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PSP102 Model
PSP102 is a compact MOSFET model intended for digital, analog and RF designs. It is jointly developed by NXP Semiconductors Research and Arizona State University, and is a surface-potential based MOS model containing all relevant physical effects (mobility reduction, velocity saturation, DIBL, gate current, lateral doping gradient effects, STI stress, and so forth), to model present-day and upcoming deep-submicron bulk CMOS technologies. The JUNCAP2 source/drain junction model is an integrated part of PSP102.
PSP102 not only gives an accurate description of currents, charges, and their first order derivatives (i.e. transconductance, conductance and capacitances), but also of the higher order derivatives, resulting in an accurate description of electrical distortion behavior. The latter is especially important for analog and RF circuit design. The model, furthermore, gives an accurate description of the noise behavior of MOSFETs.
For a full description of the PSP102 model, refer to
Related Topics
Geometrical Scaling and Stress Model for Intrinsic MOSFET
Non-Quasi-Static (NQS) RF Model
Component Statements for PSP102 Models
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