Product Documentation
Spectre Circuit Simulator Components and Device Models Reference
Product Version 23.1, June 2023

Component Statements

This device is supported within altergroups.

Instance Parameters

w

(m)

Channel width(alias=lv2).

l

(m)

Channel length(alias=lv1).

nf

1.0

Number of fingers.

as

(m2)

Area of source diffusion(alias=lv4).

ad

(m2)

Area of drain diffusion(alias=lv3).

ps

(m)

Perimeter of source diffusion(alias=lv12).

pd

(m)

Perimeter of drain diffusion(alias=lv11).

nrd

(m/m)

Number of squares of drain diffusion.

nrs

(m/m)

Number of squares of source diffusion.

nrb

(m/m)

Number of body squares.

nbc

0 m/m

Number of body contact isolation edge.

nseg

1 m/m

Number of segments for channel width partitioning.

pdbcp

0 m

Perimeter length for body contact parasitic at drain.

psbcp

0 m

Perimeter length for body contact parasitic at source.

agbcp

0 m2

Gate to body overlap area for body contact parasitic.

aebcp

0 m2

Substrate to body overlap area for body contact parasitic.

m

1

Multiplicity factor (number of MOSFETs in parallel).

soimod

0

SOI model selector. SoiMod=0:PD module. SoiMod=1: DD module. SoiMod=2: FD module.

rgatemod

Rgate flag (available from Version 3.1).

rbodymod

Body R model selector.

tnodeout

Temperature node flag associated with T node(Given or NOT Given).

isnoisy

yes

Should device generate noise.Possible values are no and yes.

region

triode

Estimated operating region.Possible values are off, triode, sat and subth.

rth0

((m C)/w)

Thermal resistance.

cth0

(w s/(m C))

Thermal capacitance.

bjtoff

0

BJT off flag.

vbsusr

0 V

Optional initial value of Vbs for transient.

frbody

1

Layout dependent body-resistance coefficient.

sa

0 m

Distance between OD edge and poly from one side.

sb

0 m

Distance between OD edge and poly from the other side.

sd

0 m

Distance between neighbor fingers.

rbdb

()

Body resistance.

rbsb

()

Body resistance.

agbcpd

agbcp m2

Gate to body overlap area for bc parasitics in DC.

agbcp2

0 m2

Parasitic gate to body overlap area for bc parasitics.

delvto

0 V

Zero bias threshold voltage variation.

trise

(C)

Temperature rise from ambient.

shmod

0

Self heating mode selector.

Note:
  1. tnodeout is a flag parameter of instance. If it is specified and the instance has more than 4 terminals, then the last terminal is interpreted as temperature node. tnodeout=1 indicates that tnodeout is specified in instance statement and it will treat the last terminal as temperature terminal.
  2. region can set the initial device work state for simulator, a correct region value can help simulator converge faster but will not effect the final result.

Model Parameters

Device type parameters

type

n

Transistor type.Possible values are n and p.

version

3.0

Model parameter "version" only accepts a real number value, like 2.23 for version=2.2.3. The available versions are 2.23(2.2.3), 3.0, 3.11(3.1.1), 3.2, 4.0, 4.1, 4.2, 4.3, 4.31(4.3.1), 4.4, 4.5, 4.6 and 4.6.1..

binunit

1

Bin parameter unit selector. 1 for microns and 2 for meters.

cdnver

1

Cadence version selector.

soimod

0

SOI model selector. SoiMod=0: PD module. SoiMod=1: DD module. SoiMod=2: FD module.

mtrlmod

0

Parameter for non-silicon substrate or metal gate selector.

mobmod

1

Mobility model selector.

fdmod

0

Improved dVbi model selector.

gidlmod

0

Parameter for GIDL selector.

gatetype

h

Gate structure type selector.Possible values are h and non_h.

capmod

2

Intrinsic charge model.

vgstcvmod

0

Improved VgsteffCV selector.

igmod

0

Gate tunneling current model selector.

igbmod

0

Gate-body tunneling current model selector.

igcmod

0

Gate-channel tunneling current model selector.

iiimod

0

Parameter for Iii selector.

rbodymod

0

Body R model selector.

rdsmod

0

Bias-dependent S/D resistance model selector.

rgatemod

0

Rgate flag.

shmod

0

Self-heating selector.

tlev

0

DC temperature selector.

tlevc

0

AC temperature selector.

noimod

1

Noise model selector.

fnoimod

1

Flicker Noise model selector.

tnoimod

0

Thermal Noise model selector.

Process parameters

nsub

6e16 cm-3

Substrate doping concentration.

nch

1.7e17 cm-3

Peak channel doping concentration.

ngate

0 cm-3

Poly-gate doping concentration.

nsd

1.0e20 cm-3

S/D doping concentration.

xj

0.15e-6 m

Source/drain junction depth.

tsi

1e-7 m

Silicon film thickness.

etsi

1e-7 m

Effective Silicon-on-insulator thickness in meters.

tbox

3e-7 m

Buried oxide thickness.

tox

1e-8 m

Gate oxide thickness.

toxm

(m)

Gate oxide thickness used in extraction.

toxp

tox

Physical gate oxide thickness.

xt

1.55e-7 m

Doping depth.

rdsw

100 μm^wr

Width dependence of drain-source resistance.

prwb

0 1/V

Body-effect coefficient for Rds.

prwg

0 1/V

Gate-effect coefficient for Rds.

wr

1

Width offset for parasitic resistance.

dwg

0 m/V

Gate-bias dependence of channel width.

dwb

0 m/V

Body-bias dependence of channel width.

dwbc

0 m

Width offset for body contact isolation edge.

lint

0 m

Lateral diffusion for one side.

wint

0 m

Width reduction for one side.

ll

0 m^lln

Length dependence of delta L.

lln

1

Length exponent of delta L.

llc

0 m^lln

Length dependence of delta LC.

lwc

0 m^wln

Width dependence of delta LC.

lwlc

0 m^(lln+lwn)

Area dependence of delta LC.

lw

0 m^lwn

Width dependence of delta L.

lwn

1

Width exponent of delta L.

lwl

0 m^(lln+lwn)

Area dependence of delta L.

wl

0 m^wln

Length dependence of delta W.

wlc

0 m^wln

Length dependence of delta WC.

wwc

0 m^wwn

Width dependence of delta WC.

wwlc

0 m^(wwn+wln)

Area dependence of delta WC.

wln

1

Length exponent of delta W.

ww

0 m^wwn

Width dependence of delta W.

wwn

1

Width exponent of delta W.

wwl

0 m^(wwn+wln)

Area dependence of delta W.

xl

0 m

Length variation due to masking and etching.

xw

0 m

Width variation due to masking and etching.

Material model parameters

eot

100.0e-10 m

Effective SiO2 thickness.

epsrox

3.9

Dielectric constant of the gate oxide relative to vacuum.

epsrsub

11.7

Dielectric constant of substrate relative to vacuum.

ni0sub

1.45e10 cm-3

Intrinsic carrier concentration of substrate at Tnom.

bg0sub

1.16 eV

Band-gap of substrate at T=0K.

tbgasub

7.02e-4 V/K

First parameter of band-gap change due to temperature.

tbgbsub

1108.0 K

Second parameter of band-gap change due to temperature.

phig

4.05 eV

Work function of gate.

easub

4.05 eV

Electron affinity of substrate.

leffeot

1.0 μm

Effective length for extraction of EOT.

weffeot

10.0 μm

Effective width for extraction of EOT.

vddeot

1.5 V

Voltage for extraction of EOT.

tempeot

300.15 K

Temperature for extraction of EOT.

ados

1.0

Charge centroid parameter.

bdos

1.0

Charge centroid parameter.

epsrgate

11.7

Dielectric constant of gate relative to vacuum.

