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Three-Terminal Nonlinear (Diffused and Poly-Silicon) Resistor Model and JFET Model (r3)

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The r3 model is a nonlinear 3-terminal resistor model that includes self-heating, velocity saturation, statistical variations, and parasitic capacitances and currents. The core depletion pinching model formulation is for p-n junctions of diffused resistors, but is also applicable for the MOS behavior of polysilicon resistors. As p-n junction depletion pinching controls JFET device behavior, the r3 model is also applicable to JFETs.

This chapter covers the following information about the r3 model:

• Usage
• Bias Dependence of Resistor Body Current
• Bias Dependence of Parasitics
• Geometry Dependence
• Temperature Dependence
• Noise
• Operating Point Information
• Statistical Variation
• Notes on Parameter Extraction
• Reference
  • Component Statements