Product Documentation
Spectre Circuit Simulator Components and Device Models Reference
Product Version 23.1, June 2023

Scaling Effects

This model has the following enhancements over SPICE2G.6:

1. Two base resistance models are provided.

2. Nonlinear collector resistance is implemented.

3. The integral form of the Early voltage effect is available.

4. The substrate junction includes both the diode and the capacitor.

This device is supported within altergroups.

Sample Instance Statement:

q1 (vcc net3 minus) npn_mod region=fwd area=1 m=1

Sample Model Statement:

model npn_mod bjt type=npn is=10e-13 bf=200 va=58.8 ikf=5.63e-3 rb=700 rbm=86 re=3.2 cje=0.352e-12 pe=0.76 me=0.34 tf=249e-12 cjc=0.34e-12 pc=0.55

Instance Definition

Name  c  b  e  [s] ModelName parameter=value ...

You do not have to specify the substrate terminal. If you do not specify it, the substrate is connected to ground.

Instance Parameters

area=1

Transistor area factor (alias=lv1).

areab=1

Transistor areab factor.

areac=1

Transistor areac factor.

m=1

Multiplicity factor.

trise

Temperature rise from ambient.

region=fwd

Estimated operating region. Spectre outputs a number (0-4) in a rawfile. Possible values are off, fwd, rev, sat, or breakdown.

isnoisy=yes

Should device generate noise. Possible values are no or yes.

Model Definition

model modelName bjt parameter=value ...

Model Parameters

Structural parameters

type=npn

Transistor type. Possible values are npn and pnp.

struct=vertical

Transistor structure. For pnp, the default is lateral. Possible values are vertical and lateral.

subs=1

Transistor structure. 1 for vertical structure and -1 for lateral structure. For NPN, default = 1 and for PNP, default = -1.

Saturation current parameters

is=1e-16 A

Saturation current (*area).

ise=0 A

B-E leakage saturation current. Set to c2*is if not given. (*area). If ise is greater than or equal to 1e-4, ise will be multiplied by is.

isc=0 A

B-C leakage saturation current. Set to c4*is if not specified (*area). If isc is greater than or equal to 1e-4, isc will be multiplied by is.

iss=0 A

Substrate leakage saturation current (*area).

c2=0

Forward leakage saturation current coefficient.

c4=0

Reverse leakage saturation current coefficient.

nkf=0.5

Qb exponent parameter.

nk=nkf

Qb exponent parameter. It is an alias of nkf.

B-C leakage model parameters

cbo=0 A

Extrapolated 0-volt B-C leakage current (*area).

gbo=0 S

Slope of Icbo comapred to Vbc above Vbo (*area).

vbo=0 V

Slope of Icbo compared to Vbc at Vbc=0.

tcbo=0 1/C

Temperature coefficient for cbo.

tgbo=0 1/C

Temperature coefficient for gbo.

Emission coefficient parameters

nf=1

Forward emission coefficient.

nr=1

Reverse emission coefficient.

ne=1.5

B-E leakage emission coefficient.

nc=2

B-C leakage emission coefficient.

ns=1

Substrate junction emission coefficient.

Current gain parameters

bf=100 A/A

Forward current gain (beta).

bfm (A/A)

Forward current gain (beta).

br=1 A/A

Reverse current gain (beta).

brm (A/A)

Reverse current gain (beta).

ikf= A

High current corner for forward beta (*area).

ik= A

High current corner for forward beta (*area).

jbf= A

High current corner for forward beta (*area).

ikr= A

High current corner for reverse beta (*area).

jbr (A)

High current corner for reverse beta (*area).

Early voltage parameters

vaf= V

Forward Early voltage.

va= V

Forward Early voltage.

var= V

Reverse Early voltage.

vb= V

Reverse Early voltage.

ke=0 1/V

B-E space-charge integral multiplier.

kc=0 1/V

B-C space-charge integral multiplier.