Threshold voltage parameters

vtho

(V)

Threshold voltage at zero body bias for long-channel devices. For enhancement-mode devices, vtho > 0 for n-channel and vth < 0 for p-channel. Default value is calculated from other model parameters.

k1

0.53 V

Body-effect coefficient.

k1w1

0 m

First body effect width dependent parameter.

k1w2

0 m

Second body effect width dependent parameter.

k2

-0.0186

Charge-sharing parameter.

k3

0

Narrow width coefficient.

k3b

0 1/V

Narrow width coefficient.

w0

2.5e-6 m

Narrow width coefficient.

lpe0

1.74e-7 m

Lateral non-uniform doping coefficient.

nlx

1.74e-7 m

Lateral non-uniform doping coefficient.

lpeb

0 m

Lateral non-uniform doping effect for body bias.

dvt0

2.2

First coefficient of short-channel effects.

dvt1

0.53

Second coefficient of short-channel effects.

dvt2

-0.032 1/V

Body-bias coefficient of short-channel effects.

dvt0w

0

First coefficient of narrow-width effects.

dvt1w

5.3e6

Second coefficient of narrow-width effects.

dvt2w

-0.032 1/V

Body-bias coefficient of narrow-width effects.

vbx

0 V

Threshold voltage transition body voltage.

vbm

-3 V

Maximum applied body voltage.

vfb

-1.0 V

Flat Band Voltage.

a0

1

Non-uniform depletion width effect coefficient.

b0

0 m

Bulk charge coefficient due to narrow width effect.

b1

0 m

Bulk charge coefficient due to narrow width effect.

a1

0

Non-saturation coefficient.

a2

1

Non-saturation coefficient.

ags

0 1/V

Gate-bias dependence of abulk.

keta

-0.6 1/V

Body-bias coefficient for non-uniform depletion width effect.

ketas

0 V

Surface potential adjustment for bulk charge effect.

dvtp0

0 m

First parameter for Vth shift due to pocket.

dvtp1

0 1/V

Second parameter for Vth shift due to pocket.

dvtp2

0

Third parameter for Vth shift due to pocket.

dvtp3

0

Fourth parameter for Vth shift due to pocket.

dvtp4

0

Fifth parameter for Vth shift due to pocket.

minv

0

Parameter for moderate inversion in Vgsteff.

pdits

1e-20 1/V

Coefficient for drain-induced Vth shifts.

pditsl

0 1/m

Length dependence of drain-induced Vth shifts.

pditsd

0 1/V

Vds dependence of drain-induced Vth shifts.

gamma1

0 V

Body-effect coefficient near the surface.

gamma2

0 V

Body-effect coefficient in the bulk.

Mobility parameters

u0

670 cm2/V s

Low-field surface mobility at tnom. Default is 250 for PMOS.

vsat

8e4 m/s

Carrier saturation velocity at tnom.

ua

2.25e-9 m/V

First-order mobility reduction coefficient.

ub

5.87e-19 m2/V2

Second-order mobility reduction coefficient.

uc

-4.65e-11 m/V2

Body-bias dependence of mobility. Default is -0.046 and unit is 1/V for mobmod=3.

ud

0 /m2

Coulomb scattering factor of mobility.

eu

1.67

Mobility exponent.

ucs

1.67

Mobility exponent.

Subthreshold parameters

cdsc

2.4e-4 F/m2

Source/drain and channel coupling capacitance.

cdscb

0 F/m2 V

Body-bias dependence of cdsc.

cdscd

0 F/m2 V

Drain-bias dependence of cdsc.

nfactor

1

Subthreshold swing coefficient.

cit

0 F/m2

Interface trap parameter for subthreshold swing.

voff

-0.08 V

Threshold voltage offset.

noff

1.0 1/V

C-V turn-on/off parameter.

dsub

drout

DIBL effect in subthreshold region.

eta0

0.08

DIBL coefficient subthreshold region.

etab

-0.07 1/V

Body-bias dependence of et0.

Output resistance parameters

drout

0.56

DIBL effect on output resistance coefficient.

fprout

0 V/m

Rout degradation coefficient for pocket devices.

pclm

1.3

Channel length modulation coefficient.

pdiblc1

0.39

First coefficient of drain-induced barrier lowering.

pdiblc2

8.6e-3

Second coefficient of drain-induced barrier lowering.

pdiblcb

0 1/V

Body-effect coefficient for DIBL.

pvag

0

Gate dependence of early voltage.

delta

0.01 V

Effective drain voltage smoothing parameter.

Substrate current parameters

alpha0

0 m/V

Substrate current impact ionization coefficient.

beta0

0 1/V

First Vds dependent parameter of impact ionization current.

fbjtii

0

Fraction of bipolar current affecting the impact ionization.

beta1

0

Second Vds dependent parameter of impact ionization current.

beta2

0.1 V

Third Vds dependent parameter of impact ionization current.

vdsatii0

0.9 V

Nominal drain saturation voltage at threshold for impact ionization current.

vbci

0 V

Internal B-C built-in potential.

tii

0

Temperature dependent parameter for impact ionization current.

lii

0

Channel length dependent parameter at threshold for impact ionization current.

esatii

1e7 V/m

Saturation channel electric field for impact ionization current.

sii0

0.5 1/V

First Vgs dependent parameter for impact ionization current.

sii1

0.1 1/V

Second Vgs dependent parameter for impact ionization current.

sii2

0 1/V

Third Vgs dependent parameter for impact ionization current.

siid

0 1/V

Vds dependent parameter of drain saturation voltage for impact ionization current.

ebjtii

0 1/V

Impact ionization parameter for BJT part.

cbjtii

0 1/m/V

Length scaling parameter for II BJT part.

abjtii

0

Exponent factor for avalanche current.

mbjtii

0.4

Internal B-C grading coefficient.

SOI specific parameters

ngidl

1.2 V

GIDL Vds enhancement coefficient.

egidl

1.2 V

GIDL first parameter.

agidl

0 S

GIDL constant.

bgidl

0 V/m

GIDL exponential coefficient.

cgidl

0 V3

GIDL vb parameter.

rgidl

1.0 1/V

GIDL vg parameter.

kgidl

0 1/V

GIDL vb parameter.

fgidl

0 V

GIDL vb parameter.

egisl

egidl

GISL first parameter.

agisl

agidl

GISL constant.

bgisl

bgidl

GISL exponential coefficient.

cgisl

cgidl

GISL vb parameter.

rgisl

Rgidl

GISL vg parameter.

kgisl

kgidl

GISL vb parameter.

fgisl

fgidl

GISL vb parameter.

ntun

10

Reverse tunneling non-ideality factor.

ntund

ntun

Reverse tunneling non-ideality factor.

ndioded

ndiode

Diode non-ideality factor.

nrecf0

2.0

Recombination non-ideality factor at forward bias.

nrecr0

10

Recombination non-ideality factor at reverse bias.

nrecf0d

nrecf0

Recombination non-ideality factor at forward bias.

nrecr0d

nrecr0

Recombination non-ideality factor at reverse bias.

isbjt

1e-6 A/m2

BJT saturation current.

isdif

0 A/m2

Diffusion saturation current.

isrec

1e-5 A/m2

Recombination saturation current.

istun

0 A/m2

Tunneling saturation current.

idbjt

isbjt A/m2

BJT injection saturation current.

iddif

isdif A/m2

Body to source/drain injection saturation current.

idrec

isrec A/m2

Recombination saturation current.

idtun

idtun A/m2

Tunneling saturation current.

ln

2e-6 m

Electron diffusion length.

vrec0

0 V

Voltage dependent parameter for recombination current.

vtun0

0 V

Voltage dependent parameter for tunneling current.

vrec0d

vrec0 V

Voltage dependent parameter for recombination current.

vtun0d

vtun0 V

Voltage dependent parameter for tunneling current.

nbjt

1

Power coefficient of channel length dependency for bipolar current.

lbjt0

0.20e-6 m

Reference channel length for bipolar current.

vabjt

10 V

Early voltage for bipolar current.

aely

0 V/m

Channel length dependency of early voltage for bipolar current.

ahli

0

High level injection parameter for bipolar current.

ahlid

ahli

High level injection parameter for bipolar current.

ndiode

1

Diode non-ideality factor.

vbsa

0 V

Non-ideal offset voltage.

nofffd

1.0

Smooth parameter in FD module.

vofffd

0

Smooth parameter in FD module.

k1b

1.0

First backgate body effect parameter.

k2b

0

Second backgate body effect parameter for short channel effect.

dk2b

0

Third backgate body effect parameter for short channel effect.

dvbd0

0

First short-channel effect parameter in FD module.

dvbd1

0

Second short-channel effect parameter in FD module.

moinfd

1.0e3

Gate bias dependence coefficient of surface potential.

vbs0pd

0 V

Upper bound of built-in potential lowering for PD operation.

vbs0fd

0.5 V

Lower bound of built-in potential lowering for FD operation.

