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HiSIM2 Model (hisim2)

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The HiSIM2 (Hiroshima-university STARC IGFET Model) model was developed at Hiroshima University in collaboration with the STARC research center. This is the first complete surface-potential-based MOSFET model for circuit simulation based on the drift-diffusion approximation, which was originally developed by Pao and Sah. The most important advantage of the surface-potential-based modeling is the unified description of device characteristics for all bias conditions. The physical reliability of the drift-diffusion approximation has been proved by 2D device simulations with channel lengths even down to below 0.1μm.

This chapter contains the following information about the HiSIM2 model:

• Model Concepts
• Model Usage
  • Instance Syntax
  • Model Syntax
• Model Version and Development
• Version Update and Enhancement
  • Version 3.2.1 Enhancement
  • Version 3.1.1 Enhancement
  • Version 3.1.1 Enhancement
  • Version 3.1.0 Enhancement
  • Version 3.0.0 Enhancement
  • Version 2.91 Enhancement
  • Version 2.90 Enhancement
  • Version 2.80 Enhancement
  • Version 2.70 Enhancement
  • Version 2.70 Enhancement
  • Version 2.61 Enhancement
  • Version 2.60 Enhancement
• Reference
  • Model Equations
  • Component Statements

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