Parasitic resistance parameters

rb=0

Zero-bias base resistance (/area).

rbm=rb

Minimum base resistance for high currents (/area).

irb= A

Current at base resistance midpoint (*area).

jrb (A)

Current at base resistance midpoint (*area).

iob (A)

Current at base resistance midpoint (*area).

rbmod=spice

Nonlinear Rb model. Possible values are spectre and spice.

rc=0

Collector resistance (/area).

rcv=0

Variable collector resistance (/area). It works only when its value is specified.

rcm=0

Minimum collector resistance (/area).

dope=1e15 cm-3

Collector background doping concentration.

cex=1

Current crowding exponent.

cco=1 A

Current crowding normalization constant (*area).

re=0

Emitter resistance (/area).

minr=0.1

Minimum parasitic resistance.

Junction capacitance parameters

dcap=2

Depletion capacitance model selector.

cje=0 F

B-E zero-bias junction capacitance (*area).

vje=0.75 V

B-E built-in junction potential.

mje=1/3

B-E junction exponent.

pe=0.75 V

B-E built-in junction potential.

me=1/3

B-E junction exponent.

cjc=0 F

B-C zero-bias junction capacitance (*area).

vjc=0.75 V

B-C built-in junction potential.

mjc=1/3

B-C junction exponent.

pc=0.75 V

B-C built-in junction potential.

mc=1/3

B-C junction exponent.

xcjc=1

Fraction(xcjc) of B-C capacitance tied to internal base and internal collector. (1-xcjc)*(B-C capacitance) tied to external base and internal collector.

xcjc2=1

Fraction(xcjc2) of B-C capacitance tied to external base and external collector. (1-xcjc2)*(B-C capacitance) tied to external base and external collector.

cjs=0 F

B-S zero-bias junction capacitance (*area).

ccs=0 F

B-S zero-bias junction capacitance (*area).

csub (F)

B-S zero-bias junction capacitance (*area).

vjs=0.75 V

B-S built-in junction potential.

mjs=0

B-S junction exponent.

ps=0.75 V

B-S built-in junction potential.

psub (V)

B-S built-in junction potential.

ms=0

B-S junction exponent.

esub

B-S junction exponent.

fc=0.5

Junction capacitor forward-bias threshold.

cbcp=0 F

B-C parasitic capacitance.

cbep=0 F

B-E parasitic capacitance.

ccsp=0 F

C-S parasitic capacitance.

Transit time and excess phase parameters

tf=0 s

Ideal forward transit time.

td=0 s

Intrinsic base delay time.

xtf=0

Coefficient for bias dependence of tf.

vtf= V

Voltage describing Vbc dependence of tf.

itf=0 A

High current parameter for effect on tf (*area).

jtf (A)

High current parameter for effect on tf (*area).

tr=0 s

Ideal reverse transit time.

ptf=0 °

Excess phase at freq = 1.0/(tf*2 pi) Hz.

Temperature effects parameters

tnom (C)

Measurement temperature for the parameter. The default value is set by using the options statement.

tref (C)

TNOMs alias.

trise=0 C

Temperature rise from ambient.

eg=1.11 V

Band-gap voltage.

xtb=0

Beta temperature exponent.

xti=3

Temperature exponent for effect on is.

pt

Temperature exponent for effect on is. It is an alias of xti.

trb1=0 1/C

Linear temperature coefficient for the base resistor.

trb2=0 C-2

Quadratic temperature coefficient for the base resistor.

trm1=0 1/C

Linear temperature coefficient for the minimum base resistor.

trm2=0 C-2

Quadratic temperature coefficient for the minimum base resistor.

trc1=0 1/C

Linear temperature coefficient for the collector resistor.

trc2=0 C-2

Quadratic temperature coefficient for the collector resistor.

tre1=0 1/C

Linear temperature coefficient for the emitter resistor.

tre2=0 C-2

Quadratic temperature coefficient for the emitter resistor.

tlev=0

DC temperature selector.

tlevc=0

AC temperature selector.

eglev=0

DC temperature selector.

gap1=7.02e-4 V/C

Band-gap temperature coefficient.

gap2=1108 C

Band-gap temperature offset.

tikf1=0 1/C

Linear temperature coefficient for ikf.

tikf2=0 C-2

Quadratic temperature coefficient for ikf.

tikr1=0 1/C

Linear temperature coefficient for ikr.

tikr2=0 C-2

Quadratic temperature coefficient for ikr.

tirb1=0 1/C

Linear temperature coefficient for irb.

tirb2=0 C-2

Quadratic temperature coefficient for irb.

