Fm^-2

Zero-bias capacitance per unit-of-area of bottom component for drain-bulk junction.

cjorstid=1E-9 Fm^-1

Zero-bias capacitance per unit-of-length of STI-edge component for drain-bulk junction.

cjorgatd=1E-9 Fm^-1

Zero-bias capacitance per unit-of-length of gate-edge component for drain-bulk junction.

vbirbotd=1 V

Built-in voltage at the reference temperature of bottom component for drain-bulk junction.

vbirstid=1 V

Built-in voltage at the reference temperature of STI-edge component for drain-bulk junction.

vbirgatd=1 V

Built-in voltage at the reference temperature of gate-edge component for drain-bulk junction.

pbotd=0.5

Grading coefficient of bottom component for drain-bulk junction.

pstid=0.5

Grading coefficient of STI-edge component for drain-bulk junction.

pgatd=0.5

Grading coefficient of gate-edge component for drain-bulk junction.

phigbotd=1.16 V

Zero-temperature bandgap voltage of bottom component for drain-bulk junction.

phigstid=1.16 V

Zero-temperature bandgap voltage of STI-edge component for drain-bulk junction.

phiggatd=1.16 V

Zero-temperature bandgap voltage of gate-edge component for drain-bulk junction.

idsatrbotd=1E-12 Am^-2

Saturation current density at the reference temperature of bottom component for drain-bulk junction.

idsatrstid=1E-18 Am^-1

Saturation current density at the reference temperature of STI-edge component for drain-bulk junction.

idsatrgatd=1E-18 Am^-1

Saturation current density at the reference temperature of gate-edge component for drain-bulk junction.

csrhbotd=1E2 Am^-3

Shockley-Read-Hall prefactor of bottom component for drain-bulk junction.

csrhstid=1E-4 Am^-2

Shockley-Read-Hall prefactor of STI-edge component for drain-bulk junction.

csrhgatd=1E-4 Am^-2

Shockley-Read-Hall prefactor of gate-edge component for drain-bulk junction.

xjunstid=100E-9 m

Junction depth of STI-edge component for drain-bulk junction.

xjungatd=100E-9 m

Junction depth of gate-edge component for drain-bulk junction.

ctatbotd=1E2 Am^-3

Trap-assisted tunneling prefactor of bottom component for drain-bulk junction.

ctatstid=1E-4 Am^-2

Trap-assisted tunneling prefactor of STI-edge component for drain-bulk junction.

ctatgatd=1E-4 Am^-2

Trap-assisted tunneling prefactor of gate-edge component for drain-bulk junction.

mefftatbotd=0.25

Effective mass (in units of m0) for trap-assisted tunneling of bottom component for drain-bulk junction.

mefftatstid=0.25

Effective mass (in units of m0) for trap-assisted tunneling of STI-edge component for drain-bulk junction.

mefftatgatd=0.25

Effective mass (in units of m0) for trap-assisted tunneling of gate-edge component for drain-bulk junction.

cbbtbotd=1E-12 AV^-3

Band-to-band tunneling prefactor of bottom component for drain-bulk junction.

cbbtstid=1E-18 AV^-3m

Band-to-band tunneling prefactor of STI-edge component for drain-bulk junction.

cbbtgatd=1E-18 AV^-3m

Band-to-band tunneling prefactor of gate-edge component for drain-bulk junction.

fbbtrbotd=1E9 Vm^-1

Normalization field at the reference temperature for band-to-band tunneling of bottom component for drain-bulk junction.

fbbtrstid=1E9 Vm^-1

Normalization field at the reference temperature for band-to-band tunneling of STI-edge component for drain-bulk junction.

fbbtrgatd=1E9 Vm^-1

Normalization field at the reference temperature for band-to-band tunneling of gate-edge component for drain-bulk junction.

stfbbtbotd=(-1E-3) K^-1

Temperature scaling parameter for band-to-band tunneling of bottom component for drain-bulk junction.

stfbbtstid=(-1E-3) K^-1

Temperature scaling parameter for band-to-band tunneling of STI-edge component for drain-bulk junction.

stfbbtgatd=(-1E-3) K^-1

Temperature scaling parameter for band-to-band tunneling of gate-edge component for drain-bulk junction.

vbrbotd=10 V

Breakdown voltage of bottom component for drain-bulk junction.

vbrstid=10 V

Breakdown voltage of STI-edge component for drain-bulk junction.

vbrgatd=10 V

Breakdown voltage of gate-edge component for drain-bulk junction.

pbrbotd=4 V

Breakdown onset tuning parameter of bottom component for drain-bulk junction.

