Model Equations
Calculation of Internal Parameters (including Temperature Scaling)
Calculation of Transistor Temperature
Calculation of Local Process Parameters
Calculation of Polysilicon Depletion Parameter
Calculation of Quantum-Mechanical Correction Parameters
Calculation of Local Process Parameters in Gate Overlap Regions
Calculation of Lateral Gradient Factor Parameters
Calculation of Mobility Parameters
Calculation of Series Resistance Parameters
Calculation of Velocity Saturation Parameter
Calculation of Impact-Ionization Parameter
Calculation of Gate Current Parameters
Calculation of Gate–Induced Drain Leakage Parameters
Calculation of Noise Parameter
Calculation of Additional Internal Parameters
Conditioning of Terminal Voltages
Bias-Dependent Body Factor
Lateral Gradient Factor
Surface Potential at Source Side and Related Variables
The values of Es, Ds, and Ps are calculated only for xg>0.
Drain Saturation Voltage
All the equations in this sections have been calculated for xg>0.
Surface Potential at Drain Side and Related Variables
Mid-Point Surface Potential and Related Variables
Polysilicon Depletion
The equations in this section are only calculated for kP > 0 and xg > 0 (otherwise ηp = 1).
Potential Mid-Point Inversion Charge and Related Variables
The equations in this section are only calculated for xg > 0.
Series Resistance
Mobility Reduction
Drain-Source Channel Current
Channel Length Modulation
Velocity Saturation
Drain-Source Channel Current
Variables for Calculation of Intrinsic Charges and Gate Current
The equations in this section are calculated only for xg > 0.
Impact Ionization or Weak-Avalanche
The equations in this section are calculated when SWIMPACT = 1 and only for xg > 0.
Surface Potential in Gate Overlap Regions
Gate Current
The equations in this section are calculated when SWIGATE = 1.
Source/Drain Gate Overlap Current
The gate tunneling currents in both gate/source and gate/drain overlap are given by:
Gate-Channel Current
Gate-Induced Drain/Source Leakage Current
The equations in this section are calculated when SWGIDL = 1.
Total Terminal Currents
Quantum-Mechanical Corrections
Intrinsic Charge Model
Extrinsic Charge Model
The charges of the source and drain overlap regions
The charge of the bulk overlap region
Inner fringe charge correction
Total Terminal Charges
Noise Model
The equations in this section are only calculated for xg > 0. In these equations fop represents the operation frequency of the transistor and j = -11/2.
Gate Current Shot Noise
Avalanche Current Shot Noise
Related Topics
Geometrical Scaling and Stress Model for Intrinsic MOSFET
Non-Quasi-Static (NQS) RF Model
Component Statements for PSP102 Models
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