Parasitic resistance parameters

rbody

0

Body resistance.

rbsh

0

Extrinsic body contact sheet resistance.

rsh

0 /sqr

Source/drain diffusion sheet resistance.

rs

0

Source resistance.

rd

0

Drain resistance.

rsc

0

Source contact resistance.

rdc

0

Drain contact resistance.

rsw

50

Source resistance per width.

rdw

50

Drain resistance per width.

rswmin

0

Source resistance per width at high Vg.

rdwmin

0

Drain resistance per width at high Vg.

rss

0 m

Scalable source resistance.

rdd

0 m

Scalable drain resistance.

rhalo

1.0e15 /sqr

Body halo sheet resistance.

frbody

1

Layout dependent body-resistance coefficient.

minr

0.1

Minimum source/drain resistance.

hdif

0 m

Length of heavily doped diffusion.

ldif

0 m

Lateral diffusion beyond the gate.

Gate tunneling parameters

ntox

1.0

Power term of gate current.

toxqm

Tox m

Effective oxide thickness considering quantum effects.

toxref

2.5e-9 m

Target oxide thickness.

ebg

1.2 V

Effective bandgap in gate current calculation.

alphagb1

0.35

First Vox dependent parameter for gate current in inversion.

betagb1

0.03

Second Vox dependent parameter for gate current in inversion.

vgb1

300

Third Vox dependent parameter for gate current in inversion.

vevb

0.075

Vaux parameter for valence-band electron tunneling.

nevb

3.0

Valence-band electron non-ideality factor.

alphagb2

0.43

First Vox dependent parameter for gate current in accumulation.

betagb2

0.05

Second Vox dependent parameter for gate current in accumulation.

vgb2

17

Third Vox dependent parameter for gate current in accumulation.

vecb

0.026

Vaux parameters for conduction-band electron tunneling.

necb

1.0

Conduction-band electron non-ideality factor.

aigc

0.43

Parameter for Igc.

bigc

0.054

Parameter for Igc.

cigc

0.075 1/V

Parameter for Igc.

aigsd

0.43

Parameter for Igs/Igd.

bigsd

0.054

Parameter for Igs/Igd.

cigsd

0.075 1/V

parameter for Igs/Igd.

nigc

1.0

Parameter for Igc slope.

pigcd

1.0

Parameter for Igc partition.

poxedge

1.0

Factor for the gate edge Tox.

dlcig

lint m

Delta Length for Ig model.

voxh

5.0 V

Limit of Vox in gate current calculation.

deltavox

0.005 V

Smoothing parameter in the Vox smoothing function.

aigbcp2

0.043

First Vgp dependent parameter for gate current in accumulation in AGBCP2 region.

bigbcp2

0.0054

Second Vgp dependent parameter for gate current in accumulation in AGBCP2 region.

cigbcp2

0.0075

Third Vgp dependent parameter for gate current in accumulation in AGBCP2 region.

Overlap capacitance parameters

cgso

0 F/m

Gate-source overlap capacitance.

cgdo

0 F/m

Gate-drain overlap capacitance.

cgeo

0 F/m

Gate-substrate overlap capacitance.

cgbo

0 F/m

Gate-bulk overlap capacitance.

cgsl

0 F/m

Gate-source overlap capacitance in LDD region.

cgdl

0 F/m

Gate-drain overlap capacitance in LDD region.

ckappa

0.6

Overlap capacitance fitting parameter.

Junction capacitance model parameters

cjswg

1e-10 F/m2

Zero-bias gate-side junction capacitance density.

mjswg

0.5

Gate-side junction grading coefficient.

pbswg

0.7 V

Gate-side junction built-in potential.

cjswgd

cjswg F/m2

Drain(gate side) sidewall junction capacitance per unit width.

mjswgd

mjswg V

Drain (gate side) sidewall junction capacitance grading coefficient.

pbswgd

pbswg V

Drain(gate side) sidewall junction capacitance built in potential.

tt

1e-12 s

Transit time.

ndif

-1

Power coefficient of channel length dependency for diffusion capacitance.

ldif0

1

Power coefficient of channel length dependency for diffusion capacitance.

asd

0.3

Source/Drain diffusion smoothing parameter.

vsdfb

(F/m)

Source/Drain diffusion flatband voltage.

vsdth

Source/Drain diffusion threshold voltage.

csdmin

(F)

Source/Drain diffusion bottom minimum capacitance.

csdesw

0 F/m

Source/drain sidewall fringing constant.

Charge model selection parameters

cf

0 F/m

Fringe capacitance parameter.

cfrcoeff

1.0

Sidewall fringe capacitance parameter.

clc

1e-8 m

Intrinsic capacitance fitting parameter.

cle

0

Intrinsic capacitance fitting parameter.

dlc

lint m

Delta L for capacitance model.

dlcb

0 m

Length offset fitting parameter for body charge.

dlbg

0 m

Length offset fitting parameter for backgate charge.

dwc

wint m

Delta W for capacitance model.

delvt

0 V

Threshold voltage adjustment for C-V.

fbody

1.0

Scaling factor for body charge.

voffcv

-0.08 V

CV Threshold voltage offset.

minvcv

0

Parameter for moderate inversion in VgsteffCV.

dtoxcv

0 m

Delta oxide thickness in Capmod3.

kb1

1

Scaling factor for backgate charge.

kb3

1

Backgate coupling coefficient at subthreshold.

xpart

0

Drain/source channel charge partition in saturation for BSIM charge model. Use 0.0 for 40/60, 0.5 for 50/50, or 1.0 for 0/100.

vsce

0 V

SCE parameter for improved dVbi model.

cdsbs

0 F/m2

Coupling from Vd to Vbs for improved dVbi model.

RF model parameters

rshg

0.1

Gate sheet resistance.

xrcrg1

First fitting parameter for the bias-dependent Rg.

xrcrg2

Second fitting parameter for the bias-dependent Rg.

ngcon

Number of gate contacts.

xgw

Distance from gate contact center to device edge.

xgl

Variation in Ldrawn.

rbdb

50

Resistance between bNode and dbNode.

rbsb

50

Resistance between bNode and sbNode.

gbmin

1e-12 S

Minimum body conductance.

Temperature effects parameters

tnom

27.0 C

Parameters measurement temperature. The default value is set by the options statement.

trise

0 C

Temperature rise from ambient.

ids0mult

1

Variability in Drain current for misc. reasons.

ids0multmod

0

The flag for rd/rs scaling.

tmax

500 C

Maximum device temperature above ambient.

kt1

-0.11 V

Temperature coefficient for threshold voltage.

kt1l

0 V m

Temperature coefficient for threshold voltage.

kt2

0.022

Temperature coefficient for threshold voltage.

at

3.3e4 m/s

Temperature coefficient for vsat.

tcjswg

0 1/K

Temperature coefficient of Cjswg.

tpbswg

0 V/K

Temperature coefficient of Pbswg.

tcjswgd

tcjswg 1/K

Temperature coefficient of Cjswgd.

tpbswgd

tpbswg V/K

Temperature coefficient of Pbswgd.

ua1

4.31e-9 m/V

Temperature coefficient for ua.

ub1

-7.61e-18 m2/V2

Temperature coefficient for ub.

uc1

-5.5e-11 m/V2

Temperature coefficient for uc. Default is -0.056 for mobmod=3.

ucste

-4.775e-3 1/K

Temperature coefficient of UCS.

ud1

0 /m2/K

Temperature coefficient of ud.

prt

0

Temperature coefficient for Rds.

ute

-1.5

Mobility temperature exponent.

cth0

1e-5 w s/(m C)

Self-heating thermal capacitance.

rth0

0 (m C)/w

Self-heating thermal resistance.

ntrecf

0

Temperature coefficient of Nrecf.

ntrecr

0

Temperature coefficient of Nrecr.

xbjt

1

BJT current temperature exponent.

xdif

2

Diffusion current temperature exponent.

xrec

1

Recombination current temperature exponent.

xtun

0

Tunneling current temperature exponent.

xdifd

xdif

Temperature coefficient for Iddif.

xrecd

xrec

Temperature coefficient for Idrec.

xtund

xtun

Temperature coefficient for Idtun.

wth0

0 μm

Minimum width for thermal resistance calculation.

tvbci

0 V/K

Temperature coefficient for vbci.

trs

0 1/C

Temperature parameter for source resistance.

trd

0 1/C

Temperature parameter for drain resistance.

