dt=0.0 K

Temperature change for particular transistor.

dtemp=0.0

Alias for dt.

trise=0.0

Alias for dt.

m=1

Instance parameter Mfactor.

exp_cr=80

Instance parameter exp_cr for limitexp.

isnoisy=yes

Should device generate noise. Possible values are yes and no.

self_heating=yes

Control switch for self-heating. The value fast is Cadence's proprietary approach, which is significantly faster than full self-heating and generates similar results in most cases. Possible values are no, yes and fast.

is=1.0e-16 A

(Modified) saturation current.

it_mod=0

Flag for using third order solution for transfer current.

flitm=0

Flag for using third order solution for transfer current.

mcf=1.00

Non-ideality coefficient of forward collector current.

mcr=1.00

Non-ideality coefficient of reverse collector current.

vef=1.0e6 V

Forward Early voltage (normalization volt.).

ver=1.0e6 V

Reverse Early voltage (normalization volt.).

aver=0.0

Bias dependence for reverse Early voltage.

iqf=1.0e6 A

Forward d.c. high-injection toll-off current.

fiqf=0

Flag for turning on base related critical current.

iqr=1.0e6 A

Inverse d.c. high-injection roll-off current.

iqfh=1.0e6 A

High-injection correction current.

tfh=0.0

High-injection correction factor.

ahq=0

Smoothing factor for the d.c. injection width.

rver=2.0

Smoothing parameter for VBE at high voltage.

bes=1e-18 A

BE saturation current.

mbe=1.0

BE non-ideality factor.

ires=0.0 A

BE recombination saturation current.

mre=2.0

BE recombination non-ideality factor.

ibcs=0.0 A

BC saturation current.

mbc=1.0

BC non-ideality factor.

favl=0.0

Avalanche current factor.

qavl=0.0

Exponent factor for avalanche current.

cje0=1.0e-20 F

Zero-bias BE depletion capacitance.

vde=0.9 V

BE built-in voltage.

ze=0.5

BE exponent factor.

aje=2.5

Ratio of maximum to zero-bias value.

vdedc=0.9 V

BE charge built-in voltage for d.c. transfer current.

zedc=0.5

BE charge exponent factor for d.c. transfer current.

ajedc=2.5

BE capacitance ratio. The ratio can be maximum to zero-bias value d.c. transfer current.

t0=0.0 s

Low current transit time at Vbici=0.

dt0h=0.0

Base width modulation contribution.

tbvl=0.0 s

SCR width modulation contribution.

tef0=0.0 s

Storage time in neutral emitter.

gte=1.0

Exponent factor for emitter transit time.

thcs=0.0 s

Saturation time at high current densities.

ahc=0.1

Smoothing factor for current dependence.

tr=0.0 s

Storage time at inverse operation.

rci0=150 Ω

Low-field collector resistance under emitter.

vlim=0.5 V

Voltage dividing ohmic and saturation region.

vpt=100 V

Punch-through voltage.

vdci=0.7 V

BC built-in voltage.

vdck=0.0

Build-In B-C voltage including voltage drop in B and epi-b.l..

aick=1e-3

Smoothing term for ICK.

delck=2.0

Fitting factor for critical current.

cjci0=1.0e-20 F

Total zero-bias BC depletion capacitance.

vdci=0.7 V

BC built-in voltage.

zci=0.333

BC exponent factor.

vptci=100 V

Punch-through voltage of BC junction.

cjcx0=1.0e-20 F

Zero-bias external BC depletion capacitance.

vdcx=0.7 V

External BC built-in voltage.

zcx=0.333

External BC exponent factor.

vptcx=100 V

Punch-through voltage.

fbc=1.0

Split factor = Cjci0/Cjc0.

rbi0=0.0 Ω

Internal base resistance at zero-bias.

vr0e=2.5 V

Forward early voltage (normalization voltage).

vr0c=1.0e6 V

Forward early voltage (normalization voltage).

fgeo=0.656

Geometry factor.

rbx=0.0 Ω

External base series resistance.

rcx=0.0 Ω

Emitter series resistance.

re=0.0 Ω

External collector series resistance.

itss=0.0 A

Substrate transistor transfer saturation current.

msf=1.0

Substrate transistor transfer current non-ideality factor.

iscs=0.0 A

SC saturation current.

msc=1.0

SC non-ideality factor.

cjs0=1.0e-20 F

Zero-bias SC depletion capacitance.

vds=0.3 V

SC built-in voltage.

zs=0.3

External SC exponent factor.

vpts=100 V

SC punch-through voltage.

