area

Junction area factor (alias=lv1).

perim

Junction perimeter factor. pj is an alias of perim.

l=1e-6 m

Drawn length of junction.

w=1e-6 m

Drawn width of junction.

m=1

Multiplicity factor.

scale=1

Scale factor.

region=on

Estimated operating region. Spectre generates output number (0-2) in a rawfile. Possible values are off, on, and breakdown.

trise (C)

Temperature rise from ambient.

lm=0.0 m

Length of metal capacitor.

lp=0.0 m

Length of polysilicon capacitor.

wm=0.0 m

Width of metal capacitor.

wp=0.0 m

Width of polysilicon capacitor.

isnoisy=yes

Should device generate noise. Possible values are yes and no.

level=1

Model selector. 1 = Junction, 2 = Fowler-Nordheim, 3 = Junction + additional metal and polysilicon capacitances.

dcap=2

Depletion capacitance equations selector.

bv_enable=1

Flag to enable the breakdown of diode. 1=breakdown effect enabled, 0=breakdown effect disabled.

compatible=spectre

Spice compatibility flag. Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice, mica, tispice, and pspice.

etch=0 m

Narrowing due to etching per side.

etchl=0 m

Length reduction due to etching per side.

l=1e-6 m

Drawn length of junction.

w=1e-6 m

Drawn width of junction.

js=1e-14 A/Area

Saturation current.

is=`jsA'

Alias to js.

jsw=0 A/Perim

Sidewall saturation current.

isw=`jswA'

Alias to jsw.

isp=`jswA'

Alias to jsw.

n=1

Emission coefficient.

ns=1

Sidewall emission coefficient.

ik=0.0 A/Area

High-level injection knee current, alias to ikf.

ikf=0.0 A/Area

High-level injection knee current, alias to ik.

ikp=`ikA/Area'

High-level injection knee current for sidewall.

ikr=0.0 A/Area

Reverse high-level injection knee current.

area=1

Junction area factor.

perim=0

Junction perimeter factor.

allow_scaling=no

Allow scale option and instance scale parameter to affect diode instance geometry parameters. Possible values are yes and no.

tt=0 s

Transit time.

cd=0 F/Area

Linear capacitance.

cjo=0 F/Area

Zero-bias junction capacitance.

vj=1 V

Junction potential.

pb=`vjV'

Alias to 'vj'.

m=0.5

Grading coefficient.

cjsw=0 F/Perim

Zero-bias sidewall junction capacitance.

cjp=`cjswF'

Alias to cjsw.

vjsw=1 V

Sidewall junction potential.

php=`vjswV'

Alias of vjsw.

mjsw=0.33

Sidewall grading coefficient.

fc=0.5

Forward-bias depletion capacitance threshold.

fcs=`fc'

Coefficient for forward-bias depletion sidewall capacitance.

lm=0.0 m

Length of metal capacitor ( level=3 only).

lp=0.0 m

Length of polysilicon capacitor( level=3 only).

wm=0.0 m

Width of metal capacitor( level=3 only).

wp=0.0 m

Width of polysilicon capacitor( level=3 only).

xm=0.0 m

XM accounts for masking and etching effects (level=3 only).

xp=0.0 m

XP accounts for masking and etching effects (level=3 only).

xoi=0.0 m

Thickness of the polysilicon-to-bulk oxide. Units - nAngstram (level=3 only).

xom=0.0 m

Thickness of the metal-to-bulk oxide. Units - nAngstram (level=3 only).

xw=0.0 m

Accounts for masking and etching effects( level=3 only).

vjmin=0.1

Lowest value for built-in junction potential.

bv=infinity V

Reverse breakdown voltage. Note: bv=0 is not the same as bv=infinity.

vb=`bvV'

Alias to bv.

ibv=0.001 A/Area

Current at breakdown voltage.

nz=1

Emission coefficient for Zener diode.

bvj=infinity V

Voltage at which junction breakdown warning is issued.

isr=0 A/m²

Recombination current parameter.

ibvl=0 A/m²

Low-level reverse breakdown current.

nbv=1

Reverse breakdown ideality factor.

nbvl=1

Reverse breakdown ideality factor.

rs=0 Ω

Series resistance (/area).

rsw=0 Ω

Sidewall series resistance (/perim).

gleak=0 S

Bottom junction leakage conductance (*area).

gleaksw=0 S

Sidewall junction leakage conductance (*perim).

minr=0.1 Ω

Minimum series resistance.

tlev=0

DC temperature selector.

tlevc=0

AC temperature selector.

eglev=0

DC temperature selector.

eg=1.11 V

Band gap. Note: When bandgap is not specified, the default value is dependent on temperature. It is 1.11 at temp=27C.

gap1=7.02e-4 V/C

Band gap temperature coefficient.

gap2=1108 C

Band gap temperature offset.

xti=3

Saturation current temperature exponent.

tbv1=0 1/C

Linear temperature coefficient for bv.

tcv=`tbv11/C'

Linear temperature coefficient for bv.

tbv2=0 C^-2

Quadratic temperature coefficient for bv.