Noise model parameters

tnoia

1.5

Thermal noise parameter.

tnoib

3.5

Thermal noise parameter.

rnoia

0.577

Thermal noise coefficient.

rnoib

0.37

Thermal noise coefficient.

ntnoi

1.0

Thermal noise coefficient.

noif

1

Floating body excess noise ideality factor.

w0flk

0 m

Width constant for flicker noise equation.

bf

2.0

Flicker noise length dependence exponent.

kf

0

Flicker (1/f) noise coefficient.

af

1

Flicker (1/f) noise exponent.

ef

1

Flicker (1/f) noise frequency exponent.

noia

1e20

Oxide trap density coefficient. Default is 9.9e18 for pmos.

noib

5e4

Oxide trap density coefficient. Default is 2.4e3 for pmos.

noic

-1.4e-12

Oxide trap density coefficient. Default is 1.4e-8 for pmos.

em

4.1e7 V/m

Maximum electric field.

Stress model parameters

saref

1e-6 m

Reference distance between OD edge and poly from one side.

sbref

1e-6 m

Reference distance between OD edge and poly from the other side.

wlod

0 m

Width parameter for stress effect.

ku0

0 m

Mobility degradation/enhancement coefficient for LOD.

tku0

0

Temperature coefficient of KU0.

llodku0

0

Length parameter for u0 LOD effect.

wlodku0

0

Width parameter for u0 LOD effect.

kvth0

0 V m

Threshold degradation/enhancement parameter for LOD.

llodvth

0

Length parameter for vth LOD effect.

wlodvth

0

Width parameter for vth LOD effect.

kvsat

0 m

Saturation velocity degradation/enhancement parameter for LOD.

stk2

0 m

K2 shift factor related to stress effect on vth.

lodk2

1.0

K2 shift modification factor for stress effect.

steta0

0 m

eta0 shift factor related to stress effect on vth.

lodeta0

1.0

eta0 shift modification factor for stress effect.

Default instance parameters

w

5e-6 m

Default channel width.

l

5e-6 m

Default channel length.

as

0 m2

Default area of source diffusion.

ad

0 m2

Default area of drain diffusion.

ps

0 m

Default perimeter of source diffusion.

pd

0 m

Default perimeter of drain diffusion.

nrd

1 m/m

Default number of squares of drain diffusion.

nrs

1 m/m

Default number of squares of source diffusion.

nrb

1 m/m

Default body squares.

paramchk

1

Model parameter checking selector.

Auto Model Selector parameters

wmax

1 m

Maximum channel width for which the model is valid.

wmin

0 m

Minimum channel width for which the model is valid.

lmax

1 m

Maximum channel length for which the model is valid.

lmin

0 m

Minimum channel length for which the model is valid.

Compatibility model parameters

compatible

spectre

Causes device equations to be compatible with a foreign simulator. This option does not affect input syntax.Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice and mica.

Junction diode model parameters

dskip

yes

Use simple piece-wise linear model for diode currents below 0.1*iabstol.Possible values are no and yes.

Operating region warning control parameters

alarm

none

Forbidden operating region.Possible values are none, off, triode, sat, subth and rev.

imax

1 A

Maximum allowable current.

bvj

infinity V

Junction reverse breakdown voltage.

vbox

1e9*tox V

Oxide breakdown voltage.

warn

on

Parameter to turn warnings on and off.Possible values are off and on.

DC-mismatch dependent parameters

mismatchmod

0

Select mismatch mode.

mismatchdist

0 m

Mismatch distance.

mvtwl

0 V m

Threshold mismatch area dependence.

mvtwl2

0 V m^1.5

Threshold mismatch area square dependence.

mvt0

0 V

Threshold mismatch intercept.

mbewl

0 m

Beta mismatch area dependence.

mbe0

0

Beta mismatch intercept.

Length dependent parameters

lnch

0

Length dependence of nch.

lnsub

0

Length dependence of nsub.

lngate

0

Length dependence of ngate.

lvtho

0

Length dependence of vtho.

lk1

0

Length dependence of k1.

lk1w1

0

Length dependence of k1w1.

lk1w2

0

Length dependence of k1w2.

lk2

0

Length dependence of k2.

lk3

0

Length dependence of k3.

lk3b

0

Length dependence of k3b.

lkb1

0

Length dependence of kb1.

lw0

0

Length dependence of w0.

lnlx

0

Length dependence of nlx.

ldvt0

0

Length dependence of dvt0.

ldvt1

0

Length dependence of dvt1.

ldvt2

0

Length dependence of dvt2.

ldvt0w

0

Length dependence of dvt0w.

ldvt1w

0

Length dependence of dvt1w.

ldvt2w

0

Length dependence of dvt2w.

lu0

0

Length dependence of u0.

lua

0

Length dependence of ua.

lub

0

Length dependence of ub.

luc

0

Length dependence of uc.

lvsat

0

Length dependence of vsat.

la0

0

Length dependence of a0.

lags

0

Length dependence of ags.

lb0

0

Length dependence of b0.

lb1

0

Length dependence of b1.

lketa

0

Length dependence of keta.

lketas

0

Length dependence of ketas.

la1

0

Length dependence of a1.

la2

0

Length dependence of a2.

lrdsw

0

Length dependence of rdsw.

lprwb

0

Length dependence of prwb.

lprwg

0

Length dependence of prwg.

lwr

0

Length dependence of wr.

lnfactor

0

Length dependence of nfactor.

ldwg

0

Length dependence of dwg.

ldwb

0

Length dependence of dwb.

lvoff

0

Length dependence of voff.

leta0

0

Length dependence of eta0.

letab

0

Length dependence of etab.

ldsub

0

Length dependence of dsub.

lcit

0

Length dependence of cit.

lcdsc

0

Length dependence of cdsc.

lcdscb

0

Length dependence of cdscb.

lcdscd

0

Length dependence of cdscd.

lpclm

0

Length dependence of pclm.

lpdiblc1

0

Length dependence of pdiblc1.

lpdiblc2

0

Length dependence of pdiblc2.

lpdiblcb

0

Length dependence of pdiblcb.

ldrout

0

Length dependence of drout.

lpvag

0

Length dependence of pvag.

ldelta

0

Length dependence of delta.

lalpha0

0

Length dependence of alpha0.

lfbjtii

0

Length dependence of fbjtii.

lbeta0

0

Length dependence of beta0.

lbeta1

0

Length dependence of beta1.

lbeta2

0

Length dependence of beta2.

lvdsatii0

0

Length dependence of vdstaii0.

llii

0

Length dependence of lii.

lesatii

0

Length dependence of esatii.

lsii0

0

Length dependence of sii0.

lsii1

0

Length dependence of sii1.

lsii2

0

Length dependence of sii2.

lsiid

0

Length dependence of siid.

lagidl

0

Length dependence of agidl.

lbgidl

0

Length dependence of bgidl.

lngidl

0

Length dependence of ngidl.

lntun

0

Length dependence of ntun.

lndiode

0

Length dependence of ndoide.

lnrecf0

0

Length dependence of nrecf0.

lnrecr0

0

Length dependence of nrecr0.

lisbjt

0

Length dependence of isbjt.

lisdif

0

Length dependence of isdif.

lisrec

0

Length dependence of isrec.

listun

0

Length dependence of istun.

lvrec0

0

Length dependence of vrec0.

lvtun0

0

Length dependence of vtun0.

lnbjt

0

Length dependence of nbjt.

llbjt0

0

Length dependence of lbjt0.

lvabjt

0

Length dependence of vabjt.

laely

0

Length dependence of aely.

lahli

0

Length dependence of ahli.

lxrcrg1

0

Length dependence of xrcrg1.

lxrcrg2

0

Length dependence of xrcrg2.

lvsdfb

0

Length dependence of vsdfb.

lvsdth

0

Length dependence of vsdth.