pbrstid=4 V

Breakdown onset tuning parameter of STI-edge component for drain-bulk junction.

pbrgatd=4 V

Breakdown onset tuning parameter of gate-edge component for drain-bulk junction.

swjunexp=0.0

Flag for JUNCAP express. Valid values are:

• 0: for full mode
• 1: for express model.

vjunref=2.5

The maximum source-bulk junction voltage; usually about 2*VSUP.

fjunq=0.03

Fraction below which source-bulk junction capacitance components are considered negligible.

vjunrefd=2.5

The maximum drain-bulk junction voltage; usually about 2*VSUP.

fjunqd=0.03

Fraction below which drain-bulk junction capacitance components are considered negligible.

povfb=(-1) V

Coefficient for the geometry-independent part of VFB.

plvfb=0.0 V

Coefficient for the length dependence of VFB.

pwvfb=0.0 V

Coefficient for the width dependence of VFB.

plwvfb=0.0 V

Coefficient for the length times width dependence of VFB.

postvfb=0.0005 V/K

Coefficient for the geometry-independent part of STVFB.

plstvfb=0.0 V/K

Coefficient for the length dependence of STVFB.

pwstvfb=0.0 V/K

Coefficient for the width dependence of STVFB.

plwstvfb=0.0 V/K

Coefficient for the length times width dependence of STVFB.

potox=2E-09 m

Coefficient for the geometry-independent part of TOX.

poepsrox=3.9

Coefficient for the geometry-independent part of EPSOX.

poneff=5E+23 m^-3

Coefficient for the geometry-independent part of NEFF.

plneff=0.0 m^-3

Coefficient for the length dependence of NEFF.

pwneff=0.0 m^-3

Coefficient for the width dependence of NEFF.

plwneff=0.0 m^-3

Coefficient for the length times width dependence of NEFF.

povnsub=0 V

Coefficient for the geometry-independent part of VNSUB.

ponslp=0.05 V

Coefficient for the geometry-independent part of NSLP.

podnsub=0 V^-1

Coefficient for the geometry-independent part of DNSUB.

podphib=0 V

Coefficient for the geometry-independent part of DPHIB.

pldphib=0.0 V

Coefficient for the length dependence of DPHIB.

pwdphib=0.0 V

Coefficient for the width dependence of DPHIB.

plwdphib=0.0 V

Coefficient for the length times width dependence of DPHIB.

ponp=1E+26 m^-3

Coefficient for the geometry-independent part of NP.

plnp=0.0 m^-3

Coefficient for the length dependence of NP.

pwnp=0.0 m^-3

Coefficient for the width dependence of NP.

plwnp=0.0 m^-3

Coefficient for the length times width dependence of NP.

poct=0

Coefficient for the geometry-independent part of CT.

plct=0.0

Coefficient for the length dependence of CT.

pwct=0.0

Coefficient for the width dependence of CT.

plwct=0.0

Coefficient for the length times width dependence of CT.

potoxov=2E-09 m

Coefficient for the geometry-independent part of TOXOV.

potoxovd=2E-09 m

Coefficient for the geometry-independent part of TOXOV for drain side.

ponov=5E+25 m^-3

Coefficient for the geometry-independent part of NOV.

plnov=0.0 m^-3

Coefficient for the length dependence of NOV.

pwnov=0.0 m^-3

Coefficient for the width dependence of NOV.

plwnov=0.0 m^-3

Coefficient for the length times width dependence of NOV.

ponovd=5E+25 m^-3

Coefficient for the geometry-independent part of NOV for drain side.

plnovd=0.0 m^-3

Coefficient for the length dependence of NOV for drain side.

pwnovd=0.0 m^-3

Coefficient for the width dependence of NOV for drain side.

plwnovd=0.0 m^-3

Coefficient for the length times width dependence of NOV for drain side.

pocf=0

Coefficient for the geometry-independent part of CF.

plcf=0.0

Coefficient for the length dependence of CF.

pwcf=0.0

Coefficient for the width dependence of CF.

plwcf=0.0

Coefficient for the length times width dependence of CF.

pocfb=0 V^-1

Coefficient for the geometry-independent part of CFB.

pobetn=0.07 m²/V/s

Coefficient for the geometry-independent part of BETN.

plbetn=0.0 m²/V/s

Coefficient for the length dependence of BETN.

pwbetn=0.0 m²/V/s

Coefficient for the width dependence of BETN.

plwbetn=0.0 m²/V/s

Coefficient for the length times width dependence of BETN.

postbet=1

Coefficient for the geometry-independent part of STBET.

plstbet=0.0

Coefficient for the length dependence of STBET.