tis1=0 1/C

Linear temperature coefficient for is.

tis2=0 C-2

Quadratic temperature coefficient for is.

tise1=0 1/C

Linear temperature coefficient for ise.

tise2=0 C-2

Quadratic temperature coefficient for ise.

tisc1=0 1/C

Linear temperature coefficient for isc.

tisc2=0 C-2

Quadratic temperature coefficient for isc.

tiss1=0 1/C

Linear temperature coefficient for iss.

tiss2=0 C-2

Quadratic temperature coefficient for iss.

tbf1=0 1/C

Linear temperature coefficient for bf.

tbf2=0 C-2

Quadratic temperature coefficient for bf.

tbr1=0 1/C

Linear temperature coefficient for br.

tbr2=0 C-2

Quadratic temperature coefficient for br.

tvaf1=0 1/C

Linear temperature coefficient for vaf.

tvaf2=0 C-2

Quadratic temperature coefficient for vaf.

tvar1=0 1/C

Linear temperature coefficient for var.

tvar2=0 C-2

Quadratic temperature coefficient for var.

titf1=0 1/C

Linear temperature coefficient for itf.

titf2=0 C-2

Quadratic temperature coefficient for itf.

ttf1=0 1/C

Linear temperature coefficient for tf.

ttf2=0 C-2

Quadratic temperature coefficient for tf.

ttr1=0 1/C

Linear temperature coefficient for tr.

ttr2=0 C-2

Quadratic temperature coefficient for tr.

tnf1=0 1/C

Linear temperature coefficient for nf.

tnf2=0 C-2

Quadratic temperature coefficient for nf.

tnr1=0 1/C

Linear temperature coefficient for nr.

tnr2=0 C-2

Quadratic temperature coefficient for nr.

tne1=0 1/C

Linear temperature coefficient for ne.

tne2=0 C-2

Quadratic temperature coefficient for ne.

tnc1=0 1/C

Linear temperature coefficient for nc.

tnc2=0 C-2

Quadratic temperature coefficient for nc.

tns1=0 1/C

Linear temperature coefficient for ns.

tns2=0 C-2

Quadratic temperature coefficient for ns.

tmje1=0 1/C

Linear temperature coefficient for mje.

tmje2=0 C-2

Quadratic temperature coefficient for mje.

tmjc1=0 1/C

Linear temperature coefficient for mjc.

tmjc2=0 C-2

Quadratic temperature coefficient for mjc.

tmjs1=0 1/C

Linear temperature coefficient for mjs.

tmjs2=0 C-2

Quadratic temperature coefficient for mjs.

cte=0 1/C

Temperature coefficient for cje.

ctc=0 1/C

Temperature coefficient for cjc.

cts=0 1/C

Temperature coefficient for cjs.

tvje=0 V/C

Temperature coefficient for vje.

tvjc=0 V/C

Temperature coefficient for vjc.

tvjs=0 V/C

Temperature coefficient for vjs.

tvtf1=0 1/C

Linear temperature coefficient for vtf.

tvtf2=0 C-2

Quadratic temperature coefficient for vtf.

txtf1=0 1/C

Linear temperature coefficient for xtf.

txtf2=0 C-2

Quadratic temperature coefficient for xtf.

Junction diode model control parameters

dskip=yes

Skip junction calculations if they are reverse-saturated. Possible values are yes and no.

imelt=imax A

Junction explosion current (*area).

Operating region warning control parameters

bvbe= V

B-E breakdown voltage.

bvbc= V

B-C breakdown voltage.

bvce= V

C-E breakdown voltage.

bvsub= V

Substrate junction breakdown voltage.

vbefwd=0.2 V

B-E forward voltage.

vbcfwd=0.2 V

B-C forward voltage.

vsubfwd=0.2 V

Substrate junction forward voltage.

imax=1e3 A

Maximum allowable base current (*area).

imax1=imax A

Maximum allowable collector current (*area).

alarm=none

Forbidden operating region. Possible values are none, off, fwd, rev,  and sat.

Noise model parameters

kf=0

Flicker (1/f) noise coefficient.

af=1

Flicker (1/f) noise exponent.

kb=0

Burst noise coefficient.

bnoisefc=1

Burst noise cutoff frequency.

rbnoi=rb

Effective base noise resistance.