ldelvt

0

Length dependence of delvt.

lacde

0

Length dependence of acde.

lmoin

0

Length dependence of moin.

laigc

0

Length dependence of aigc.

lbigc

0

Length dependence of bigc.

lcigc

0

Length dependence of cigc.

laigsd

0

Length dependence of aigsd.

lbigsd

0

Length dependence of bigsd.

lcigsd

0

Length dependence of cigsd.

lnigc

0

Length dependence of nigc.

lpigcd

0

Length dependence of pigcd.

lpoxedge

0

Length dependence of poxedge.

lxj

0

Length dependence of xj.

lalphagb1

0

Length dependence of alphagb1.

lalphagb2

0

Length dependence of alphagb2.

lbetagb1

0

Length dependence of betagb1.

lbetagb2

0

Length dependence of betagb2.

lcgsl

0

Length dependence of cgsl.

lcgdl

0

Length dependence of cgdl.

lckappa

0

Length dependence of ckappa.

lndif

0

Length dependence of ndif.

lute

0

Length dependence of ute.

lkt1

0

Length dependence of kt1.

lkt1l

0

Length dependence of kt1l.

lkt2

0

Length dependence of kt2.

lua1

0

Length dependence of ua1.

lub1

0

Length dependence of ub1.

luc1

0

Length dependence of uc1.

lat

0

Length dependence of at.

lprt

0

Length dependence of prt.

lntrecf

0

Length dependence of ntrecf.

lntrecr

0

Length dependence of ntrecr.

lxbjt

0

Length dependence of xbjt.

lxdif

0

Length dependence of xdif.

lxrec

0

Length dependence of xrec.

lxtun

0

Length dependence of xtun.

lxdifd

0

Length dependence of xdifd.

lxrecd

0

Length dependence of xrecd.

lxtund

0

Length dependence of xtund.

llpe0

0

Length dependence of lpe0.

llpeb

0

Length dependence of lpeb.

lrsw

0

Length dependence of Rsw.

lrdw

0

Length dependence of Rdw.

lcgidl

0

Length dependence of cgidl.

legidl

0

Length dependence of egidl.

lntund

0

Length dependence of ntund.

lndioded

0

Length dependence of ndioded.

lnrecf0d

0

Length dependence of nrecf0d.

lnrecr0d

0

Length dependence of nrecr0d.

lidbjt

0

Length dependence of idbjt.

liddif

0

Length dependence of iddif.

lidrec

0

Length dependence of idrec.

lidtun

0

Length dependence of idtun.

lvrec0d

0

Length dependence of vrec0d.

lvtun0d

0

Length dependence of vtun0d.

lahlid

0

Length dependence of lahlid.

lnoff

0

Length dependence of noff.

ldvtp0

0

Length dependence of dvtp0.

ldvtp1

0

Length dependence of dvtp1.

lminv

0

Length dependence of minv.

lfprout

0

Length dependence of pdiblcb.

lpdits

0

Length dependence of pdits.

lpditsd

0

Length dependence of pditsd.

lku0

0

Length dependence of ku0.

lkvth0

0

Length dependence of kvth0.

lvoffcv

0

Length dependence of voffcv.

lminvcv

0

Length dependence of minvcv.

lud

0

Length dependence of ud.

lud1

0

Length dependence of ud1.

lebjtii

0

Length dependence of ebjtii.

lcbjtii

0

Length dependence of cbjtii.

labjtii

0

Length dependence of abjtii.

lmbjtii

0

Length dependence of mbjtii.

lvbci

0

Length dependence of vbci.

ldvtp2

0

Length dependence of dvtp2.

ldvtp3

0

Length dependence of dvtp3.

ldvtp4

0

Length dependence of dvtp4.

laigbcp2

0

Length dependence of aigbcp2.

lbigbcp2

0

Length dependence of bigbcp2.

lcigbcp2

0

Length dependence of cigbcp2.

lnsd

0

Length dependence of nsd.

lvfb

0

Length dependence of vfb.

leu

0

Length dependence of eu.

lucs

0

Length dependence of ucs.

lucste

0

Length dependence of ucste.

legisl

0

Length dependence of egisl.

lagisl

0

Length dependence of agisl.

lbgisl

0

Length dependence of bgisl.

lcgisl

0

Length dependence of cgisl.

lrgidl

0

Length dependence of rgidl.

lkgidl

0

Length dependence of kgidl.

lfgidl

0

Length dependence of fgidl.

lrgisl

0

Length dependence of rgisl.

lkgisl

0

Length dependence of kgisl.

lfgisl

0

Length dependence of fgisl.

Width dependent parameters

wnch

0

Width dependence of nch.

wnsub

0

Width dependence of nsub.

wngate

0

Width dependence of ngate.

wvtho

0

Width dependence of vto.

wk1

0

Width dependence of k1.

wk1w1

0

Width dependence of k1w1.

wk1w2

0

Width dependence of k1w2.

wk2

0

Width dependence of k2.

wk3

0

Width dependence of k3.

wk3b

0

Width dependence of k3b.

wkb1

0

Width dependence of kb1.

ww0

0

Width dependence of w0.

wnlx

0

Width dependence of nlx.

wdvt0

0

Width dependence of dvt0.

wdvt1

0

Width dependence of dvt1.

wdvt2

0

Width dependence of dvt2.

wdvt0w

0

Width dependence of dvt0w.

wdvt1w

0

Width dependence of dvt1w.

wdvt2w

0

Width dependence of dvt2w.

wu0

0

Width dependence of u0.

wua

0

Width dependence of ua.

wub

0

Width dependence of ub.

wuc

0

Width dependence of uc.

wvsat

0

Width dependence of vsat.

wa0

0

Width dependence of a0.

wags

0

Width dependence of ags.

wb0

0

Width dependence of b0.

wb1

0

Width dependence of b1.

wketa

0

Width dependence of keta.

wketas

0

Width dependence of ketas.

wa1

0

Width dependence of a1.

wa2

0

Width dependence of a2.

wrdsw

0

Width dependence of rdsw.

wprwb

0

Width dependence of prwb.

wprwg

0

Width dependence of prwg.

wwr

0

Width dependence of wr.

wnfactor

0

Width dependence of nfactor.

wdwg

0

Width dependence of dwg.

wdwb

0

Width dependence of dwb.

wvoff

0

Width dependence of voff.

weta0

0

Width dependence of eta0.

wetab

0

Width dependence of etab.

wdsub

0

Width dependence of dsub.

wcit

0

Width dependence of cit.

wcdsc

0

Width dependence of cdsc.

wcdscb

0

Width dependence of cdscb.

wcdscd

0

Width dependence of cdscd.

wpclm

0

Width dependence of pclm.

wpdiblc1

0

Width dependence of pdiblc1.

wpdiblc2

0

Width dependence of pdiblc2.

wpdiblcb

0

Width dependence of pdiblcb.

wdrout

0

Width dependence of drout.

wpvag

0

Width dependence of pvag.

wdelta

0

Width dependence of delta.

walpha0

0

Width dependence of alpha0.

wfbjtii

0

Width dependence of fbjtii.

wbeta0

0

Width dependence of beta0.

wbeta1

0

Width dependence of beta1.

wbeta2

0

Width dependence of beta2.

wvdsatii0

0

Width dependence of vdsatii0.

wlii

0

Width dependence of lii.

wesatii

0

Width dependence of esatii.

wsii0

0

Width dependence of sii0.

wsii1

0

Width dependence of sii1.

wsii2

0

Width dependence of sii2.

wsiid

0

Width dependence of siid.

wagidl

0

Width dependence of agidl.

wbgidl

0

Width dependence of bgidl.

wngidl

0

Width dependence of ngidl.

wntun

0

Width dependence of wntun.

wndiode

0

Width dependence of ndiode.

wnrecf0

0

Width dependence of nrecf0.

wnrecr0

0

Width dependence of nrecr0.

wisbjt

0

Width dependence of isbjt.

wisdif

0

Width dependence of isdif.

wisrec

0

Width dependence of isrec.

wistun

0

Width dependence of istun.

wvrec0

0

Width dependence of vrec0.

wvtun0

0

Width dependence of vtun0.

wnbjt

0

Width dependence of nbjt.

wlbjt0

0

Width dependence of lbjt0.