pwstbet=0.0

Coefficient for the width dependence of STBET.

plwstbet=0.0

Coefficient for the length times width dependence of STBET.

pomue=0.5 m/V

Coefficient for the geometry-independent part of MUE.

plmue=0.0 m/V

Coefficient for the length dependence of MUE.

pwmue=0.0 m/V

Coefficient for the width dependence of MUE.

plwmue=0.0 m/V

Coefficient for the length times width dependence of MUE.

postmue=0

Coefficient for the geometry-independent part of STMUE.

pothemu=1.5

Coefficient for the geometry-independent part of THEMU.

postthemu=1.5

Coefficient for the geometry-independent part of STTHEMU.

pocs=0

Coefficient for the geometry-independent part of CS.

plcs=0.0

Coefficient for the length dependence of CS.

pwcs=0.0

Coefficient for the width dependence of CS.

plwcs=0.0

Coefficient for the length times width dependence of CS.

postcs=0

Coefficient for the geometry-independent part of STCS.

poxcor=0 V^-1

Coefficient for the geometry-independent part of XCOR.

plxcor=0.0 V^-1

Coefficient for the length dependence of XCOR.

pwxcor=0.0 V^-1

Coefficient for the width dependence of XCOR.

plwxcor=0.0 V^-1

Coefficient for the length times width dependence of XCOR.

postxcor=0

Coefficient for the geometry-independent part of STXCOR.

pofeta=1

Coefficient for the geometry-independent part of FETA.

pors=30 Ω

Coefficient for the geometry-independent part of RS.

plrs=0.0 Ω

Coefficient for the length dependence of RS.

pwrs=0.0 Ω

Coefficient for the width dependence of RS.

plwrs=0.0 Ω

Coefficient for the length times width dependence of RS.

postrs=1

Coefficient for the geometry-independent part of STRS.

porsb=0 V^-1

Coefficient for the geometry-independent part of RSB.

porsg=0 V^-1

Coefficient for the geometry-independent part of RSG.

pothesat=1 V^-1

Coefficient for the geometry-independent part of THESAT.

plthesat=0.0 V^-1

Coefficient for the length dependence of THESAT.

pwthesat=0.0 V^-1

Coefficient for the width dependence of THESAT.

plwthesat=0.0 V^-1

Coefficient for the length times width dependence of THESAT.

postthesat=1

Coefficient for the geometry-independent part of STTHESAT.

plstthesat=0.0

Coefficient for the length dependence of STTHESAT.

pwstthesat=0.0

Coefficient for the width dependence of STTHESAT.

plwstthesat=0.0

Coefficient for the length times width dependence of STTHESAT.

pothesatb=0 V^-1

Coefficient for the geometry-independent part of THESATB.

plthesatb=0.0 V^-1

Coefficient for the length dependence of THESATB.

pwthesatb=0.0 V^-1

Coefficient for the width dependence of THESATB.

plwthesatb=0.0 V^-1

Coefficient for the length times width dependence of THESATB.

pothesatg=0 V^-1

Coefficient for the geometry-independent part of THESATG.

plthesatg=0.0 V^-1

Coefficient for the length dependence of THESATG.

pwthesatg=0.0 V^-1

Coefficient for the width dependence of THESATG.

plwthesatg=0.0 V^-1

Coefficient for the length times width dependence of THESATG.

poax=3

Coefficient for the geometry-independent part of AX.

plax=0.0

Coefficient for the length dependence of AX.

pwax=0.0

Coefficient for the width dependence of AX.

plwax=0.0

Coefficient for the length times width dependence of AX.

poalp=0.01

Coefficient for the geometry-independent part of ALP.

plalp=0.0

Coefficient for the length dependence of ALP.

pwalp=0.0

Coefficient for the width dependence of ALP.

plwalp=0.0

Coefficient for the length times width dependence of ALP.

poalp1=0 V

Coefficient for the geometry-independent part of ALP1.

plalp1=0.0 V

Coefficient for the length dependence of ALP1.

pwalp1=0.0 V

Coefficient for the width dependence of ALP1.

plwalp1=0.0 V

Coefficient for the length times width dependence of ALP1.

poalp2=0 V^-1

Coefficient for the geometry-independent part of ALP2.

plalp2=0.0 V^-1

Coefficient for the length dependence of ALP2.

pwalp2=0.0 V^-1

Coefficient for the width dependence of ALP2.

plwalp2=0.0 V^-1

Coefficient for the length times width dependence of ALP2.

povp=0.05 V

Coefficient for the geometry-independent part of VP.

poa1=1

Coefficient for the geometry-independent part of A1.