DC-mismatch model parameters

mvt0=0.0 V

Threshold mismatch intercept.

Compatibility model parameters

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. This option does not affect input syntax. Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice, and mica.

updatelevel=0

Model update selector. The available versions are 0, 1.

Shrink Parameters

Safe Operating Areas Parameters

vbe_max= V

Maximum allowed voltage across base and emitter.

vbc_max= V

Maximum allowed voltage across base and collector.

vce_max= V

Maximum allowed voltage across collector and emitter.

vcs_max= V

Maximum allowed voltage across collector and substrate.

Auto Model Selector parameters

areamax=0

Maximum transistor area factor for which the model is valid.

areamin=1

Minimum transistor area factor for which the model is valid.

imax and imelt

Theimax parameter aids convergence and prevents numerical overflow. The junction characteristics of the device are accurately modeled for current up to `imax'. If `imax' is exceeded during iterations, the linear model is substituted until the current drops below 'imax' or until convergence is achieved. If convergence is achieved with the current exceeding `imax', the results are inaccurate, and a warning is printed out.

A separate model parameter, `imelt', is used as a limit warning for the junction current. This parameter can be set to the maximum current rating of the device. When any component of the junction current exceeds `imelt', the base and collector currents are composed of many exponential terms, a warning will be issued and the results become inaccurate. The junction current is linearized above the value of `imelt' to prevent arithmetic exception, with the exponential term replaced by a linear equation at `imelt'.

Output Parameters

ibeeff (Ohm)

The effective reverse saturation current of BE.

ibceff (Ohm)

The effective reverse saturation current of BC.

iseeff (Ohm)

The effective leakage saturation current of BE.

isceff (Ohm)

The effective leakage saturation current of BC.

isseff (Ohm)

The effective reverse saturation current of bulk-collector or bulk-base.

Operating Point Parameters

type=npn

Transistor type. Possible values are npn and pnp.

struct=vertical

Transistor structure. For pnp, default is lateral. Possible values are vertical and lateral.

trise (C)

Temperature rise from ambient.

region=fwd

Estimated operating region. Spectre generates output number (0-4) in a rawfile. Possible values are off, fwd, rev, sat, and breakdown.

vbe (V)

Base-emitter voltage (alias=lx0).

vbc (V)

Base-collector voltage (alias=lx1).

vce (V)

Collector-emitter voltage.

vsub (V)

Substrate junction voltage (alias=lx24).

ic (A)

Resistive collector current (alias=lx2).

ib (A)

Resistive base current (alias=lx3).

isub (A)

Resistive substrate current (alias=lv6).

pwr (W)

Power dissipation.

betadc (A/A)

Ratio of resistive collector current to resistive base current (alias=lv10).

betaac (A/A)

Small-signal common-emitter current gain.

gm (S)

Common-emitter transconductance (alias=lx6).

rpi ()

Common-emitter input resistance.

ro ()

Common-emitter output resistance.

rb ()

Parasitic base resistance.

rc ()

Parasitic collector resistance.

cpi (F)

Common-emitter input capacitance (alias=lx19).

cmu (F)

Common-base output capacitance (alias=lx20).

cmux (F)

External common-base output capacitance (alias=lx22).

csub (F)

Substrate capacitance (alias=lx21).

ft (Hz)

Unity small-signal current-gain frequency (alias=lv5).

gpi (S)

Gpi=ib/vbe constant vbc (alias=lx4).

gmu (S)

Gmu=ib/vbc constant vbe (alias=lx5).

g0 (S)

G0=ic/vce constant vbe (alias=lx7).

gb (S)

1/Rbeff internal conductance (alias=lx16).

qbe

Base emitter charge (alias=lx8).

qbc

Base collector charge (alias=lx10).

qsc

Collector substrate charge.

grc (S)

Collector conductance (alias=lv16).

rbb ()

Base resistance (alias=lv14).

log_ic (A)

Log(Ic) (alias=lv8).

log_ib (A

Log(Ib) (alias=lv9).

gre (S)

Emitter conductance (alias=lv15).

re ()

Related Topics

Excess Phase

Temperature Effect

Noise Model

BJT Model (bjt)


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