wvabjt

0

Width dependence of vabjt.

waely

0

Width dependence of aely.

wahli

0

Width dependence of ahli.

wxrcrg1

0

Width dependence of xrcrg1.

wxrcrg2

0

Width dependence of xrcrg2.

wvsdfb

0

Width dependence of vsdfb.

wvsdth

0

Width dependence of vsdth.

wdelvt

0

Width dependence of delvt.

wacde

0

Width dependence of acde.

wmoin

0

Width dependence of moin.

waigc

0

Width dependence of aigc.

wbigc

0

Width dependence of bigc.

wcigc

0

Width dependence of cigc.

waigsd

0

Width dependence of aigsd.

wbigsd

0

Width dependence of bigsd.

wcigsd

0

Width dependence of cigsd.

wnigc

0

Width dependence of nigc.

wpigcd

0

Width dependence of pigcd.

wpoxedge

0

Width dependence of poxedge.

wxj

0

Width dependence of xj.

walphagb1

0

Width dependence of alphagb1.

walphagb2

0

Width dependence of alpagb2.

wbetagb1

0

Width dependence of betagb1.

wbetagb2

0

Width dependence of betabg2.

wcgsl

0

Width dependence of cgsl.

wcgdl

0

Width dependence of cgdl.

wckappa

0

Width dependence of ckappa.

wndif

0

Width dependence of ndif.

wute

0

Width dependence of ute.

wkt1

0

Width dependence of kt1.

wkt1l

0

Width dependence of kt1l.

wkt2

0

Width dependence of kt2.

wua1

0

Width dependence of ua1.

wub1

0

Width dependence of ub1.

wuc1

0

Width dependence of uc1.

wat

0

Width dependence of at.

wprt

0

Width dependence of prt.

wntrecf

0

Width dependence of ntrecf.

wntrecr

0

Width dependence of ntrecr.

wxbjt

0

Width dependence of xbjt.

wxdif

0

Width dependence of xdif.

wxrec

0

Width dependence of xrec.

wxdifd

0

Width dependence of xdifd.

wxrecd

0

Width dependence of xrecd.

wxtund

0

Width dependence of xtund.

wlpe0

0

Width dependence of lpe0.

wlpeb

0

Width dependence of lpeb.

wrsw

0

Width dependence of rsw.

wrdw

0

Width dependence of rdw.

wcgidl

0

Width dependence of Cgidl.

wegidl

0

Width dependence of Egidl.

wntund

0

Width dependence of ntund.

wndioded

0

Width dependence of ndioded.

wnrecf0d

0

Width dependence of nrecf0d.

wnrecr0d

0

Width dependence of nrecr0d.

widbjt

0

Width dependence of Idbjt.

widdif

0

Width dependence of iddif.

widrec

0

Width dependence of idrec.

widtun

0

Width dependence of idtun.

wvrec0d

0

Width dependence of Vrec0d.

wvtun0d

0

Width dependence of Vtun0d.

wahlid

0

Width dependence of Ahlid.

wxtun

0

Width dependence of xtun.

wnoff

0

Width dependence of noff.

wdvtp0

0

Width dependence of dvtp0.

wdvtp1

0

Width dependence of dvtp1.

wminv

0

width dependence of minv.

wfprout

0

Width dependence of pdiblcb.

wpdits

0

Width dependence of pdits.

wpditsd

0

Width dependence of pditsd.

wku0

0

Width dependence of ku0.

wkvth0

0

Width dependence of kvth0.

wvoffcv

0

Width dependence of voffcv.

wminvcv

0

Width dependence of minvcv.

wud

0

Width dependence of ud.

wud1

0

Width dependence of ud1.

webjtii

0

Width dependence of ebjtii.

wcbjtii

0

Width dependence of cbjtii.

wabjtii

0

Width dependence of abjtii.

wmbjtii

0

Width dependence of mbjtii.

wvbci

0

Width dependence of vbci.

wdvtp2

0

Width dependence of dvtp2.

wdvtp3

0

Width dependence of dvtp3.

wdvtp4

0

Width dependence of dvtp4.

waigbcp2

0

Width dependence of aigbcp2.

wbigbcp2

0

Width dependence of bigbcp2.

wcigbcp2

0

Width dependence of cigbcp2.

wnsd

0

Width dependence of nsd.

wvfb

0

Width dependence of vfb.

weu

0

Width dependence of eu.

wucs

0

Width dependence of ucs.

wucste

0

Width dependence of ucste.

wegisl

0

Width dependence of egisl.

wagisl

0

Width dependence of agisl.

wbgisl

0

Width dependence of bgisl.

wcgisl

0

Width dependence of cgisl.

wrgidl

0

Width dependence of rgidl.

wkgidl

0

Width dependence of kgidl.

wfgidl

0

Width dependence of fgidl.

wrgisl

0

Width dependence of rgisl.

wkgisl

0

Width dependence of kgisl.

wfgisl

0

Width dependence of fgisl.

Cross-term dependent parameters

pnch

0

Cross-term dependence of nch.

pnsub

0

Cross-term dependence of nsub.

pngate

0

Cross-term dependence of ngate.

pvtho

0

Cross-term dependence of vto.

pk1

0

Cross-term dependence of k1.

pk1w1

0

Cross-term dependence of k1w1.

pk1w2

0

Cross-term dependence of k1w2.

pk2

0

Cross-term dependence of k2.

pk3

0

Cross-term dependence of k3.

pk3b

0

Cross-term dependence of k3b.

pkb1

0

Cross-term dependence of kb1.

pw0

0

Cross-term dependence of w0.

pnlx

0

Cross-term dependence of nlx.

pdvt0

0

Cross-term dependence of dvt0.

pdvt1

0

Cross-term dependence of dvt1.

pdvt2

0

Cross-term dependence of dvt2.

pdvt0w

0

Cross-term dependence of dvt0w.

pdvt1w

0

Cross-term dependence of dvt1w.

pdvt2w

0

Cross-term dependence of dvt2w.

pu0

0

Cross-term dependence of u0.

pua

0

Cross-term dependence of ua.

pub

0

Cross-term dependence of ub.

puc

0

Cross-term dependence of uc.

pvsat

0

Cross-term dependence of vsat.

pa0

0

Cross-term dependence of a0.

pags

0

Cross-term dependence of ags.

pb0

0

Cross-term dependence of b0.

pb1

0

Cross-term dependence of b1.

pketa

0

Cross-term dependence of keta.

pketas

0

Cross-term dependence of ketas.

pa1

0

Cross-term dependence of a1.

pa2

0

Cross-term dependence of a2.

prdsw

0

Cross-term dependence of rdsw.

pprwb

0

Cross-term dependence of prwb.

pprwg

0

Cross-term dependence of prwg.

pwr

0

Cross-term dependence of wr.

pnfactor

0

Cross-term dependence of nfactor.

pdwg

0

Cross-term dependence of dwg.

pdwb

0

Cross-term dependence of dwb.

pvoff

0

Cross-term dependence of voff.

peta0

0

Cross-term dependence of eta0.

petab

0

Cross-term dependence of etab.

pdsub

0

Cross-term dependence of dsub.

pcit

0

Cross-term dependence of cit.

pcdsc

0

Cross-term dependence of cdsc.

pcdscb

0

Cross-term dependence of cdscb.

pcdscd

0

Cross-term dependence of cdscd.

ppclm

0

Cross-term dependence of pclm.

ppdiblc1

0

Cross-term dependence of pdiblc1.

ppdiblc2

0

Cross-term dependence of pdiblc2.

ppdiblcb

0

Cross-term dependence of pdiblcb.

pdrout

0

Cross-term dependence of drout.

ppvag

0

Cross-term dependence of pvag.

pdelta

0

Cross-term dependence of delta.

palpha0

0

Cross-term dependence of alpha0.

pfbjtii

0

Cross-term dependence of fbjtii.

pbeta0

0

Cross-term dependence of beta0.

pbeta1

0

Cross-term dependence of beta1.

pbeta2

0

Cross-term dependence of beta2.

pvdsatii0

0

Cross-term dependence of vdsatii0.

plii

0

Cross-term dependence of lii.

pesatii

0

Cross-term dependence of esatii.

psii0

0

Cross-term dependence of sii0.