pla1=0.0

Coefficient for the length dependence of A1.

pwa1=0.0

Coefficient for the width dependence of A1.

plwa1=0.0

Coefficient for the length times width dependence of A1.

poa2=10 V

Coefficient for the geometry-independent part of A2.

posta2=0 V

Coefficient for the geometry-independent part of STA2.

poa3=1

Coefficient for the geometry-independent part of A3.

pla3=0.0

Coefficient for the length dependence of A3.

pwa3=0.0

Coefficient for the width dependence of A3.

plwa3=0.0

Coefficient for the length times width dependence of A3.

poa4=0 V^-0.5

Coefficient for the geometry-independent part of A4.

pla4=0.0 V^-0.5

Coefficient for the length dependence of A4.

pwa4=0.0 V^-0.5

Coefficient for the width dependence of A4.

plwa4=0.0 V^-0.5

Coefficient for the length times width dependence of A4.

pogco=0

Coefficient for the geometry-independent part of GCO.

poiginv=0 A

Coefficient for the geometry-independent part of IGINV.

pliginv=0.0 A

Coefficient for the length dependence of IGINV.

pwiginv=0.0 A

Coefficient for the width dependence of IGINV.

plwiginv=0.0 A

Coefficient for the length times width dependence of IGINV.

poigov=0 A

Coefficient for the geometry-independent part of IGOV.

pligov=0.0 A

Coefficient for the length dependence of IGOV.

pwigov=0.0 A

Coefficient for the width dependence of IGOV.

plwigov=0.0 A

Coefficient for the length times width dependence of IGOV.

poigovd=0 A

Coefficient for the geometry-independent part of IGOV for drain side.

pligovd=0.0 A

Coefficient for the length dependence of IGOV for drain side.

pwigovd=0.0 A

Coefficient for the width dependence of IGOV for drain side.

plwigovd=0.0 A

Coefficient for the length times width dependence of IGOV for drain side.

postig=2

Coefficient for the geometry-independent part of STIG.

pogc2=0.375

Coefficient for the geometry-independent part of GC2.

pogc3=0.063

Coefficient for the geometry-independent part of GC3.

pochib=3.1 V

Coefficient for the geometry-independent part of CHIB.

poagidl=0 A/V³

Coefficient for the geometry-independent part of AGIDL.

plagidl=0.0 A/V³

Coefficient for the length dependence of AGIDL.

pwagidl=0.0 A/V³

Coefficient for the width dependence of AGIDL.

plwagidl=0.0 A/V³

Coefficient for the length times width dependence of AGIDL.

poagidld=0 A/V³

Coefficient for the geometry-independent part of AGIDL for drain side.

plagidld=0.0 A/V³

Coefficient for the length dependence of AGIDL for drain side.

pwagidld=0.0 A/V³

Coefficient for the width dependence of AGIDL for drain side.

plwagidld=0.0 A/V³

Coefficient for the length times width dependence of AGIDL for drain side.

pobgidl=41 V

Coefficient for the geometry-independent part of BGIDL.

pobgidld=41 V

Coefficient for the geometry-independent part of BGIDL for drain side.

postbgidl=0 V/K

Coefficient for the geometry-independent part of STBGIDL.

postbgidld=0 V/K

Coefficient for the geometry-independent part of STBGIDL for drain side.

pocgidl=0

Coefficient for the geometry-independent part of CGIDL.

pocgidld=0

Coefficient for the geometry-independent part of CGIDL for drain side.

pocox=1E-14 F

Coefficient for the geometry-independent part of COX.

plcox=0.0 F

Coefficient for the length dependence of COX.

pwcox=0.0 F

Coefficient for the width dependence of COX.

plwcox=0.0 F

Coefficient for the length times width dependence of COX.

pocgov=1E-15 F

Coefficient for the geometry-independent part of CGOV.

plcgov=0.0 F

Coefficient for the length dependence of CGOV.

pwcgov=0.0 F

Coefficient for the width dependence of CGOV.

plwcgov=0.0 F

Coefficient for the length times width dependence of CGOV.

pocgovd=1E-15 F

Coefficient for the geometry-independent part of CGOV for drain side.

plcgovd=0.0 F

Coefficient for the length dependence of CGOV for drain side.

pwcgovd=0.0 F

Coefficient for the width dependence of CGOV for drain side.

plwcgovd=0.0 F

Coefficient for the length times width dependence of CGOV for drain side.

pocgbov=0 F

Coefficient for the geometry-independent part of CGBOV.

plcgbov=0.0 F

Coefficient for the length dependence of CGBOV.

