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PSP103 Model

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PSP103 is a compact MOSFET model intended for digital, analog and RF designs. It is jointly developed by NXP Semiconductors Research and Arizona State University, and is a surface-potential based MOS model containing all relevant physical effects (mobility reduction, velocity saturation, DIBL, gate current, lateral doping gradient effects, STI stress, and so forth), to model present-day and upcoming deep-submicron bulk CMOS technologies. The JUNCAP2 source/drain junction model is an integrated part of PSP103.

PSP103 not only gives an accurate description of currents, charges, and their first order derivatives (i.e. transconductance, conductance and capacitances), but also of the higher order derivatives, resulting in an accurate description of electrical distortion behavior. The latter is especially important for analog and RF circuit design. The model, furthermore, gives an accurate description of the noise behavior of MOSFETs.

For a full description of the PSP103 model, see http://pspmodel.asu.edu.

This chapter contains the following information:

• Model Usage
  • Instance Syntax
  • Model Syntax
• Model History and Development
• Reference
  • Model Description
  • Geometry Scaling and Stress Model for Intrinsic MOSFET
  • PSP 103 Model Equations
  • Non-quasi-static RF model
  • Instance Parameters
  • Model Parameters
  • Parameter Index

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