psii1

0

Cross-term dependence of sii1.

psii2

0

Cross-term dependence of sii2.

psiid

0

Cross-term dependence of siid.

pagidl

0

Cross-term dependence of agidl.

pbgidl

0

Cross-term dependence of bgidl.

pngidl

0

Cross-term dependence of ngidl.

pntun

0

Cross-term dependence of ntun.

pndiode

0

Cross-term dependence of ndiode.

pnrecf0

0

Cross-term dependence of nrecf0.

pnrecr0

0

Cross-term dependence of nrecr0.

pisbjt

0

Cross-term dependence of isbjt.

pisdif

0

Cross-term dependence of isdif.

pisrec

0

Cross-term dependence of isrec.

pistun

0

Cross-term dependence of istun.

pvrec0

0

Cross-term dependence of vrec0.

pvtun0

0

Cross-term dependence of vtun0.

pnbjt

0

Cross-term dependence of nbjt.

plbjt0

0

Cross-term dependence of lbjt0.

pvabjt

0

Cross-term dependence of vabjt.

paely

0

Cross-term dependence of aely.

pahli

0

Cross-term dependence of ahli.

pxrcrg1

0

Cross-term dependence of xrcrg1.

pxrcrg2

0

Cross-term dependence of xrcrg2.

pvsdfb

0

Cross-term dependence of vsdfb.

pvsdth

0

Cross-term dependence of vsdth.

pdelvt

0

Cross-term dependence of delvt.

pacde

0

Cross-term dependence of acde.

pmoin

0

Cross-term dependence of moin.

paigc

0

Cross-term dependence of aigc.

pbigc

0

Cross-term dependence of bigc.

pcigc

0

Cross-term dependence of cigc.

paigsd

0

Cross-term dependence of aigsd.

pbigsd

0

Cross-term dependence of bigsd.

pcigsd

0

Cross-term dependence of cigsd.

pnigc

0

Cross-term dependence of nigc.

ppigcd

0

Cross-term dependence of pigcd.

ppoxedge

0

Cross-term dependence of poxedge.

pxj

0

Cross-term dependence of xj.

palphagb1

0

Cross-term dependence of alphagb1.

palphagb2

0

Cross-term dependence of alphagb2.

pbetagb1

0

Cross-term dependence of betagb1.

pbetagb2

0

Cross-term dependence of betagb2.

pcgsl

0

Cross-term dependence of cgsl.

pcgdl

0

Cross-term dependence of cgdl.

pckappa

0

Cross-term dependence of ckappa.

pndif

0

Cross-term dependence of ndif.

pute

0

Cross-term dependence of ute.

pkt1

0

Cross-term dependence of kt1.

pkt1l

0

Cross-term dependence of kt1l.

pkt2

0

Cross-term dependence of kt2.

pua1

0

Cross-term dependence of ua1.

pub1

0

Cross-term dependence of ub1.

puc1

0

Cross-term dependence of uc1.

pat

0

Cross-term dependence of at.

pprt

0

Cross-term dependence of prt.

pntrecf

0

Cross-term dependence of ntrecf.

pntrecr

0

Cross-term dependence of ntrecr.

pxbjt

0

Cross-term dependence of xbjt.

pxdif

0

Cross-term dependence of xdif.

pxrec

0

Cross-term dependence of xrec.

pxtun

0

Cross-term dependence of xtun.

pxdifd

0

Cross-term dependence of xdifd.

pxrecd

0

Cross-term dependence of xrecd.

pxtund

0

Cross-term dependence of xtund.

plpe0

0

Cross-term dependence of lpe0.

plpeb

0

Cross-term dependence of lpeb.

prsw

0

Cross-term dependence of rsw.

prdw

0

Cross-term dependence of rdw.

pcgidl

0

Cross-term dependence of cgidl.

pegidl

0

Cross-term dependence of egidl.

pntund

0

Cross-term dependence of ntund.

pndioded

0

Cross-term dependence of ndioded.

pnrecf0d

0

Cross-term dependence of nrecf0d.

pnrecr0d

0

Cross-term dependence of nrecr0d.

pidbjt

0

Cross-term dependence of Idbjt.

piddif

0

Cross-term dependence of Iddif.

pidrec

0

Cross-term dependence of Idrec.

pidtun

0

Cross-term dependence of idtun.

pvrec0d

0

Cross-term dependence of vrec0d.

pvtun0d

0

Cross-term dependence of vtun0d.

pahlid

0

Cross-term dependence of ahlid.

pnoff

0

Cross-term dependence of noff.

pdvtp0

0

Cross-term dependence of dvtp0.

pdvtp1

0

Cross-term dependence of dvtp1.

pminv

0

Cross-term dependence of minv.

pfprout

0

Cross-term dependence of pdiblcb.

ppdits

0

Cross-term dependence of pdits.

ppditsd

0

Cross-term dependence of pditsd.

pku0

0

Cross-term dependence of ku0.

pkvth0

0

Cross-term dependence of kvth0.

pvoffcv

0

Cross-term dependence of voffcv.

pminvcv

0

Cross-term dependence of minvcv.

pud

0

Cross-term dependence of ud.

pud1

0

Cross-term dependence of ud1.

pebjtii

0

Cross-term dependence of ebjtii.

pcbjtii

0

Cross-term dependence of cbjtii.

pabjtii

0

Cross-term dependence of abjtii.

pmbjtii

0

Cross-term dependence of mbjtii.

pvbci

0

Cross-term dependence of vbci.

pdvtp2

0

Cross-term dependence of dvtp2.

pdvtp3

0

Cross-term dependence of dvtp3.

pdvtp4

0

Cross-term dependence of dvtp4.

paigbcp2

0

Cross-term dependence of aigbcp2.

pbigbcp2

0

Cross-term dependence of bigbcp2.

pcigbcp2

0

Cross-term dependence of cigbcp2.

pnsd

0

Cross-term dependence of nsd.

pvfb

0

Cross-term dependence of vfb.

peu

0

Cross-term dependence of eu.

pucs

0

Cross-term dependence of ucs.

pucste

0

Cross-term dependence of ucste.

pegisl

0

Cross-term dependence of egisl.

pagisl

0

Cross-term dependence of agisl.

pbgisl

0

Cross-term dependence of bgisl.

pcgisl

0

Cross-term dependence of cgisl.

prgidl

0

Cross-term dependence of rgidl.

pkgidl

0

Cross-term dependence of kgidl.

pfgidl

0

Cross-term dependence of fgidl.

prgisl

0

Cross-term dependence of rgisl.

pkgisl

0

Cross-term dependence of kgisl.

pfgisl

0

Cross-term dependence of fgisl.

vthmod

Vth output selector. 'std' outputs model equation Vth. 'vthcc' outputs constant current Vth, and may impact simulation performance. The default value is taken from the options parameter 'vthmod'.Possible values are std and vthcc.

ivth

(A)

Vth current parameter. The default value is taken from the options parameter 'ivthn' or 'ivthp', depending on the type of the model.

ivthw

(m)

Width offset for constant current Vth. The default value is taken from the options parameter 'ivthw'.

ivthl

(m)

Length offset for constant current Vth. The default value is taken from the options parameter 'ivthl'.

ivth_vdsmin

(V)

Minimum Vds in constant current Vth calculating. The default value is taken from the options parameter 'ivth_vdsmin'.

gmin_compatible

spectre

Choose gmin compatibility of model, possible values are 'spectre'(default) and 'cmc'.Possible values are spectre and cmc.

eta0cv

0.08

Subthreshold region DIBL coefficient for C-V.

etabcv

(-0.07)

Subthreshold region DIBL coefficient for C-V.

steta0cv

0.0

eta0cv shift factor related to stress effect on vth.

lodeta0cv

1.0

eta0cv shift modification factor for stress effect.

leta0cv

0.0

Length dependence of eta0cv.

letabcv

0.0

Length dependence of etabcv.

weta0cv

0.0

Width dependence of eta0cv.

wetabcv

0.0

Width dependence of etabcv.

peta0cv

0.0

Cross-term dependence of eta0cv.

petabcv

0.0

Cross-term dependence of etabcv.

tnoic

3.5

Length dependent parameter for Correlation Coefficient.

rnoic

0.395

Correlation coefficient parameter.