pwcgbov=0.0 F

Coefficient for the width dependence of CGBOV.

plwcgbov=0.0 F

Coefficient for the length times width dependence of CGBOV.

pocfr=0 F

Coefficient for the geometry-independent part of CFR.

plcfr=0.0 F

Coefficient for the length dependence of CFR.

pwcfr=0.0 F

Coefficient for the width dependence of CFR.

plwcfr=0.0 F

Coefficient for the length times width dependence of CFR.

pocfrd=0 F

Coefficient for the geometry-independent part of CFR for drain side.

plcfrd=0.0 F

Coefficient for the length dependence of CFR for drain side.

pwcfrd=0.0 F

Coefficient for the width dependence of CFR for drain side.

plwcfrd=0.0 F

Coefficient for the length times width dependence of CFR for drain side.

pofnt=1

Coefficient for the geometry-independent part of FNT.

pofntexc=0.0

Coefficient for the geometry-independent part of FNTEXC.

plfntexc=0.0

Coefficient for the length dependence of FNTEXC.

pwfntexc=0.0

Coefficient for the width dependence of FNTEXC.

plwfntexc=0.0

Coefficient for the length times width dependence of FNTEXC.

ponfa=8E+22 V^-1/m⁴

Coefficient for the geometry-independent part of NFA.

plnfa=0.0 V^-1/m⁴

Coefficient for the length dependence of NFA.

pwnfa=0.0 V^-1/m⁴

Coefficient for the width dependence of NFA.

plwnfa=0.0 V^-1/m⁴

Coefficient for the length times width dependence of NFA.

ponfb=3E+07 V^-1/m²

Coefficient for the geometry-independent part of NFB.

plnfb=0.0 V^-1/m²

Coefficient for the length dependence of NFB.

pwnfb=0.0 V^-1/m²

Coefficient for the width dependence of NFB.

plwnfb=0.0 V^-1/m²

Coefficient for the length times width dependence of NFB.

ponfc=0 V^-1

Coefficient for the geometry-independent part of NFC.

plnfc=0.0 V^-1

Coefficient for the length dependence of NFC.

pwnfc=0.0 V^-1

Coefficient for the width dependence of NFC.

plwnfc=0.0 V^-1

Coefficient for the length times width dependence of NFC.

poef=1.0

Coefficient for the flicker noise frequency exponent.

pokvthowe=0

Coefficient for the geometry-independent part of KVTHOWE.

plkvthowe=0

Coefficient for the length dependence part of KVTHOWE.

pwkvthowe=0

Coefficient for the width dependence part of KVTHOWE.

plwkvthowe=0

Coefficient for the length times width dependence part of KVTHOWE.

pokuowe=0

Coefficient for the geometry-independent part of KUOWE.

plkuowe=0

Coefficient for the length dependence part of KUOWE.

pwkuowe=0

Coefficient for the width dependence part of KUOWE.

plwkuowe=0

Coefficient for the length times width dependence part of KUOWE.

lmin=0 m

Dummy parameter to label binning set.

lmax=1.0 m

Dummy parameter to label binning set.

wmin=0 m

Dummy parameter to label binning set.

wmax=1.0 m

Dummy parameter to label binning set.

w=10e-6 m

Default width.

l=10e-6 m

Default length.

nf=1

Number of fingers, It served as the default value of instance nf.

mvt=0.0

DCmatch parameter.

mvto=0.0

DCmatch parameter.

mbe=0.0

DCmatch parameter.

mbeo=0.0

DCmatch parameter.

vthmod

Vth output selector. 'std' outputs model equation Vth. 'vthcc' outputs constant current Vth, and may impact simulation performance. The default value is taken from the options parameter 'vthmod'. Possible values are std and vthcc.

ivth (A)

Vth current parameter. The default value is taken from the options parameter 'ivthn' or 'ivthp', depending on the type of the model.

ivthw (m)

Width offset for constant current Vth. The default value is taken from the options parameter 'ivthw'.

ivthl (m)

Length offset for constant current Vth. The default value is taken from the options parameter 'ivthl'.

ivth_vdsmin (V)

Minimum Vds in constant current Vth calculating. The default value is taken from the options parameter 'ivth_vdsmin'.

noisemethod=oldcmi

Induced gate noise implementation. Possible values are oldcmi, subckt, newcmi, and noign.

weff (m)

Effective channel width for geometrical models.

leff (m)

Effective channel length for geometrical models.

lp_vfb (V)

Local parameter VFB after T-scaling and clipping.

lp_stvfb (V/K)

Local parameter STVFB after clipping.

lp_tox (m)

Local parameter TOX after clipping.