tikf=0 1/C

IKF temperature coefficient (linear).

tnom (C)

Parameter measurement temperature. The default value is set by the options statement.

trise=0 C

Temperature rise from ambient.

trs=0 1/C

Linear temperature coefficient for parasitic resistance.

trs1=0 1/C

Alias of trs.

tmod=tnom C

Model temperature.

trs2=0 C^-2

Quadratic temperature coefficient for parasitic resistance.

tgs=0 1/C

Linear temperature coefficient for leakage conductance.

tgs2=0 C^-2

Quadratic temperature coefficient for leakage conductance.

cta=0 1/C

Junction capacitance temperature coefficient.

ctp=0 1/C

Sidewall junction capacitance temperature coefficient.

pta=0 V/C

Junction potential temperature coefficient.

ptp=0 V/C

Sidewall junction potential temperature coefficient.

ttt1=0.0 1/C

First order temperature coefficient for tt.

ttt2=0.0 C^-2

Second order temperature coefficient for tt.

tm1=0.0 1/C

First order temperature coefficient for Mj.

tm2=0.0 C^-2

Second order temperature coefficient for Mj.

jmelt=1.0 A/Area

Explosion current.

imelt=`jmeltA'

Alias to jmelt.

expli=`jmeltA'

Alias to jmelt.

jmax=1 A/Area

Maximum allowable current.

imax=`jmaxA'

Alias to jmax.

dskip=yes

Use simple piece-wise linear model for diode currents below 0.1*iabstol. Possible values are yes and no.

if=1e-10 A/V^nf

Forward Fowler-Nordheim current coefficient (*area).

ir=`ifA/V^nr'

Reverse Fowler-Nordheim current coefficient (*area).

ecrf=2.55e10 V/m

Forward critical field.

ecrr=`ecrfV/m'

Reverse critical field.

ef=`ecrfV/m'

Alias of ecrf.

er=`ecrrV/m'

Alias of ecrr.

nf=2

Forward voltage power.

nr=`nf'

Reverse voltage power.

tox=1e-8 m

Thickness of insulating layer.

rod=`rs'Ω

Alias for Rs (Ohmic series resistance).

jts=0 A/m²

Bottom trap-assisted saturation current density ( with Level=1 and StAlone flag=1).

jtssw=0 A/m²

Sidewall trap-assisted saturation current density ( with Level=1 and StAlone flag=1).

mrs=0.4

Fitting parameter for Rseff ( with Level=1 and StAlone flag=1).

njts=60

Non-ideality factor for Jts ( with Level=1 and StAlone flag=1).

njtssw=60

Non-ideality factor for Jtssw ( with Level=1 and StAlone flag=1).

xts=0.055

Power dependence of Jts on temperature ( with Level=1 and StAlone flag=1).

xtssw=0.055

Power dependence of Jtssw on temperature ( with Level=1 and StAlone flag=1).

tnjts=0.15

Temperature coefficient for Njts ( with Level=1 and StAlone flag=1).

tnjtssw=0.15

Temperature coefficient for Njtssw ( with Level=1 and StAlone flag=1).

trod=0

Temperature coefficient for Rod(Rs) ( with Level=1 and StAlone flag=1).

kf=0

Flicker noise (1/f) coefficient.

af=1

Flicker noise (1/f) exponent.

shrink=1.0

Shrink factor.

shrink2=0.0

Area shrink parameter.

jtun=0 A

Tunneling saturation current per area.

jtunsw=0 A

Sidewall tunneling saturation current per unit junction periphery.

ntun=30

Tunneling emission coefficient.

xtitun=3.0

Exponent for the tunneling current temperature.

egtun=eg V

Parameter for tunneling current at reverse region.

bv_max=infinity V

Maximum allowed voltage across two terminals.

fv_max=infinity V

Maximum allowed forward voltage across two terminals.

keg=1.0 V

The factor that is multiplied by EG to calculate the tunneling bandgap.

gmin_m_scaling=no

Allow gmin to be scaled by m or not.
Possible values are yes and no.

bveff (V)

Effective reverse breakdown voltage.

tempeff (C)

Effective temperature for a single device.

meff

Effective multiplicity factor (m-factor).

region=on

Estimated operating region. Spectre generates output number (0-2) in a rawfile. Possible values are off, on, and breakdown.

region0

Estimated operating region. Spectre outputs number (0-2) in a rawfile.Possible values are off, on and breakdown.

v (V)

Extrinsic diode voltage.

i (A)

Resistive diode current (alias=lx1).

pwr (W)

Power dissipation.

res (Ω)

Resistance of intrinsic diode.

resp (Ω)

Resistance of intrinsic sidewall diode.

cap (F)

Junction capacitance.

capp (F)

Sidewall junction capacitance.

cd (F)

Total junction capacitance (alias=lx5).

ctotal (F)

Total junction capacitance (alias=lx5).

trise (C)

Temperature rise from ambient.

gd (S)

Equivalent conductance (alias=lx2).

qd (Coul)

Charge of diode capacitor (alias=lx3).

vdio (V)

Voltage across diode (VD), excluding RS (alias=lx0).