scalen

1e5

Scale factor for correlated noise.

eggbcp2

1.12

Bandgap in Agbcp2 region.

eggdep

1.12

Bandgap for gate depletion effect.

agb1

3.7622e-7

'A' for Igb1 Tunneling current model.

bgb1

(-3.1051e10)

'B' for Igb1 tunneling current model.

agb2

4.9758e-7

'A' for Igb2 tunneling current model.

bgb2

(-2.357e10)

'B' for Igb2 tunneling current model.

agbc2n

3.4254e-7

NMOS 'A' for tunneling current model.

agbc2p

4.9723e-7

PMOS 'A' for tunneling current model.

bgbc2n

1.1665e12

NMOS 'B' for tunneling current model.

bgbc2p

7.4567e11

PMOS 'B' for tunneling current model.

vtm00

0.026

Thermal voltage at 25 degC.

nodechk

1

NODE checking flag.

noff2

1.0

C-V turn-on/off parameter /* v4.6.

lnoff2

0.0

Length dependence of noff2 /* v4.6.

wnoff2

0.0

Width dependence of noff2 /* v4.6.

pnoff2

0.0

Cross-term dependence of noff2 /* v4.6.

lvbsa

0.0

Length dependence of vbsa.

lvsce

0.0

Length dependence of vsce.

lcdsbs

0.0

Length dependence of cdsbs.

lnofffd

0.0

Length dependence of nofffd.

lvofffd

0.0

Length dependence of vofffd.

lk1b

0.0

Length dependence of k1b.

lk2b

0.0

Length dependence of k2b.

ldk2b

0.0

Length dependence of dk2b.

ldvbd0

0.0

Length dependence of dvbd0.

ldvbd1

0.0

Length dependence of dvbd1.

lmoinfd

0.0

Length dependence of moinfd.

lvbs0pd

0.0

Length dependence of vbs0pd.

lvbs0fd

0.0

Length dependence of vbs0fd.

wvbsa

0.0

Width dependence of vbsa.

wvsce

0.0

Width dependence of vsce.

wcdsbs

0.0

Width dependence of cdsbs.

wnofffd

0.0

Width dependence of nofffd.

wvofffd

0.0

Width dependence of vofffd.

wk1b

0.0

Width dependence of k1b.

wk2b

0.0

Width dependence of k2b.

wdk2b

0.0

Width dependence of dk2b.

wdvbd0

0.0

Width dependence of dvbd0.

wdvbd1

0.0

Width dependence of dvbd1.

wmoinfd

0.0

Width dependence of moinfd.

wvbs0pd

0.0

Width dependence of vbs0pd.

wvbs0fd

0.0

Width dependence of vbs0fd.

pvbsa

0.0

Cross-term dependence of vbsa.

pvsce

0.0

Cross-term dependence of vsce.

pcdsbs

0.0

Cross-term dependence of cdsbs.

pnofffd

0.0

Cross-term dependence of nofffd.

pvofffd

0.0

Cross-term dependence of vofffd.

pk1b

0.0

Cross-term dependence of k1b.

pk2b

0.0

Cross-term dependence of k2b.

pdk2b

0.0

Cross-term dependence of dk2b.

pdvbd0

0.0

Cross-term dependence of dvbd0.

pdvbd1

0.0

Cross-term dependence of dvbd1.

pmoinfd

0.0

Cross-term dependence of moinfd.

pvbs0pd

0.0

Cross-term dependence of vbs0pd.

pvbs0fd

0.0

Cross-term dependence of vbs0fd.

vgs_max

infinity

Maximum allowed voltage across gate and source.

vgd_max

infinity

Maximum allowed voltage across gate and drain.

vds_max

infinity

Maximum allowed voltage across drain and source.

vpd_max

infinity

Maximum allowed voltage across external body and drain.

vps_max

vpd_max

Maximum allowed voltage across external body and source.

vgp_max

vgs_max

Maximum allowed voltage across gate and external body.

vge_max

infinity

Maximum allowed voltage across gate and substrate.

ved_max

infinity

Maximum allowed voltage across substrate and drain.

ves_max

infinity

Maximum allowed voltage across substrate and source.

vpe_max

infinity

Maximum allowed voltage across external body and substrate.

vgb_max

vgs_max

Maximum allowed voltage across gate and body.

vbs_max

vbd_max

Maximum allowed voltage across body and source.

vbd_max

infinity

Maximum allowed voltage across body and drain.

vbe_max

infinity

Maximum allowed voltage across body and substrate.

vgsr_max

vgd_max

Maximum allowed reverse voltage across gate and source.

vgdr_max

vgd_max

Maximum allowed reverse voltage across gate and drain.

vgpr_max

vgp_max

Maximum allowed reverse voltage across gate and external body.

vpsr_max

vps_max

Maximum allowed reverse voltage across external body and source.

vpdr_max

vpd_max

Maximum allowed reverse voltage across external body and drain.

vger_max

infinity

Maximum allowed reverse voltage across gate and substrate.

vedr_max

infinity

Maximum allowed reverse voltage across substrate and drain.

vesr_max

infinity

Maximum allowed reverse voltage across substrate and source.

vper_max

infinity

Maximum allowed reverse voltage across external body and substrate.

vgbr_max

vgb_max

Maximum allowed reverse voltage across gate and body.

vbsr_max

vbs_max

Maximum allowed reverse voltage across body and source.

vbdr_max

vbd_max

Maximum allowed reverse voltage across body and drain.

vber_max

infinity

Maximum allowed reverse voltage across body and substrate.

Auto Model Selection

Many models need to be characterized for different geometries in order to obtain accurate results for model development. The model selector program automatically searches for a model with the length and width range specified in the instance statement and uses this model in the simulations.

For the auto model selector program to find a specific model, the models to be searched should be grouped together within braces. Such a group is called a model group. An opening brace is required at the end of the line defining each model group. Every model in the group is given a name followed by a colon and the list of parameters. Also, the four geometric parameters lmax, lmin, wmax, and wmin should be given. The selection criteria to choose a model is as follows:

lmin <= inst_length < lmax  and   wmin <= inst_width  < wmax

Example:

model ModelName ModelType {

1: <model parameters> lmin=2 lmax=4 wmin=1 wmax=2

2: <model parameters> lmin=1 lmax=2 wmin=2 wmax=4

3: <model parameters> lmin=2 lmax=4 wmin=4 wmax=6

}

Then, for a given instance

M1 1 2 3 4 ModelName w=3 l=1.5 

the program would search all the models in the model group with the name ModelName and then pick the first model whose geometric range satisfies the selection criteria. In the preceding example, the auto model selector program would choose ModelName.2.

You must specify both length (l) and width (w) on the device instance line to enable automatic model selection.

Output Parameters

tempeff

(C)

Effective temperature for a single device.

meff

Effective multiplicity factor (m-factor).

weff

(m)

Effective channel width(alias=lx62).

leff

(m)

Effective channel length(alias=lx63).

lpoly

(m)

Effective poly length.

leffcv

(m)

Effective channel length for CV(alias=lx65).

weffcv

(m)

Effective channel width for CV(alias=lx64).

rtheff

()

Effective thermal resistance.

ctheff

(F)

Effective thermal capacitance.

rseff

()

Effective source resistance.

rdeff

()

Effective drain resistance.

phi

(V)

Surface potential (phi alias=lv50).

tox

(m)

Oxide thickness (tox alias=lv51).

gseff

(S)

Effective source parasitic conductance(alias=lv16).

gdeff

(S)

Effective drain parasitic conductance(alias=lv17).

rds

()

Drain resistance (squares) (alias=lv13).

rss

()

Source resistance (squares)(alias=lv14).

Note:
  1. The output of charge “qb”, “qd”, and “qs” are the sum of intrinsic charge and junction charge. The output of capacitors “cdd”, “cdb”, “csb”, “cbd”, “cbb”, and “cbs” are the sum of intrinsic capacitors and junction capacitors.
  2. “reversed” means that vds is negative for NMOS or non-negative for PMOS devices. It is not the same with SPICE3.

Related Topics

BSIMSOI MOSFET Model (bsimsoi)

Device Structure

Equivalent Circuit

Device Regions

Global Control Options

Model Equations

Model Version Updates

Model Usage


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