lp_epsrox

Local parameter EPSROX after clipping.

lp_neff (m^-3)

Local parameter NEFF after clipping.

lp_vnsub (V)

Local parameter VNSUB after clipping.

lp_nslp (V)

Local parameter NSLP after clipping.

lp_dnsub (V^-1)

Local parameter DNSUB after clipping.

lp_dphib (V)

Local parameter DPHIB after clipping.

lp_np (m^-3)

Local parameter NP after clipping.

lp_ct

Local parameter CT after clipping.

lp_toxov (m)

Local parameter TOXOV after clipping.

lp_toxovd (m)

Local parameter TOXOVD after clipping.

lp_nov (m^-3)

Local parameter NOV after clipping.

lp_novd (m^-3)

Local parameter NOVD after clipping.

lp_cf

Local parameter CF after clipping.

lp_cfb (V^-1)

Local parameter CFB after clipping.

lp_betn (m²/(V s))

Local parameter BETN after T-scaling and clipping.

lp_stbet

Local parameter STBET after clipping.

lp_mue (m/V)

Local parameter MUE after T-scaling and clipping.

lp_stmue

Local parameter STMUE after clipping.

lp_themu

Local parameter THEMU after T-scaling and clipping.

lp_stthemu

Local parameter STTHEMU after clipping.

lp_cs

Local parameter CS after T-scaling and clipping.

lp_stcs

Local parameter STCS after clipping.

lp_xcor (V^-1)

Local parameter XCOR after T-scaling and clipping.

lp_stxcor

Local parameter STXCOR after clipping.

lp_feta

Local parameter FETA after clipping.

lp_rs (Ω)

Local parameter RS after T-scaling and clipping.

lp_strs

Local parameter STRS after clipping.

lp_rsb (V^-1)

Local parameter RSB after clipping.

lp_rsg (V^-1)

Local parameter RSG after clipping.

lp_thesat (V^-1)

Local parameter THESAT after T-scaling and clipping.

lp_stthesat

Local parameter STTHESAT after clipping.

lp_thesatb (V^-1)

Local parameter THESATB after clipping.

lp_thesatg (V^-1)

Local parameter THESATG after clipping.

lp_ax

Local parameter AX after clipping.

lp_alp

Local parameter ALP after clipping.

lp_alp1 (V)

Local parameter ALP1 after clipping.

lp_alp2 (V^-1)

Local parameter ALP2 after clipping.

lp_vp (V)

Local parameter VP after clipping.

lp_a1

Local parameter A1 after clipping.

lp_a2 (V)

Local parameter A2 after T-scaling and clipping.

lp_sta2

Local parameter STA2 after clipping.

lp_a3

Local parameter A3 after clipping.

lp_a4 (1/V)

Local parameter A4 after clipping.

lp_gco

Local parameter GCO after clipping.

lp_iginv (A)

Local parameter IGINV after T-scaling and clipping.

lp_igov (A)

Local parameter IGOV after T-scaling and clipping.

lp_igovd (A)

Local parameter IGOVD after T-scaling and clipping.

lp_stig

Local parameter STIG after clipping.

lp_gc2

Local parameter GC2 after clipping.

lp_gc3

Local parameter GC3 after clipping.

lp_chib (V)

Local parameter CHIB after clipping.

lp_agidl (A/V³)

Local parameter AGIDL after clipping.

lp_agidld (A/V³)

Local parameter AGIDLD after clipping.

lp_bgidl (V)

Local parameter BGIDL after T-scaling and clipping.

lp_bgidld (V)

Local parameter BGIDLD after T-scaling and clipping.

lp_stbgidl (V/K)

Local parameter STBGIDL after clipping.

lp_stbgidld (V/K)

Local parameter STBGIDLD after clipping.

lp_cgidl

Local parameter CGIDL after clipping.

lp_cgidld

Local parameter CGIDLD after clipping.

lp_cox (F)

Local parameter COX after clipping.

lp_cgov (F)

Local parameter CGOV after clipping.

lp_cgovd (F)

Local parameter CGOVD after clipping.

lp_cgbov (F)

Local parameter CGBOV after clipping.

lp_cfr (F)

Local parameter CFR after clipping.

lp_cfrd (F)

Local parameter CFRD after clipping.

lp_fnt

Local parameter FNT after clipping.

lp_fntexc

Local parameter FNTEXC after clipping.

lp_nfa (1/(V m⁴))

Local parameter NFA after clipping.

lp_nfb (1/(V m²))

Local parameter NFB after clipping.

lp_nfc (V^-1)

Local parameter NFC after clipping.