cbcpar=0.0 F

Collector-base isolation (overlap) capacitance.

cbepar=0.0 F

Emitter-base oxide capacitance.

eavl=0.0

Exponent factor.

kavl=0.0

Prefactor.

kf=0.0 M^(1-AF)

Flicker noise coefficient.

af=2.0

Flicker noise exponent factor.

alqf=0.167

Factor for additional delay time of minority charge.

alit=0.333

Factor for additional delay time of transfer current.

flnqs=0

Flag for turning on and off of vertical NQS effect.

vgb=1.2 V

Bandgap-voltage.

vge=1.17 V

Effective emitter bandgap-voltage.

vgc=1.17 V

Effective collector bandgap-voltage.

vgs=1.17 V

Effective substrate bandgap-voltage.

f1vg=(-1.02377e-4) V/K

Coefficient K1 in T-dependent bandgap equation.

f2vg=4.3215e-4 V/K

Coefficient K2 in T-dependent bandgap equation.

alt0=0.0 1/K

First-order TC of tf0.

kt0=0.0 1/K²

Second-order TC of tf0.

zetact=3.0

Exponent coefficient in transfer current temperature dependence.

zetabet=3.5

Exponent coefficient in BE junction current temperature dependence.

zetaci=0.0

TC of epi-collector diffusivity.

alvs=0.0 1/K

Relative TC of saturation drift velocity.

alces=0.0 1/K

Relative TC of vces.

zetarbi=0.0

TC of internal base resistance.

zetarbx=0.0

TC of external base resistance.

zetarcx=0.0

TC of external collector resistance.

zetare=0.0

TC of emitter resistances.

zetaiqf=0.0

TC of iqf.

alkav=0.0 1/K

TC of avalanche prefactor.

aleav=0.0 1/K

TC of avalanche exponential factor.

zetarth=0.0

Exponent factor for temperature dependent thermal resistance.

tef_temp=1

Flag for turning temperature dependence of tef0 on and off.

zetaver=(-1.0)

TC of Reverse Early voltage.

zetavgbe=1.0

TC of AVER.

dvgbe=0.0

Bandgap difference between base and BE-junction.

aliqfh=0 1/K

First-order TC of iqfh.

kiqfh=0 1/K²

Second-order TC of iqfh.

alfav=0.0

Relative TC for FAVL.

alqav=0.0

Relative TC for QAVL.

aldck=0.0

Relative TC of VDCK.

flteft=1

Flag for turning temperature dependence of tef0 on and off.

flsh=0

Flag for self-heating calculation.

rth=0.0 K/W

Thermal resistance.

cth=0.0 Ws/K

Thermal capacitance.

pnp=0

Model type flag for pnp.

npn=1

Model type flag for npn.

alrth=0.0

First order relative TC of parameter Rth.

type=1

Transistor type. 1 for NPN and -1 for PNP. This parameter is available starting with version 1.32.

tnom=27 C

Temperature for which parameters are valid.

version=1.2

The available versions are 1.0, 1.11, 1.12, 1.2, 1.3, 1.31, 1.32 and 2.00.

meff

Effective multiplicity factor (m-factor).

qjci (C)

B-C internal junction charge.

qjei (C)

B-E internal junction charge.

cjei (F)

B-E internal junction capacitance.

it (A)

Transfer Current.

ijbc (A)

Base-collector diode current.

iavl (A)

Avalanche current.

ijsc (A)

Substrate-collector diode current.

ieei (A)

Current through external to internal emitter node.

icci (A)

Current through external to internal collector node.

ibbi (A)

Current through external to internal base node.

ibici (A)

Base-collector diode current minus the avalanche current.

ijbe (A)

Base-emitter diode current.

vef (V)

Effective forward Early-voltage.

ver (V)

Effective inverse Early-voltage.

tempeff (C)

Effective temperature for a single device.

ib

Base terminal current.

ic

Collector terminal current.

is

Substrate current.

vbe

External BE voltage.

vbc

External BC voltage.

vce

External CE voltage.

vsc

External SC voltage.

betadc

Common emitter forward current gain.

gmi

Internal transconductance.

rpii

Internal input resistance.

rmui

Internal feedback resistance.

roi

Internal Output resistance.

cpii

Total BE capacitance.

cmui

Total internal BC capacitance.

cbcx

Total external BC capacitance.

ccs

CS junction capacitance.

rbi

Internal base resistance.

rb

Total base resistance.

rcx

External (saturated) collector series resistance.

re

Emitter series resistance.

betaac

Small signal current gain.

tf

Total forward transit time.

ft

Transit frequency.

pwr (W)

Power dissipation.