lp_ef

Local parameter EF after clipping.

lp_rg (Ω)

Local parameter RG after clipping.

lp_rbulk (Ω)

Local parameter RBULK after clipping.

lp_rwell (Ω)

Local parameter RWELL after clipping.

lp_rjuns (Ω)

Local parameter RJUNS after clipping.

lp_rjund (Ω)

Local parameter RJUND after clipping.

lp_munqs

Local parameter MUNQS after clipping.

cjosbot (F)

Bottom component of total zero-bias source junction capacitance at device temperature.

cjossti (F)

STI-edge component of total zero-bias source junction capacitance at device temperature.

cjosgat (F)

Gate-edge component of total zero-bias source junction capacitance at device temperature.

vbisbot (V)

Built-in voltage of source-side bottom junction at device temperature.

vbissti (V)

Built-in voltage of source-side STI-edge junction at device temperature.

vbisgat (V)

Built-in voltage of source-side gate-edge junction at device temperature.

idsatsbot (A)

Total source-side bottom junction saturation current.

idsatssti (A)

Total source-side STI-edge junction saturation current.

idsatsgat (A)

Total source-side gate-edge junction saturation current.

cjosbotd (F)

Bottom component of total zero-bias drain junction capacitance at device temperature.

cjosstid (F)

STI-edge component of total zero-bias drain junction capacitance at device temperature.

cjosgatd (F)

Gate-edge component of total zero-bias drain junction capacitance at device temperature.

vbisbotd (V)

Built-in voltage of drain-side bottom junction at device temperature.

vbisstid (V)

Built-in voltage of drain-side STI-edge junction at device temperature.

vbisgatd (V)

Built-in voltage of drain-side gate-edge junction at device temperature.

idsatsbotd (A)

Total drain-side bottom junction saturation current.

idsatsstid (A)

Total drain-side STI-edge junction saturation current.

idsatsgatd (A)

Total drain-side gate-edge junction saturation current.

lv1 (m)

Alias of l.

lv2 (m)

Alias of w.

lv3 (m²)

Alias of ad.

lv4 (m²)

Alias of as.

lv11 (m)

Alias of pd.

lv12 (m)

Alias of ps.

tempeff (C)

Effective temperature for a single device.

meff

Effective multiplicity factor (m-factor).

region=triode

Estimated operating region. %Z outputs the number (0-4) in a rawfile. Possible values are off, triode, sat, subth,  and breakdown.

dtsh (K)

Device temperature rise due to self-heating.

ctype

Flag for channel type.

sdint

Flag for source-drain interchange.

is (A)

External DC current at source terminal.

ise (A)

Total source current.

ig (A)

External DC current at gate terminal.

ige (A)

Total gate current.

id (A)

External DC current at drain terminal.

ide (A)

Total drain current.

ib (A)

Total bulk current.

ibe (A)

Total bulk current.

ids (A)

Drain current, excluding avalanche, tunnel, GISL, GIDL, and junction currents.

idb (A)

Drain to bulk current.

isb (A)

Source to bulk current.

igs (A)

Gate-source tunneling current.

igd (A)

Gate-drain tunneling current.

igb (A)

Gate-bulk tunneling current.

igcs (A)

Gate-channel tunneling current (source component).

igcd (A)

Gate-channel tunneling current (drain component).

iavl (A)

Substrate current due to weak avalanche.

igisl (A)

Gate-induced source leakage current.

igidl (A)

Gate-induced drain leakage current.

ijs (A)

Total source junction current.

ijsbot (A)

Source junction current (bottom component).

ijsgat (A)

Source junction current (gate-edge component).

ijssti (A)

Source junction current (STI-edge component).

ijd (A)

Total drain junction current.

ijdbot (A)

Drain junction current (bottom component).

ijdgat (A)

Drain junction current (gate-edge component).

ijdsti (A)

Drain junction current (STI-edge component).

qg (Coul)

Intrinsic gate charge.

qd (Coul)

Intrinsic drain charge.

qb (Coul)

Intrinsic bulk charge.

qs (Coul)

Intrinsic source charge.

qgs_ov (Coul)

Overlap charge for gate-source.

qgd_ov (Coul)

Overlap charge for gate-drain.

qfgs (Coul)

Sum of outerFringe and overlap for gate-source.

qfgd (Coul)

Sum of outerFringe and overlap for gate-drain.

qgb_ov (Coul)

Gate-bulk overlap charge.

qjun_s (Coul)

Junction charge on source side.

qjun_d (Coul)

Junction charge on drain side.

vds (V)

Drain-source voltage.

vgs (V)

Gate-source voltage.

vgd (V)

External gate-drain DC voltage.

vsb (V)

Source-bulk voltage.

vdb (V)

External drain-bulk DC voltage.

vth0 (V)

Zero-bias threshold voltage.

vto (V)

Zero-bias threshold voltage.

vts (V)

Threshold voltage including back bias effects.

vth (V)

Threshold voltage including back bias and drain bias effects.

vth_drive (V)

Gate overdrive voltage including back-bias, drain bias effects.

vgt (V)

Effective gate drive voltage including back bias and drain bias effects.

vdss (V)

Drain saturation voltage at actual bias.

vdsat (V)

Drain saturation voltage.

vdsat_marg (V)

Saturation margin with respect to Vdsat for Drain voltage.

vsat (V)

Saturation limit.

pwr (W)

Power at op point.

gm (1/Ω)

Transconductance.

gmb (1/Ω)

Substrate transconductance.

go (1/Ω)

Output conductance.

gds (1/Ω)

Output conductance.

gjs (1/Ω)

Source junction conductance.

gjd (1/Ω)

Drain junction conductance.

cdd (F)

Drain capacitance.

cdg (F)

Drain-gate capacitance.

cds (F)

Drain-source capacitance.

cdb (F)

Drain-bulk capacitance.

cgd (F)

Gate-drain capacitance.

cgg (F)

Gate capacitance.

cgs (F)

Gate-source capacitance.

cgb (F)

Gate-bulk capacitance.

csd (F)

Source-drain capacitance.

csg (F)

Source-gate capacitance.

css (F)

Source capacitance.

csb (F)

Source-bulk capacitance.

cbd (F)

Bulk-drain capacitance.

cbg (F)

Bulk-gate capacitance.

cbs (F)

Bulk-source capacitance.

cbb (F)

Bulk capacitance.

co (F)

Output Drain-Source capacitance.

cm (F)

Capacitance element 1 for QS model.

cmb (F)

Capacitance element 2 for QS model.

cmx (F)

Capacitance element 3 for QS model.

tau1 (s)

Time constant related to NQS first frequency pole.

fqslim (Hz)

QS model frequency limit.

cgsol (F)

Total gate-source overlap capacitance.

cgdol (F)

Total gate-drain overlap capacitance.

cgbol (F)

Total gate-bulk overlap capacitance.

cjs (F)

Total source junction capacitance.

cjsbot (F)

Source junction capacitance (bottom component).

cjsgat (F)

Source junction capacitance (gate-edge component).

cjssti (F)

Source junction capacitance (STI-edge component).

cjd (F)

Total drain junction capacitance.

cjdbot (F)

Drain junction capacitance (bottom component).

cjdgat (F)

Drain junction capacitance (gate-edge component).

cjdsti (F)

Drain junction capacitance (STI-edge component).

lpoly (m)

Length of poly.

self_gain

Gm/Go ratio (MOSFET self-gain).

u

Transistor gain.

rout (Ω)

Small-signal output resistance.

vearly (V)

Equivalent Early voltage.

ft (Hz)

Unity gain frequency at actual bias.

beff (A/V²)

Gain factor.

gmoveri (1/V)

Transconductance efficiency.

fug (Hz)

Unity gain frequency at actual bias.

rgate (Ω)

Gate resistance.

rg (Ω)

Gate resistance.

sfl (A²/Hz)

Flicker noise current spectral density at 1 Hz.

sqrtsff (V/Hz)

Input-referred RMS white noise voltage spectral density at 1 kHz.

sqrtsfw (V/Hz)

Input-referred RMS white noise voltage spectral density.

sid (A²/Hz)

White noise current spectral density.

sig (A²/Hz)

Induced gate noise current spectral density at 1 Hz.

cigid

Imaginary part of correlation coefficient between Sig and Sid.

fknee (Hz)

Cross-over frequency above which white noise is dominant.

sigs (A²/Hz)

Gate-source current noise spectral density.

sigd (A²/Hz)

Gate-drain current noise spectral density.

siavl (A²/Hz)

Impact ionization current noise spectral density.

ssi (A²/Hz)

Total source junction current noise spectral density.

sdi (A²/Hz)

Total drain junction current noise spectral density.

tk (K)

Device Temperature.

vbs (V)

Bulk-source voltage.

lv9 (V)

Alias of vth.

lv10 (V)

Alias of vdss.

lv36 (F)

Alias of cgsol.

lv37 (F)

Alias of cgdol.

lv38 (F)

Alias of cgbol.

lv51 (m)

Alias of tox.

lx4 (A)

Alias of ids.

lx3 (V)

Alias of vds.

lx2 (V)